公开(公告)号：US07801199B2

公开(公告)日：2010-09-21

申请号：US11026495

申请日：2004-12-30

申请人： James K. Guenter ,  Jimmy A. Tatum ,  James R. Biard

发明人： James K. Guenter ,  Jimmy A. Tatum ,  James R. Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/0264 ,  H01S5/0422 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/3095 ,  H01S2301/02

摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。

公开(公告)号：US07229754B2

公开(公告)日：2007-06-12

申请号：US11286621

申请日：2005-11-23

申请人： Laszlo B. Kish ,  Maria Dobozi-King ,  Ryland Young ,  Mosong Cheng ,  James R. Biard ,  Sergey Bezrukov

发明人： Laszlo B. Kish ,  Maria Dobozi-King ,  Ryland Young ,  Mosong Cheng ,  James R. Biard ,  Sergey Bezrukov

IPC分类号： C12Q1/70

CPC分类号： B82Y30/00 ,  B01L3/5088 ,  C12N7/00 ,  C12N2795/10311 ,  C12N2795/10322 ,  C12N2799/00 ,  C12Q1/04 ,  C12Q1/6825 ,  C12Q1/689 ,  G01N33/48707 ,  G01N33/54373 ,  G01N33/56911

摘要： The present invention provides a method for detecting bacteria and a nano-well device having one or more input/output connections about a gap and one or more bacteriophages at or about the gap that trigger a detectable electrical field fluctuation when the one or more bacteriophages contact a cognate target within a liquid sample.

摘要翻译： 本发明提供一种用于检测细菌的方法和具有一个或多个输入/输出连接的纳米孔装置，所述输入/输出连接围绕间隙和在间隙处或周围的一个或多个噬菌体，当一个或多个噬菌体接触时触发可检测的电场波动 液体样品中的同源靶标。

公开(公告)号：US07065124B2

公开(公告)日：2006-06-20

申请号：US10767920

申请日：2004-01-29

申请人： James R. Biard ,  Ralph H. Johnson ,  Klein L. Johnson

发明人： James R. Biard ,  Ralph H. Johnson ,  Klein L. Johnson

IPC分类号： H01S3/08 ,  H01S5/00

CPC分类号： H01S5/18358 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/205 ,  H01S5/3211 ,  H01S5/423 ,  H01S2301/166

摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.

摘要翻译： 具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。 这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生较低和更线性的串联电阻。 此外，N型间隔层可以与量子阱的有源区相邻。 从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。 通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。

公开(公告)号：US4661726A

公开(公告)日：1987-04-28

申请号：US793379

申请日：1985-10-31

申请人： James R. Biard

发明人： James R. Biard

IPC分类号： H03K19/0952 ,  H03K19/003 ,  H03K19/0956 ,  H03K17/14 ,  H03K19/094

CPC分类号： H03K19/00384

摘要： A temperature compensation system for semiconductor logic gates where the temperature compensation is accomplished by two depletion mode FET's in electrical series relationship is disclosed. One of the FET's is adapted to operate in its triode region of operation and the other in its saturation region of operation.

摘要翻译： 公开了一种用于半导体逻辑门的温度补偿系统，其中温度补偿由电气串联关系的两个耗尽型FET实现。 其中一个FET适用于其三极管工作区域，另一个在其饱和运行区域。

公开(公告)号：US4529947A

公开(公告)日：1985-07-16

申请号：US617138

申请日：1984-06-04

申请人： James R. Biard ,  Ben R. Elmer

发明人： James R. Biard ,  Ben R. Elmer

IPC分类号： H01L27/08 ,  H04B10/152 ,  H03F3/45

CPC分类号： H01L27/0802

摘要： A differential stage of an amplifier includes an input transistor and a second transistor with a significantly greater emitter cross-sectional area than the input transistor. Quiescent emitter current is divided between the two transistors in substantially the same ratio as the emitter cross-sectional areas so that the emitter current densities are substantially equal.

摘要翻译： 放大器的差分级包括输入晶体管和具有比输入晶体管显着更大的发射极横截面面积的第二晶体管。 静态发射极电流在两个晶体管之间以与发射极横截面积基本相同的比例分压，使得发射极电流密度基本相等。

公开(公告)号：US20130017534A1

公开(公告)日：2013-01-17

申请号：US13464936

申请日：2012-05-04

申请人： Cynthia S. Nickel ,  Clois E. Powell ,  James R. Biard ,  William A. Stapleton ,  Gary M. Aron ,  Jeanette Hill ,  Ray G. Cook ,  Daniel M. Justiss ,  Frederick J. Strieter ,  Wayne T. Kilian ,  Andrei M. Manoliu

发明人： Cynthia S. Nickel ,  Clois E. Powell ,  James R. Biard ,  William A. Stapleton ,  Gary M. Aron ,  Jeanette Hill ,  Ray G. Cook ,  Daniel M. Justiss ,  Frederick J. Strieter ,  Wayne T. Kilian ,  Andrei M. Manoliu

IPC分类号： G01N27/26 ,  C12M1/42

CPC分类号： C12Q1/18 ,  B01L3/5085 ,  B01L2300/0636 ,  B01L2300/0645 ,  C12Q1/02 ,  C12Q1/04 ,  G01N15/0656 ,  G01N33/48735

摘要： A method of determining antimicrobial activity of an agent can include providing a well, wherein the well contains at least one antimicrobial agent, the well further including at least two electrodes. A sample of a microbe can be added into the well and a voltage pulsed between the electrodes. An electrical property can be sampled and recorded. In another aspect, a method of identifying at least one microbe includes taking a sample containing the at least one microbe, isolating the at least one microbe from the sample, dividing the at least one microbe into a at least one well, wherein each well contains at least one antimicrobial agent and at least two electrodes. A voltage is pulsed between the at least two electrodes, an electrical property is sampled during the pulsing and recorded. In another aspect, a diagnostic device for detecting at least one microbe is presented.

摘要翻译： 确定试剂的抗微生物活性的方法可以包括提供井，其中所述井含有至少一种抗微生物剂，所述井还包括至少两个电极。 可以将微量的样品加入阱中，并在电极之间施加脉冲电压。 可以对电气特性进行采样和记录。 在另一方面，鉴定至少一种微生物的方法包括取包含所述至少一种微生物的样品，从所述样品中分离所述至少一种微生物，将所述至少一种微生物分成至少一种孔，其中每个孔含有 至少一种抗微生物剂和至少两种电极。 在至少两个电极之间脉冲电压，在脉冲期间对电性质进行采样并记录。 在另一方面，提供了用于检测至少一个微生物的诊断装置。

公开(公告)号：US07662650B2

公开(公告)日：2010-02-16

申请号：US10486666

申请日：2002-08-12

申请人： Michael J. Haji-Sheikh ,  James R. Biard ,  James K. Guenter ,  Bobby M. Hawkins

发明人： Michael J. Haji-Sheikh ,  James R. Biard ,  James K. Guenter ,  Bobby M. Hawkins

IPC分类号： H01L21/66 ,  H01L21/00 ,  G01R31/26

CPC分类号： G01R31/275 ,  G01R31/2831 ,  G01R31/2863 ,  G01R31/2872 ,  G01R31/2874 ,  G01R31/2884 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/423

摘要： Disclosed are methods for providing wafer photonic flow control to a semiconductor wafer (1700) having a substrate (1720), at least one active layer (1765) and at least one surface layer (1710). Photonic flow control can be achieved through the formation of trenches (1725) and/or insulating implants (1730) formed in said wafer (1700), whereby active regions (1760) are defined by trenches (1725) that operate as nonconductive areas (1750). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Photonic flow control at the wafer level is important when using WLBI methods and systems.

摘要翻译： 公开了用于向具有衬底（1720），至少一个有源层（1765）和至少一个表面层（1710）的半导体晶片（1700）提供晶片光子流控制的方法。 可以通过形成在所述晶片（1700）中形成的沟槽（1725）和/或绝缘植入物（1730）来实现光子流控制，由此有源区域（1760）由作为非导电区域（1750）的沟槽（1725）限定 ）。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的光子流量控制很重要。

公开(公告)号：US07418021B2

公开(公告)日：2008-08-26

申请号：US11026355

申请日：2004-12-30

申请人： James K. Guenter ,  Jimmy A. Tatum ,  James R. Biard

发明人： James K. Guenter ,  Jimmy A. Tatum ,  James R. Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/0264 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/3095 ,  H01S2301/02

摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。

公开(公告)号：US06558973B2

公开(公告)日：2003-05-06

申请号：US09766797

申请日：2001-01-22

申请人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

发明人： Ralph H. Johnson ,  James K. Guenter ,  James R. Biard

IPC分类号： H01L2100

CPC分类号： H01L31/105 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02546 ,  H01L31/184 ,  Y02E10/544 ,  Y10S438/938

摘要： A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired lattice constant is configured at a low temperature. A reverse grade back is performed to match a desired lattice constant. Thereafter, a thick layer is formed thereon, based on the desired lattice constant. Annealing can then occur to isolate dislocated material in a grading layer and a reverse grading layer. Thereon a strained layer superlattice substrate is created upon which a high-speed photodiode can be formed. Implant or diffusion layers grown in dopants can be formed based on materials, such as Be, Mg, C, Te, Si, Se, Zn, or others. A metal layer can be formed over a cap above a P+ region situated directly over an N-active region. The active region also includes a p-doped region. The high-speed photodiode can thus be formed utilizing GaAs, or other substrate material, such as germanium and silicon.

公开(公告)号：US5589935A

公开(公告)日：1996-12-31

申请号：US452607

申请日：1995-05-25

申请人： James R. Biard

发明人： James R. Biard

IPC分类号： B08B3/00 ,  D06F39/00 ,  G01N21/53 ,  G01N21/00 ,  D06F33/00

CPC分类号： A47L15/4297 ,  B08B3/00 ,  D06F39/004 ,  G01N21/534

摘要： A turbidity sensor is provided with two light sensitive components or elements. One light sensitive component is displaced from a light source, such as a light emitting diode, so that a fluid can pass therebetween. A second light sensitive component is disposed within a common compartment with the light source so that it can measure the intensity of light provided by the light source. The light source and the second light sensitive components can be individual elements, or chips, within a common component package. A regulator is provided to control the magnitude of current provided to the light source so that its light intensity can be regulated. In this manner, the intensity of light emitted by the light source, such as a light emitting diode, can be controlled regardless of the aging of the LED, the variability of LED characteristics and the temperature surrounding the LED. The constant light emission from the light source permits the other light sensitive component to be used as a reliable indication of the turbidity of a solution passing between the light source and the first light sensitive component.

摘要翻译： 浊度传感器具有两个光敏元件或元件。 一个光敏元件从诸如发光二极管的光源移位，使得流体可以在其间通过。 第二光敏部件设置在具有光源的公共隔间内，使得其可以测量由光源提供的光的强度。 光源和第二光敏部件可以是公共部件封装内的单个元件或芯片。 提供调节器以控制提供给光源的电流的大小，使得其光强度可以被调节。 以这种方式，可以控制由诸如发光二极管的光源发射的光的强度，而不管LED的老化，LED特性的变化以及LED周围的温度。 来自光源的恒定光发射允许另一个光敏部件被用作通过光源和第一光敏部件之间的溶液的浊度的可靠指示。