公开(公告)号：US20160031701A1

公开(公告)日：2016-02-04

申请号：US14448767

申请日：2014-07-31

Applicant: Infineon Technologies AG

Inventor： Ulrich Schmid ,  Tobias Frischmuth ,  Peter Irsigler ,  Thomas Grille ,  Daniel Maurer ,  Ursula Hedenig ,  Markus Kahn ,  Günter Denifl

IPC: B81B3/00 ,  H04R19/02 ,  B81C1/00 ,  H04R7/02 ,  H04R31/00 ,  B06B1/02 ,  H04R19/04

CPC classification number: B81B3/0021 ,  B06B1/02 ,  B81B3/007 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/051 ,  B81C1/00142 ,  B81C1/0015 ,  B81C1/00158 ,  B81C1/00373 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2201/019 ,  H04R7/02 ,  H04R7/24 ,  H04R19/005 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/023 ,  H04R2400/01 ,  H04R2499/11

Abstract: A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material.

Abstract translation: 微机械结构包括衬底和布置在衬底上的功能结构。 功能结构具有功能区域，其被配置为响应于作用在功能区域上的力而相对于衬底偏转。 该功能结构包括导电基底层和功能结构，该功能结构包括具有布置在导电基底层处并且仅在功能区域部分地覆盖导电基底层的加强结构材料的加强结构。 加强结构材料包括硅材料和至少一种碳材料。

公开(公告)号：US09212045B1

公开(公告)日：2015-12-15

申请号：US14448783

申请日：2014-07-31

Applicant: Infineon Technologies AG

Inventor： Ulrich Schmid ,  Tobias Frischmuth ,  Peter Irsigler ,  Thomas Grille ,  Daniel Maurer ,  Ursula Hedenig ,  Markus Kahn ,  Guenter Denifl

IPC: H01L29/66 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00658 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R19/005 ,  H04R31/00 ,  H04R2307/023

Abstract: A micro mechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure further includes a conductive base layer having a conductive base layer material. The conductive base layer material includes sectionally in a stiffening section a carbon material such that a carbon concentration of the carbon material in the conductive base layer material is at least 1014 per cubic cm and at least higher by a factor of 103 than in the conductive base layer material adjacent to the stiffening section.

Abstract translation: 微机械结构包括衬底和布置在衬底上的功能结构。 功能结构包括响应于作用在功能区上的力而相对于衬底可偏转的功能区域。 功能结构还包括具有导电性基底层材料的导电性基底层。 导电基层材料在硬化部分中包括碳材料，使得导电基材层材料中的碳材料的碳浓度至少为1014每立方厘米，并且至少高于导电基体中的103倍 邻近加强部分的层材料。

公开(公告)号：US11387081B2

公开(公告)日：2022-07-12

申请号：US16798445

申请日：2020-02-24

Applicant: Infineon Technologies AG

Inventor： Rudolf Kogler ,  Juergen Steinbrenner ,  Wolfgang Dastel ,  Harald Huetter ,  Markus Kahn

IPC: H01J37/32 ,  H01L21/687 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  H01L21/67 ,  C23C16/458

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

公开(公告)号：US20210287954A1

公开(公告)日：2021-09-16

申请号：US17333107

申请日：2021-05-28

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Oliver Humbel ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Christian Maier ,  Gerhard Schmidt ,  Juergen Steinbrenner

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  C23C16/34 ,  H01L21/02 ,  H01L29/06

Abstract: A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.

公开(公告)号：US10858246B2

公开(公告)日：2020-12-08

申请号：US15901196

申请日：2018-02-21

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Anna-Katharina Kaiser ,  Soenke Pirk ,  Juergen Steinbrenner ,  Julia-Magdalena Straeussnigg

IPC: B81C1/00 ,  H04R31/00 ,  H04R19/00 ,  H04R19/04

Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

公开(公告)号：US20200083133A1

公开(公告)日：2020-03-12

申请号：US16556642

申请日：2019-08-30

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Oliver Humbel ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Christian Maier ,  Gerhard Schmidt ,  Juergen Steinbrenner

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/00 ,  H01L29/06 ,  H01L21/02 ,  C23C16/34

Abstract: A semiconductor device includes a semiconductor body and a first portion including silicon and nitrogen. The first portion is in direct contact with the semiconductor body. A second portion including silicon and nitrogen is in direct contact with the first portion. The first portion is between the semiconductor body and the second portion. An average silicon content in the first portion is higher than in the second portion.

公开(公告)号：US20190333765A1

公开(公告)日：2019-10-31

申请号：US16395772

申请日：2019-04-26

Applicant: Infineon Technologies AG

Inventor： Markus Kahn ,  Oliver Humbel ,  Ravi Keshav Joshi ,  Philipp Sebastian Koch ,  Angelika Koprowski ,  Bernhard Leitl ,  Christian Maier ,  Gerhard Schmidt ,  Juergen Steinbrenner

IPC: H01L21/02 ,  H01L29/66

Abstract: A method for manufacturing a high-voltage semiconductor device includes exposing a semiconductor substrate to a plasma to form a protective substance layer on the semiconductor substrate. A semiconductor device includes a semiconductor substrate and a protective substance layer on the semiconductor substrate.

公开(公告)号：US20180211821A1

公开(公告)日：2018-07-26

申请号：US15412131

申请日：2017-01-23

Applicant: Infineon Technologies AG

Inventor： Rudolf Kogler ,  Juergen Steinbrenner ,  Wolfgang Dastel ,  Harald Huetter ,  Markus Kahn

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C23C16/503 ,  C23C16/505

CPC classification number: H01J37/32715 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32697 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335 ,  H01J2237/338 ,  H01L21/67034 ,  H01L21/67069 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68785

Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

公开(公告)号：US20150235917A1

公开(公告)日：2015-08-20

申请号：US14699704

申请日：2015-04-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Silvana Fister ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L23/31 ,  H01L23/29 ,  H01L21/02

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

Abstract translation: 公开了钝化层和制备钝化层的方法。 在一个实施例中，制造钝化层的方法包括在工件上沉积第一硅基电介质层，第一硅基电介质层包含氮，并在第一硅基电介质层上原位沉积第二硅基电介质层， 所述第二电介质层包含氧。

公开(公告)号：US20140335700A1

公开(公告)日：2014-11-13

申请号：US13892003

申请日：2013-05-10

Applicant: Infineon Technologies AG

Inventor： Guenter Denifl ,  Markus Kahn ,  Helmut Schoenherr ,  Daniel Maurer ,  Thomas Grille ,  Joachim Hirschler ,  Ursula Hedenig ,  Roland Moennich ,  Matthias Kuenle

IPC: H01L21/02 ,  C23C16/26

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362

Abstract: Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking.

Abstract translation: 通过选择相应的处理参数，可以通过等离子体增强化学气相沉积来沉积具有降低的氢含量的碳层。 这样的碳层可以经受高温处理而不会显着过度收缩。