公开(公告)号：US20230295794A1

公开(公告)日：2023-09-21

申请号：US18201442

申请日：2023-05-24

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC分类号： C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/32 ,  H01L21/02

CPC分类号： C23C16/042 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/32 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02211 ,  H01L21/0217

摘要： Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20220372616A1

公开(公告)日：2022-11-24

申请号：US17315223

申请日：2021-05-07

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC分类号： C23C16/04 ,  C23C16/56 ,  C23C16/02

摘要： Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20220356197A1

公开(公告)日：2022-11-10

申请号：US17236020

申请日：2021-04-21

申请人： Applied Materials, Inc.

发明人： Chandan Kr Barik ,  John Sudijono ,  Chandan Das ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC分类号： C07F11/00 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  C23C16/02 ,  C23C16/44

摘要： Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US11124874B2

公开(公告)日：2021-09-21

申请号：US16561780

申请日：2019-09-05

申请人： Applied Materials, Inc.

发明人： Hua Chung ,  Feng Q. Liu ,  Schubert Chu

IPC分类号： C23C16/06 ,  C23C16/455

摘要： Methods for depositing one or more iridium materials on a surface of a substrate are provided. A method for forming the iridium material (e.g., metallic iridium and/or iridium silicide) on the substrate can include sequentially exposing the substrate to an iridium precursor and a reducing agent during an atomic layer deposition (ALD) process within a process chamber and depositing the iridium material on the substrate. In some examples, the reducing agent can be or include hydrogen gas (H2), a hydrogen plasma, atomic hydrogen, hydrazine or derivatives thereof, or any combination thereof and the deposited iridium material is metallic iridium. In other examples, the reducing agent contains one or more silicon precursors and the iridium material is an iridium silicide.

公开(公告)号：US10043709B2

公开(公告)日：2018-08-07

申请号：US14931417

申请日：2015-11-03

申请人： APPLIED MATERIALS, INC.

发明人： Hua Ai ,  Jiang Lu ,  Avgerinos V. Gelatos ,  Paul F. Ma ,  Sang Ho Yu ,  Feng Q. Liu ,  Xinyu Fu ,  Weifeng Ye

IPC分类号： H01L21/768 ,  C23C16/06 ,  H01L21/285 ,  C23C16/04 ,  H01L23/532

摘要： Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

公开(公告)号：US09916975B2

公开(公告)日：2018-03-13

申请号：US14919149

申请日：2015-10-21

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

CPC分类号： H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

摘要： Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US11891690B2

公开(公告)日：2024-02-06

申请号：US16990303

申请日：2020-08-11

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Alexander Jansen ,  Mark Saly

IPC分类号： C23C16/18 ,  C23C16/455 ,  H01L21/285 ,  H01L21/02

CPC分类号： C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/0234 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/28568

摘要： A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.

公开(公告)号：US11643721B2

公开(公告)日：2023-05-09

申请号：US16129232

申请日：2018-09-12

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC分类号： C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC分类号： C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

摘要： Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US20220301883A1

公开(公告)日：2022-09-22

申请号：US17836694

申请日：2022-06-09

申请人： Applied Materials, Inc.

发明人： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC分类号： H01L21/311 ,  H01L21/02

摘要： Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

公开(公告)号：US11450525B2

公开(公告)日：2022-09-20

申请号：US16131931

申请日：2018-09-14

申请人： Applied Materials, Inc.

发明人： Liqi Wu ,  Hung Nguyen ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Feng Q. Liu ,  David Thompson

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/04 ,  C23C16/20

摘要： Methods of depositing films are described. Specifically, methods of depositing metal oxide films are described. A metal oxide film is selectively deposited on a metal layer relative to a dielectric layer by exposing a substrate to an organometallic precursor followed by exposure to an oxidant.