公开(公告)号：US20020046985A1

公开(公告)日：2002-04-25

申请号：US09835115

申请日：2001-04-13

Inventor： Michael J. Daneman ,  Chuang-Chia Lin ,  Boris Kobrin

IPC: B81C001/00

CPC classification number: G02B6/3518 ,  B81B3/0054 ,  B81B2203/033 ,  B81C1/00166 ,  B81C2201/014 ,  G02B6/122 ,  G02B6/32 ,  G02B6/3514 ,  G02B6/3548 ,  G02B6/357 ,  G02B6/358 ,  G02B6/3584 ,  G02B26/0833 ,  G02B2006/12104

Abstract: A microelectromechanical (MEMS) apparatus has a base and a flap with a portion coupled to the base may be fabricated by an inventive process. The process generally involves etching one or more trenches in a backside of a base, e.g., by anisotropic etch. The trench may be etched such that an orientation of a sidewall is defined by a crystal orientation of the base material. A layer of insulating material is formed on one or more sidewalls of one or more of the trenches. A conductive layer is formed on the layer of insulating material on one or more sidewalls of one or more of the trenches. The conductive layer may completely fill up the trench between the insulating materials on the sidewalls to provide the isolated electrode. Base material is removed from a portion of the base bordered by the one or more trenches to form a cavity in the base. The trench etch may stop on an etch-stop layer so that the cavity does not form all the way through the base.

Abstract translation: 微机电（MEMS）设备具有基座，并且具有与基座耦合的部分的翼片可以通过本发明的方法制造。 该方法通常涉及在基底的背面蚀刻一个或多个沟槽，例如通过各向异性蚀刻。 可以蚀刻沟槽，使得侧壁的取向由基材的晶体取向限定。 在一个或多个沟槽的一个或多个侧壁上形成一层绝缘材料。 在一个或多个沟槽的一个或多个侧壁上的绝缘材料层上形成导电层。 导电层可以完全填满侧壁上的绝缘材料之间的沟槽，以提供隔离的电极。 基底材料从由一个或多个沟槽邻接的基底的一部分移除，以在基底中形成空腔。 沟槽蚀刻可以在蚀刻停止层上停止，使得空腔不会一直穿过基底。

公开(公告)号：US06250165B1

公开(公告)日：2001-06-26

申请号：US09239781

申请日：1999-01-29

Applicant: Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

Inventor： Minekazu Sakai ,  Inao Toyoda ,  Minoru Murata

IPC: G01L900

CPC classification number: B81C1/00158 ,  B81C2201/014 ,  G01L9/0042 ,  G01P15/0802 ,  G01P2015/0814

Abstract: A semiconductor physical quantity sensor has a P-type semiconductor substrate and an N-type semiconductor layer formed on a main surface of the P-type semiconductor substrate. A displaceable portion is formed by electrochemically etching the P-type semiconductor substrate from a side of the main surface. At that time, a buried insulation film formed to penetrate the N-type semiconductor layer and to extend into the P-type semiconductor substrate is used as a stopper for the etching. Accordingly, an etched region can be restricted by the buried insulation film, so that the displaceable portion can be precisely formed.

Abstract translation: 半导体物理量传感器具有P型半导体衬底和形成在P型半导体衬底的主表面上的N型半导体层。 通过从主表面的一侧电化学蚀刻P型半导体衬底形成位移部分。 此时，形成为穿透N型半导体层并延伸到P型半导体衬底中的掩埋绝缘膜用作蚀刻的阻挡层。 因此，可以通过埋入绝缘膜来限制蚀刻区域，从而能够精确地形成位移部。

公开(公告)号：US6140709A

公开(公告)日：2000-10-31

申请号：US306181

申请日：1999-05-06

Applicant: Horst Muenzel ,  Michael Offenberg ,  Udo Bischof ,  Eckhard Graf ,  Markus Lutz

Inventor： Horst Muenzel ,  Michael Offenberg ,  Udo Bischof ,  Eckhard Graf ,  Markus Lutz

IPC: H01L23/12 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  G01P15/08 ,  H01L21/60 ,  H01L23/48 ,  H01L29/40 ,  H01L25/52

CPC classification number: G01P15/0802 ,  B81C1/00301 ,  B81C1/00801 ,  G01C19/56 ,  H01L24/02 ,  B81B2207/07 ,  B81B2207/097 ,  B81C2201/014 ,  B81C2201/053 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074

Abstract: A bonding pad structure, in particular for a micromechanical sensor, includes a substrate, an electrically insulating sacrificial layer provided on the substrate, a patterned conductor path layer buried in the sacrificial layer, a contact hole provided in the sacrificial layer, and a bonding pad base, composed of an electrically conductive material. The bonding pad base has a first region extending over the sacrificial layer, and a second layer in contact with the conductor path region and extending through the contact hole. A protective layer is provided at least temporarily on the sacrificial layer in a specific region beneath and around the bonding pad base to prevent underetching of the sacrificial layer beneath the bonding pad base during etching of the sacrificial layer in such a way that the substrate and/or the conductor path is exposed.

Abstract translation: 特别是用于微机械传感器的焊盘结构包括衬底，设置在衬底上的电绝缘牺牲层，埋在牺牲层中的图案化导体通路层，设置在牺牲层中的接触孔，以及焊盘 基底，由导电材料组成。 焊盘基部具有在牺牲层上延伸的第一区域，以及与导体路径区域接触并延伸穿过接触孔的第二层。 保护层至少临时地设置在接合焊盘基座的下面和周围的特定区域中的牺牲层上，以防止牺牲层在蚀刻牺牲层期间的牺牲层的去抛光，使得衬底和/ 或导体路径露出。

公开(公告)号：US6090638A

公开(公告)日：2000-07-18

申请号：US113979

申请日：1998-07-10

Applicant: Benedetto Vigna ,  Paolo Ferrari ,  Marco Ferrera ,  Pietro Montanini

Inventor： Benedetto Vigna ,  Paolo Ferrari ,  Marco Ferrera ,  Pietro Montanini

IPC: B81B3/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  H02L23/48

CPC classification number: H01L21/764 ,  B81C1/00246 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/76202 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0735 ,  G01P2015/0814

Abstract: A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.

Abstract translation: 使用具有高密度钨芯的悬置结构形成具有高灵敏度的传感器。 为了制造它，将氧化硅牺牲层，多晶硅层，钨层和碳化硅层相继沉积在单晶硅体上。 通过选择性地去除碳化硅，钨和多晶硅层来限定悬浮结构。 然后形成覆盖钨层的未覆盖端的碳化硅间隔物，然后除去牺牲层。

公开(公告)号：US5789264A

公开(公告)日：1998-08-04

申请号：US716761

申请日：1996-09-23

Applicant: Jae-Hyuk Chung

Inventor： Jae-Hyuk Chung

IPC: B81B3/00 ,  G02B5/08 ,  G02B26/08 ,  G03B21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/316 ,  H01L41/09 ,  H01L21/265

CPC classification number: B81C1/00214 ,  B81B3/0083 ,  G02B26/0858 ,  B81B2201/042 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/016

Abstract: An inventive method for the manufacture of an array of thin film actuated mirrors includes the steps of: providing an active matrix; forming a plurality of insulating layers having a planarized top surface on top of the active matrix; forming a thin film sacrificial layer having an array of empty cavities on the planarized top surface of the plurality of insulating layers; forming an array of actuating structures on top of the thin film sacrificial layer including the empty cavities, each of the actuating structures including a first thin film electrode, a thin film electrodisplacive member, a second thin film electrode, an elastic member and a conduit; and removing the thin film sacrificial layer, thereby forming the array of thin film actuated mirrors. Since the thin film layers constituting each of the actuating structures are formed on the planarized top surface of the insulating layers, the thin film layers constituting each of the actuating structures are flat, allowing the first thin film electrode placed on top thereof, which also acts as a mirror, to have a flat top surface, thereby increasing the overall optical efficiency and performance of the array.

Abstract translation: 用于制造薄膜致动反射镜阵列的创新方法包括以下步骤：提供有源矩阵; 在所述有源矩阵的顶部上形成具有平坦化顶表面的多个绝缘层; 在所述多个绝缘层的平坦化顶表面上形成具有空腔阵列的薄膜牺牲层; 在包括空腔的薄膜牺牲层的顶部上形成致动结构的阵列，每个致动结构包括第一薄膜电极，薄膜电致位移元件，第二薄膜电极，弹性元件和导管; 并去除薄膜牺牲层，从而形成薄膜致动反射镜阵列。 由于构成每个致动结构的薄膜层形成在绝缘层的平坦化顶表面上，所以构成每个致动结构的薄膜层是平坦的，允许第一薄膜电极放置在顶部，其也起作用 作为镜子，具有平坦的顶表面，从而增加阵列的整体光学效率和性能。

公开(公告)号：US12077429B2

公开(公告)日：2024-09-03

申请号：US17421330

申请日：2020-02-27

Applicant: Robert Bosch GmbH

Inventor： Lars Tebje ,  Jochen Reinmuth ,  Johannes Classen

IPC: B81B7/02 ,  B81C1/00 ,  G01C19/5783 ,  G01L7/08 ,  G01L19/00 ,  G01P15/08 ,  G01P15/125

CPC classification number: B81B7/02 ,  B81C1/00341 ,  G01C19/5783 ,  G01L7/082 ,  G01L19/0092 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C2201/0105 ,  B81C2201/014

Abstract: A micromechanical sensor device and a corresponding production method. The micromechanical sensor device has a substrate which has a front side and a rear side. Formed on the front side, at a lateral distance, are an inertial sensor region having an inertial structure for acquiring external accelerations and/or rotations, and a pressure sensor region having a diaphragm region for acquiring an external pressure. A micromechanical function layer by which the diaphragm region is formed in the pressure sensor region. A micromechanical function layer is applied on the micromechanical function layer, the inertial structure being formed out of the second and third micromechanical function layer. A cap device encloses a first predefined reference pressure in a first cavity in the inertial sensor region, and a second cavity is formed underneath the diaphragm region.

公开(公告)号：US12006209B2

公开(公告)日：2024-06-11

申请号：US16980792

申请日：2019-03-14

Applicant: Obsidian Sensors, Inc.

Inventor： John Hong ,  Tallis Chang ,  Edward Chan ,  Bing Wen ,  Yaoling Pan ,  Sean Andrews

IPC: B81B3/00 ,  B81C1/00 ,  G01J5/20

CPC classification number: B81C1/00595 ,  B81B3/0081 ,  B81C1/0069 ,  G01J5/20 ,  B81B2201/0207 ,  B81B2203/019 ,  B81C2201/0105 ,  B81C2201/014

Abstract: A method of manufacturing an electromechanical systems structure includes manufacturing sub-micron structural features. In some embodiments, the structural features are less than the lithographic limit of a lithography process.

公开(公告)号：US11965787B2

公开(公告)日：2024-04-23

申请号：US17860941

申请日：2022-07-08

Applicant: NextInput, Inc.

Inventor： Julius Minglin Tsai ,  Ryan Diestelhorst ,  Dan Benjamin

IPC: G01L1/00 ,  B81B3/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/26

CPC classification number: G01L1/18 ,  B81B3/0021 ,  B81C1/00595 ,  G01L1/26 ,  B81B2203/0127 ,  B81C2201/014

Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

公开(公告)号：US11958740B2

公开(公告)日：2024-04-16

申请号：US17276450

申请日：2019-10-30

Applicant: Robert Bosch GmbH

Inventor： Achim Kronenberger

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00801 ,  B81B7/0025 ,  B81B2203/0109 ,  B81C2201/014 ,  B81C2203/0109

Abstract: A method for producing a microelectromechanical sensor. The microelectromechanical sensor is produced by connecting a cap wafer to a sensor wafer. The cap wafer has a bonding structure for connecting the cap wafer to the sensor wafer. The sensor wafer has a sensor core having a movable structure. The cap wafer has a stop structure for limiting an excursion of the movable structure. The method includes a first step and a second step following the first step, the stop surface of the stop structure being situated at the level of the original surface of the unprocessed cap wafer.

公开(公告)号：US11890643B2

公开(公告)日：2024-02-06

申请号：US16993274

申请日：2020-08-14

Applicant: Vanguard International Semiconductor Corporation

Inventor： You Qian ,  Joan Josep Giner de Haro ,  Rakesh Kumar ,  Jia Jie Xia

IPC: B06B1/06 ,  B81B3/00 ,  B81C1/00

CPC classification number: B06B1/0666 ,  B81B3/0021 ,  B81C1/00158 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/014 ,  B81C2201/0133

Abstract: A PMUT includes a substrate, a stopper, and a multi-layered structure, where the substrate includes a corner, and a cavity is disposed in the substrate. The stopper is in contact with the corner of the substrate and the cavity. The multi-layered structure is disposed over the cavity and attached to the stopper and the multi-layered structure includes at least one through hole in contact with the cavity.