公开(公告)号：US20120061795A1

公开(公告)日：2012-03-15

申请号：US12878803

申请日：2010-09-09

申请人： Hsiao-Tsung Yen ,  Hsien-Pin Hu ,  Chin-Wei Kuo ,  Sally Liu

发明人： Hsiao-Tsung Yen ,  Hsien-Pin Hu ,  Chin-Wei Kuo ,  Sally Liu

IPC分类号： H01L29/92 ,  H01L21/265

CPC分类号： H01L27/0296 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/60 ,  H01L29/861 ,  H01L2223/6622 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014

摘要： A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the semiconductor substrate. A well region of a second conductivity type opposite the first conductivity type encircles the TSV, and extends from the first surface to the second surface of the semiconductor substrate.

摘要翻译： 一种器件包括第一导电类型的半导体衬底，其中半导体衬底包括与第一表面相对的第一表面和第二表面。 贯穿基板通孔（TSV）从半导体基板的第一表面延伸到第二表面。 与第一导电类型相反的第二导电类型的阱区域包围TSV，并且从半导体衬底的第一表面延伸到第二表面。

公开(公告)号：US20110291232A1

公开(公告)日：2011-12-01

申请号：US12791705

申请日：2010-06-01

申请人： Hsiao-Tsung Yen ,  Chin-Wei Kuo ,  Hsien-Pin Hu ,  Sally Liu ,  Ming-Fa Chen ,  Jhe-Ching Lu

发明人： Hsiao-Tsung Yen ,  Chin-Wei Kuo ,  Hsien-Pin Hu ,  Sally Liu ,  Ming-Fa Chen ,  Jhe-Ching Lu

IPC分类号： H01L29/86 ,  H01F5/00 ,  H01L21/50

CPC分类号： H01L23/5227 ,  H01F17/0013 ,  H01F27/2804 ,  H01L23/49822 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/00 ,  H01L2224/0401

摘要： In accordance with an embodiment, a semiconductor device comprises a semiconductor die, an interposer, and conductive bumps bonding the semiconductor die to the interposer. The semiconductor die comprises a first metallization layer, and the first metallization layer comprises a first conductive pattern. The interposer comprises a second metallization layer, and the second metallization layer comprises a second conductive pattern. Some of the conductive bumps electrically couple the first conductive pattern to the second conductive pattern to form a coil. Other embodiments contemplate other configurations of coils, inductors, and/or transformers, and contemplate methods of manufacture.

摘要翻译： 根据实施例，半导体器件包括半导体管芯，插入件和将半导体管芯接合到插入件的导电凸块。 半导体管芯包括第一金属化层，第一金属化层包括第一导电图案。 插入器包括第二金属化层，并且第二金属化层包括第二导电图案。 一些导电凸块将第一导电图案电耦合到第二导电图案以形成线圈。 其他实施例考虑了线圈，电感器和/或变压器的其他配置，并考虑了制造方法。

公开(公告)号：US20140008773A1

公开(公告)日：2014-01-09

申请号：US13541937

申请日：2012-07-05

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L25/065 ,  H01L21/50

CPC分类号： H01Q1/38 ,  H01L23/66 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01Q1/2283 ,  H01Q1/40 ,  H01Q7/00 ,  H01L2924/00

摘要： Some embodiments relate to a semiconductor module comprising an integrated antenna structure configured to wirelessly transmit signals. The integrated antenna structure has a lower metal layer and an upper metal layer. The lower metal layer is disposed on a lower die and is connected to a ground terminal. The upper metal layer is disposed on an upper die and is connected to a signal generator configured to generate a signal to be wirelessly transmitted. The upper die is stacked on the lower die and is connected to the lower die by way of an adhesion layer having one or more micro-bumps. By connecting the lower and upper die together by way of the adhesion layer, the lower and upper metal layers are separated from each other by a large spacing that provides for a good performance of the integrated antenna structure.

摘要翻译： 一些实施例涉及包括被配置为无线传输信号的集成天线结构的半导体模块。 集成天线结构具有下金属层和上金属层。 下金属层设置在下模上并连接到接地端子。 上金属层设置在上模上并连接到被配置为产生要无线传输的信号的信号发生器。 上模具堆叠在下模上，并通过具有一个或多个微凸块的粘合层连接到下模。 通过将粘合层连接在一起，下部和上部金属层彼此间隔开大间隔，从而提供了集成天线结构的良好性能。

公开(公告)号：US08552812B2

公开(公告)日：2013-10-08

申请号：US12963701

申请日：2010-12-09

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

IPC分类号： H03H5/00 ,  H01F5/00

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F2017/0086 ,  H01L23/5223 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.

公开(公告)号：US20120268229A1

公开(公告)日：2012-10-25

申请号：US13091440

申请日：2011-04-21

申请人： Hsiao-Tsung Yen ,  Huan-Neng Chen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Mei-Show Chen ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Huan-Neng Chen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Mei-Show Chen ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01F5/00 ,  H01F17/00

CPC分类号： H01F27/2804 ,  H01F17/0013 ,  H01F2017/002 ,  H01F2017/004 ,  H01F2027/2809 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.

摘要翻译： 器件包括衬底和衬底上的垂直电感器。 垂直电感器包括由金属形成的多个部件，其中每个部件在与基板的主表面垂直的多个平面中的一个平面中延伸。 金属线互连垂直电感器的多个部分中的相邻部分。

公开(公告)号：US09103884B2

公开(公告)日：2015-08-11

申请号：US12963511

申请日：2010-12-08

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Sa-Lly Liu

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Sa-Lly Liu

IPC分类号： G01R31/26 ,  G01R31/3185 ,  G11C29/56 ,  H01L21/66

CPC分类号： G01R31/2601 ,  G01R1/0491 ,  G01R31/2644 ,  G01R31/318511 ,  G11C29/56 ,  G11C2029/5602 ,  H01L22/34

摘要： A transmission line is provided. In one embodiment, the transmission line comprises a substrate, a well within the substrate, a shielding layer over the well, and a plurality of intermediate metal layers over the shielding layer, the plurality of intermediate metal layers coupled by a plurality of vias. The transmission line further includes a top metal layer over the plurality of intermediate metal layers. A test structure for de-embedding an on-wafer device, and a wafer are also disclosed.

摘要翻译： 提供传输线。 在一个实施例中，传输线包括衬底，衬底内的阱，阱上的屏蔽层以及屏蔽层上的多个中间金属层，多个中间金属层通过多个通孔耦合。 传输线还包括多个中间金属层上的顶部金属层。 还公开了用于去嵌入晶片装置和晶片的测试结构。

公开(公告)号：US20130099352A1

公开(公告)日：2013-04-25

申请号：US13280786

申请日：2011-10-25

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01F17/0013 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/552 ,  H01L23/642 ,  H01L23/645 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.

摘要翻译： 本发明提供一种半导体器件。 半导体器件包括具有集成电路（IC）器件的半导体衬底; 布置在半导体衬底上并与IC器件耦合的互连结构; 以及设置在半导体衬底上并集成在互连结构中的变压器。 变压器包括第一导电特征; 与所述第一导电特征电感耦合的第二导电特征; 电连接到第一导电特征的第三导电特征; 以及电连接到第二导电特征的第四导电特征。 第三和第四导电特征被设计和配置为电容耦合以增加变压器的耦合系数。

公开(公告)号：US20120146741A1

公开(公告)日：2012-06-14

申请号：US12963701

申请日：2010-12-09

申请人： Hsiao-Tsung YEN ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

发明人： Hsiao-Tsung YEN ,  Yu-Ling Lin ,  Ying-Ta Lu ,  Chin-Wei Kuo ,  Ho-Hsiang Chen

IPC分类号： H03H7/42 ,  H01L21/00

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F2017/0086 ,  H01L23/5223 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： An electronic device comprises first, second and third inductors connected in series and formed in a metal layer over a semiconductor substrate. The first and second inductors have a mutual inductance with each other. The second and third inductors having a mutual inductance with each other. A first capacitor has a first electrode connected to a first node. The first node is conductively coupled between the first and second inductors. A second capacitor has a second electrode connected to a second node. The second node is conductively coupled between the second and third inductors.

摘要翻译： 电子器件包括串联连接并形成在半导体衬底上的金属层中的第一，第二和第三电感器。 第一和第二电感器具有彼此的互感。 第二和第三电感器具有彼此的互感。 第一电容器具有连接到第一节点的第一电极。 第一节点电导耦合在第一和第二电感器之间。 第二电容器具有连接到第二节点的第二电极。 第二节点电导耦合在第二和第三电感器之间。

公开(公告)号：US20090153931A1

公开(公告)日：2009-06-18

申请号：US12142316

申请日：2008-06-19

申请人： Fu-Mei Hsu ,  Chin-Wei Kuo

发明人： Fu-Mei Hsu ,  Chin-Wei Kuo

IPC分类号： G02B26/08

CPC分类号： G02B26/085

摘要： A driving method of an optical actuator is applied to a projection system. The optical actuator includes a carrier, an optical element and an actuator component. The optical element is disposed at the carrier. The actuator component drives the carrier to rotate an angle. The driving method includes the steps of providing a driving signal having an initial section and a target section, and shifting the optical element between a position driven by the initial section and a position driven by the target section via the actuator component according to a first acceleration-deceleration section and a second acceleration-deceleration section. In addition, an optical actuator, a projection lens module and a projection system are also disclosed.

摘要翻译： 光学致动器的驱动方法被应用于投影系统。 光学致动器包括载体，光学元件和致动器部件。 光学元件设置在载体上。 致动器部件驱动载体旋转角度。 该驱动方法包括以下步骤：提供具有初始部分和目标部分的驱动信号，并且根据第一加速度将光学元件在由初始部分驱动的位置和经由致动器部件驱动的位置之间移动 减速部和第二加减速部。 此外，还公开了光学致动器，投影透镜模块和投影系统。

公开(公告)号：US20130228894A1

公开(公告)日：2013-09-05

申请号：US13411052

申请日：2012-03-02

申请人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

发明人： Hsiao-Tsung Yen ,  Yu-Ling Lin ,  Chin-Wei Kuo ,  Ho-Hsiang Chen ,  Min-Chie Jeng

IPC分类号： H01L27/06 ,  H01L21/768

CPC分类号： H01L23/5223 ,  H01L28/60 ,  H01L28/88 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an integrated circuit. The integrated circuit includes a substrate having a surface that is defined by a first axis and a second axis perpendicular to the first axis; and a capacitor structure disposed on the substrate. The capacitor structure includes a first conductive component; a second conductive component and a third conductive component symmetrically configured on opposite sides of the first conductive component. The first, second and third conductive components are separated from each other by respective dielectric material.

摘要翻译： 本发明提供集成电路。 集成电路包括具有由第一轴线和垂直于第一轴线的第二轴线限定的表面的基板; 以及设置在基板上的电容器结构。 电容器结构包括第一导电元件; 对称地配置在第一导电部件的相对侧上的第二导电部件和第三导电部件。 第一，第二和第三导电部件通过相应的介电材料彼此分离。