公开(公告)号：US20070018198A1

公开(公告)日：2007-01-25

申请号：US11186001

申请日：2005-07-20

Applicant: George Brandes ,  Xueping Xu ,  Joseph Dion ,  Robert Vaudo ,  Jeffrey Flynn

Inventor： George Brandes ,  Xueping Xu ,  Joseph Dion ,  Robert Vaudo ,  Jeffrey Flynn

IPC: H01L29/732

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

Abstract: An electronic device structure comprises a substrate layer of semi-insulating AlxGayInzN, a first layer comprising AlxGayInzN, a second layer comprising Alx′Gay′Inz′N, and at least one conductive terminal disposed in or on any of the foregoing layers, with the first and second layers being adapted to form a two dimensional electron gas is provided. A thin (

Abstract translation: 电子器件结构包括半绝缘的衬底层，包括Al x的第一层， 在N z中，第二层包括Al x Si x Ga y In， SUB> z'N，以及至少一个导电端子，其设置在上述层中的任一层中或之中，其中第一层和第二层适于形成二维电子气。 在天然半绝缘III-V衬底上同时外延生长薄（<1000nm）III-氮化物层，以提供改进的电子器件（例如，HEMT）结构。

公开(公告)号：US20050104162A1

公开(公告)日：2005-05-19

申请号：US10714307

申请日：2003-11-14

Applicant: Xueping Xu ,  Robert Vaudo ,  Jeffrey Flynn ,  George Brandes

Inventor： Xueping Xu ,  Robert Vaudo ,  Jeffrey Flynn ,  George Brandes

IPC: H01L29/04 ,  H01L29/20

CPC classification number: C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  Y10T83/0524 ,  Y10T428/31

Abstract: A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

Abstract translation: III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割 在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2μmAFM扫描测量的RMS粗糙度小于1nm，位错密度小于 3E6厘米-2。 可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。 在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。

公开(公告)号：US20050103257A1

公开(公告)日：2005-05-19

申请号：US10712351

申请日：2003-11-13

Applicant: Xueping Xu ,  Robert Vaudo

Inventor： Xueping Xu ,  Robert Vaudo

IPC: C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  B32B15/04 ,  B32B1/00 ,  B32B9/00 ,  B32B19/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L31/184 ,  H01L33/0075 ,  Y10T428/21 ,  Y10T428/265

Abstract: Large area, uniformly low dislocation density single crystal III-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm2, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm−2, and a dislocation density standard deviation ratio of less than 25%. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102 pits/cm2 of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.

Abstract translation: 大面积均匀低位错密度的单晶III-V族氮化物材料，例如，具有大于15cm 2的大面积的氮化镓，至少1mm的厚度，不是的平均位错密度 超过5E5cm -2，位错密度标准偏差比小于25％。 这样的材料可以通过以下工艺在基底上形成，该方法包括：（i）在凹陷生长条件下在衬底上生长III-V族氮化物材料的第一相，例如在III的生长表面的至少50％上形成凹坑 -V氮化物材料，其中生长表面上的凹坑密度为生长表面的至少10 2个/厘米2，和（ii）生长的第二阶段 在填埋条件下的III-V族氮化物材料。

公开(公告)号：US06445006B1

公开(公告)日：2002-09-03

申请号：US09361910

申请日：1999-07-27

Applicant: George R. Brandes ,  Xueping Xu

Inventor： George R. Brandes ,  Xueping Xu

IPC: H01L21365

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01J1/304 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/742 ,  Y10S977/776

Abstract: A microelectronic or microelectromechanical device, including a substrate and a carbon microfiber formed thereon, which may be employed as an electrical connector for the device or as a selectively translational component of a microelectromechanical (MEMS) device.

Abstract translation: 微电子或微机电装置，包括其上形成的基底和碳微纤维，其可用作该装置的电连接器或微机电（MEMS）装置的选择性平移部件。

公开(公告)号：US5872422A

公开(公告)日：1999-02-16

申请号：US575485

申请日：1995-12-20

Applicant: Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

Inventor： Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/939

Abstract: Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.

Abstract translation: 包含冷阴极的电子场发射器件（冷阴极），真空微电子器件和场发射显示器及其制造和使用方法。 更具体地，包括直接生长在基底材料上的电子发射结构的冷阴极器件。 本发明还涉及用于制造场致发射器件的图案化前体衬底及其制造方法，并且还涉及直接在衬底上直接催化生长其它电子结构，例如膜，锥体，圆柱体，金字塔等。

公开(公告)号：US08212259B2

公开(公告)日：2012-07-03

申请号：US10313561

申请日：2002-12-06

Applicant: Jeffrey S. Flynn ,  George R. Brandes ,  Robert P. Vaudo ,  David M. Keogh ,  Xueping Xu ,  Barbara E. Landini

Inventor： Jeffrey S. Flynn ,  George R. Brandes ,  Robert P. Vaudo ,  David M. Keogh ,  Xueping Xu ,  Barbara E. Landini

IPC: H01L29/20 ,  H01L21/18

CPC classification number: H01L33/32 ,  C30B23/00 ,  C30B25/00 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262

Abstract: A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V/III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 102 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

Abstract translation: III-V族氮化物同质外延微电子器件结构，包括沉积在III-V族氮化物材料衬底上，例如具有独特性质的III-V族氮化物同质外延表层，其具有改善的外延质量。 描述了各种处理技术，包括通过使用III族源材料和氮源材料通过VPE工艺沉积III-V族氮化物同质外延层，在相应的III-V族氮化物材料基板上形成III-V族氮化物同质外延层的方法 在包括约1至约105范围内的V / III比的工艺条件下，氮源材料分压在约1至约103托的范围内，生长温度在约500至约1250摄氏度的范围内 ，并且生长速率在约0.1至约102微米/小时的范围内。 III-V族氮化物同质外延微电子器件结构有用地用于诸如UV LED，高电子迁移率晶体管等的器件应用中。

公开(公告)号：US07897490B2

公开(公告)日：2011-03-01

申请号：US11606783

申请日：2006-11-30

Applicant: Edward A. Preble ,  Lianghong Liu ,  Andrew D. Hanser ,  N. Mark Williams ,  Xueping Xu

Inventor： Edward A. Preble ,  Lianghong Liu ,  Andrew D. Hanser ,  N. Mark Williams ,  Xueping Xu

IPC: H01L21/00

CPC classification number: H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.

Abstract translation: 在制造GaN制品的方法中，在单晶衬底上沉积外延氮化物层。 通过HVPE在基本上3D生长模式下在外延氮化物层上生长3D成核GaN层。 在将成长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在3D成核层上生长GaN过渡层。 在基本上2D生长模式下，通过HVPE在过渡层上生长体GaN层。 在体GaN层上生长多晶GaN层以形成GaN /衬底双层。 GaN /衬底双层可以从生长温度冷却到环境温度，其中GaN材料横向裂开并与衬底分离，形成独立制品。

公开(公告)号：US20100327291A1

公开(公告)日：2010-12-30

申请号：US11606783

申请日：2006-11-30

Applicant: Edward A. Preble ,  Lianghong Liu ,  Andrew D. Hanser ,  N. Mark Williams ,  Xueping Xu

Inventor： Edward A. Preble ,  Lianghong Liu ,  Andrew D. Hanser ,  N. Mark Williams ,  Xueping Xu

IPC: H01L29/20 ,  H01L21/78

CPC classification number: H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.

Abstract translation: 在制造GaN制品的方法中，在单晶衬底上沉积外延氮化物层。 通过HVPE在基本上3D生长模式下在外延氮化物层上生长3D成核GaN层。 在将成长模式从基本上3D生长模式改变为基本上2D生长模式的条件下，通过HVPE在3D成核层上生长GaN过渡层。 在基本上2D生长模式下，通过HVPE在过渡层上生长体GaN层。 在体GaN层上生长多晶GaN层以形成GaN /衬底双层。 GaN /衬底双层可以从生长温度冷却到环境温度，其中GaN材料横向裂开并与衬底分离，形成独立制品。

公开(公告)号：US07700203B2

公开(公告)日：2010-04-20

申请号：US12102275

申请日：2008-04-14

Applicant: Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

Inventor： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

IPC: B32B18/00 ,  B32B11/08

CPC classification number: C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  Y10T83/0524 ,  Y10T428/31

Abstract: A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

Abstract translation: III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割 在约0.2至约10度的范围内的角度，其中该表面具有通过50×50μm2 AFM扫描测量的RMS粗糙度小于1nm，位错密度小于3E6cm-2。 可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。 在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。

公开(公告)号：US20100044718A1

公开(公告)日：2010-02-25

申请号：US12085857

申请日：2006-11-30

Applicant: Andrew D. Hanser ,  Lianghong Liu ,  Edward A. Preble ,  Denis Tsvetkov ,  Nathaniel Mark Williams ,  Xueping Xu

Inventor： Andrew D. Hanser ,  Lianghong Liu ,  Edward A. Preble ,  Denis Tsvetkov ,  Nathaniel Mark Williams ,  Xueping Xu

IPC: H01L29/12 ,  H01L21/04

CPC classification number: H01L21/02694 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/0688 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/30 ,  H01L33/32

Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.

Abstract translation: 用于制造光电子器件（如发光二极管（LED），激光二极管（LD））和光电检测器的III族（Al，Ga，In）N单晶，制品和膜以及电子器件（如高电子迁移率晶体管 由III-V族氮化物组成的HEMT）以及制造这种晶体，制品和薄膜的方法。