公开(公告)号：US20180308663A1

公开(公告)日：2018-10-25

申请号：US15960372

申请日：2018-04-23

Applicant: Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32137 ,  C23C16/45536 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support, each filament including a conductor surrounded by a cylindrical insulating shell, and an RF power source configured to apply a first RF signal to at least some of the plurality of filaments, to apply a second RF signal of equal frequency to at least some of the plurality of filaments, and to modulate a phase offset between the first RF signal and the second RF signal.

公开(公告)号：US09355819B2

公开(公告)日：2016-05-31

申请号：US14460683

申请日：2014-08-15

Applicant: John C. Forster ,  Joseph Yudovsky ,  Garry K. Kwong ,  Tai T. Ngo ,  Kevin Griffin ,  Kenneth S. Collins ,  Ren Liu

Inventor： John C. Forster ,  Joseph Yudovsky ,  Garry K. Kwong ,  Tai T. Ngo ,  Kevin Griffin ,  Kenneth S. Collins ,  Ren Liu

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract translation: 描述了与处理室一起使用的模块化等离子体源组件。 该组件包括具有端电介质的RF热电极和邻近电极侧面定位的滑动接地连接。 密封箔将滑动接地连接到壳体，以提供通过端部电介质与热电极分离的接地滑动接地连接。 同轴馈电线通过导管进入与处理环境隔离的RF热电极，使得同轴RF馈电线处于大气压力，同时等离子体处理区域处于减压状态。

公开(公告)号：US20130206594A1

公开(公告)日：2013-08-15

申请号：US13783776

申请日：2013-03-04

Applicant: Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

Inventor： Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32935

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract translation: 等离子体蚀刻速率分布的偏斜校正是通过倾斜顶置RF源功率施加器围绕倾斜轴进行的，该倾斜轴的角度由处理数据中的偏斜确定。 完整的自由度通过结合三个轴向运动伺服机构来提供，该伺服机构支撑顶板RF源功率施加器悬挂在其上的浮动板。

公开(公告)号：US20130098882A1

公开(公告)日：2013-04-25

申请号：US13595292

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: B23K15/00

CPC classification number: H01J37/3233 ,  G21K5/00 ,  H05H1/46 ,  H05H7/001

Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.

Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。

公开(公告)号：US20130098873A1

公开(公告)日：2013-04-25

申请号：US13595655

申请日：2012-08-27

Applicant: Kartik Ramaswamy ,  Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf

Inventor： Kartik Ramaswamy ,  Kallol Bera ,  Kenneth S. Collins ,  Shahid Rauf

IPC: H01L21/3065 ,  C23F1/08

CPC classification number: H01J37/32091 ,  H01J37/32541

Abstract: A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.

Abstract translation: 等离子体反应器具有用于在位于顶棚顶板和工件支撑表面之间的加工区域内加工工件的主室，所述反应器具有塔顶电子束源，其产生通过主体的天花板流入处理区域的电子束 房间。

公开(公告)号：US20130098552A1

公开(公告)日：2013-04-25

申请号：US13595252

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: C23F1/08

CPC classification number: H01J37/3233 ,  H01J2237/06366

Abstract: A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity.

Abstract translation: 依靠电子束作为等离子体源的等离子体反应器采用电子束源中的形状电子束提取栅格来改善均匀性。

公开(公告)号：US20120199071A1

公开(公告)日：2012-08-09

申请号：US13446732

申请日：2012-04-13

Applicant: KENNETH S. COLLINS ,  Andrew N. Nguyen ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Douglas A. Buchberger, JR. ,  Daniel J. Hoffman ,  Amir Al-Bayati

Inventor： KENNETH S. COLLINS ,  Andrew N. Nguyen ,  Kartik Ramaswamy ,  Hiroji Hanawa ,  Douglas A. Buchberger, JR. ,  Daniel J. Hoffman ,  Amir Al-Bayati

IPC: C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32458 ,  H01J37/32412 ,  H01J37/32477

Abstract: Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.

Abstract translation: 本文所述的实施例涉及使用鲁棒部件的等离子体室和处理系统。 在一个实施例中，提供了一个室。 所述腔室包括具有内部体积的本体，设置在所述内部体积中与衬底支撑件相对的气体分配组件，所述气体分配组件具有设置在其上的冷却剂通道，以及联接到所述主体的第一中空导管和第二中空导管， 与内部容积流体连通。

公开(公告)号：US20120034469A1

公开(公告)日：2012-02-09

申请号：US13199521

申请日：2011-08-31

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC: B32B17/06 ,  B32B19/00 ,  C04B35/622 ,  B32B15/04 ,  C04B35/48 ,  C04B35/482

CPC classification number: C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

Abstract: A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract translation: 用于半导体加工的陶瓷制品，其耐受含卤素等离子体的侵蚀。 陶瓷制品由氧化钇和氧化锆的组合形成。 在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆， 。 在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇 。

公开(公告)号：US20120034136A1

公开(公告)日：2012-02-09

申请号：US13050481

申请日：2011-03-17

Applicant: Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

Inventor： Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

IPC: B01J19/08

CPC classification number: H01J37/32091 ,  H01J37/32577 ,  H05H1/46 ,  H05H2001/4622

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract translation: 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

公开(公告)号：US20110097901A1

公开(公告)日：2011-04-28

申请号：US12821636

申请日：2010-06-23

Applicant: SAMER BANNA ,  VALENTIN N. TODOROW ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  ZHIGANG CHEN ,  ANKUR AGARWAL ,  ANNIRUDDHA PAL ,  TSE-CHIANG WANG ,  SHAHID RAUF

Inventor： SAMER BANNA ,  VALENTIN N. TODOROW ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  MARTIN JEFF SALINAS ,  ZHIGANG CHEN ,  ANKUR AGARWAL ,  ANNIRUDDHA PAL ,  TSE-CHIANG WANG ,  SHAHID RAUF

IPC: H01L21/465 ,  H01L21/46

CPC classification number: H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

Abstract: Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils.

Abstract translation: 本文提供了双模电感耦合等离子体反应器的实施例及其使用方法。 在一些实施例中，双模感应耦合等离子体处理系统可以包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。 等离子体源组件包括多个线圈，其被配置为将RF能量感应耦合到处理室中以在其中形成和维持等离子体;相位控制器，用于调节施加到多个线圈中的每个线圈的RF电流的相对相位;以及 耦合到所述相位控制器和所述多个线圈的RF发生器。