公开(公告)号：US20060024976A1

公开(公告)日：2006-02-02

申请号：US11146742

申请日：2005-06-07

申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/31 ,  H01L21/26

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/31695 ,  H01L21/76825 ,  H01L2221/1047

摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

公开(公告)号：US06630406B2

公开(公告)日：2003-10-07

申请号：US09855177

申请日：2001-05-14

申请人： Carlo Waldfried ,  Ivan Berry ,  Orlando Escorcia ,  Qingyuan Han ,  Palani Sakthivel

发明人： Carlo Waldfried ,  Ivan Berry ,  Orlando Escorcia ,  Qingyuan Han ,  Palani Sakthivel

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  H01J2237/3342 ,  H01L21/31138

摘要： An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.

公开(公告)号：US08338315B2

公开(公告)日：2012-12-25

申请号：US12037222

申请日：2008-02-26

申请人： Darren L. Moore ,  Carlo Waldfried ,  Ganesh Rajagopalan

发明人： Darren L. Moore ,  Carlo Waldfried ,  Ganesh Rajagopalan

IPC分类号： H01L21/00

CPC分类号： C08J3/24 ,  C08J2383/00 ,  H01L21/3105 ,  H01L21/76825

摘要： Processes for curing silicon based low k dielectric materials generally includes exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.

摘要翻译： 用于固化基于硅的低k介电材料的方法通常包括将硅基低k介电材料暴露于具有约10至约500ppm的氧化剂的惰性气氛中的紫外辐射，持续一段时间和强度对 固化基于硅的低k电介质材料，以便在紫外线照射之前相对于硅基低k电介质材料改变化学，物理，机械和电学特性及其组合中所选择的一种。 本文还公开了基本上不含亚氧化SiO种类的硅基低k电介质材料。

公开(公告)号：US07629272B2

公开(公告)日：2009-12-08

申请号：US11146742

申请日：2005-06-07

申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry, III

发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry, III

IPC分类号： H01L21/31

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/31695 ,  H01L21/76825 ,  H01L2221/1047

摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

摘要翻译： 从含有致孔剂材料的低k电介质膜形成多孔低k电介质材料的方法包括将低k电介质膜暴露于紫外线辐射。 在一个实施方案中，将薄膜暴露于小于240nm的宽带紫外线辐射一段时间和强度以有效去除致孔剂材料。 在其他实施例中，低k电介质膜暴露于有效地增加膜基质的交联密度的第一紫外线辐射图，同时在暴露于第一紫外线辐射图之前和之后保持致孔剂材料的浓度基本相同。 然后可以处理低k电介质膜以在其中形成金属互连结构，随后暴露于有效从低k电介质膜去除致孔剂材料并形成多孔低k电介质膜的第二紫外线图案。

公开(公告)号：US20060274405A1

公开(公告)日：2006-12-07

申请号：US11446052

申请日：2006-06-02

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Gerald Beyer ,  Francesca Iacopi

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Gerald Beyer ,  Francesca Iacopi

IPC分类号： F21V9/04

CPC分类号： H01L21/3122 ,  B05D3/067 ,  C08J3/28 ,  C09D183/04 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02145 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76825

摘要： Processes for forming a low k dielectric material onto a surface of a substrate comprises depositing the low k dielectric material onto the surface; and exposing the low k dielectric material to ultraviolet radiation for a period of time and intensity effective to increase a mechanical property of the low k dielectric material, wherein the mechanical property is significantly improved compared to a corresponding mechanical property of the low k dielectric material free from exposure to the ultraviolet radiation, or the corresponding mechanical property of the low k dielectric material that is furnace cured, or the corresponding mechanical property of the low k dielectric material that is exposed to excessive activating energy prior to ultraviolet radiation exposure, wherein excessive activating energy comprises an excessive hotplate bake sequence, a furnace cure, an annealing cure, a multi-temperature cure process or plasma treatment prior to the ultraviolet radiation.

摘要翻译： 在基板的表面上形成低k电介质材料的工艺包括将低k电介质材料沉积到表面上; 并且将低k电介质材料暴露于紫外线辐射一段时间和强度以有效地增加低k介电材料的机械性能，其中与低k电介质材料的相应机械性能相比，机械性能显着提高 或暴露于紫外线辐射下的低k电介质材料的相应机械性能，或在紫外线曝光之前暴露于过度活化能的低k电介质材料的相应机械性能，其中过度激活 能量包括过量的热板烘烤顺序，炉固化，退火固化，多温固化过程或在紫外线辐射之前的等离子体处理。

公开(公告)号：US20060141806A1

公开(公告)日：2006-06-29

申请号：US11155525

申请日：2005-06-17

申请人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

发明人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L21/26

CPC分类号： H01L21/02348 ,  H01L21/02334 ,  H01L21/312 ,  H01L21/324 ,  Y10S134/902

摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。

公开(公告)号：US06913796B2

公开(公告)日：2005-07-05

申请号：US09952649

申请日：2001-09-14

申请人： Ralph Albano ,  Cory Bargeron ,  Ivan L. Berry, III ,  Jeff Bremmer ,  Phil Dembowski ,  Orlando Escorcia ,  Qingyuan Han ,  Nick Sbrockey ,  Carlo Waldfried

发明人： Ralph Albano ,  Cory Bargeron ,  Ivan L. Berry, III ,  Jeff Bremmer ,  Phil Dembowski ,  Orlando Escorcia ,  Qingyuan Han ,  Nick Sbrockey ,  Carlo Waldfried

IPC分类号： C08J9/36 ,  C01B33/12 ,  C23C16/56 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H05H1/24 ,  B05D3/06 ,  C08F2/52 ,  C08J7/18

CPC分类号： C01B33/126 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0234 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/249953 ,  Y10T428/31663

摘要： Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material. The post-plasma treated, plasma cured porous dielectric material has a dielectric constant between about 1.1 and about 3.5 and an improved elastic modulus and hardness.

摘要翻译： 低介电常数多孔材料具有改善的弹性模量和硬度。 制造这种多孔材料的过程涉及提供多孔介电材料和等离子体固化多孔介电材料以产生等离子体固化的多孔电介质材料。 多孔介电材料的等离子体固化产生具有改善的模量和硬度的材料。 弹性模量的改善通常大于或约50％，更典型地大于或约100％，更典型地大于或约200％。 硬度的改善通常大于或约50％。 等离子体固化的多孔电介质材料可以任选地进行后等离子体处理。 与等离子体固化的多孔介电材料相比，等离子体固化的多孔介电材料的后等离子体处理降低了材料的介电常数，同时保持了改进的弹性模量和硬度。 后等离子体处理的等离子体固化的多孔介电材料的介电常数在约1.1和约3.5之间，并且具有改善的弹性模量和硬度。

公开(公告)号：US06834656B2

公开(公告)日：2004-12-28

申请号：US09864003

申请日：2001-05-23

申请人： Han Qingyuan ,  Carlo Waldfried ,  Orlando Escorcia ,  Gary Dahrooge ,  Ivan Berry

发明人： Han Qingyuan ,  Carlo Waldfried ,  Orlando Escorcia ,  Gary Dahrooge ,  Ivan Berry

IPC分类号： B08B704

CPC分类号： H01L21/02063 ,  B08B7/0035 ,  C03C15/00 ,  C03C23/0075 ,  C23G5/00 ,  G03F7/427 ,  H01L21/02071 ,  H01L21/31138

摘要： A process for removing polymers formed during etching and etch residues from a semiconductor substrate by exposing the substrate to plasmas of neutral chemistry. The plasma generates atomic hydrogen species and atomic oxygen species in about equal amounts that react with and remove the polymers and etch residues from the substrate. The process is especially suitable for use with semiconductor substrates comprising low k dielectric materials and/or copper interconnects.

摘要翻译： 一种用于去除在蚀刻期间形成的聚合物的方法，并通过将衬底暴露于中性化学的等离子体来蚀刻残留物从半导体衬底。 等离子体产生大约相等量的原子氢物质和原子氧物质，其与聚合物反应并除去基底上的残留物。 该方法特别适用于包含低k电介质材料和/或铜互连的半导体衬底。

公开(公告)号：US06184523B2

公开(公告)日：2001-02-06

申请号：US09114999

申请日：1998-07-14

申请人： Peter A. Dowben ,  Carlo Waldfried ,  Tara J. McAvoy ,  David N. McIlroy

发明人： Peter A. Dowben ,  Carlo Waldfried ,  Tara J. McAvoy ,  David N. McIlroy

IPC分类号： H01J4948

CPC分类号： H01J49/482

摘要： Disclosed is a compact, small diameter, high resolution charged particle-energy detecting, retractable cylindrical mirror analyzer system. Multiple sequential stages enable charged particle-energy detection with an improved resolution as compared to that possible where only a single stage is utilized. The relatively small size allows for positioning, via a manipulator of the cylindrical mirror analyzer system, which is attached to a linear motion feedthrough mounted on a conflat flange of a vacuum system.

摘要翻译： 公开了一种紧凑，小直径，高分辨率带电粒子能量检测，可伸缩圆柱镜分析仪系统。 与仅使用单个级的可能性相比，多个顺序阶段使得带电粒子能量检测具有改进的分辨率。 相对小的尺寸允许通过柱面镜分析仪系统的操纵器来定位，其连接到安装在真空系统的混合法兰上的直线运动馈通。

公开(公告)号：US20110136346A1

公开(公告)日：2011-06-09

申请号：US12631117

申请日：2009-12-04

申请人： Phillip Geissbühler ,  Ivan Berry ,  Armin Huseinovic ,  Shijian Luo ,  Aseem Kumar Srivastava ,  Carlo Waldfried

发明人： Phillip Geissbühler ,  Ivan Berry ,  Armin Huseinovic ,  Shijian Luo ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC分类号： H01L21/3065 ,  G03F7/42 ,  B08B7/00

CPC分类号： H01L21/67069 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32844 ,  H01J37/32935 ,  H01L21/31138 ,  Y02C20/30 ,  Y02P70/605

摘要： Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.

摘要翻译： 用于处理半导体工件的非氧化等离子体处理装置通常包括基本上非氧化气体源; 与非氧化性气体源流体连通的等离子体产生部件; 与等离子体产生部件流体连通的处理室和位于处理室的底壁中心的排气导管。 在一个实施例中，处理室由含有少于0.15重量％铜的铝合金形成; 在其它实施方案中，处理室包括不含铜的材料的涂层，以防止在基本上非氧化等离子体的处理期间形成氢化铜。 在其它实施例中，处理室壁构造成在等离子体处理期间被加热。 还公开了非氧化等离子体工艺。