公开(公告)号：US20060191627A1

公开(公告)日：2006-08-31

申请号：US11372542

申请日：2006-03-10

Applicant: Bernard Aspar ,  Chrystelle Lagache

Inventor： Bernard Aspar ,  Chrystelle Lagache

IPC: B32B38/10 ,  B32B37/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material (10) comprising the following stages: (a) the formation in the block of a buried zone (12), embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part (14) of the block, (b) the formation at the level of the embrittled zone of at least one separation initiator (30, 36) by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and (c) the separation at the level of the embrittled zone of the superficial part (14) of the block from a remaining part (16), called the mass part, from the separation initiator (30, 36) by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. Application for the manufacture of components for micro-electronics, opto-electronics or micro-mechanics.

Abstract translation: 一种用于切割材料块（10）的方法，包括以下阶段：（a）通过至少一个离子引入阶段脆化的埋入区（12）的块中的形成，所述掩埋区限定至少一个 块的表面部分（14），（b）通过使用从插入工具中选择的第一分离装置在至少一个分离引发剂（30,36）的脆化区的层面上形成， 流体的注入，离子性质的热处理和/或离子注入不同于在前一阶段引入的离子性离子，和（c）在所述表面部分（14）的脆化区域的水平分离 通过使用不同于第一分离装置的第二装置从选自热处理和/或应用程序的第二装置从分离引发剂（30,36）的剩余部分（16）中除去称为质量部分的块 的机械力作用在表面之间 部分和脆弱的区域。 用于制造微电子，光电子或微机械元件的应用。

公开(公告)号：US07029548B2

公开(公告)日：2006-04-18

申请号：US10312864

申请日：2001-07-11

Applicant: Bernard Aspar ,  Chrystelle Lagache

Inventor： Bernard Aspar ,  Chrystelle Lagache

IPC: B32B35/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material includes a step of introducing ions in the block thereby forming an embrittled zone and defining at least one superficial part of the block. The method also includes a step of forming at least one separation initiator at the level of the embrittled zone, wherein the step of forming the separation initiator includes implanting ions of an ionic nature different from that introduced during the preceding step. The method further includes a step of separating at the level of the embrittled zone the superficial part of the block from a remaining part of the block from the separation initiator, wherein the separation step includes at least one of a thermal treatment and the application of mechanical forces acting between the superficial part and the embrittled zone.

Abstract translation: 用于切割材料块的方法包括在块中引入离子的步骤，从而形成脆化区并限定块的至少一个表面部分。 该方法还包括在脆化区的水平上形成至少一种分离引发剂的步骤，其中形成分离引发剂的步骤包括注入离子性质的离子，其与前述步骤中引入的离子性质不同。 该方法还包括在脆化区的水平上将块的表面部分与块的剩余部分从分离引发剂分离的步骤，其中分离步骤包括热处理和应用机械中的至少一种 在表面部分和脆弱区域之间作用的力。

公开(公告)号：US20060048885A1

公开(公告)日：2006-03-09

申请号：US10533296

申请日：2003-11-04

Applicant: Olivier Constantin ,  Frederique Mittler ,  Philippe Combette

Inventor： Olivier Constantin ,  Frederique Mittler ,  Philippe Combette

IPC: B44C1/165 ,  B32B37/00 ,  B32B38/10

CPC classification number: B29C65/526 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00833 ,  B01J2219/0086 ,  B01L3/502707 ,  B01L2200/0689 ,  B01L2200/12 ,  B01L2300/044 ,  B01L2300/0819 ,  B29C35/00 ,  B29C66/0242 ,  B29C66/112 ,  B29C66/1122 ,  B29C66/131 ,  B29C66/5346 ,  B29C66/54 ,  B29C66/71 ,  B29L2031/756 ,  B32B37/1284 ,  B81B2201/0214 ,  B81B2201/058 ,  B81C1/00119 ,  B81C1/00357 ,  B81C3/008 ,  B81C2201/019 ,  B81C2201/0191 ,  B29K2083/00

Abstract: The method for production of a component with a micro-joint comprises a first step of deposition of a layer of polymer designed to constitute an assembly joint on a transfer substrate, a second step of bringing the polymer layer into contact with a micro-structured substrate and a third step of removing the transfer substrate. Due to the difference of the chemical affinity between the polymer layer and the transfer substrate on the one hand and the chemical affinity between the polymer layer and the micro-structured substrate on the other hand, the zones of the polymer layer, which are in contact with the micro-structured substrate during the second step, remain on the micro-structured substrate after the third step. These zones constitute the assembly joint.

Abstract translation: 用于生产具有微接头的部件的方法包括：第一步骤，沉积设置成在转印基板上构成组装接头的聚合物层;第二步骤，使聚合物层与微结构基材接触 以及去除转印衬底的第三步骤。 由于聚合物层和转印基板之间的化学亲和力的差异以及聚合物层和微结构基板之间的化学亲和力，所以聚合物层的接触区域 在第二步骤中，微结构的衬底在第三步之后保留在微结构衬底上。 这些区域构成组装接头。

公开(公告)号：US06946314B2

公开(公告)日：2005-09-20

申请号：US10642315

申请日：2003-08-15

Applicant: William D. Sawyer ,  Jeffrey T. Borenstein

Inventor： William D. Sawyer ,  Jeffrey T. Borenstein

IPC: B81C1/00 ,  B81C3/00 ,  H01L20060101 ,  H01L21/00 ,  H01L29/06 ,  H01L21/76

CPC classification number: B81C1/00182 ,  B81C1/00579 ,  B81C3/001 ,  B81C2201/0191

Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.

Abstract translation: 本发明提供了使用绝缘体上硅（SOI）晶片生产微电子机械系统（MEMS）和相关器件的一般制造方法。 该方法包括提供SOI晶片，其具有（i）手柄层，（ii）电介质层和（iii）器件层，其中在SOI晶片的器件层上进行台面蚀刻，提供衬底 其中图案已被蚀刻到衬底上，将SOI晶片和衬底接合在一起，去除SOI晶片的手柄层，去除SOI晶片的电介质层，然后对SOI的器件层进行结构蚀刻 晶圆来定义设备。

公开(公告)号：US20050186758A1

公开(公告)日：2005-08-25

申请号：US10644644

申请日：2003-08-19

Applicant: Francois Henley ,  Nathan Cheung

Inventor： Francois Henley ,  Nathan Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20050124159A1

公开(公告)日：2005-06-09

申请号：US10504714

申请日：2003-02-14

Applicant: Edvard Kalvesten ,  Thorbjorn Ebefors ,  Niklas Svedin ,  Hakan Westin

Inventor： Edvard Kalvesten ,  Thorbjorn Ebefors ,  Niklas Svedin ,  Hakan Westin

IPC: B81B3/00 ,  B81B7/04 ,  G02F1/29 ,  H01L21/00 ,  H01L21/30 ,  H01L21/302 ,  H01L21/46 ,  H01L21/461

CPC classification number: B81C1/0015 ,  B81B2201/042 ,  B81C1/00142 ,  B81C3/002 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/058

Abstract: A method of making a deflectable, free hanging micro structure having at least one hinge member, the method includes the steps of providing a first sacrificial wafer having a single crystalline material constituting material forming the micro structure. A second semiconductor wafer including necessary components for forming the structure in cooperation with the first wafer is provided. Finite areas of a structured bonding material is provided, on one or both of the wafers at selected locations, the finite areas defining points of connection for joining the wafers. The wafers are bonded using heat and optionally pressure. Sacrificial material is etched away from the sacrificial wafer, patterning the top wafer by lithography is performed to define the desired deflectable microstructures having hinges, and subsequently silicon etch to make the structures.

Abstract translation: 一种制造具有至少一个铰链构件的可偏转的自由悬挂微结构的方法，所述方法包括以下步骤：提供具有形成微结构的单晶材料构成材料的第一牺牲晶片。 提供了包括与第一晶片协作形成结构的必要部件的第二半导体晶片。 在选定位置的一个或两个晶片上提供结构化接合材料的有限区域，限定用于接合晶片的连接点。 使用热和任选的压力将晶片接合。 牺牲材料被蚀刻离开牺牲晶片，通过光刻来图案化顶部晶片以限定具有铰链的期望的可偏转微结构，并随后进行硅蚀刻以制造结构。

公开(公告)号：US20040217388A1

公开(公告)日：2004-11-04

申请号：US10853848

申请日：2004-05-25

Applicant: HRL LABORATORIES, LLC

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H01L027/148

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A MEM tunneling gyroscope assembly includes (1) a beam structure, and a mating structure defined on a first substrate or wafer; and (2) at least one contact structure, and a mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer; and (3) a bonding layer is disposed on at least one of said mating structures for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate or wafer.

Abstract translation: MEM隧道陀螺仪组件包括（1）梁结构和限定在第一衬底或晶片上的配合结构; 以及（2）至少一个接触结构以及限定在第二衬底或晶片上的配合结构，所述第二衬底或晶片上的所述配合结构与所述第一衬底或晶片上的配合结构互补形状; 和（3）粘合层设置在至少一个所述配合结构上，用于将限定在第一衬底或晶片上的配合结构接合到第二衬底或晶片上的配合结构。

公开(公告)号：US06777312B2

公开(公告)日：2004-08-17

申请号：US10005765

申请日：2001-11-02

Applicant: Eui-Hyeok Yang ,  Dean V. Wiberg

Inventor： Eui-Hyeok Yang ,  Dean V. Wiberg

IPC: H01L2130

CPC classification number: B81C3/001 ,  B81B2201/042 ,  B81B2203/0127 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038 ,  H01L21/2007 ,  H01L21/76251

Abstract: Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices.

Abstract translation: 将膜从一个晶片转移到另一个晶片以形成集成的半导体器件的技术。

公开(公告)号：US06673694B2

公开(公告)日：2004-01-06

申请号：US10038890

申请日：2002-01-02

Applicant: Jeffrey T. Borenstein

Inventor： Jeffrey T. Borenstein

IPC: H01L2176

CPC classification number: B81C1/00119 ,  B81B2201/0235 ,  B81C1/00357 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/019 ,  B81C2201/0191

Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI). One first obtains an SOI wafer that has (i) a handle layer, (ii) a a dielectric layer, and (iii) a device layer. A mesa etch has been made on the device layer of the SOI wafer and a structural etch has been made on the dielectric layer of the SOI wafer. One then obtains a substrate (such as glass or silicon), where a pattern has been etched onto the substrate. The SOI wafer and the substrate are bonded together. Then the handle layer of the SOI wafer is removed, followed by the dielectric layer of the SOI wafer.

Abstract translation: 本发明提供了使用绝缘体上硅（SOI）制造微电子机械系统（MEMS）和相关器件的一般制造方法。 首先获得具有（i）手柄层，（ii）介电层和（iii）器件层）的SOI晶片。 已经在SOI晶片的器件层上进行了台面蚀刻，并且在SOI晶片的电介质层上进行了结构蚀刻。 然后，获得衬底（例如玻璃或硅），其中已将图案蚀刻到衬底上。 SOI晶片和衬底结合在一起。 然后去除SOI晶片的手柄层，随后是SOI晶片的电介质层。

公开(公告)号：US20030138555A1

公开(公告)日：2003-07-24

申请号：US10356047

申请日：2003-01-31

Applicant: 3M Innovative Properties Company

Inventor： Mark K. Debe ,  Martin B. Wolk

IPC: B41M003/12

CPC classification number: B41M5/38207 ,  B41M5/385 ,  B41M5/42 ,  B81C1/00031 ,  B81C2201/0191 ,  H01J7/24 ,  H01L21/4803 ,  H01L21/4846 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2221/68368 ,  H05K3/046 ,  Y10S977/701 ,  Y10S977/833 ,  Y10S977/89

Abstract: Articles having a component with a surface defining microstructured features can be formed using thermal transfer elements. One example of a suitable thermal transfer element includes a microstructured layer having a surface defining microstructured features imposed on the microstructured layer. The thermal transfer element is configured and arranged for the transfer of at least a portion of the microstructured layer to a receptor while substantially preserving the microstructured features of that portion.

Abstract translation: 可以使用热转印元件形成具有限定微结构特征的表面的部件的制品。 合适的热转印元件的一个实例包括具有限定微结构化层上的微结构特征的表面的微结构化层。 热传递元件被配置和布置成用于将微结构化层的至少一部分转移到受体，同时基本上保留该部分的微结构化特征。