公开(公告)号：US10539587B2

公开(公告)日：2020-01-21

申请号：US15422138

申请日：2017-02-01

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Steffen Bieselt

IPC: G01P15/02 ,  G01P15/08

Abstract: An accelerometer may include a seismic mass to flex based on acceleration components perpendicular to a surface of a substrate. The seismic mass may include a first electrode and a portion of the substrate. A first surface of the seismic mass may be adjacent to a first cavity in the substrate, and a second surface of the seismic mass being adjacent to a second cavity. The first surface of the seismic mass and the second surface of the seismic mass may be on opposite sides of the seismic mass. The accelerometer may include a second electrode separated from the second surface of the seismic mass by at least the second cavity.

公开(公告)号：US10060816B2

公开(公告)日：2018-08-28

申请号：US15372992

申请日：2016-12-08

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Roeth ,  Bernhard Winkler ,  Boris Binder

IPC: G01L9/00 ,  B81C1/00

CPC classification number: G01L9/0072 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  G01L9/0041 ,  G01L9/0073

Abstract: Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. The support structure comprises a plurality of support elements that hold or carry the movable element. The support elements can comprise individual points or feet-like elements, rather than a conventional interconnected frame, that enable improved motion of the movable element, easier removal of a sacrificial layer between the movable element and substrate during manufacture and a more favorable deflection ratio, among other benefits.

公开(公告)号：US09711393B2

公开(公告)日：2017-07-18

申请号：US14819520

申请日：2015-08-06

Applicant: Infineon Technologies Dresden GMBH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt

IPC: H01L29/06 ,  H01L21/764 ,  H01L21/762 ,  H01L27/12 ,  H01L21/324 ,  H01L29/78 ,  B81C1/00

CPC classification number: H01L21/764 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C2201/0116 ,  H01L21/3247 ,  H01L21/7624 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/7833

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.

公开(公告)号：US20170092659A1

公开(公告)日：2017-03-30

申请号：US15375277

申请日：2016-12-12

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt ,  Franz Hirler ,  Anton Mauder ,  Wolfgang Scholz ,  Hans-Joachim Schulze ,  Francisco Javier Santos Rodriguez

IPC: H01L27/12 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/768

CPC classification number: H01L27/1207 ,  H01L21/761 ,  H01L21/76283 ,  H01L21/764 ,  H01L21/76895 ,  H01L21/823487 ,  H01L29/7397 ,  H01L29/7813 ,  H05K1/0256 ,  H05K1/0284 ,  H05K1/183 ,  H05K3/30 ,  H05K2201/10522 ,  Y10T29/4913

Abstract: According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.

公开(公告)号：US20160185594A1

公开(公告)日：2016-06-30

申请号：US15064916

申请日：2016-03-09

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Andre Roeth ,  Steffen Bieselt

IPC: B81B7/02

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0764 ,  H01L21/3065 ,  H01L29/84

Abstract: Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.

Abstract translation: 实施例涉及集成电路传感器，更具体地涉及集成在集成电路结构中的传感器和用于产生传感器的方法。 在一个实施例中，传感器装置包括衬底; 衬底中的第一沟槽; 第一可移动元件，其通过彼此间隔开并布置在第一可移动元件的周边的第一多个支撑元件悬挂在第一沟槽中; 以及布置在所述基板上以密封所述第一沟槽的第一层，从而提供包含所述第一可移动元件和所述第一多个支撑元件的第一空腔。

公开(公告)号：US09376314B2

公开(公告)日：2016-06-28

申请号：US14315979

申请日：2014-06-26

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Boris Binder

IPC: H01L27/20 ,  H01L29/84 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B7/008 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81C2203/0721 ,  B81C2203/0735 ,  G01D5/145 ,  G01L9/0073

Abstract: A method for manufacturing a micromechanical system includes forming in a Front-End-of-Line (FEOL) process transistors in a transistor region; after the FEOL-process, forming a sacrificial layer; structuring the sacrificial layer to form a structured sacrificial layer; forming a functional layer at least partially covering the structured sacrificial layer; and removing the sacrificial layer to create a cavity.

Abstract translation: 一种用于制造微机械系统的方法包括在晶体管区域中的前端（FEOL）处理晶体管中形成; 在FEOL工艺之后，形成牺牲层; 构造牺牲层以形成结构化牺牲层; 形成至少部分地覆盖所述结构化牺牲层的功能层; 并去除牺牲层以形成空腔。

公开(公告)号：US20160126926A1

公开(公告)日：2016-05-05

申请号：US14932303

申请日：2015-11-04

Applicant: INFINEON TECHNOLOGIES DRESDEN GMBH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann ,  Thomas Santa ,  Markus Burian

IPC: H03H9/24 ,  B81C1/00 ,  B81B3/00 ,  H03H3/007

CPC classification number: H03H9/2452 ,  B81B3/0078 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C1/00301 ,  B81C1/00396 ,  B81C2203/0145 ,  H03H3/0072 ,  H03H3/0073 ,  H03H9/02259 ,  H03H9/2463 ,  H03H2009/02291 ,  H03H2009/02307 ,  H03H2009/0233 ,  H03H2009/02496

Abstract: Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions.

Abstract translation: 实施例涉及能够应用最大可用片上电压的MEMS谐振器结构和方法。 在一个实施例中，MEMS谐振器包括接地电位和谐振器的间隙电极之间的连接。 实施例还涉及不太复杂的制造系统和方法，并且能够制造尺寸减小的MEMS谐振器。

公开(公告)号：US20160060106A1

公开(公告)日：2016-03-03

申请号：US14835001

申请日：2015-08-25

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Heiko Froehlich ,  Mirko Vogt ,  Maik Stegemann

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00047 ,  B81C1/00476 ,  G01N27/414 ,  G01N27/4473 ,  G01N33/48721 ,  H01L21/30604 ,  H01L29/06

Abstract: Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate.

公开(公告)号：US20150340268A1

公开(公告)日：2015-11-26

申请号：US14819520

申请日：2015-08-06

Applicant: Infineon Technologies Dresden GMBH

Inventor： Thoralf Kautzsch ,  Alessia Scire ,  Steffen Bieselt

IPC: H01L21/764 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762

CPC classification number: H01L21/764 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C2201/0116 ,  H01L21/3247 ,  H01L21/7624 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/7833

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate.

Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在衬底内形成第一空腔。 第一空腔设置在基板的一部分下方。 该方法还包括在第一腔内形成第一支柱以支撑衬底的该部分。

公开(公告)号：US20150323381A1

公开(公告)日：2015-11-12

申请号：US14272588

申请日：2014-05-08

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch

IPC: G01J1/16 ,  H01L31/18 ,  H01L31/0216 ,  H01L27/144

CPC classification number: H01L31/10 ,  G01J1/1626 ,  G01S3/783 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02164 ,  H01L31/035272 ,  H01L31/101 ,  H01L31/18

Abstract: The present disclosure relates to an optical receiver. The optical receiver has a first photosensor and a second photosensor disposed within a substrate. The first photosensor has a first angled surface located on a first side of a depression within the substrate, and the second photosensor has a second angled surface located on a second side of the depression, opposite the first side of the depression. A plurality of blocking structures are disposed over the substrate. The plurality of blocking structures block radiation that is not incident on the first and second angled surfaces. By receiving incident radiation on the first and second angled surfaces, the first and second photosensors are able to generate directional-dependent photocurrents that vary depending upon an angle of incident radiation. Based upon the directional-dependent photocurrents, an angle of incident radiation can be determined.

Abstract translation: 本公开涉及一种光接收机。 光接收器具有设置在基板内的第一光电传感器和第二光电传感器。 第一光传感器具有位于衬底内的凹陷的第一侧上的第一倾斜表面，并且第二光电传感器具有位于凹部的与凹陷的第一侧相对的第二侧上的第二倾斜表面。 多个阻挡结构设置在衬底上。 多个阻挡结构阻挡不入射在第一和第二倾斜表面上的辐射。 通过在第一和第二倾斜表面上接收入射辐射，第一和第二光电传感器能够产生取决于入射辐射角度的方向依赖的光电流。 基于方向依赖的光电流，可以确定入射辐射的角度。