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公开(公告)号：US06544126B2
公开(公告)日：2003-04-08
申请号：US09841173
申请日：2001-04-25
申请人： Takao Sawano , Tomohiro Kawase
发明人： Takao Sawano , Tomohiro Kawase
IPC分类号： A63F922
CPC分类号： A63F13/95 , A63F13/12 , A63F13/22 , A63F13/28 , A63F13/92 , A63F2300/403 , A63F2300/408
摘要： A portable handheld game machine includes a capability to download and execute code from a source such as another game machine. The portable game machine enters a download mode in which it is receptive to receipt of executable code downloaded from the source. The portable game machine stores the executable code in an internal random access memory, and executes the code out of the memory. Successive downloads can be used to download an application that is larger than the internal memory capacity of the portable game machine. The source may issue a reset command to cause the portable game machine to re-enter the download mode to receive an next successive block of code. This allows multiplayer capabilities to be achieved without requiring a separate memory cartridge to be installed in each of the portable game machines.
摘要翻译： 便携式手持游戏机包括从诸如另一游戏机的源下载和执行代码的能力。 便携式游戏机进入下载模式，在该模式下，它接收从源头下载的可执行代码。 便携式游戏机将可执行代码存储在内部随机存取存储器中，并将代码从存储器中执行。 连续下载可用于下载比便携式游戏机的内部存储容量大的应用程序。 源可以发出复位命令以使便携式游戏机重新进入下载模式以接收下一个连续的代码块。 这允许在不需要在每个便携式游戏机中安装单独的存储盒的情况下实现多人游戏功能。
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公开(公告)号：US06485563B2
公开(公告)日：2002-11-26
申请号：US09765557
申请日：2001-01-19
申请人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
发明人： Tomohiro Kawase , Shinichi Sawada , Masami Tatsumi
IPC分类号： C30B900
摘要： A method of preparing a compound semiconductor crystal is able to dope the crystal with carbon with high reproducibility. The method includes the steps of sealing a carbon oxide gas of a predetermined partial pressure and a compound semiconductor material in a gas-impermeable airtight vessel, increasing the temperature of the vessel to melt the compound semiconductor material sealed in the vessel, and then decreasing the temperature of the vessel to solidify the melted compound semiconductor material to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×1015cm−3 to 20×1015cm−3 is prepared with high reproducibility.
摘要翻译： 制备化合物半导体晶体的方法能够以高重现性将碳掺杂。 该方法包括以下步骤：将不规则分压的氧化碳气体和化合物半导体材料密封在不透气体的气密容器中，增加容器的温度以熔化密封在容器中的化合物半导体材料，然后将 使熔融的化合物半导体材料固化，生长含有规定量的碳的化合物半导体晶体。 通过该方法，以高的再现性制备碳浓度为0.1×10 15 cm -3〜20×10 15 cm -3的化合物半导体晶体。
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13.发明授权
公开(公告)号：US5830269A
公开(公告)日：1998-11-03
申请号：US653466
申请日：1996-05-24
CPC分类号： C30B29/48 , C30B11/002 , C30B29/40
摘要： A method is provided for industrially preparing a group II-VI or III-V compound single crystal from a polycrystalline group II-VI or III-V starting compound, such that the resultant single crystal has a small number of crystal defects by effectively preventing polycrystallization. The method includes steps of coating an inner surface of a crucible with a film consisting of powdered solids and a vitreous substance, placing the polycrystalline compound in the coated crucible, placing the crucible in a furnace, heating the crucible with furnace for melting the polycrystalline compound in the crucible, and cooling the crucible and the melted compound for growing a single-crystalline compound. Additionally, the surface of a seed crystal and a gap between the seed crystal and a wall of the crucible may also be coated with a film of powdered solids and a vitreous substance.
摘要翻译： 提供了从多晶II-VI族或III-V族起始化合物工业制备II-VI族或III-V族化合物单晶的方法，使得所得单晶通过有效防止多结晶而具有少量晶体缺陷 。 该方法包括以下步骤：用由粉末状固体和玻璃状物质组成的薄膜涂覆坩埚的内表面，将多晶化合物放置在涂覆的坩埚中，将坩埚放入炉中，用坩埚加热熔化多晶化合物 在坩埚中，并冷却坩埚和用于生长单晶化合物的熔融化合物。 此外，晶种的表面和晶种与坩埚的壁之间的间隙也可以涂覆有粉末状固体和玻璃状物质的膜。
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14.发明授权Method and apparatus for producing semiconductor crystal, and semiconductor crystal 有权用于制造半导体晶体的方法和装置以及半导体晶体公开(公告)号：US09187843B2
公开(公告)日：2015-11-17
申请号：US13384922
申请日：2010-07-23
申请人： Takashi Sakurada , Tomohiro Kawase
发明人： Takashi Sakurada , Tomohiro Kawase
IPC分类号： C30B15/00 , C30B15/02 , C30B15/20 , C30B15/14 , C30B11/06 , C30B29/40 , C30B29/42 , C30B29/44
CPC分类号： C30B15/02 , C30B11/06 , C30B15/00 , C30B15/002 , C30B15/14 , C30B15/20 , C30B29/40 , C30B29/42 , C30B29/44 , Y10T117/1024
摘要： A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal (8) while dropping a produced melt into the impurity-containing melt, thereby producing a semiconductor crystal.
摘要翻译： 提供一种制造半导体晶体的方法。 该方法包括以下步骤：制备具有放置在底部的晶种和含杂质熔体的纵向容器，并且将悬置部分布置在上部并悬浮由具有杂质的半导体材料制成的滴下原料块 浓度低于含杂质熔体的杂质浓度，并且在纵向容器的长度方向上产生温度梯度，以熔化掉掉的原料块，并使与含有熔融物质的熔融物接触的一侧固化含杂质的熔体 晶种（8），同时将产生的熔体滴入含杂质的熔体中，从而制备半导体晶体。
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15.发明授权公开(公告)号：US08698282B2
公开(公告)日：2014-04-15
申请号：US12273101
申请日：2008-11-18
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/403
摘要： A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10−4 Ω·cm and not more than 0.1 Ω·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least −30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least −16% and not more than 16%.
摘要翻译： III族氮化物半导体晶体基板的直径为至少25mm且不大于160mm。 III族氮化物半导体晶体基板的电阻率至少为1×10-4＆OHgr·cm，不大于0.1＆OHgr·cm。 III族氮化物半导体晶体的直径方向的电阻率分布为-30％以上且30％以下。 III族氮化物半导体晶体的厚度方向的电阻率分布为〜16％以上且16％以下。
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16.发明授权公开(公告)号：US08310030B2
公开(公告)日：2012-11-13
申请号：US13178479
申请日：2011-07-07
申请人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
发明人： Ryu Hirota , Koji Uematsu , Tomohiro Kawase
CPC分类号： C30B29/403 , C30B9/00 , C30B19/00 , C30B33/10 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02625 , H01L21/02628 , H01L21/02639 , H01L33/0075 , H01L33/08 , H01L33/16 , H01L33/32
摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (it) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.
摘要翻译： 提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。 本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤 在<0001>方向上相对于矩阵（1s）反转; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（it）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。
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17.发明授权公开(公告)号：US08197583B2
公开(公告)日：2012-06-12
申请号：US13296173
申请日：2011-11-14
IPC分类号： C23C18/40
CPC分类号： C23C18/31 , C23C18/1607 , C23C18/30 , C23C18/34 , C23C18/40 , C23C18/405 , H05K3/422
摘要： Disclosed is an electroless plating solution exhibiting a good plating metal filling performance even for larger trenches or vias of several to one hundred and tens of μm, in a manner free from voids or seams, and allowing maintenance of stabilized performance for prolonged time. The electroless plating solution contains at least a water-soluble metal salt, a reducing agent for reducing metal ions derived from the water-soluble metal salt, and a chelating agent. In addition, the electroless plating solution contains a sulfur-based organic compound as a leveler having at least one aliphatic cyclic group or aromatic cyclic group to which may be linked at least one optional substituent. The aliphatic cyclic group or the aromatic cyclic group contains optional numbers of carbon atoms, oxygen atoms, phosphorus atoms, sulfur atoms and nitrogen atoms.
摘要翻译： 公开了一种化学镀溶液，即使对于较大的沟槽或几十微米的通孔也具有良好的电镀金属填充性能，没有空隙或接缝，并且能够延长稳定的性能。 化学镀溶液至少含有水溶性金属盐，还原剂，用于还原由水溶性金属盐衍生的金属离子和螯合剂。 此外，化学镀溶液含有作为具有至少一个脂肪族环状基团或芳香族环状基团的平整剂的硫系有机化合物，可以连接至少一个任选的取代基。 脂肪族环状基团或芳香族环状基团含有任意数量的碳原子，氧原子，磷原子，硫原子和氮原子。
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18.发明申请METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMICONDUCTOR CRYSTAL 有权用于生产半导体晶体的方法和装置，以及半导体晶体公开(公告)号：US20120112135A1
公开(公告)日：2012-05-10
申请号：US13384922
申请日：2010-07-23
申请人： Takashi Sakurada , Tomohiro Kawase
发明人： Takashi Sakurada , Tomohiro Kawase
CPC分类号： C30B15/02 , C30B11/06 , C30B15/00 , C30B15/002 , C30B15/14 , C30B15/20 , C30B29/40 , C30B29/42 , C30B29/44 , Y10T117/1024
摘要： A method of producing a semiconductor crystal is provided. The method includes the steps of preparing a longitudinal container with a seed crystal and an impurity-containing melt placed in a bottom section and with a suspension part arranged in an upper section and suspending a dropping raw material block made of a semiconductor material having an impurity concentration lower than the impurity concentration of the impurity-containing melt, and creating a temperature gradient in the longitudinal direction of the longitudinal container to melt the dropping raw material block, and solidifying the impurity-containing melt from the side that is in contact with the seed crystal (8) while dropping a produced melt into the impurity-containing melt, thereby producing a semiconductor crystal.
摘要翻译： 提供一种制造半导体晶体的方法。 该方法包括以下步骤：制备具有放置在底部的晶种和含杂质熔体的纵向容器，并且将悬置部分布置在上部并悬浮由具有杂质的半导体材料制成的滴下原料块 浓度低于含杂质熔体的杂质浓度，并且在纵向容器的长度方向上产生温度梯度，以熔化掉掉的原料块，并使与含有熔融物质的熔融物接触的一侧固化含杂质的熔体 晶种（8），同时将产生的熔体滴入含杂质的熔体中，从而制备半导体晶体。
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19.发明申请公开(公告)号：US20120058254A1
公开(公告)日：2012-03-08
申请号：US13296173
申请日：2011-11-14
CPC分类号： C23C18/31 , C23C18/1607 , C23C18/30 , C23C18/34 , C23C18/40 , C23C18/405 , H05K3/422
摘要： Disclosed is an electroless plating solution exhibiting a good plating metal filling performance even for larger trenches or vias of several to one hundred and tens of μm, in a manner free from voids or seams, and allowing maintenance of stabilized performance for prolonged time.The electroless plating solution contains at least a water-soluble metal salt, a reducing agent for reducing metal ions derived from the water-soluble metal salt, and a chelating agent. In addition, the electroless plating solution contains a sulfur-based organic compound as a leveler having at least one aliphatic cyclic group or aromatic cyclic group to which may be linked at least one optional substituent. The aliphatic cyclic group or the aromatic cyclic group contains optional numbers of carbon atoms, oxygen atoms, phosphorus atoms, sulfur atoms and nitrogen atoms.
摘要翻译： 公开了一种化学镀溶液，即使对于较大的沟槽或几十微米的通孔也具有良好的电镀金属填充性能，没有空隙或接缝，并且能够延长稳定的性能。 化学镀溶液至少含有水溶性金属盐，还原剂，用于还原由水溶性金属盐衍生的金属离子和螯合剂。 此外，化学镀溶液含有作为具有至少一个脂肪族环状基团或芳香族环状基团的平整剂的硫系有机化合物，可以连接至少一个任选的取代基。 脂肪族环状基团或芳香族环状基团含有任意数量的碳原子，氧原子，磷原子，硫原子和氮原子。
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公开(公告)号：US07892411B2
公开(公告)日：2011-02-22
申请号：US12187918
申请日：2008-08-07
摘要： Disclosed herein is an electrolytic copper plating process for electroplating copper on workpieces in a copper sulfate plating bath filled in a plating tank and containing an organic additive while using a soluble anode or insoluble anode as an anode and the workpieces as cathodes, including the steps of, setting a bath current density at not higher than 5 A/L, immersing metal copper in a region of the copper sulfate plating bath, the region being apart from a region between the anode and the cathode and also from regions adjacent the anode and cathode, respectively, such that a neighborhood of the thus-immersed metal copper can be used as an oxidative decomposition region, setting an immersed area of the metal copper at not smaller than 0.001 dm2/L based on the plating bath, and applying air bubbling to the oxidative decomposition region at not lower than 0.01 L/dm2·min based on the immersed area.
摘要翻译： 本发明公开了一种电解铜电镀工艺，该方法是在使用可溶性阳极或不溶性阳极作为阳极并将工件作为阴极的情况下，在填充于镀槽中的含硫酸铜电镀液中的铜上电镀铜并含有有机添加剂， 设定浴电流密度不高于5A / L，将金属铜浸入硫酸铜电镀槽区域，该区域与阳极和阴极之间的区域以及与阳极和阴极相邻的区域分开 ，使得这样浸入的金属铜的附近可以用作氧化分解区域，基于电镀槽将金属铜的浸渍面积设定为不小于0.001dm 2 / L，并将空气鼓泡 氧化分解区域根据浸渍面积不低于0.01 L / dm2·min。
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