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    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
    14.
    发明授权
    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
    III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法

    公开(公告)号：US08594145B2

    公开(公告)日：2013-11-26

    申请号：US12837291

    申请日：2010-07-15

    申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    IPC分类号： H01S5/00

    CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

    摘要： A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.

    摘要翻译： III族氮化物半导体激光器件包括具有支撑基底，半导体区域和电极的激光器结构。 支撑基底包括六边形III族氮化物半导体和半极性主表面。 半导体区域包括第一和第二覆层以及沿着垂直于半极性主表面的轴布置的有源层。 六边形III族氮化物半导体的c轴相对于法线轴线朝向六边形III族氮化物半导体的m轴倾斜角度ALPHA。 激光器结构包括第一和第二断裂面，其与由六角形III族氮化物半导体的法线轴和m轴限定的m-n平面交叉。 激光装置的激光腔包括第一和第二断裂面。 第一和第二断裂面中的每一个在支撑基座的端面上具有条纹结构。

    Nonvolatile memory element having a thin platinum containing electrode
    16.
    发明授权
    Nonvolatile memory element having a thin platinum containing electrode 有权
    具有薄铂电极的非易失性存储元件

    公开(公告)号：US08445885B2

    公开(公告)日：2013-05-21

    申请号：US13132058

    申请日：2009-12-01

    申请人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    发明人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    IPC分类号： H01L29/02

    CPC分类号： H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

    摘要： A nonvolatile memory element includes first and second electrodes, and a resistance variable layer disposed therebetween. At least one of the first and second electrodes includes a platinum-containing layer. The resistance variable layer includes a first oxygen-deficient transition metal oxide layer which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer. When oxygen-deficient transition metal oxides included in the first and second oxygen-deficient transition metal oxide layers are expressed as MOx, and MOy, respectively, x

    摘要翻译： 非易失性存储元件包括第一和第二电极以及设置在它们之间的电阻变化层。 第一和第二电极中的至少一个包括含铂层。 电阻变化层包括不与含铂层物理接触的第一缺氧过渡金属氧化物层和设置在第一缺氧过渡金属氧化物层和第二缺氧过渡金属氧化物层之间的第二缺氧过渡金属氧化物层 所述含铂层并且与所述含铂层物理接触。 包含在第一和第二缺氧过渡金属氧化物层中的缺氧过渡金属氧化物分别表示为MOx，MOy分别表示为x

    Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
    17.
    发明授权
    Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device 失效
    III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法

    公开(公告)号：US08389312B2

    公开(公告)日：2013-03-05

    申请号：US13367846

    申请日：2012-02-07

    申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

    发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

    IPC分类号： H01L21/00

    CPC分类号： H01S5/3202 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/22 ,  H01S2301/14

    摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

    摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
    18.
    发明授权
    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 失效
    III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法

    公开(公告)号：US08213475B2

    公开(公告)日：2012-07-03

    申请号：US13209101

    申请日：2011-08-12

    申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    IPC分类号： H01S5/323 ,  H01L29/06 ,  H01L29/12

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/3202 ,  H01S5/3211

    摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.

    摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。 在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状 。 断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。 使用能够实现低阈值电流的频带转换的发射是可行的。

    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
    19.
    发明授权
    Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 失效
    III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法

    公开(公告)号：US08071405B2

    公开(公告)日：2011-12-06

    申请号：US12836281

    申请日：2010-07-14

    申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

    IPC分类号： H01L21/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/3202 ,  H01S5/3211

    摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.

    摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。 在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状 。 断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。 使用能够实现低阈值电流的频带转换的发射是可行的。

    Content distribution server for distributing content frame for reproducing music and terminal
    20.
    发明授权
    Content distribution server for distributing content frame for reproducing music and terminal 失效
    用于分发用于再现音乐和终端的内容帧的内容分发服务器

    公开(公告)号：US07970618B2

    公开(公告)日：2011-06-28

    申请号：US10592365

    申请日：2005-03-31

    申请人： Shigeyuki Sakazawa ,  Koichi Takagi ,  Hiroshi Mitsuhashi ,  Koji Katayama

    发明人： Shigeyuki Sakazawa ,  Koichi Takagi ,  Hiroshi Mitsuhashi ,  Koji Katayama

    IPC分类号： G10L19/00

    CPC分类号： H04L12/18 ,  G06Q30/0601 ,  H04M19/04

    摘要： There is provided a system capable of distributing code-compressed data based on audio data on a music composition via the Internet to a mobile telephone so that a user can cut out a desired range from the code-compressed data and register it as a call sound. The system has a data structure of a content frame (3GPP, 3GPP2) containing code-compressed data (AAC) of audio data. The content frame has at least one cut-out position information in the AAC data in its extended function section. A mobile telephone has a content storage unit, a cut-out selection unit to be used by the user to select at least one cut-out position information contained in the extended function section of the content frame, and a data cut-out section for cutting out data from the code-compressed data. The code-compressed data which has been cut out is decompressed when called and the sound is outputted from a loudspeaker.

    摘要翻译： 提供了一种能够经由因特网将基于音乐数据的音频数据的代码压缩数据分发到移动电话的系统，使得用户可以从代码压缩数据中切出期望的范围并将其注册为通话声音 。 该系统具有包含音频数据的代码压缩数据（AAC）的内容帧（3GPP，3GPP2）的数据结构。 内容帧在其扩展功能部分中的AAC数据中具有至少一个切出位置信息。 移动电话具有内容存储单元，切入选择单元，用于用户选择包含在内容帧的扩展功能部分中的至少一个切出位置信息，以及数据切出部分，用于 从代码压缩数据中切出数据。 已被切出的代码压缩数据在被呼叫时被解压缩，声音从扬声器输出。