-
公开(公告)号：US06557237B1
公开(公告)日：2003-05-06
申请号：US09663814
申请日：2000-09-15
申请人： Donald J. K. Olgado
发明人： Donald J. K. Olgado
IPC分类号： H01S400
CPC分类号： H01L21/67167 , C25D7/123 , C25D17/001 , C25D17/004 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/6719 , H01L21/6723 , H05K3/241 , Y10T29/49002
摘要： The present invention relates to a method and apparatus for depositing metal on a substrate. More particularly, one embodiment of the metal deposition cell comprising a cell base, an anode, and a cell top. The cell base at least partially defines an interior recess. The anode mounted within the interior recess to the cell base. The cell top is removably mounted to the cell base. In one embodiment, a method of removing a modular metal deposition cell from a deposition cell mount is provided. The modular metal deposition cell comprises a cell top and a cell bottom. The method comprises: unfastening a fastener that secures the cell top to the cell bottom, and also fastens the cell top and the cell bottom to the deposition cell mount. The cell top or the cell bottom are then removed from the deposition cell mount.
摘要翻译： 本发明涉及一种在衬底上沉积金属的方法和装置。 更具体地，包括电池基底，阳极和电池顶部的金属沉积电池的一个实施例。 细胞基底至少部分地限定内部凹部。 阳极安装在内部凹槽内到达电池基座。 细胞顶部可拆卸地安装到细胞基底。 在一个实施例中，提供了从沉积电池座移除模块化金属沉积池的方法。 模块化金属沉积池包括电池顶部和电池底部。 该方法包括：松开将细胞顶部固定到细胞底部的紧固件，并且还将细胞顶部和细胞底部紧固到沉积细胞座。 然后将细胞顶部或细胞底部从沉积单元底座移除。
-
公开(公告)号：US06440261B1
公开(公告)日：2002-08-27
申请号：US09318233
申请日：1999-05-25
IPC分类号： H01L2100
CPC分类号： H01L21/67161 , H01L21/67167 , H01L21/67184 , Y10S414/135 , Y10S414/137 , Y10S414/139
摘要： Apparatus for multi-chambered semiconductor wafer processing comprising a polygonal structure having at least two semiconductor process chambers disposed on one side. An area between the process chambers provides a maintenance access to the semiconductor processing equipment. Additionally, the apparatus may be clustered or daisy-chained together to enable a wafer to access additional processing chambers without leaving the controlled environment of the semiconductor wafer processing equipment.
摘要翻译： 用于多室半导体晶片处理的装置，包括具有设置在一侧上的至少两个半导体处理室的多边形结构。 处理室之间的区域提供对半导体处理设备的维护访问。 另外，该装置可以被集群或菊花链连接在一起，以使得晶片能够访问附加的处理室而不会离开半导体晶片处理设备的受控环境。
-
13.发明授权公开(公告)号：US08399065B2
公开(公告)日：2013-03-19
申请号：US12862265
申请日：2010-08-24
申请人： Quanyuan Shang , Lu Yang , Karl M. Brown , Donald J. K. Olgado , Victor Pebenito , Hooman Bolandi , Tetsuya Ishikawa , Robert Z. Bachrach , Liang-Yuh Chen
发明人： Quanyuan Shang , Lu Yang , Karl M. Brown , Donald J. K. Olgado , Victor Pebenito , Hooman Bolandi , Tetsuya Ishikawa , Robert Z. Bachrach , Liang-Yuh Chen
CPC分类号： H01M4/0419 , H01M4/1391
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译： 提供一种用于形成薄膜电池的电化学层的方法和装置。 将包含分散在载运介质中的电化学活性前体颗粒的前体混合物提供到处理室，并使用也提供给室的可燃气体混合物进行热处理。 通过热能将前体转化成纳米晶体，并将纳米晶体沉积在基底上。 当第二前体沉积在表面上以增强粘附性和导电性时，可与纳米晶体共混。
-
公开(公告)号：US20100093263A1
公开(公告)日：2010-04-15
申请号：US12636326
申请日：2009-12-11
IPC分类号： B24B53/02
CPC分类号： B24B53/017 , B24B53/005 , B24B53/12
摘要： Apparatus and methods for conditioning a polishing pad include an arm adapted to support a conditioning disk; a drive mechanism coupled to the arm; and a flexible coupling between the drive mechanism and the conditioning disk adapted to allow the conditioning disk to tilt while transmitting rotary motion from the drive mechanism to the conditioning disk. Numerous other aspects are disclosed.
摘要翻译： 用于调理抛光垫的装置和方法包括适于支撑调节盘的臂; 联接到所述臂的驱动机构; 以及驱动机构和调节盘之间的柔性联接件，其适于允许调节盘在将驱动机构的旋转运动传递到调节盘的同时倾斜。 公开了许多其他方面。
-
公开(公告)号：US07137868B2
公开(公告)日：2006-11-21
申请号：US11369065
申请日：2006-03-06
申请人： Shou-Sung Chang , Stan D. Tsai , Donald J. K. Olgado , Liang-Yuh Chen , Alain Duboust , Ralph M. Wadensweiler
发明人： Shou-Sung Chang , Stan D. Tsai , Donald J. K. Olgado , Liang-Yuh Chen , Alain Duboust , Ralph M. Wadensweiler
CPC分类号： B24B37/22 , B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.
-
16.发明授权Apparatus and method for electro chemical plating using backside electrical contacts 失效使用背面电触点进行电化学镀的装置和方法公开(公告)号：US06802947B2
公开(公告)日：2004-10-12
申请号：US09981191
申请日：2001-10-16
IPC分类号： C25D1700
CPC分类号： C25D7/123 , C25D5/028 , C25D17/001 , C25D17/06 , H01L21/2885
摘要： An apparatus and method for securing and electrically contacting a substrate on a non-production surface of the substrate. The apparatus includes a substrate holder assembly having a substrate engaging surface formed thereon, the substrate engaging surface being configured to engage a substrate on the non-production surface. The apparatus further includes an electrical contact device positioned on the substrate engaging surface, the electrical contact device including a plurality of radially spaced electrically conductive members configured to electrically communicate with the non-production surface of the substrate positioned on the substrate engaging surface. The method includes depositing a conductive seed layer on a production surface of the substrate, and depositing a backside conductive layer on a portion of the non-production side of the substrate, the backside conductive layer extending around a bevel of the substrate to electrically communicate with the seed layer. The method further includes securing the substrate in a chuck configured to engage the non-production surface of the substrate, contacting the backside conductive layer with an electrical cathode contact on the non-production side of the substrate, and plating over the conductive seed layer via application of an electrolyte to the production surface of the substrate and applying an electrical bias to the electrical cathode contact and an anode in communication with the electrolyte.
摘要翻译： 一种用于固定和电接触衬底的非生产表面上的衬底的装置和方法。 该设备包括具有形成在其上的衬底接合表面的衬底保持器组件，衬底接合表面被配置为接合非生产表面上的衬底。 所述装置还包括位于所述基板接合表面上的电接触装置，所述电接触装置包括多个径向隔开的导电构件，所述导电构件构造成与位于所述基板接合表面上的所述基板的非生产表面电连通。 该方法包括在衬底的生产表面上沉积导电种子层，以及在衬底的非生产侧的一部分上沉积背面导电层，所述背面导电层围绕衬底的斜面延伸以与 种子层。 该方法还包括将衬底固定在配置成接合衬底的非生产表面的卡盘中，使背面导电层与衬底的非生产侧上的电阴极接触接触，并且在导电种子层上电镀 将电解质施加到基材的生产表面上，并将电偏压施加到电阴极接触件和与电解质连通的阳极。
-
公开(公告)号：US06689418B2
公开(公告)日：2004-02-10
申请号：US09922130
申请日：2001-08-03
IPC分类号： B05D312
CPC分类号： H01L21/68728 , B08B3/048 , C11D7/08 , C11D7/265 , C11D11/0047 , H01L21/67057
摘要： An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed. The method includes plating the copper layer over the front side of the substrate in a plating device and then transferring the substrate from the plating device to rinsing and cleaning station. At the rinsing and cleaning station, the substrate is dropped front side down onto a pool of rinsing liquid so that the surface tension of the liquid holds the substrate in suspension thereby preventing the backside of said substrate from sinking under an upper surface of the pool and then, while the substrate is suspended in the pool, it is secured with a first set of fingers.
摘要翻译： 一种用于冲洗双面基板的一侧并从基板的边缘和/或背面去除不想要的材料的装置和方法。 该方法的一个实施例涉及冲洗和清洁具有正面的衬底，集成电路将在其上形成背面。 该实施例包括将衬底正面朝下放置到冲洗液池上，使得衬底的前侧与溶液接触，同时衬底被溶液的表面张力保持悬浮，从而防止了 衬底的背面从池的上表面下沉。 接下来，当衬底在所述漂洗液体中悬浮时，衬底通过其边缘用第一组手指固定，并且在一些实施例中，衬底随后被旋转。 在另一实施例中，公开了一种在衬底前侧形成铜层的方法。 该方法包括在电镀装置中在基板的正面上电镀铜层，然后将基板从电镀装置转移到冲洗和清洗台。 在冲洗和清洁站处，基板被正面向下落到冲洗液池上，使得液体的表面张力将基板保持在悬浮状态，从而防止所述基板的背面沉入池的上表面，并且 然后，当衬底悬挂在池中时，其用第一组手指固定。
-
公开(公告)号：US06478937B2
公开(公告)日：2002-11-12
申请号：US09765855
申请日：2001-01-19
IPC分类号： B23H726
CPC分类号： C25D5/04 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/06
摘要： An apparatus and associated method that removes electrolyte solution from a substrate, the apparatus comprises a thrust plate and a substrate extension unit. The thrust plate at least partially defines a spin recess. The substrate extension unit can be displaced between a retracted position and an extended position relative to the spin recess. The substrate extension unit is disposed within the spin recess when positioned in the retracted position. The substrate extension unit at least partially extends from within the spin recess when positioned in the extended position. The substrate is processed by immersing at least a portion of the substrate in a wet solution. The substrate is removed from the wet solution. The substrate extension unit extends into its extended position, and the substrate is spun. Extending the substrate extension unit limits the formation of fluid traps within the substrate holder assembly or between the substrate and the substrate holder assembly.
-
19.发明申请METHOD AND APPARATUS UTILIZING A SINGLE LIFT MECHANISM FOR PROCESSING AND TRANSFER OF SUBSTRATES 审中-公开使用单个提升机械的方法和装置，用于处理和转移基板公开(公告)号：US20120234243A1
公开(公告)日：2012-09-20
申请号：US13413744
申请日：2012-03-07
IPC分类号： C23C16/458 , H01L21/00
CPC分类号： H01L21/67115 , C23C16/4584 , C23C16/54 , H01L21/68742
摘要： Embodiments of the present invention relate to apparatus and methods for loading substrates into processing chambers, processing the substrates in the processing chamber, and transferring the substrates out of the processing chamber using a single lift and rotational mechanism. One embodiment of the present invention provides a method for processing one or more substrates. The method includes transferring a substrate carrier, having one or more substrates disposed thereon, to a chamber volume, supporting the substrate carrier within the chamber volume using a set of lift pins, transferring the substrate carrier from the set of lift pins to an edge ring within the chamber volume, and contacting the edge ring with the set of lift pins to control the position of the substrate carrier within the chamber volume.
摘要翻译： 本发明的实施例涉及将基板装载到处理室中的装置和方法，处理处理室中的基板，以及使用单个提升和旋转机构将基板转移到处理室之外。 本发明的一个实施例提供了一种用于处理一个或多个基底的方法。 该方法包括将其上设置有一个或多个衬底的衬底载体转移到室体积，使用一组提升销将衬底载体支撑在室体内，将衬垫载体从该组提升销传送到边缘环 并且使边缘环与该组提升销接触，以控制基板载体在室容积内的位置。
-
公开(公告)号：US07138014B2
公开(公告)日：2006-11-21
申请号：US10059572
申请日：2002-01-28
申请人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
发明人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
-
-
-
-
-
-
-
-
-
搜索结果
35 条记录 (耗时 0.038 秒)