公开(公告)号：US07541201B2

公开(公告)日：2009-06-02

申请号：US11227764

申请日：2005-09-14

Applicant: Mark Ghinovker

Inventor： Mark Ghinovker

IPC: G01R31/26 ,  H01L21/66

CPC classification number: G01B11/272 ,  G01N21/4785 ,  G01N21/9501 ,  G03F7/70633 ,  H01L21/68 ,  H01L21/682 ,  H01L23/544 ,  Y10S438/975

Abstract: Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed.

Abstract translation: 公开了具有灵活对称特性的覆盖目标和用于测量这些目标的两个或更多个连续层之间的重叠误差的测量技术。 在一个实施例中，目标包括用于测量x和y方向上的重叠误差（或移位）的结构，其中x结构具有与y结构不同的对称中心（COS）。 在另一个实施例中，x和y结构之一是不变的，具有180°旋转，并且x和y结构中的另一个具有镜像对称性。 在一个方面，x和y结构一起是180°旋转的变体。 在又一示例中，用于测量x和/或y方向上的覆盖层的目标包括具有180对称性的第一层上的结构，并且在具有镜像对称性的第二层上的结构。 在另一个实施例中，用于确定x和/或y方向上的覆盖的目标包括第一层上的结构和第二层上的结构，其中第一层上的结构具有由COS的已知量偏移的COS 的第二层结构。 在具体实现中，所公开的目标实施例中的任何一个可以采取设备结构的形式。 在用例中，使用在第一和第二层中的每一个中具有固有的180°旋转对称性或镜像对称性的装置结构来测量第一层和第二层中的覆盖层。 公开了用于对具有灵活对称特性的目标成像和分析获取的图像以确定覆盖或对准误差的技术。

公开(公告)号：US07538333B1

公开(公告)日：2009-05-26

申请号：US11460517

申请日：2006-07-27

Applicant: Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

Inventor： Amin Samsavar ,  John M. Schmidt ,  Rainer Schierle ,  Gregory S. Horner ,  Thomas G. Miller ,  Zhiwei Xu ,  Xiaofeng Hu ,  Jianou Shi ,  Sergio Edelstein

IPC: H01J37/30 ,  H01J37/317 ,  G01R31/26

CPC classification number: G01R31/303 ,  G01R31/2831 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.

Abstract translation: 提供了用于确定样品性质的系统和方法。 样品可以是产品晶片。 该方法可以包括将聚焦斑点偏置在样本上。 该方法还可以包括测量样品上的测量点的参数。 测量点可能与聚焦点重叠。 此外，该方法可以包括根据测量的参数确定样品的性质。 还提供了用于改变电晕源的性能的系统和方法。 该方法可以包括改变电晕源内的环境的属性。 该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

公开(公告)号：US07528944B2

公开(公告)日：2009-05-05

申请号：US11751970

申请日：2007-05-22

Applicant: David Chen ,  Andrew Steinbach ,  Daniel Kavaldjiev ,  Alexander Belyaev ,  Juergen Reich

Inventor： David Chen ,  Andrew Steinbach ,  Daniel Kavaldjiev ,  Alexander Belyaev ,  Juergen Reich

IPC: G01N21/00

CPC classification number: G01N21/894 ,  G01N21/47 ,  G01N21/55 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/4735 ,  G01N2021/8822 ,  G03F7/7065

Abstract: Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool are provided. One method for detecting pinholes in a film formed on a wafer includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. This method also includes detecting the pinholes in the film formed on the wafer using the second output. One method for monitoring a thermal process tool includes generating output responsive to light from a wafer using an inspection system. The output includes the first and second output described above. The wafer was processed by the thermal process tool prior to generating the output. The method also includes monitoring the thermal process tool using the second output.

Abstract translation: 提供了用于检测在晶片上形成的膜中的针孔或用于监测热处理工具的方法和系统。 用于检测形成在晶片上的膜中的针孔的一种方法包括使用检查系统响应于来自晶片的光而产生输出。 输出包括对应于晶片上的缺陷的第一输出和不对应于缺陷的第二输出。 该方法还包括使用第二输出来检测在晶片上形成的膜中的针孔。 用于监测热处理工具的一种方法包括响应来自使用检查系统的晶片的光产生输出。 输出包括上述第一和第二输出。 在生成输出之前，通过热处理工具处理晶片。 该方法还包括使用第二输出来监测热处理工具。

公开(公告)号：US07514681B1

公开(公告)日：2009-04-07

申请号：US11451698

申请日：2006-06-13

Applicant: Paul F. Marella ,  Mark A. McCord ,  Marian Mankos ,  David L. Adler

Inventor： Paul F. Marella ,  Mark A. McCord ,  Marian Mankos ,  David L. Adler

IPC: H01L21/02 ,  H01J37/145 ,  G21K7/00

CPC classification number: H01J37/244 ,  H01J37/05 ,  H01J37/292 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: One embodiment relates to a method of inspecting a substrate using electrons. Mirror-mode electron-beam imaging is performed on a region of the substrate at multiple voltage differences between an electron source and a substrate, and image data is stored corresponding to the multiple voltage differences. A calculation is made of a measure of variation of an imaged aspect of a feature in the region with respect to the voltage difference between the electron source and the substrate. Other embodiments and features are also disclosed.

Abstract translation: 一个实施例涉及使用电子检查衬底的方法。 在电子源和衬底之间的多个电压差的基板的区域上执行镜像电子束成像，并且对应于多个电压差存储图像数据。 计算相对于电子源和基板之间的电压差的该区域中特征的成像方面的变化的度量。 还公开了其它实施例和特征。

公开(公告)号：US07511830B2

公开(公告)日：2009-03-31

申请号：US11945949

申请日：2007-11-27

Applicant: Anatloy Fabrikant ,  Guoheng Zhao ,  Daniel C. Wack ,  Mehrdad Nikoonahad

Inventor： Anatloy Fabrikant ,  Guoheng Zhao ,  Daniel C. Wack ,  Mehrdad Nikoonahad

IPC: G01B11/24 ,  G01B11/14

CPC classification number: G01N21/45 ,  G01N21/21 ,  G01N21/4788 ,  G01N21/9501 ,  G01N2021/213 ,  G01N2021/217 ,  G01N2021/8416 ,  G02B5/18

Abstract: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab. A three-dimensional solution can then be constructed from the two-dimensional solutions for the slabs to yield the diffraction efficiencies of the three-dimensional grating. This model can then be used for finding the one or more parameters of the diffracting structure in scatterometry. Line roughness of a surface can be measured by directing a polarized incident beam in an incident plane normal to the line grating and measuring the cross-polarization coefficient. The value of the one or more parameters may then be supplied to a stepper or etcher to adjust a lithographic or etching process.

Abstract translation: 不需要构建一个完整的多维查找表作为模型来查找散点图中的关键维度或其他参数，而是从参数的“最佳猜测”值开始采用回归或其他优化的估计方法。 预先计算的模型的特征值可以稍后存储并重用于具有某些共同特征的其他结构以节省时间。 用于查找一个或多个参数的值的散点数据可以限于那些对底层薄膜特性较不敏感的波长数据。 三维光栅的模型可以通过将代表性结构切片成一叠平板并且产生矩形块阵列来近似每个平板来构造。 可以为每个块解决一维边界问题，然后将其匹配以找到板的二维解。 然后可以从板的二维解决方案中构建三维解，以产生三维光栅的衍射效率。 然后，该模型可用于在散射测量中找到衍射结构的一个或多个参数。 可以通过将垂直于线光栅的入射平面中的偏振入射光束引导并测量交叉极化系数来测量表面的线粗糙度。 然后可以将一个或多个参数的值提供给步进器或蚀刻器以调整光刻或蚀刻工艺。

公开(公告)号：US20090067114A1

公开(公告)日：2009-03-12

申请号：US11865203

申请日：2007-10-01

Applicant: Aviv Balan

Inventor： Aviv Balan

IPC: H01L21/683

CPC classification number: H01L21/6838 ,  Y10T279/11

Abstract: A chuck for releasably retaining a substrate, where the chuck has a body with a substrate receiving surface disposed in an X-Y coordinate plane and adapted to receive the substrate. The body has gas pressure delivery channels and gas vacuum drawing channels, where the gas pressure delivery channels and gas vacuum drawing channels are mutually exclusive within the body. The substrate receiving surface has gas pressure delivery portions in communication with the gas pressure delivery channels, for delivering a gas pressure against the substrate while the substrate is retained by the chuck, and thereby keeping the substrate from contacting the substrate receiving surface. The substrate receiving surface also has gas vacuum drawing portions in communication with the gas vacuum drawing channels, for drawing a gas vacuum against the substrate while the substrate is retained by the chuck, and thereby retaining the substrate proximate the substrate receiving surface. Retaining means retain the substrate in X-Y directions from sliding off of the substrate receiving surface.

Abstract translation: 一种用于可释放地保持基板的卡盘，其中卡盘具有设置在X-Y坐标平面中并适于接收基板的基板接收表面的主体。 身体具有气体压力输送通道和气体真空吸气通道，其中气体压力输送通道和气体真空拉伸通道在体内相互排斥。 基板接收表面具有与气体压力输送通道连通的气体压力输送部分，用于在基板被卡盘保持的同时将气体压力传递到基板，从而保持基板不与基板接收表面接触。 衬底接收表面还具有与气体真空抽吸通道连通的气体真空抽吸部分，用于在衬底被卡盘保持的同时将气体真空吸附在衬底上，从而将衬底保持靠近衬底接收表面。 保持装置在基板接收表面滑动时将基板保持在X-Y方向上。

公开(公告)号：US07493590B1

公开(公告)日：2009-02-17

申请号：US11549943

申请日：2006-10-16

Applicant: Carl Hess ,  Ruifang Shi ,  Gaurav Verma

Inventor： Carl Hess ,  Ruifang Shi ,  Gaurav Verma

IPC: G06F17/50 ,  G06F19/00 ,  G06F17/17 ,  G03F1/00 ,  G21K5/00

CPC classification number: G03F1/36

Abstract: Optical proximity correction methods and apparatus are disclosed. A simulated geometry representing one or more printed features from a reticle is generated using an optical proximity correction (OPC) model that takes into account a reticle design and one or more parameters from a process window of a stepper. An error function is formed that measures a deviation between the simulated geometry and a desired design of the one or more printed features. The error function takes into account parameters (p0 . . . pJ) from across the process window in addition to, or in lieu of, a best focus and a best exposure for the stepper. The reticle design is adjusted in a way that reduces the deviation as measured by the error function, thereby producing an adjusted reticle design.

Abstract translation: 公开了光学邻近校正方法和装置。 使用光学邻近校正（OPC）模型来生成表示来自光罩的一个或多个印刷特征的模拟几何，其考虑到来自步进机的过程窗口的掩模版设计和一个或多个参数。 形成误差函数，其测量模拟几何与所述一个或多个印刷特征的期望设计之间的偏差。 除了代替步进器的最佳焦点和最佳曝光之外，误差函数还考虑了过程窗口中的参数（p0。。pJ）。 以通过误差函数测量的方式减小偏差的方法调整掩模版设计，从而产生调整的掩模版设计。

公开(公告)号：US20090009754A1

公开(公告)日：2009-01-08

申请号：US12097172

申请日：2006-12-14

Applicant: Kurt L. Haller ,  David Shortt ,  Christian Wolters

Inventor： Kurt L. Haller ,  David Shortt ,  Christian Wolters

IPC: G01N21/88

CPC classification number: G01N21/9501

Abstract: One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

Abstract translation: 一个系统包括检查子系统，该检查子系统被配置为将光引导到晶片上的一个点上，并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统，该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体，从而增加了系统的灵敏度。 另外，该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

公开(公告)号：US07449673B2

公开(公告)日：2008-11-11

申请号：US11712182

申请日：2007-02-27

Applicant: Yung-Ho Chuang ,  J. Joseph Armstrong

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong

IPC: G01J1/04 ,  H01J3/14

CPC classification number: G03F7/70583 ,  G02B27/106 ,  G02B27/144 ,  G02B27/145 ,  G02B27/48 ,  H01S3/005 ,  H01S3/225 ,  Y10S372/70

Abstract: A system and method for reducing peak power of a laser pulse and reducing speckle contrast of a single pulse comprises a plurality of elements oriented to split and delay a pulse or pulses transmitted from a light emitting device. The design provides the ability to divide the pulse into multiple pulses by delaying the components relative to one another. Reduction of speckle contrast entails using the same or similar components to the power reduction design, reoriented to orient received energy wherein angles between the optical paths are altered such that the split or divided light energy components strike the target at different angles or different positions. An alternate embodiment for reducing speckle contrast is disclosed wherein a single pulse is passed in an angular orientation through a grating to create a delayed portion of the pulse relative to the leading edge of the pulse.

Abstract translation: 用于减少激光脉冲的峰值功率并减少单个脉冲的斑点对比度的系统和方法包括多个元件，其定向为分离和延迟从发光器件传输的脉冲或脉冲。 该设计提供了通过相对于彼此延迟部件将脉冲分成多个脉冲的能力。 斑点对比度的减少需要使用与功率降低设计相同或相似的组件，重新定向以定向接收的能量，其中改变光路之间的角度，使得分裂或分开的光能分量以不同的角度或不同的位置撞击目标。 公开了一种用于减少散斑对比度的替代实施例，其中单个脉冲以角度方向通过光栅以产生相对于脉冲的前沿的脉冲的延迟部分。

公开(公告)号：US07440105B2

公开(公告)日：2008-10-21

申请号：US11060588

申请日：2005-02-16

Applicant: Michael E. Adel ,  Joel L. Seligson ,  Daniel Kandel

Inventor： Michael E. Adel ,  Joel L. Seligson ,  Daniel Kandel

IPC: G01B11/00 ,  H01L21/76 ,  H01L23/544

CPC classification number: G03F7/70683 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/70633 ,  H01L22/12

Abstract: The present invention relates to overlay marks and methods for determining overlay error. One aspect of the present invention relates to a continuously varying offset mark. The continuously varying offset mark is a single mark that includes over laid periodic structures, which have offsets that vary as a function of position. By way of example, the periodic structures may correspond to gratings with different values of a grating characteristic such as pitch. Another aspect of the present invention relates to methods for determining overlay error from the continuously varying offset mark. The method generally includes determining the center of symmetry of the continuously varying offset mark and comparing it to the geometric center of the mark. If there is zero overlay, the center of symmetry tends to coincide with the geometric center of the mark. If overlay is non zero (e.g., misalignment between two layers), the center of symmetry is displaced from the geometric center of the mark. The displacement in conjunction with the preset gain of the continuously varying offset mark is used to calculate the overlay error.

Abstract translation: 本发明涉及覆盖标记和确定覆盖误差的方法。 本发明的一个方面涉及连续变化的偏移标记。 连续变化的偏移标记是包括过度周期性结构的单个标记，其具有作为位置的函数而变化的偏移。 作为示例，周期性结构可以对应于具有诸如间距的光栅特性的不同值的光栅。 本发明的另一方面涉及用于从连续变化的偏移标记确定覆盖误差的方法。 该方法通常包括确定连续变化的偏移标记的对称中心并将其与标记的几何中心进行比较。 如果有零覆盖，则对称中心倾向于与标记的几何中心重合。 如果覆盖层不为零（例如，两层之间的未对准），则对称中心从标记的几何中心位移。 使用与连续变化的偏移标记的预设增益相结合的位移来计算重叠误差。