公开(公告)号：US20170229290A1

公开(公告)日：2017-08-10

申请号：US15072392

申请日：2016-03-17

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20160225581A1

公开(公告)日：2016-08-04

申请号：US15022436

申请日：2014-10-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takashi KUBO ,  Hiroyuki KOBAYASHI

IPC: H01J37/22 ,  H01J37/10 ,  H01J37/26

CPC classification number: H01J37/222 ,  H01J37/10 ,  H01J37/22 ,  H01J37/261 ,  H01J37/263 ,  H01J2237/045 ,  H01J2237/103 ,  H01J2237/221 ,  H01J2237/248 ,  H01J2237/2602

Abstract: To improve the workability of the task of adjusting the position of a limit field diaphragm. An electron microscope provided with an image-capturing means for capturing an image of an observation visual field prior to insertion of a limit field diaphragm as a map image, a recording means for recording the map image, an extraction means for capturing an image of the observation visual field after insertion of the limit field diaphragm and extracting the outline of the diaphragm, a drawing means for drawing the outline on the map image, and a display means for displaying the image drawn by the drawing means.

Abstract translation: 提高调节极限场隔膜位置任务的可操作性。 一种具有图像捕获装置的电子显微镜，其用于在作为地图图像的极限场光阑插入之前捕获观察视野的图像，用于记录地图图像的记录装置，用于拍摄图像的图像的提取装置 插入极限视场光阑并提取光阑的轮廓之后的观察视野，用于在地图图像上绘制轮廓的绘图装置，以及显示由绘图装置绘制的图像的显示装置。

公开(公告)号：US20180090345A1

公开(公告)日：2018-03-29

申请号：US15468259

申请日：2017-03-24

Applicant: Hitachi High-Technologies Corporation

Inventor： Yutaka KOUZUMA ,  Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kenetsu YOKOGAWA ,  Tomoyuki WATANABE

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/3211 ,  H01J37/32724 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/67115

Abstract: A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.

公开(公告)号：US20180076051A1

公开(公告)日：2018-03-15

申请号：US15698823

申请日：2017-09-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazunori SHINODA ,  Satoshi SAKAI ,  Masaru IZAWA ,  Nobuya MIYOSHI ,  Hiroyuki KOBAYASHI ,  Yutaka KOUZUMA ,  Kenji ISHIKAWA ,  Masaru HORI

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32136 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67115 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method for etching a titanium nitride film includes a first process of supplying reactive species, which include hydrogen and fluorine, to a base material including a titanium nitride film on at least a part of a surface, and a second process of vacuum-heating the base material to remove the surface reaction layer that is generated on the surface of the titanium nitride film in the first process.

公开(公告)号：US20160079043A1

公开(公告)日：2016-03-17

申请号：US14851996

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Tomoyuki TAMURA ,  Masaki ISHIGURO ,  Shigeru SHIRAYONE ,  Kazuyuki IKENAGA ,  Makoto NAWATA

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32577 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

Abstract: A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped.

Abstract translation: 等离子体处理装置包括在形成等离子体的处理室中的台，待处理的晶片和布置在台的上部的电极，并且供电以将晶片静电吸引并保持在平台上，并且连续地 一个接一个地处理多个晶片。 存在在不同条件下进行使用等离子体的处理的多个处理步骤，并且在处理步骤之间停止形成等离子体时存在多个时段。 在开始处理任何晶片之前涂覆处理室的内壁，并且在停止等离子体的形成期间的每个时间段期间，根据在处理室中漂浮并带电的颗粒的各自的极性的平衡来改变提供给电极的电压 。

公开(公告)号：US20140231015A1

公开(公告)日：2014-08-21

申请号：US14262466

申请日：2014-04-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Masaru IZAWA ,  Tadamitsu KANEKIYO

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract translation: 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。