公开(公告)号：US08907390B2

公开(公告)日：2014-12-09

申请号：US12944663

申请日：2010-11-11

Applicant: Jason Reid

Inventor： Jason Reid

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01F10/32 ,  G11C11/16 ,  B82Y25/00 ,  H01L43/08

CPC classification number: G11C11/16 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01L43/08

Abstract: Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.

Abstract translation: 本文公开了包括热障的热辅助磁隧道结结构。 热障由无定形形式的金属陶瓷材料构成，使得热障具有低导热性和高导电性。 与传统的磁性隧道结结构相比，所公开的结构可以更快地切换并改善与标准半导体制造工艺的兼容性。

公开(公告)号：US08409880B2

公开(公告)日：2013-04-02

申请号：US13468936

申请日：2012-05-10

Applicant: Jean Pierre Nozieres ,  Jason Reid

Inventor： Jean Pierre Nozieres ,  Jason Reid

IPC: H01L21/00

CPC classification number: H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract translation: 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。

公开(公告)号：US20090072218A1

公开(公告)日：2009-03-19

申请号：US11901492

申请日：2007-09-18

Applicant: Semyon Savransky ,  Ilya Karpov ,  Jason Reid

Inventor： Semyon Savransky ,  Ilya Karpov ,  Jason Reid

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L27/2427 ,  H01L45/1233 ,  H01L45/144

Abstract: A phase change memory may be formed of a phase change material alloy that produces a higher threshold voltage and, in some cases, is operable at higher temperatures. For example, the formulation may include a poor metal, antimony, and at least one of tellurium or selenium.

Abstract translation: 相变存储器可以由相变材料合金形成，其产生较高的阈值电压，并且在一些情况下可在较高温度下操作。 例如，制剂可以包括不良金属，锑以及碲或硒中的至少一种。

公开(公告)号：US20070227878A1

公开(公告)日：2007-10-04

申请号：US11392135

申请日：2006-03-29

Applicant: Roger Hamamjy ,  Kuo-Wei Chang ,  Jason Reid

Inventor： Roger Hamamjy ,  Kuo-Wei Chang ,  Jason Reid

IPC: C23C14/00

CPC classification number: C23C14/0623 ,  C23C14/345 ,  G11C13/0004 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675 ,  H01L45/1683

Abstract: A phase change memory including an ovonic threshold switch may be formed with reduced argon in the ovonic threshold switch. The presence of argon adversely impacts the performance of the ovonic threshold switch. Argon concentration can be reduced by depositing the phase change material for the ovonic threshold switch in a relatively low pressure argon environment to enable the argon pressure within said chamber to be reduced.

Abstract translation: 包括超声阈值开关的相变存储器可以在超声波阈值开关中由减少的氩形成。 氩气的存在不利地影响了超声波阈值开关的性能。 可以通过在相对低压的氩气环境中沉积用于超声阈值开关的相变材料来降低氩浓度，以使所述室内的氩气压力降低。

公开(公告)号：US20060258146A1

公开(公告)日：2006-11-16

申请号：US11489605

申请日：2006-07-20

Applicant: Juha Rantala ,  Jason Reid ,  T. Tormanen ,  Nungavram Viswanathan

Inventor： Juha Rantala ,  Jason Reid ,  T. Tormanen ,  Nungavram Viswanathan

IPC: H01L21/4763

CPC classification number: H01L21/3121 ,  C07F7/0874 ,  C07F7/12 ,  C07F7/123 ,  C07F7/1804 ,  C07F7/1888 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/31133 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76825

Abstract: A method for making an integrated circuit. An area of dielectric material is formed on a substrate by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material. One of the precursors is a compound R1R2R3SiR4, wherein R1, R2, R3 are each independently aryl, a cross linkable group, or alkyl of 1-14 carbons, and wherein R4 is alkoxy, acyloxy, —OH or halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate by hydrolyzing a tetraalkoxysilane, trialkoxysilane, trichlorosilane, dialkoxysilane, or dichlorosilane, with R1R2R4MR5, wherein R1, R2 and R4 are independently aryl, alkyl, alkenyl, epoxy or alkynyl, at least one of R1, R2 and R4 is fully or partially fluorinated, M is selected from group 14 of the periodic table, and R5 is either alkoxy, OR3 wherein R3 is alkyl of 1 to 10 carbons, or halogen.

Abstract translation: 一种制造集成电路的方法。 通过水解多个前体以形成混合有机无机材料，在基底上形成电介质材料区域。 其中一种前体是化合物R 1 R 2 R 3 R 3 SiR 4，其中R 1 R 2，R 3，R 3各自独立地为芳基，可交联基团或1-14个碳原子的烷基，并且其中R 4， 烷氧基，酰氧基，-OH或卤素。 还公开了通过水解四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷或二氯硅烷在基底上形成杂化有机无机层的方法，其中R 1，R 2，R 2， 其中R 1，R 2，R 4和R 4独立地为芳基 烷基，烯基，环氧基或炔基，R 1，R 2和R 4中的至少一个是完全或部分氟化的，M是 选自周期表第14族，R 5为烷氧基，其中R 3为1至10个碳的烷基， 或卤素。

公开(公告)号：US08411500B2

公开(公告)日：2013-04-02

申请号：US13154912

申请日：2011-06-07

Applicant: Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

Inventor： Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

IPC: G11C11/15 ,  G11C11/14

CPC classification number: G11C11/16 ,  B82Y25/00 ,  G11C11/1675 ,  H01F10/3254

Abstract: The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.

Abstract translation: 本公开涉及使用热辅助切换写入操作来写入的磁性元件，其包括由隧道势垒形成的磁性隧道结，所述隧道势垒设置在第一和第二磁性层之间，所述第二磁性层具有可以调整该方向的第二磁化 在磁隧道结被加热到高阈值温度的写操作期间; 连接在磁隧道结上端的上电流线; 以及横向延伸并连接到磁性隧道结的底端的带部分; 磁性装置还包括基本上平行于带部分延伸的底部绝热层，并且布置成使得带部分在磁性隧道结和底部绝热层之间。 磁性元件允许在写入操作期间减少热损失并降低功耗。

公开(公告)号：US08273582B2

公开(公告)日：2012-09-25

申请号：US12500573

申请日：2009-07-09

Applicant: Jean Pierre Nozieres ,  Jason Reid

Inventor： Jean Pierre Nozieres ,  Jason Reid

IPC: H01L21/00

CPC classification number: H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract translation: 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。

公开(公告)号：US20110008915A1

公开(公告)日：2011-01-13

申请号：US12500573

申请日：2009-07-09

Applicant: Jean Pierre Nozieres ,  Jason Reid

Inventor： Jean Pierre Nozieres ,  Jason Reid

IPC: H01L21/28

CPC classification number: H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

Abstract: Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

Abstract translation: 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。

公开(公告)号：US07622399B2

公开(公告)日：2009-11-24

申请号：US10796286

申请日：2004-03-10

Applicant: Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

Inventor： Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

IPC: H01L21/469

CPC classification number: H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/3121 ,  Y10T428/31663 ,  Y10T428/31678

Abstract: A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

Abstract translation: 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料，并通过热固化工艺固化介电材料，其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。

公开(公告)号：US20070077779A1

公开(公告)日：2007-04-05

申请号：US11606941

申请日：2006-12-01

Applicant: Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

Inventor： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

IPC: H01L21/31

CPC classification number: H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

Abstract: A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

Abstract translation: 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR3 3的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 3 3的化合物; 水解和冷凝R1MOR3 3N，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。