公开(公告)号：US06472690B1

公开(公告)日：2002-10-29

申请号：US09677789

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US06229151B1

公开(公告)日：2001-05-08

申请号：US09162708

申请日：1998-09-29

申请人： Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Tetsuya Takeuchi ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333

摘要： An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.

摘要翻译： 一种具有多个GaN基半导体层的光半导体器件，其含有应变量子阱层，其中应变量子阱层具有取决于量子层生长时应变量子阱层的取向的压电场。 在本发明中，应变量子阱层以压电场小于压电场强度的最大值作为取向的方向生长。 在具有纤锌矿晶体结构的GaN基半导体层的器件中，应变量子阱层的生长方向从纤锌矿晶体结构的{0001}方向倾斜至少1°。 在具有锌辉石晶体结构的GaN基半导体层的器件中，应变量子阱层的生长取向从闪锌矿晶体结构的{111}方向倾斜至少1°。 在本发明的优选实施例中，选择生长方向以最小化应变量子阱层中的压电场。

公开(公告)号：US5278433A

公开(公告)日：1994-01-11

申请号：US926022

申请日：1992-08-07

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US4855249A

公开(公告)日：1989-08-08

申请号：US272081

申请日：1988-03-16

申请人： Isamu Akasaki ,  Nobuhiko Sawaki

发明人： Isamu Akasaki ,  Nobuhiko Sawaki

IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L33/16 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/0037 ,  Y10S117/913 ,  Y10S148/025 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/11 ,  Y10S148/113 ,  Y10S438/967

摘要： In organometallic vapor phase hetero-epitaxial processes for growing Al.sub.x Ga.sub.1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low temperatures in an atmosphere comprising Al-containing organometallic compound, NH.sub.3 and H.sub.2 gases, prior to the hetero epitaxial growth of Al.sub.x Ga.sub.1-x N films. Thus, single crystalline Al.sub.x Ga.sub.1-x N layers of high uniformity and high quality having smooth, flat surfaces are provided. Multi-layers grown according to the process of the invention are free from cracks and have preferable UV or blue light emission properties.

摘要翻译： 在用于在蓝宝石衬底上生长Al x Ga 1-x N膜的有机金属气相异质外延工艺中，在包含含Al有机金属的气氛中，在较低温度下对衬底进行短暂持续时间，例如小于2分钟的预热处理 化合物，NH3和H2I气体，在AlxGal-xN膜的异质外延生长之前。 因此，提供了具有光滑平坦表面的高均匀性和高质量的单晶Al x Ga 1-x N层。 根据本发明的方法生长的多层没有裂纹并且具有优选的UV或蓝色发光性质。

公开(公告)号：US08941136B2

公开(公告)日：2015-01-27

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/00 ,  H01L33/22 ,  H01L33/40

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

摘要翻译： 半导体发光元件包括：半导体堆叠部，其包括发光层，从发光层射出的光入射的衍射面，形成在比所述发光层的光波长长的时间内形成的凸部或凹部 光并且短于光的相干长度，其中衍射面根据布拉格的衍射条件以多模式反射入射光，并根据布拉格的衍射条件将入射光透射到多模中，并且反射面反射多模光 在衍射面衍射并使多模光再次入射到衍射面。 半导体堆叠部分形成在衍射面上。

公开(公告)号：US20120228656A1

公开(公告)日：2012-09-13

申请号：US13394543

申请日：2010-08-23

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki ,  Toshiyuki Kondo ,  Fumiharu Teramae ,  Tsukasa Kitano ,  Atsushi Suzuki

IPC分类号： H01L33/10 ,  H01L33/00

CPC分类号： H01L33/10 ,  H01L33/007 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0058

摘要： [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate.[MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.

摘要翻译： [问题]通过抑制半导体层和透明基板的反射来提高光提取效率。 解决方案包括发光层的半导体堆叠部分的半导体发光元件形成在基板的主表面上，从发光层发射的光入射到该凸部或凹部的衍射面 部分形成在比光的光波长长并且短于光的相干长度的周期中，形成在基板的主表面侧上，反射面反射在衍射面衍射的光，并使 在基板的背面侧形成有再次入射到衍射面的光。

公开(公告)号：US07756189B2

公开(公告)日：2010-07-13

申请号：US11897895

申请日：2007-08-31

申请人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Satoshi Kamiyama ,  Motoaki Iwaya ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： H01S3/08 ,  H01S5/00 ,  G01B9/02 ,  G01B11/02

CPC分类号： G03F7/70408 ,  G03F7/70025 ,  H01L33/22 ,  H01S3/082 ,  H01S3/109 ,  H01S3/2207

摘要： The present invention discloses a two-light flux interference exposure device comprising: a laser light source provided in a laser resonator; a single harmonic generation device provided in the laser resonator for converting laser light output by the laser light source to higher harmonics; an etalon provided in the laser resonator so as to serve as a narrowband wavelength filter; a beam splitter dividing laser light output outside the laser resonator into two light fluxes; and an interference optic system causing the light fluxes to interfere with each other on a target to be exposed.

摘要翻译： 本发明公开了一种双光束干涉曝光装置，包括：设置在激光谐振器中的激光光源; 设置在所述激光谐振器中的用于将由所述激光源输出的激光转换成高次谐波的单次谐波产生装置; 在激光谐振器中提供的标准具，用作窄带波长滤波器; 分束器将激光谐振器外部的激光输出分成两束光束; 以及使得光束在要暴露的目标上彼此干扰的干涉光学系统。

公开(公告)号：US20070008539A1

公开(公告)日：2007-01-11

申请号：US10550824

申请日：2004-03-23

申请人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

发明人： Akira Hirano ,  Satoshi Kamiyama ,  Hiroshi Amano ,  Isamu Akasaki

IPC分类号： G01N21/00 ,  G08B17/12

CPC分类号： G02B5/284

摘要： In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain InxAlyGa1-x-yN (0≦x≦0.21, 0≦y≦1).

摘要翻译： 为了提供能够延长长时间保持稳定的光学特性并且还提供使用滤光器装置的光传感器的滤光器装置，具有滤光器功能的光传感器包括具有彩色玻璃滤光器并被配置为允许透射的滤光器装置 包括检测目标波长范围的预定波长范围的光和用于接收透过过滤装置的光的光接收装置。 滤波器装置包括由彼此堆叠的多个透光层组成的第一干涉滤光器结构，第一干涉滤光器结构沉积在着色玻璃滤光片的表面上。 光接收装置包括具有一个或多个半导体层的半导体光电检测器结构，在半导体光电检测器结构内的一个或多个半导体层中形成有光接收区域。 形成半导体光电检测器结构的一个或多个半导体层包含In（x）Al（x，y） ，0 <= y <= 1）。

公开(公告)号：US20060145166A1

公开(公告)日：2006-07-06

申请号：US11365459

申请日：2006-02-28

申请人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

发明人： Isamu Akasaki ,  Hiroshi Amano ,  Satoshi Kamiyama ,  Takanori Yasuda ,  Toshiya Matsuda

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/2205 ,  H01L33/007

摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0

摘要翻译： 半导体装置包括由化学式XB 2 X表示的二硼化物单晶制成的基板，其中X包括Ti，Zr，Nb和Hf中的至少一种，形成在半导体缓冲层上的半导体缓冲层 该衬底的主表面由Al y Ga 1-y N（0

公开(公告)号：US06984536B2

公开(公告)日：2006-01-10

申请号：US10052347

申请日：2002-01-23

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L21/20

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层 低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。