公开(公告)号：US20050164497A1

公开(公告)日：2005-07-28

申请号：US10934850

申请日：2004-09-03

申请人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Ramin Emami ,  Hongbin Fang

发明人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Ramin Emami ,  Hongbin Fang

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768

CPC分类号： H01L21/02074 ,  H01L21/288 ,  H01L21/67161 ,  H01L21/6723 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864

摘要： Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber comprises heating the substrate in a vacuum environment while providing a gas, such as a noble gas, a reducing gas such as hydrogen gas, a non-reducing gas such as nitrogen gas, or combinations thereof. In another embodiment, annealing in a plasma chamber comprises annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, or combinations thereof.

摘要翻译： 本发明的实施例涉及在其之前的无电沉积之前在热退火室和/或等离子体退火室中退火衬底的装置和方法。 在一个实施例中，热退火室中的退火包括在真空环境中加热衬底，同时提供诸如惰性气体的气体，诸如氢气的还原气体，诸如氮气的非还原性气体，或其组合 。 在另一个实施例中，等离子体室中的退火包括在诸如来自氩气，氦气，氢气或其组合的等离子体的等离子体中退火衬底。

公开(公告)号：US20050085031A1

公开(公告)日：2005-04-21

申请号：US10967099

申请日：2004-10-15

申请人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Timothy Weidman ,  Dmitry Lubomirsky

发明人： Sergey Lopatin ,  Arulkumar Shanmugasundram ,  Yosef Shacham-Diamand ,  Timothy Weidman ,  Dmitry Lubomirsky

IPC分类号： C23C18/18 ,  C23C18/50 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/76849 ,  C23C18/1844 ,  C23C18/50 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/76867 ,  H01L21/76868 ,  H01L21/76874

摘要： Embodiments of the invention generally provide compositions of activation-alloy solutions, methods to deposit activation-alloys and electronic devices including activation-alloys and capping layers. In one embodiment, a method for depositing a capping layer for a semiconductor device is provided which includes exposing a conductive layer on a substrate surface to an activation-alloy solution, forming an activation-alloy layer on the conductive layer using the activation-alloy solution, and depositing the capping layer on the activation-alloy layer using an electroless deposition solution.

摘要翻译： 本发明的实施方案通常提供活化合金溶液的组合物，沉积活化合金的方法和包括活化合金和覆盖层的电子器件。 在一个实施例中，提供了一种用于沉积半导体器件的覆盖层的方法，其包括将基板表面上的导电层暴露于活化合金溶液，使用活化合金溶液在导电层上形成活化合金层 ，并使用无电镀沉积溶液将所述封盖层沉积在所述活化合金层上。

公开(公告)号：US07945086B2

公开(公告)日：2011-05-17

申请号：US11622793

申请日：2007-01-12

申请人： Yehiel Gotkis ,  Sergey Lopatin ,  Mehran Nasser-Ghodsi

发明人： Yehiel Gotkis ,  Sergey Lopatin ,  Mehran Nasser-Ghodsi

IPC分类号： G06K9/00 ,  H01L21/3205

CPC分类号： H01L22/12 ,  H01L22/34

摘要： A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a statistical process control to adjust the parameters used to form device structures on the integrated circuit wafer. The test structures are formed on an integrated circuit wafer having two or more die. Each die has one or more integrated circuit structures. The test structures are formed on scribe lines between two or more adjacent die. Each test structure may correspond in dimensions and/or composition to one or more of the integrated circuit structures.

摘要翻译： 本发明的第一实施例涉及一种用于评估集成电路晶片上的结构质量的方法。 在集成的或在测试晶片上形成的测试结构暴露于电子束和电子束活化的化学蚀刻。 电子束活化的蚀刻气体或蒸气蚀刻测试结构，其在蚀刻后分析以确定测试结构的质量的度量。 可以在统计过程控制中使用质量测量来调整用于在集成电路晶片上形成器件结构的参数。 测试结构形成在具有两个或更多个管芯的集成电路晶片上。 每个管芯具有一个或多个集成电路结构。 测试结构形成在两个或更多相邻模具之间的划线上。 每个测试结构可以在尺寸和/或组成上与一个或多个集成电路结构相对应。

公开(公告)号：US20110031113A1

公开(公告)日：2011-02-10

申请号：US12906008

申请日：2010-10-15

申请人： Sergey Lopatin ,  Nicolay Y. Kovarsky ,  David Eaglesham ,  John O. Dukovic ,  Charles Gay

发明人： Sergey Lopatin ,  Nicolay Y. Kovarsky ,  David Eaglesham ,  John O. Dukovic ,  Charles Gay

IPC分类号： C25D17/00

CPC分类号： H01L31/022425 ,  C25D5/022 ,  C25D5/10 ,  C25D7/126 ,  Y02E10/50

摘要： Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.

摘要翻译： 本发明的实施例考虑使用新颖的高速电镀方法和装置形成低成本太阳能电池，以形成具有使用电化学电镀工艺的选择性形成的金属线的金属接触结构。 本文所述的装置和方法消除了执行一个或多个高温丝网印刷工艺以在太阳能电池基板的表面上形成导电特征的需要。 在太阳能电池器件中形成的互连的电阻极大地影响太阳能电池的效率。 因此，希望形成具有可靠和成本有效的低电阻连接的太阳能电池装置。 因此，本文描述的本发明的一个或多个实施例适用于使用包含普通金属（例如铜）的电化学电镀工艺形成低成本且可靠的互连层。

公开(公告)号：US07879730B2

公开(公告)日：2011-02-01

申请号：US11622605

申请日：2007-01-12

申请人： Mehran Naser-Ghodsi ,  Garrett Pickard ,  Rudy F. Garcia ,  Tzu-Chin Chuang ,  Ming Lun Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles K. MacDonald

发明人： Mehran Naser-Ghodsi ,  Garrett Pickard ,  Rudy F. Garcia ,  Tzu-Chin Chuang ,  Ming Lun Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles K. MacDonald

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23F4/00 ,  H01J2237/31744 ,  H01L21/3065 ,  H01L21/32136

摘要： Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

摘要翻译： 公开了电子束激活化学蚀刻（EBACE）期间的蚀刻选择性增强。 当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。 通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。 可以以多种方式增强由于电子束和气体组成之间的相互作用而导致的靶的蚀刻选择性。

公开(公告)号：US20080128013A1

公开(公告)日：2008-06-05

申请号：US11566200

申请日：2006-12-01

申请人： Sergey Lopatin ,  David Eaglesham ,  Charles Gay

发明人： Sergey Lopatin ,  David Eaglesham ,  Charles Gay

IPC分类号： H01L31/042 ,  C23C14/00

CPC分类号： C25D5/022 ,  C25D5/18 ,  C25D7/08 ,  C25D17/00 ,  C25D17/001 ,  H01L31/022425 ,  H01L31/02245 ,  H01L31/022466 ,  H01L31/03926 ,  H01L31/0465 ,  H01L31/0508 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/188 ,  Y02E10/50

摘要： Embodiments of the invention contemplate the formation of a low cost flexible solar cell using a novel electroplating method and apparatus to form a metal contact structure. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. Solar cell substrates that may benefit from the invention include flexible substrates may have an active region that contains organic material, single crystal silicon, multi-crystalline silicon, polycrystalline silicon, germanium, and gallium arsenide, cadmium telluride, cadmium sulfide, copper indium gallium selenide, copper indium selenide, gallilium indium phosphide, as well as heterojunction cells that are used to convert sunlight to electrical power. The flexible substrates may have a flexible base that is adapted to support the active region of the solar cell device.

摘要翻译： 本发明的实施例考虑使用新颖的电镀方法和装置形成金属接触结构来形成低成本的柔性太阳能电池。 本文所述的装置和方法消除了执行一个或多个高温丝网印刷工艺以在太阳能电池基板的表面上形成导电特征的需要。 在太阳能电池器件中形成的互连的电阻极大地影响太阳能电池的效率。 可以受益于本发明的太阳能电池基板包括柔性基板可以具有含有有机材料，单晶硅，多晶硅，多晶硅，锗和砷化镓，碲化镉，硫化镉，铜铟镓硒的有源区 ，铜铟硒化铟，磷化铟镓，以及用于将阳光转换成电力的异质结电池。 柔性基板可以具有适于支撑太阳能电池装置的有源区域的柔性基座。

公开(公告)号：US20080092947A1

公开(公告)日：2008-04-24

申请号：US11552497

申请日：2006-10-24

申请人： Sergey Lopatin ,  Charles Gay ,  David Eaglesham ,  John O. Dukovic ,  Nicolay Y. Kovarsky

发明人： Sergey Lopatin ,  Charles Gay ,  David Eaglesham ,  John O. Dukovic ,  Nicolay Y. Kovarsky

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/02245 ,  Y02E10/50

摘要： Embodiments of the invention contemplate the formation of a low cost solar cell metal contact structure that has improved electrical and mechanical properties through the use of an electrochemical plating process. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connections that is reliable and cost effective. One or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing common metal, such as copper. However, generally the electroplated portions of the interconnecting layer may contain a substantially pure metal or a metal alloy layer. Methods are discussed herein that are used to form a solar cell containing conductive metal interconnect layer(s) that have a low intrinsic stress.

摘要翻译： 本发明的实施例考虑到通过使用电化学电镀工艺形成具有改善的电气和机械性能的低成本太阳能电池金属接触结构。 在太阳能电池器件中形成的互连的电阻极大地影响太阳能电池的效率。 因此，希望形成具有可靠和成本有效的低电阻连接的太阳能电池装置。 使用本文所述的本发明的一个或多个实施例适用于使用包含普通金属（例如铜）的电化学电镀工艺形成低成本且可靠的互连层。 然而，通常互连层的电镀部分可以包含基本上纯的金属或金属合金层。 本文讨论了用于形成含有具有低固有应力的导电金属互连层的太阳能电池的方法。

公开(公告)号：US20060284626A1

公开(公告)日：2006-12-21

申请号：US10546763

申请日：2004-02-12

申请人： Sascha D'Angelico ,  Sergey Lopatin

发明人： Sascha D'Angelico ,  Sergey Lopatin

IPC分类号： H04B7/00 ,  G01R27/08

CPC分类号： G01F23/2966 ,  G01F23/2968

摘要： Apparatus for measuring and/or monitoring a process variable of a medium. The apparatus includes: an oscillatable unit; a driver/receiver unit, which excites the oscillatable unit to oscillate, and/or which receives its oscillations; a control/evaluation unit, which controls the driver/receiver unit, and/or which evaluates the oscillations of the oscillatable unit; and at least one transmitting line and one receiving line between the control/evaluation unit and the driver/receiver unit. At least a third line is provided, which is embodied and arranged in a manner such that it is located between the transmitting line and the receiving line, and is connected with a voltage source, which has an output impedance, which is smaller than the impedance of a condensate bridge.

公开(公告)号：US20050085073A1

公开(公告)日：2005-04-21

申请号：US10687186

申请日：2003-10-16

申请人： Sergey Lopatin ,  Paul Besser ,  Alline Myers ,  Jeremias Romero ,  Minh Tran ,  Lu You ,  Connie Wang

发明人： Sergey Lopatin ,  Paul Besser ,  Alline Myers ,  Jeremias Romero ,  Minh Tran ,  Lu You ,  Connie Wang

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76846 ,  H01L21/76877

摘要： An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed by the gas, and the dielectric material includes an aperture.

摘要翻译： 示例性实施例涉及在集成电路制造工艺中使用粘附前体的方法。 该方法包括在介电材料上提供材料的气体并在粘附前体层上提供铜层。 粘附前体层由气体形成，电介质材料包括孔。

公开(公告)号：US06515368B1

公开(公告)日：2003-02-04

申请号：US10016410

申请日：2001-12-07

申请人： Sergey Lopatin ,  Alexander H. Nickel

发明人： Sergey Lopatin ,  Alexander H. Nickel

IPC分类号： H01L23532

CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of reducing electromigration in copper interconnect lines by restricting Cu-diffusion pathways along a Cu surface via doping the Cu surface with Zn from an interim copper-zinc alloy (Cu—Zn) thin film electroplated on the copper (Cu) surface from a stable chemical solution, and controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using interim reduced-oxygen Cu—Zn alloy thin films for forming an encapsulated dual-inlaid interconnect structure. The films are formed by electroplating a Cu surface via by electroplating, the Cu surface in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu—Zn alloy thin films and a Cu-fill; and planarizing the interconnect structure.

摘要翻译： 一种通过在铜（Cu）表面上电镀铜离子铜（Cu）的中间铜 - 锌合金（Cu-Zn）薄膜上，通过用Zn掺杂Cu表面来限制沿Cu表面的Cu扩散路径来减少铜互连线中的电迁移的方法 稳定的化学溶液，并且控制其Zn掺杂，这也提高了互连可靠性和耐腐蚀性，以及由此形成的半导体器件。 该方法包括使用临时还原氧Cu-Zn合金薄膜来形成封装的双镶嵌互连结构。 通过电镀电镀Cu表面，通过电镀Cu晶体，以独特的含有Zn和Cu盐的化学溶液，它们的络合剂，pH调节剂和表面活性剂形成Cu表面; 并对中间电镀Cu-Zn合金薄膜和Cu填充进行退火; 并平坦化互连结构。