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公开(公告)号：US09965844B1
公开(公告)日：2018-05-08
申请号：US15250184
申请日：2016-08-29
Applicant: Hermes Microvision, Inc.
Inventor： Wei Fang , Zhao-Li Zhang , Jack Jau
CPC classification number: G06T7/0004 , G06K9/4671 , G06T2207/10061 , G06T2207/30148
Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.
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公开(公告)号：US09541824B1
公开(公告)日：2017-01-10
申请号：US14268213
申请日：2014-05-02
Applicant: HERMES MICROVISION, INC.
IPC: G03F1/84 , G06T7/00 , G01N23/225 , H05K1/00 , G03F1/00 , G01N21/956
CPC classification number: G03F1/84 , G01N21/9501 , G01N21/95607 , G01N23/2251 , G03F1/144 , G03F1/86 , G03F7/7065 , G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/30141 , G06T2207/30148 , H05K1/00
Abstract: A method and system for inspecting defects saves scanned raw data as an original image so as to save time for repeated scanning and achieve faster defect inspection and lower false rate by reviewing suspicious defects and other regions of interest in the original image by using the same or different image-processing algorithm with the same or different parameters.
Abstract translation: 用于检查缺陷的方法和系统将扫描的原始数据保存为原始图像，从而节省重复扫描的时间，并通过使用相同的方式检查原始图像中的可疑缺陷和其他感兴趣的区域，从而实现更快的缺陷检查和降低错误率 不同的图像处理算法具有相同或不同的参数。
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公开(公告)号：US20160247660A1
公开(公告)日：2016-08-25
申请号：US15049524
申请日：2016-02-22
Applicant: Hermes Microvision Inc.
CPC classification number: H01J37/20 , H01J37/06 , H01J37/222 , H01J37/3045 , H01J2237/202 , H01J2237/2826 , H01L22/12
Abstract: A calibration method for calibrating the position error in the point of interest induced from the stage of the defect inspection tool is achieved by controlling the deflectors directly. The position error in the point of interest is obtained from the design layout database.
Abstract translation: 通过直接控制偏转器来实现校准从缺陷检查工具的阶段引起的感兴趣点的位置误差的校准方法。 感兴趣点的位置误差是从设计布局数据库获得的。
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14.发明授权Dynamic focus adjustment with optical height detection apparatus in electron beam system 有权电子束系统中光学高度检测装置的动态聚焦调整公开(公告)号：US09400176B2
公开(公告)日：2016-07-26
申请号：US14306298
申请日：2014-06-17
Applicant: Hermes Microvision, Inc.
Inventor： Joe Wang , Van-Duc Nguyen , Yi-Xiang Wang , Jack Jau , Zhong-Wei Chen
CPC classification number: G01B11/22 , G01N23/04 , G01N23/20058 , G01N2223/32 , G01N2223/3301 , G01N2223/3302 , G01N2223/646 , H01J37/21 , H01J37/28 , H01J2237/216 , H01J2237/2482 , H01J2237/2487
Abstract: The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus.
Abstract translation: 本发明一般涉及图像系统的动态聚焦调整。 本发明借助于高度检测子系统，提供了一种用于通过改变物镜和样品台之间的静电透镜的场强/或偏置电压来根据样本表面高度变化来微调整图像聚焦的装置和方法 应用于样品表面。 仅作为示例，本发明已经应用于扫描电子检查系统。 但是应当认识到，本发明可以应用于使用带有带电粒子束的其它系统作为具有高度检测装置的观察工具。
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公开(公告)号：US09362087B2
公开(公告)日：2016-06-07
申请号：US14560845
申请日：2014-12-04
Applicant: Hermes Microvision Inc.
Inventor： Zhongwei Chen , Jack Jau , Weiming Ren
IPC: H01J37/26 , H01J37/28 , H01J37/10 , H01J37/14 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/02 , H01J37/285 , H01J37/29
CPC classification number: H01J37/28 , H01J37/026 , H01J37/10 , H01J37/14 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/261 , H01J37/285 , H01J37/292 , H01J2237/04926 , H01J2237/1405 , H01J2237/24475 , H01J2237/24495 , H01J2237/24528 , H01J2237/2801 , H01J2237/2804 , H01J2237/2806 , H01J2237/2814
Abstract: The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.
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Patent Agency Ranking
16.发明授权公开(公告)号：US09041795B2
公开(公告)日：2015-05-26
申请号：US13785222
申请日：2013-03-05
Applicant: HERMES MICROVISION INC.
CPC classification number: H04N7/18 , G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/20016 , G06T2207/30148 , H04N7/183
Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.
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公开(公告)号：US20140291510A1
公开(公告)日：2014-10-02
申请号：US14220358
申请日：2014-03-20
Applicant: Hermes-Microvision, Inc.
Inventor： Zhongwei Chen , Jack Jau , Weiming Ren
IPC: H01J37/26
CPC classification number: H01J37/28 , H01J37/026 , H01J37/10 , H01J37/14 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/261 , H01J37/285 , H01J37/292 , H01J2237/04926 , H01J2237/1405 , H01J2237/24475 , H01J2237/24495 , H01J2237/24528 , H01J2237/2801 , H01J2237/2804 , H01J2237/2806 , H01J2237/2814
Abstract: The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.
Abstract translation: 本发明提供了检查诸如晶片和掩模之类的样品表面上的小颗粒的装置。 这些装置通过形成暗场BSE图像提供高检测效率和高吞吐量。 这些装置可以通过同时形成SE图像和亮场BSE图像另外检查样品表面上的物理和电气缺陷。 这些装置可被设计成进行单光束或甚至多个单光束检查以实现高吞吐量。
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公开(公告)号：US10236156B2
公开(公告)日：2019-03-19
申请号：US15078369
申请日：2016-03-23
Applicant: Hermes Microvision Inc.
Inventor： Weiming Ren , Shuai Li , Xuedong Liu , Zhongwei Chen , Jack Jau
Abstract: A multi-beam apparatus for observing a sample with oblique illumination is proposed. In the apparatus, a new source-conversion unit changes a single electron source into a slant virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample with oblique illumination, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means not only forms the slant virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. The apparatus can provide dark-field images and/or bright-field images of the sample.
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19.发明授权公开(公告)号：US09282293B2
公开(公告)日：2016-03-08
申请号：US13785240
申请日：2013-03-05
Applicant: HERMES MICROVISION INC.
CPC classification number: H04N7/18 , G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/20016 , G06T2207/30148 , H04N7/183
Abstract: A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.
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公开(公告)号：US20150155133A1
公开(公告)日：2015-06-04
申请号：US14560845
申请日：2014-12-04
Applicant: Hermes Microvision Inc.
Inventor： Zhongwei Chen , Jack Jau , Weiming Ren
CPC classification number: H01J37/28 , H01J37/026 , H01J37/10 , H01J37/14 , H01J37/20 , H01J37/22 , H01J37/244 , H01J37/261 , H01J37/285 , H01J37/292 , H01J2237/04926 , H01J2237/1405 , H01J2237/24475 , H01J2237/24495 , H01J2237/24528 , H01J2237/2801 , H01J2237/2804 , H01J2237/2806 , H01J2237/2814
Abstract: The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.
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