Abstract:
A ceramic substrate component suitable for high-power chips includes a ceramic substrate body and at least one raised metal pad. The ceramic substrate body has an upper surface and a lower surface opposite to the upper surface. The raised metal pad includes a base portion and a top layer. The base portion, which is attached to the upper surface of the ceramic substrate body, has a thickness between 10 and 300 micrometers, and a thermal expansion coefficient greater than the ceramic substrate body. The top layer is formed on the base portion and adapted to install a high-power chip thereon. The top layer extends an area less than the base portion but greater than the high-power chip, and has a thermal expansion coefficient greater than the ceramic substrate body. As such, damages due to thermal stress occurring between the base portion and the ceramic substrate body can be mitigated.
Abstract:
A ceramic substrate component suitable for high-power chips includes a ceramic substrate body and at least one raised metal pad. The ceramic substrate body has an upper surface and a lower surface opposite to the upper surface. The raised metal pad includes a base portion and a top layer. The base portion, which is attached to the upper surface of the ceramic substrate body, has a thickness between 10 and 300 micrometers, and a thermal expansion coefficient greater than the ceramic substrate body. The top layer is formed on the base portion and adapted to install a high-power chip thereon. The top layer extends an area less than the base portion but greater than the high-power chip, and has a thermal expansion coefficient greater than the ceramic substrate body. As such, damages due to thermal stress occurring between the base portion and the ceramic substrate body can be mitigated.
Abstract:
A fabricating method of a semiconductor light emitting device includes disposing a plurality of non-conductive walls on a substrate. An alignment position is formed between every two adjacent non-conductive walls. A plurality of semiconductor light emitting units on a first carrier board are respectively aligned to the alignment positions. The semiconductor light emitting units are divided into a plurality of groups. The semiconductor light emitting units in one of the groups are dissociated from the first carrier board. Thus, the semiconductor light emitting units in the group fall into the corresponding alignment positions due to gravity. Each of the semiconductor light emitting units is electrically connected with the substrate through a first electrode. A conductive layer is formed on the semiconductor light emitting units. Accordingly, the semiconductor light emitting units are electrically connected together to the conductive layer through second electrodes.
Abstract:
A semiconductor light emitting device including a substrate, a plurality of semiconductor light emitting units and a plurality of non-conductive walls is provided. The semiconductor light emitting device is disposed on the substrate in an array. Each of the semiconductor light emitting units has a first electrode and a second electrode opposite to the first electrode. Each of the semiconductor light emitting units is electrically connected to the substrate through the first electrode, and the semiconductor light emitting units are electrically connected together to a conducting layer through the second electrodes. The semiconductor light emitting units have different emission colors. The non-conductive walls are disposed between adjacent semiconductor light emitting units, to separate the semiconductor light emitting units. A fabricating method of semiconductor light emitting device is also provided.
Abstract:
The disclosure relates to a stacked type power device module. May use the vertical conductive layer for coupling the stacked devices, the electrical transmission path may be shortened. Hence, current crowding or contact damages by employing the conductive vias or wire bonding may be alleviated.
Abstract:
Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.
Abstract:
An electronic device package structure including a substrate, a first circuit layer, a second circuit layer, an electronic device and an input/output device is provided. The first circuit layer includes a first conductive portion, a second conductive portion and a first curve portion located between the first conductive portion and the second conductive portion. At least a partial thickness of the first curve portion is greater than a thickness of the first conductive portion. The electronic device disposed on the second circuit layer is electrically connected to the second conductive portion of the first circuit layer. The input/output device disposed corresponding to the first conductive portion is electrically connected to the first conductive portion of the first circuit layer.
Abstract:
A chip package structure including first and second insulating layers, first and second circuit structures, a chip on the first circuit structure, an encapsulant, a conductive through via, and first and second heat dissipation layers is provided. The first circuit structure is disposed at the first surface of the first insulating layer. The bottom electrode of the chip is electrically connected to the first circuit structure. The second circuit structure is disposed on the chip and electrically connected to the top electrode of the chip. The encapsulant encapsulates the first and second circuit structures and the chip. The conductive through via is disposed in the encapsulant and connects the first and second circuit structures. The second insulating layer is disposed on the second circuit structure. The first heat dissipation layer is disposed on the first insulating layer. The second heat dissipation layer is disposed on the second insulating layer.
Abstract:
A package substrate includes a substrate, an insulating protective layer and an interposer. The substrate has a first surface and a second surface opposing to the first surface. The substrate includes a plurality of first conductive pads embedded in the first surface. The insulating protective layer is disposed on the first surface of the substrate. The insulating protective layer has an opening for exposing the first conductive pads embedded in the first surface of the substrate. The interposer has a top surface and a bottom surface opposing to the top surface. The interposer includes a plurality of conductive vias and a plurality of second conductive pads located on the bottom surface. The interposer is located in a recess defined by the opening of the insulating protective layer and the first surface of the substrate. Each of the second conductive pads is electrically connected to corresponding first conductive pad.
Abstract:
A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.