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    Titanium-Based High-K Dielectric Films
    11.
    发明申请
    Titanium-Based High-K Dielectric Films 有权
    钛基高K介电薄膜

    公开(公告)号：US20130044404A1

    公开(公告)日：2013-02-21

    申请号：US13657782

    申请日：2012-10-22

    Applicant: Intermolecular, Inc.

    Inventor： Hanhong Chen ,  Nobumichi Fuchigami ,  Imran Hashim ,  Edward L. Haywood ,  Pragati KUMAR ,  Sandra G. Malhotra ,  Monica Sawkar Mathur ,  Prashant B. Phatak ,  Sunil Shanker

    IPC: H01G4/30 ,  H01G4/018

    CPC classification number: H01G4/1218 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/56 ,  H01G4/33 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/3142 ,  H01L28/40

    Abstract: This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.

    Abstract translation: 本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。 使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺形成金属 - 绝缘体 - 金属（MIM）堆叠，以形成使用含酰胺前体的TiO 2电介质。 在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。 进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。 该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

    Nonvolatile memory elements
    12.
    发明授权
    Nonvolatile memory elements 有权
    非易失性存储元件

    公开(公告)号：US09029232B2

    公开(公告)日：2015-05-12

    申请号：US14281550

    申请日：2014-05-19

    Applicant: Intermolecular Inc.

    Inventor： Sandra G Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Wayne R French ,  Pragati Kumar ,  Prashant B Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L21/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Inexpensive electrode materials to facilitate rutile phase titanium oxide
    14.
    发明授权
    Inexpensive electrode materials to facilitate rutile phase titanium oxide 有权
    廉价的电极材料，以促进金红石相氧化钛

    公开(公告)号：US08980744B2

    公开(公告)日：2015-03-17

    申请号：US13675852

    申请日：2012-11-13

    Applicant: Intermolecular, Inc.

    Inventor： Hanhong Chen ,  Toshiyuki Hirota ,  Pragati Kumar ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L27/108 ,  H01L49/02 ,  C23C16/40

    CPC classification number: H01L28/60 ,  C23C16/405 ,  H01L27/10852 ,  H01L28/40

    Abstract: This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for lattice matching characteristics. This material may be created from a relatively inexpensive metal oxide which is processed to adopt a conductive, but difficult-to-produce oxide state, with specific crystalline form; to provide one example, specific materials are disclosed that are compatible with the growth of rutile phase titanium dioxide (TiO2) for use as a dielectric, thereby leading to predictable and reproducible higher dielectric constant and lower effective oxide thickness and, thus, greater part density at lower cost.

    Abstract translation: 本公开提供了制造半导体堆叠和相关设备（诸如电容器和DRAM单元）的方法。 特别地，底部电极具有选择用于晶格匹配特性的材料。 该材料可以由相对廉价的金属氧化物制成，其被处理成具有特定结晶形式的导电但难以产生的氧化物状态; 为了提供一个实例，公开了与用作电介质的金红石相二氧化钛（TiO 2）的生长相容的具体材料，从而导致可预测和可再现的较高介电常数和较低的有效氧化物厚度，因此更大的部分密度 以较低的成本。

    Combinatorial processing using a remote plasma source
    15.
    发明授权
    Combinatorial processing using a remote plasma source 有权
    使用远程等离子体源进行组合处理

    公开(公告)号：US08821987B2

    公开(公告)日：2014-09-02

    申请号：US13717478

    申请日：2012-12-17

    Applicant: Intermolecular, Inc.

    Inventor： Sunil Shanker ,  Tony P. Chiang ,  Chi-I Lang ,  Sandip Niyogi

    IPC: H05H1/00 ,  C23C16/00 ,  C23C16/50 ,  B44C1/22

    CPC classification number: C23C16/50 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4584

    Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.

    Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括外室，远程等离子体源和喷头。 喷头组件内的惰性气体端口可用于改变由喷头的不同区域中的远程等离子体源产生的反应性基团或反应中性物质的浓度和能量。 这允许使用喷头来对表面的不同区域进行表面处理。 诸如远程等离子体参数，惰性气体流量，压力等的不同参数允许以组合的方式处理衬底的不同区域。

    Nonvolatile memory elements
    16.
    发明授权
    Nonvolatile memory elements 有权
    非易失性存储元件

    公开(公告)号：US08765567B2

    公开(公告)日：2014-07-01

    申请号：US14062473

    申请日：2013-10-24

    Applicant: Intermolecular Inc.

    Inventor： Sandra G Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Pragati Kumar ,  Prashant B Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L21/02

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Methods for depositing high-K dielectrics
    17.
    发明授权
    Methods for depositing high-K dielectrics 有权
    沉积高K电介质的方法

    公开(公告)号：US08541828B2

    公开(公告)日：2013-09-24

    申请号：US13668488

    申请日：2012-11-05

    Applicant: Intermolecular, Inc.

    Inventor： Imran Hashim ,  Edward L. Haywood ,  Sandra G. Malhotra ,  Xiangxin Rui ,  Sunil Shanker

    IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC classification number: H01L21/3141 ,  C23C16/02 ,  C23C16/405 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/31604 ,  H01L28/91

    Abstract: Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer includes at least a portion of rutile titanium oxide.

    Abstract translation: 描述了用于沉积高K电介质的方法，包括在衬底上沉积第一电极，其中第一电极选自铂和钌，对暴露的金属施加氧等离子体处理以减小接触角 并且使用化学气相沉积工艺和原子层沉积工艺中的至少一种将氧化钛层沉积在暴露的金属上，其中氧化钛层包括至少一部分金红石型氧化钛。

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