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    LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    11.
    发明申请
    LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    横向连接场效应晶体管及其制造方法

    公开(公告)号：US20090315082A1

    公开(公告)日：2009-12-24

    申请号：US12552212

    申请日：2009-09-01

    申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

    发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

    IPC分类号： H01L29/808

    CPC分类号： H01L29/0634 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/808

    摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

    摘要翻译： 横向结型场效应晶体管包括布置在源极/漏极区之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质 以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及 具有与第一栅极电极层相同的电位。 因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

    Compound semiconductor device and method for fabricating compound semiconductor
    12.
    发明申请
    Compound semiconductor device and method for fabricating compound semiconductor 审中-公开

    公开(公告)号：US20090072243A1

    公开(公告)日：2009-03-19

    申请号：US11918733

    申请日：2006-04-05

    申请人： Jun Suda ,  Tsunenobu Kimoto

    发明人： Jun Suda ,  Tsunenobu Kimoto

    IPC分类号： H01L29/24 ,  H01L21/30

    CPC分类号： H01L21/26506 ,  G02F1/3551 ,  G02F1/3775 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02658 ,  H01L21/76254 ,  H01L21/8213 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/16 ,  H01S5/021 ,  H01S5/026 ,  H01S5/3202 ,  H01S5/32341

    摘要： In the present invention, a technology for causing arbitrary polarity, crystal face and crystal orientation to exist mixedly in a plane on the surface of a SiC substrate, and for forming a SiC layer or a group III-nitride or group II-oxide layer on the surface, is provided. A first SiC substrate 41 having (0001) face and a second SiC substrate 44 having (000-1) face are prepared. An oxide film 43 is formed on the surfaces of the SiC substrates 41 and 44 by subjecting them to an oxidation treatment, and then the two SiC substrates are fusion-bonded so that the rear surface of the second SiC substrate and the surface of the first SiC substrate are brought into contact with each other. Subsequently, a part corresponding to the second SiC substrate 44 is made thin (44a). Subsequently, a thin layer 44a of the second SiC substrate is removed in accordance with required periodic reversal to be processed in stripes by using a lithography technology and reactive ion etching technology. This enables a substrate to be produced, where the (0001) face and the (000-1) face of SiC appear alternately on the surface (a region denoted by reference numeral 441 and a region denoted by 44b/43a). On the substrate thus produced, an AlGaN layer 45a to be a first cladding layer, a GaN layer 46a to be an optical guide layer, and an AlGaN layer 45c to be a second cladding layer, are grown. The group III-nitrides grow while inheriting the face orientation of SiC exposed on the surface and thereby a structure where crystal axes are spatially-periodically reversed can be attained. In other words, a second laminated structure 45a/46b/47a is formed on the first laminated structure 43a/44b, and a third laminated structure 45b/46b/47b is formed on a region where the first laminated structure 43a/44b is not formed. Finally, a stripe structure for realizing light confinement in the lateral direction, i.e. the in-plane direction of the substrate, is formed by using a known processing technology including lithography and reactive ion etching, thus completing a non-linear optical element.

    Method of Sic Single Crystal Growth and Sic Single Crystal
    13.
    发明申请
    Method of Sic Single Crystal Growth and Sic Single Crystal 审中-公开
    Sic单晶生长和Sic单晶的方法

    公开(公告)号：US20070221119A1

    公开(公告)日：2007-09-27

    申请号：US11547692

    申请日：2005-05-13

    申请人： Tsunenobu Kimoto ,  Hiromu Shiomi ,  Hiroaki Saitoh

    发明人： Tsunenobu Kimoto ,  Hiromu Shiomi ,  Hiroaki Saitoh

    IPC分类号： C30B25/02

    CPC分类号： C23C16/325

    摘要： A method of epitaxial growth of a 4H—SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H—SiC single crystal on a 4H—SiC single crystal substrate by epitaxial growth while inclining an epitaxial growth plane of the substrate from a (0001) plane of the 4H—SiC single crystal by an off-angle of at least 12 degrees and less than 30 degrees in a axial direction, and a 4H—SiC single crystal obtained by the same.

    摘要翻译： 4H-SiC单晶的外延生长方法，其能够以实际生长速度生长具有低缺陷和低杂质的SiC单晶，其可以用于半导体材料，包括在4H上生长4H-SiC单晶 -SiC单晶衬底，通过外延生长，同时从4H-SiC单晶的（0001）面倾斜外延生长面至少12度且小于30度的偏离角， 20>轴向，以及由其获得的4H-SiC单晶。

    4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLYTYPE SUBSTRATE
    17.
    发明申请
    4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLYTYPE SUBSTRATE 审中-公开
    4H-多晶型氮化镓基半导体器件在4H-多晶基片上

    公开(公告)号：US20090261362A1

    公开(公告)日：2009-10-22

    申请号：US12496271

    申请日：2009-07-01

    申请人： Tetsuzo UEDA ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

    发明人： Tetsuzo UEDA ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

    IPC分类号： H01L33/00

    CPC分类号： H01L21/02082 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/18 ,  H01L33/32

    摘要： 4H—InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H—AlN or 4H—AlGaN on (11-20) a-face 4H—SiC substrates. Typically, non polar 4H—AlN is grown on 4H—SiC (11-20) by molecular beam epitaxy (MBE). Subsequently, III-V nitride device layers are grown by metal organic chemical vapor deposition (MOCVD) with 4H-polytype for all of the layers. The non-polar device does not contain any built-in electric field due to the spontaneous and piezoelectric polarization. The optoelectronic devices on the non-polar face exhibits higher emission efficiency with shorter emission wavelength because the electrons and holes are not spatially separated in the quantum well. Vertical device configuration for lasers and light emitting diodes (LEDs) using conductive 4H—AlGaN interlayer on conductive 4H—SiC substrates makes the chip size and series resistance smaller. The elimination of such electric field also improves the performance of high speed and high power transistors. The details of the epitaxial growth s and the processing procedures for the non-polar III-V nitride devices on the non-polar SiC substrates are also disclosed.

    摘要翻译： 在（11-20）a面4H-SiC衬底上的4H-AlN或4H-AlGaN上形成4H-InGaAlN合金基非极性面上的光电子和电子器件。 通常，非极性4H-AlN通过分子束外延（MBE）在4H-SiC（11-20）上生长。 随后，通过用于所有层的4H-多型金属有机化学气相沉积（MOCVD）生长III-V族氮化物器件层。 由于自发和压电极化，非极性器件不包含任何内置的电场。 由于电子和空穴在量子阱中没有空间分离，非极性面上的光电器件表现出较短的发射波长的发射效率。 在导电4H-SiC衬底上使用导电4H-AlGaN夹层的激光器和发光二极管（LED）的垂直器件配置使芯片尺寸和串联电阻更小。 这种电场的消除也提高了高速和高功率晶体管的性能。 还公开了非极性SiC衬底上的非极性III-V族氮化物器件的外延生长细节和处理步骤。

    Lateral Junction Field Effect Transistor and Method of Manufacturing The Same
    18.
    发明申请
    Lateral Junction Field Effect Transistor and Method of Manufacturing The Same 有权
    横向结场效应晶体管及其制造方法

    公开(公告)号：US20080277696A1

    公开(公告)日：2008-11-13

    申请号：US12179320

    申请日：2008-07-24

    申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

    发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

    IPC分类号： H01L29/808

    CPC分类号： H01L29/0634 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/808

    摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

    摘要翻译： 横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质 以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及 具有与第一栅极电极层相同的电位。 因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

    4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate
    20.
    发明申请
    4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate 审中-公开
    4H型多晶氮化镓基半导体器件

    公开(公告)号：US20050218414A1

    公开(公告)日：2005-10-06

    申请号：US10812416

    申请日：2004-03-30

    申请人： Tetsuzo Ueda ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

    发明人： Tetsuzo Ueda ,  Tsunenobu Kimoto ,  Hiroyuki Matsunami ,  Jun Suda ,  Norio Onojima

    IPC分类号： H01L29/26 ,  H01L21/02 ,  H01L21/20 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01L33/18 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

    CPC分类号： H01L21/02082 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/18 ,  H01L33/32

    摘要： 4H-InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H-AlN or 4H-AlGaN on (11-20) a-face 4H-SiC substrates. Typically, non polar 4H-AlN is grown on 4H-SiC (11-20) by molecular beam epitaxy (MBE). Subsequently, III-V nitride device layers are grown by metal organic chemical vapor deposition (MOCVD) with 4H-polytype for all of the layers. The non-polar device does not contain any built-in electric field due to the spontaneous and piezoelectric polarization. The optoelectonic devices on the non-polar face exhibits higher emission efficiency with shorter emission wavelength because the electrons and holes are not spatially separated in the quantum well. Vertical device configuration for lasers and light emitting diodes(LEDs) using conductive 4H-AlGaN interlayer on conductive 4H-SiC substrates makes the chip size and series resistance smaller. The elimination of such electric field also improves the performance of high speed and high power transistors. The details of the epitaxial growth s and the processing procedures for the non-polar III-V nitride devices on the non-polar SiC substrates are also disclosed.

    摘要翻译： 在（11-20）a面4H-SiC衬底上的4H-AlN或4H-AlGaN上形成4H-InGaAlN合金基非极性面上的光电子和电子器件。 通常，非极性4H-AlN通过分子束外延（MBE）在4H-SiC（11-20）上生长。 随后，通过用于所有层的4H-多型金属有机化学气相沉积（MOCVD）生长III-V族氮化物器件层。 由于自发和压电极化，非极性器件不包含任何内置的电场。 由于电子和空穴在量子阱中空间不分开，非极性面上的光电子器件表现出更高的发射效率，发射波长更短。 在导电4H-SiC衬底上使用导电4H-AlGaN夹层的激光器和发光二极管（LED）的垂直器件配置使芯片尺寸和串联电阻更小。 这种电场的消除也提高了高速和高功率晶体管的性能。 还公开了非极性SiC衬底上的非极性III-V族氮化物器件的外延生长细节和处理步骤。