公开(公告)号：US10445269B2

公开(公告)日：2019-10-15

申请号：US16175645

申请日：2018-10-30

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F13/36 ,  G06F13/362 ,  H01L23/48 ,  H01L23/60 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/50 ,  H01L23/00 ,  G06F13/40 ,  G11C11/4096 ,  G11C14/00 ,  G11C16/10 ,  G11C16/26 ,  H01L27/02

Abstract: This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.

公开(公告)号：US20190114271A1

公开(公告)日：2019-04-18

申请号：US16164242

申请日：2018-10-18

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ian Shaeffer

IPC: G06F13/16 ,  G11C11/4093 ,  G11C11/409 ,  G11C11/4076 ,  G06F3/06

Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

公开(公告)号：US20190073328A1

公开(公告)日：2019-03-07

申请号：US16175645

申请日：2018-10-30

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F13/362 ,  G11C11/408 ,  G11C11/409 ,  G11C11/4096 ,  G11C14/00 ,  G11C16/10 ,  G11C16/26 ,  H01L27/02 ,  H01L23/48 ,  H01L23/50 ,  H01L23/60 ,  H01L23/00 ,  H01L25/065 ,  G06F13/40

CPC classification number: G06F13/362 ,  G06F13/4068 ,  G11C11/408 ,  G11C11/409 ,  G11C11/4096 ,  G11C14/0018 ,  G11C16/10 ,  G11C16/26 ,  H01L23/48 ,  H01L23/481 ,  H01L23/50 ,  H01L23/60 ,  H01L24/09 ,  H01L25/0652 ,  H01L25/0657 ,  H01L27/0248 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/08145 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2225/06503 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/1436 ,  H01L2924/15311

Abstract: This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.

公开(公告)号：US20190051345A1

公开(公告)日：2019-02-14

申请号：US16106355

申请日：2018-08-21

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G11C11/4076 ,  G11C7/22 ,  G06F13/16 ,  G11C7/04

CPC classification number: G11C11/4076 ,  G06F13/1689 ,  G11C7/04 ,  G11C7/222

Abstract: A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal.

公开(公告)号：US10192610B2

公开(公告)日：2019-01-29

申请号：US15667706

申请日：2017-08-03

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Richard E. Warmke ,  David B. Roberts ,  Frank Lambrecht

IPC: G11C11/4076 ,  G06F1/10 ,  G11C7/10 ,  G11C7/22 ,  H03L7/07 ,  H03L7/081 ,  H04L7/033 ,  G11C11/4091 ,  G11C7/04

Abstract: A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals.

公开(公告)号：US10157660B2

公开(公告)日：2018-12-18

申请号：US15809925

申请日：2017-11-10

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ming Li

IPC: G11C5/02 ,  G11C11/4093 ,  G11C11/406 ,  G11C5/04 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H01L23/48 ,  H01L23/00

Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

公开(公告)号：US20180166121A1

公开(公告)日：2018-06-14

申请号：US15809925

申请日：2017-11-10

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ming Li

IPC: G11C11/4093 ,  G11C5/02 ,  G11C5/04 ,  G11C11/4096 ,  H01L23/48 ,  H01L25/18 ,  H01L25/065 ,  H01L25/10 ,  H01L23/00

CPC classification number: G11C11/4093 ,  G11C5/02 ,  G11C5/025 ,  G11C5/04 ,  G11C11/4096 ,  H01L23/481 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06558 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01055 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

公开(公告)号：US20180158491A1

公开(公告)日：2018-06-07

申请号：US15841049

申请日：2017-12-13

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  John W. Poulton

IPC: G11C5/14 ,  G06F11/07

CPC classification number: G11C5/144 ,  G06F11/0727 ,  G06F11/076 ,  G06F11/0793 ,  G06F13/4072 ,  G11C5/145 ,  H04L1/203 ,  H04L25/0264 ,  H04L25/08

Abstract: In a data transmission system, one or more signal supply voltages for generating the signaling voltage of a signal to be transmitted are generated in a first circuit and forwarded from the first circuit to a second circuit. The second circuit may use the forwarded signal supply voltages to generate another signal to be transmitted back from the second circuit to the first circuit, thereby obviating the need to generate signal supply voltages separately in the second circuit. The first circuit may also adjust the signal supply voltages based on the signal transmitted back from the second circuit to the first circuit. The data transmission system may employ a single-ended signaling system in which the signaling voltage is referenced to a reference voltage that is a power supply voltage such as ground, shared by the first circuit and the second circuit.

公开(公告)号：US09792965B2

公开(公告)日：2017-10-17

申请号：US14737147

申请日：2015-06-11

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Frederick A. Ware ,  William N. Ng

IPC: G11C7/10 ,  G11C5/04

CPC classification number: G11C7/1093 ,  G11C5/04 ,  G11C7/1003 ,  G11C7/1066

Abstract: A memory module can be programmed to deliver relatively wide, low-latency data in a first access mode, or to sacrifice some latency in return for a narrower data width, a narrower command width, or both, in a second access mode. The narrow, higher-latency mode requires fewer connections and traces. A controller can therefore support more modules, and thus increased system capacity. Programmable modules thus allow computer manufacturers to strike a desired balance between memory latency, capacity, and cost.

公开(公告)号：US20170154665A1

公开(公告)日：2017-06-01

申请号：US15259854

申请日：2016-09-08

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Richard E. Warmke ,  David B. Roberts ,  Frank Lambrecht

IPC: G11C11/4076 ,  G11C11/4091

CPC classification number: G11C11/4076 ,  G06F1/10 ,  G11C7/04 ,  G11C7/10 ,  G11C7/1087 ,  G11C7/222 ,  G11C11/4091 ,  G11C2207/107 ,  H03L7/07 ,  H03L7/0814 ,  H04L7/0337

Abstract: A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals.