公开(公告)号：USD505923S1

公开(公告)日：2005-06-07

申请号：US29193674

申请日：2003-11-13

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

设计人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

公开(公告)号：US06623560B2

公开(公告)日：2003-09-23

申请号：US09907215

申请日：2001-07-17

申请人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： C30B2504

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A crystal growth method includes forming a mask layer capable of impeding crystal growth on a substrate in such a way a first nitride semiconductor layer has irregularities at a surface thereof exposed at a window region opened at a part of the mask layer, and growing a second nitride semiconductor layer over a region including the surface of the mask layer through crystal growth from the irregularities. Through-type dislocations can be reliably prevented from propagation due to the discontinuity of crystals at the irregularities and also to lateral crystal growth.

公开(公告)号：USD472531S1

公开(公告)日：2003-04-01

申请号：US29162896

申请日：2002-06-25

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

设计人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

公开(公告)号：USD472529S1

公开(公告)日：2003-04-01

申请号：US29154047

申请日：2002-01-17

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

设计人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

公开(公告)号：US07695991B2

公开(公告)日：2010-04-13

申请号：US11463233

申请日：2006-08-08

申请人： Hiroyuki Okuyama ,  Goshi Biwa

发明人： Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/16

摘要： A method for manufacturing a GaN semiconductor light-emitting element is provided. The method for manufacturing a GaN semiconductor light-emitting element includes forming, by crystal growth, a first GaN compound semiconductor layer of a first conductivity type, the top face of which corresponds to the A plane, an active layer composed of InxGa(1−x)N, the top face of which corresponds to the A plane, and a second GaN compound semiconductor layer of a second conductivity type, the top face of which corresponds to the A plane, in that order on a base which is a nonpolar plane, wherein the active layer is formed at a crystal growth rate of 0.3 nm/sec or more.

摘要翻译： 提供一种制造GaN半导体发光元件的方法。 制造GaN半导体发光元件的方法包括通过晶体生长形成第一导电类型的第一GaN化合物半导体层，其顶面对应于A平面，由In x Ga（1- x）N，其顶面对应于A平面;以及第二导电类型的第二GaN化合物半导体层，其第二导电类型的顶表面相应于A平面，在基极上依次为非极性平面 其中，活性层以0.3nm / sec以上的晶体生长速度形成。

公开(公告)号：US20090242874A1

公开(公告)日：2009-10-01

申请号：US12432397

申请日：2009-04-29

申请人： Goshi Biwa ,  Hiroyuki Okuyama

发明人： Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/325 ,  H01L24/05 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15788 ,  H01L2924/181 ,  H04N9/3155 ,  H04N9/3164 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer.

摘要翻译： 提供了一种GaN基半导体发光器件。 发光器件包括n导电型的第一GaN基化合物半导体层; 活性层 第二GaN基化合物半导体层; 由GaN基化合物半导体构成的下层，下层设置在第一GaN基化合物半导体层和有源层之间; 以及由掺杂有p型掺杂剂的GaN基化合物半导体构成的超晶格层，所述超晶格层设置在所述有源层和所述第二GaN基化合物半导体层之间。

公开(公告)号：US20080050599A1

公开(公告)日：2008-02-28

申请号：US11976246

申请日：2007-10-23

申请人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

发明人： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC分类号： B32B9/04

CPC分类号： H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

公开(公告)号：US07250320B2

公开(公告)日：2007-07-31

申请号：US10512131

申请日：2004-02-19

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US20070037308A1

公开(公告)日：2007-02-15

申请号：US11463233

申请日：2006-08-08

申请人： Hiroyuki Okuyama ,  Goshi Biwa

发明人： Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/16

摘要： A method for manufacturing a GaN semiconductor light-emitting element is provided. The method for manufacturing a GaN semiconductor light-emitting element includes forming, by crystal growth, a first GaN compound semiconductor layer of a first conductivity type, the top face of which corresponds to the A plane, an active layer composed of InxGa(1−x)N, the top face of which corresponds to the A plane, and a second GaN compound semiconductor layer of a second conductivity type, the top face of which corresponds to the A plane, in that order on a base which is a nonpolar plane, wherein the active layer is formed at a crystal growth rate of 0.3 nm/sec or more.

摘要翻译： 提供一种制造GaN半导体发光元件的方法。 制造GaN半导体发光元件的方法包括通过晶体生长形成第一导电类型的第一GaN化合物半导体层，其第一GaN化合物半导体层的顶面对应于A平面，活性层由In < （1-x）N，其顶面对应于A平面;以及第二导电类型的第二GaN化合物半导体层，其顶面对应于 以等于或大于0.3nm /秒的晶体生长速率形成有源层的方式，以该非平面的方式依次形成A平面。

公开(公告)号：US07135348B2

公开(公告)日：2006-11-14

申请号：US10345625

申请日：2003-01-16

申请人： Hiroyuki Okuyama ,  Goshi Biwa

发明人： Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/44 ,  H01L31/0328

CPC分类号： H01L33/24

摘要： A semiconductor light emitting device is fabricated by forming a mask having an opening on a substrate, forming a crystal layer having a tilt crystal plane tilted from the principal plane of the substrate by selective growth from the opening of the mask, and forming, on the crystal layer, a first conductive type layer, an active layer, and a second conductive type layer, which extend within planes parallel to the tilt crystal plane, and removing the mask. The semiconductor light emitting device can be fabricated without increasing fabrication steps while suppressing threading dislocations extending from the substrate side and keeping a desirable crystallinity. The semiconductor light emitting device is also advantageous in that since deposition of polycrystal on the mask is eliminated, an electrode can be easily formed, and that the device structure can be finely cut into chips.