公开(公告)号：US20050263754A1

公开(公告)日：2005-12-01

申请号：US10953867

申请日：2004-09-30

申请人： Jun Komiyama ,  Yoshihisa Abe ,  Shuniti Suzuki ,  Hideo Nakanishi ,  Toru Kita

发明人： Jun Komiyama ,  Yoshihisa Abe ,  Shuniti Suzuki ,  Hideo Nakanishi ,  Toru Kita

IPC分类号： H01L21/22 ,  C30B25/02 ,  C30B29/06 ,  C30B29/10 ,  C30B29/40 ,  H01L21/20 ,  H01L23/58 ,  H01L29/08

CPC分类号： C30B25/02 ,  C30B29/06 ,  C30B29/10 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02529 ,  H01L21/02543 ,  H01L21/0262 ,  H01L21/02667

摘要： In a substrate for growth of a chemical compound semiconductor, at least on one surface of a Si single crystal substrate 2 with a thickness of 300 μm, a porous Si single crystal 4 is formed. Pores of the porous Si single crystal 4 is opened outward. The surface of the porous Si single crystal 4 is covered by a 3C—SiC single crystal layer 3 with a thickness of 1 nm. The thickness of the porous Si single crystal 4 is, for example, 10 μm.

摘要翻译： 在用于生长化学化合物半导体的衬底中，至少在厚度为300μm的Si单晶衬底2的一个表面上形成多孔Si单晶4。 多孔Si单晶4的孔向外侧开口。 多孔Si单晶4的表面被厚度为1nm的3C-SiC单晶层3覆盖。 多孔Si单晶4的厚度例如为10μm。

公开(公告)号：US20050238278A1

公开(公告)日：2005-10-27

申请号：US10515175

申请日：2003-05-27

申请人： Tooru Nakashiba ,  Kouhei Kotera ,  Tomoaki Matsushima ,  Yukio Matsushita ,  Hideo Nakanishi ,  Shinji Hashimoto ,  Tomoaki Nemoto ,  Hiroyuki Yagyu ,  Yuuki Kasai

发明人： Tooru Nakashiba ,  Kouhei Kotera ,  Tomoaki Matsushima ,  Yukio Matsushita ,  Hideo Nakanishi ,  Shinji Hashimoto ,  Tomoaki Nemoto ,  Hiroyuki Yagyu ,  Yuuki Kasai

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/138 ,  G02B6/42 ,  G02B6/43 ,  H05K1/02 ,  H05K3/38 ,  H05K3/46

CPC分类号： G02B6/43 ,  B32B15/08 ,  G02B6/12004 ,  G02B6/13 ,  G02B6/138 ,  H05K1/0274 ,  H05K3/386 ,  H05K3/4652 ,  H05K2201/0108 ,  H05K2201/0195 ,  Y10T428/24942

摘要： A material for an optical circuit-electrical circuit mixedly mounting substrate comprises a light permeable resin layer, and an optical circuit forming layer that is made of a light permeable resin of which refractive index increases (or decreases) when irradiated with an activating energy beam and is disposed adjacent to the light permeable resin layer, wherein a refractive index of a portion of the optical circuit forming layer is higher (or lower) than that of the light permeable resin layer when the material for the optical circuit-electrical circuit mixedly mounting substrate is irradiated with an activating energy beam so that said portion is irradiated.

摘要翻译： 用于光电路电路混合安装衬底的材料包括透光树脂层和由活化能量束照射时折射率增加（或降低）的透光树脂制成的光电路形成层， 配置在与透光性树脂层相邻的位置，其中，当光电路电路的材料混合安装基板时，光电路形成层的一部分的折射率比透光性树脂层的折射率高（或更低） 用激活能量束照射，使得所述部分被照射。

公开(公告)号：US6019837A

公开(公告)日：2000-02-01

申请号：US978282

申请日：1997-11-25

申请人： Susumu Maeda ,  Keisei Abe ,  Kazutaka Terashima ,  Hideo Nakanishi

发明人： Susumu Maeda ,  Keisei Abe ,  Kazutaka Terashima ,  Hideo Nakanishi

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/20 ,  Y10S117/917

摘要： A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

摘要翻译： 温度传感器42设置在炉11中，测量放置在坩埚12中的熔融液体24上方的温度，以检查从熔融液体24的自由表面44蒸发的氧的蒸发程序。从数据中，考虑到关系 随着氧气溶解在坩埚12中，可以发现熔融液体24中的氧浓度，并且可以计算出从熔融液体24中提取的单个硅晶体40中的氧气量。

公开(公告)号：US6004393A

公开(公告)日：1999-12-21

申请号：US235637

申请日：1999-01-22

申请人： Susumu Maeda ,  Keisei Abe ,  Kazutaka Terashima ,  Hideo Nakanishi

发明人： Susumu Maeda ,  Keisei Abe ,  Kazutaka Terashima ,  Hideo Nakanishi

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B35/00

CPC分类号： C30B29/06 ,  C30B15/20 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1032

摘要： A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

公开(公告)号：US20140329569A1

公开(公告)日：2014-11-06

申请号：US14116305

申请日：2012-05-11

申请人： Hironori Kikuchi ,  Hideo Nakanishi ,  Shingo Sumi ,  Yoshihiro Kanasaki ,  Yuichiro Suzuki

发明人： Hironori Kikuchi ,  Hideo Nakanishi ,  Shingo Sumi ,  Yoshihiro Kanasaki ,  Yuichiro Suzuki

IPC分类号： H04B1/38

CPC分类号： H04B1/3838 ,  H01Q1/243 ,  H01Q1/245 ,  H01Q1/52 ,  H01Q9/42

摘要： Provided is a portable wireless device (100) including: a circuit board (130); an input unit wiring pattern (140) comprising a flexible substrate that is separate from the circuit board (130); and an antenna element (160) of which a power feed unit (162) is connected to the substrate edge (130a) of the circuit board (130). A vertical wiring unit (142) is wired perpendicularly to the antenna element (160). A first cutoff circuit (171) is installed between the vertical wiring unit (142) and a horizontal wiring unit (143), and cuts off the wiring at a high frequency. The horizontal wiring unit (143) is connected to the circuit board (130) with a connector (150) disposed in the vicinity of the power feed unit (162) therebetween.

摘要翻译： 提供一种便携式无线设备（100），包括：电路板（130）; 输入单元布线图案（140），包括与所述电路板（130）分离的柔性基板; 以及天线元件（160），其中馈电单元（162）连接到电路板（130）的基板边缘（130a）。 垂直配线单元（142）垂直于天线元件（160）布线。 第一截止电路（171）安装在垂直布线单元（142）和水平布线单元（143）之间，并且高频地切断布线。 水平布线单元143与电路板130连接，其间设置有位于供电单元162附近的连接器150。

公开(公告)号：US07876271B2

公开(公告)日：2011-01-25

申请号：US11816913

申请日：2006-02-23

申请人： Hideo Nakanishi ,  Takashi Aoki

发明人： Hideo Nakanishi ,  Takashi Aoki

IPC分类号： H01Q1/24

CPC分类号： H01Q9/40 ,  H01Q1/243 ,  H01Q5/321

摘要： In a portable radio apparatus, the antenna performance is improved while fitting conductor elements into an inside of a case without an increase in size of the case when two cases are closed. A monopole antenna arranged in an inside of a first case of a portable radio apparatus includes an element 11 on the power feed side, an element 12 on the open end side, and a resonance circuit 13. A width of the element 12 on the open end side, which comes close to an electronic parts 10 arranged in an inside of a second case and containing a metal in a folded mode, is set smaller than a width of the element 11 on the power feed side, which does not come close to the electronic parts 10.

摘要翻译： 在便携式无线电设备中，当两个壳体关闭时，将导体元件装配到壳体内部而不增加壳体尺寸的情况下，天线性能得到改善。 布置在便携式无线电设备的第一壳体的内部的单极天线包括在馈电侧的元件11，开放端侧的元件12和谐振电路13.元件12的开口宽度 靠近布置在第二壳体的内部并且包含折叠模式的金属的电子部件10的端侧被设定为小于馈电侧的元件11的宽度，其不接近 电子部件10。

公开(公告)号：US20090176045A1

公开(公告)日：2009-07-09

申请号：US12158710

申请日：2006-12-22

申请人： Kentarou Kanae ,  Hideo Nakanishi ,  Minoru Tanaka

发明人： Kentarou Kanae ,  Hideo Nakanishi ,  Minoru Tanaka

IPC分类号： B32B27/08 ,  B32B27/32 ,  B29C69/02 ,  B32B1/00

CPC分类号： C08L23/16 ,  B29C44/04 ,  B29C45/14 ,  B29C65/8207 ,  B29C65/8215 ,  B29C65/8223 ,  B29C66/30326 ,  B29C66/5223 ,  B29C66/52231 ,  B29C66/5263 ,  B29C66/52631 ,  B29C66/71 ,  B29C66/727 ,  B29C66/73151 ,  B29C66/73921 ,  B29K2021/00 ,  B29K2021/003 ,  B29K2023/00 ,  B29K2023/08 ,  B29K2101/12 ,  B29K2105/04 ,  B29K2995/007 ,  B29L2031/26 ,  B60R13/06 ,  C08L23/02 ,  C08L23/08 ,  C08L23/0815 ,  C08L23/10 ,  C08L23/20 ,  C08L91/08 ,  C08L2666/06 ,  C08L2666/08 ,  C08L2666/02 ,  B29C65/00 ,  B29K2083/00 ,  B29K2077/00 ,  B29K2075/00 ,  B29K2071/02 ,  B29K2071/00 ,  B29K2069/00 ,  B29K2067/003 ,  B29K2067/00 ,  B29K2055/02 ,  B29K2033/08 ,  B29K2029/04 ,  B29K2027/12 ,  B29K2027/08 ,  B29K2027/06 ,  B29K2025/08 ,  B29K2025/06 ,  B29K2023/22 ,  B29K2023/18 ,  B29K2023/12 ,  B29K2023/083 ,  B29K2023/06 ,  B29K2019/00 ,  B29K2009/00 ,  B29K2007/00

摘要： A molded composite comprising a first molded part 11 and a second molded part 12 which is bonded to the surface and/or a cross-sectional surface of the first molded part 11 is disclosed. The first molded part 11 is obtained by extrusion foam molding of an olefin thermoplastic elastomer composition, comprising (A) an ethylene-α-olefin copolymer rubber having an intrinsic viscosity [η] of 3.5 to 6.8 dl/g as measured at 135° C. in a decalin solvent, (B) a polyolefin resin, and (C) a mineral oil-based softener in a predetermined proportion and obtained by dynamically heat-treating a mixture of at least (A) the ethylene-α-olefin copolymer rubber and (B) the polyolefin resin in the presence of a cross-linking agent, at an expansion ratio of 1.2 times or more and the second molded part 12 is obtained by injection molding of the olefin thermoplastic elastomer composition and/or another thermoplastic elastomer composition and bonded to the surface and/or a cross-sectional surface of the first molded part 11.

摘要翻译： 公开了一种模制复合材料，其包括结合到第一模制部件11的表面和/或横截面的第一模制部件11和第二模制部件12。 第一成型部件11通过烯烃热塑性弹性体组合物的挤出成型而获得，该组合物包含（A）在135℃下测定的特性粘度η为3.5〜6.8dl / g的乙烯-α-烯烃共聚物橡胶 （B）聚烯烃树脂和（C）预定比例的矿物油基软化剂，通过动态热处理至少（A）乙烯-α-烯烃共聚物橡胶（A）的混合物而获得， 和（B）聚烯烃树脂，在交联剂存在下，发泡倍率为1.2倍以上，第二成型体12通过注射成型烯烃热塑性弹性体组合物和/或其它热塑性弹性体组合物 并且结合到第一模制部件11的表面和/或横截面。

公开(公告)号：US20080224268A1

公开(公告)日：2008-09-18

申请号：US12040020

申请日：2008-02-29

申请人： Yoshihisa Abe ,  Jun Komiyama ,  Shunichi Suzuki ,  Akira Yoshida ,  Hideo Nakanishi

发明人： Yoshihisa Abe ,  Jun Komiyama ,  Shunichi Suzuki ,  Akira Yoshida ,  Hideo Nakanishi

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/267 ,  H01L33/007 ,  H01S2304/04

摘要： To provide a nitride semiconductor single crystal substrate comprising a Si substrate and a nitride semiconductor film which has semi-polar (10-1m) plane (m: natural number) and a thickness of 1 μm or more, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, the nitride semiconductor single crystal substrate being suitably used for a light-emitting device, this invention provides a nitride semiconductor single crystal substrate comprising a Si substrate having an off-cut angle of 1 to 35° in the direction from the direction, a buffer layer 2a (2b) made of at least one of SiC or BP formed on the Si substrate, a AlN buffer layer formed on the buffer layers, and a nitride semiconductor single crystal film formed on the AlN buffer layer, the nitride semiconductor single crystal film comprising any one of GaN (10-1m), AlN (10-1m), InN (10-1m) or a GaN (10-1m)/and AlN (10-1m) superlattice film.

摘要翻译： 为了提供一种氮化物半导体单晶衬底，其包括Si衬底和具有半极性（10-1m）面（m：自然数）和1μm以上的厚度的氮化物半导体膜，氮化物半导体单晶衬底为 适合用于发光器件的氮化物半导体单晶衬底适合用于发光器件，本发明提供了一种氮化物半导体单晶衬底，其包括具有1至35°的截止角的Si衬底 从<100>方向的<110>方向，由在Si衬底上形成的SiC或BP中的至少一种制成的缓冲层2a（2b），形成在缓冲层上的AlN缓冲层，以及氮化物半导体 形成在AlN缓冲层上的单晶膜，包含GaN（10-1m），AlN（10-1m），InN（10-1m）或GaN（10-1m）中的任一种的氮化物半导体单晶膜和/ AlN（10-1m）超晶格膜。

公开(公告)号：US20080113168A1

公开(公告)日：2008-05-15

申请号：US11957121

申请日：2007-12-14

申请人： Tooru Nakashiba ,  Kouhei Kotera ,  Tomoaki Matsushima ,  Yukio Matsushita ,  Hideo Nakanishi ,  Shinji Hashimoto ,  Tomoaki Nemoto ,  Hiroyuki Yagyu ,  Yuuki Kasai

发明人： Tooru Nakashiba ,  Kouhei Kotera ,  Tomoaki Matsushima ,  Yukio Matsushita ,  Hideo Nakanishi ,  Shinji Hashimoto ,  Tomoaki Nemoto ,  Hiroyuki Yagyu ,  Yuuki Kasai

IPC分类号： B32B7/02

CPC分类号： G02B6/43 ,  B32B15/08 ,  G02B6/12004 ,  G02B6/13 ,  G02B6/138 ,  H05K1/0274 ,  H05K3/386 ,  H05K3/4652 ,  H05K2201/0108 ,  H05K2201/0195 ,  Y10T428/24942

摘要： A material for an optical circuit-electrical circuit mixedly mounting substrate comprises a light permeable resin layer, and an optical circuit forming layer that is made of a light permeable resin of which refractive index increases (or decreases) when irradiated with an activating energy beam and is disposed adjacent to the light permeable resin layer, wherein a refractive index of a portion of the optical circuit forming layer is higher (or lower) than that of the light permeable resin layer when the material for the optical circuit-electrical circuit mixedly mounting substrate is irradiated with an activating energy beam so that said portion is irradiated.

摘要翻译： 用于光电路电路混合安装衬底的材料包括透光树脂层和由活化能量束照射时折射率增加（或降低）的透光树脂制成的光电路形成层， 配置在与透光性树脂层相邻的位置，其中，当光电路电路的材料混合安装基板时，光电路形成层的一部分的折射率比透光性树脂层的折射率高（或更低） 用激活能量束照射，使得所述部分被照射。

公开(公告)号：US20070210304A1

公开(公告)日：2007-09-13

申请号：US11714259

申请日：2007-03-06

申请人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

发明人： Jun Komiyama ,  Yoshihisa Abe ,  Shunichi Suzuki ,  Hideo Nakanishi

IPC分类号： H01L29/08

CPC分类号： H01L29/267 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1608 ,  H01L29/2003

摘要： The present invention provides a nitride semiconductor single crystal including gallium nitride (GaN) or aluminum nitride (AlN) which are formed as a film to have good crystallinity without forming a 3C—SiC layer on a Si substrate, and which can be used suitably for a light emitting diode, a laser light emitting element, an electronic element that can be operated at a high speed and a high temperature, etc., as well as a high frequency device.A GaN (0001) or AlN (0001) single crystal film, or a super-lattice structure of GaN (0001) and AlN (0001) is formed on a Si (110) substrate via a 2H—AlN buffer layer.

摘要翻译： 本发明提供了一种氮化物半导体单晶，其包括氮化镓（GaN）或氮化铝（AlN），其形成为具有良好结晶性而不在Si衬底上形成3C-SiC层的膜，并且可以适用于 发光二极管，激光发光元件，可以高速，高温等操作的电子元件以及高频器件。 通过2H-AlN缓冲层在Si（110）衬底上形成GaN（0001）或AlN（0001）单晶膜或GaN（0001）和AlN（0001）的超晶格结构。