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11.发明授权Methods of programming multi-level cell nonvolatile memory devices and devices so operating 有权编程多级单元非易失性存储器件和器件的操作方法公开(公告)号：US09343158B2
公开(公告)日：2016-05-17
申请号：US14165835
申请日：2014-01-28
Applicant: Jung-Ho Song , Su-Yong Kim , Sang-Won Hwang
Inventor： Jung-Ho Song , Su-Yong Kim , Sang-Won Hwang
CPC classification number: G11C16/14 , G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C16/3459
Abstract: To program in a nonvolatile memory device include a plurality of memory cells that are programmed into multiple states through at least two program steps, a primary program is performed from an erase level to a first target level with respect to the memory cells coupled to a selected word line A preprogram is performed from the erase level to a preprogram level in association with the primary program with respect to the memory cells coupled to the selected word line, where the preprogram level is larger than the erase level and smaller than the first target level A secondary program is performed from the preprogram level to a second target level with respect to the preprogrammed memory cells coupled to the selected word line.
Abstract translation: 在非易失性存储器件中编程包括通过至少两个程序步骤被编程成多个状态的多个存储器单元，相对于耦合到所选择的存储单元，从擦除电平到第一目标电平执行主程序 字线相对于耦合到所选择的字线的存储器单元与原始程序相关联地从擦除电平执行预编程电平，其中预编程电平大于擦除电平并小于第一目标电平 相对于耦合到所选字线的预编程存储器单元，从预编程级到第二目标级执行次程序。
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12.发明授权Nonvolatile memory device and method of reading data in nonvolatile memory device 有权非易失性存储器件和非易失性存储器件中的数据读取方法公开(公告)号：US08760919B2
公开(公告)日：2014-06-24
申请号：US13598892
申请日：2012-08-30
Applicant: Jung-Ho Song , Jin-Yub Lee , Jae-Woo Im , Seung-Jae Lee , Sang-So Park
Inventor： Jung-Ho Song , Jin-Yub Lee , Jae-Woo Im , Seung-Jae Lee , Sang-So Park
CPC classification number: G11C11/56 , G11C11/5642 , G11C16/04 , G11C16/0483 , G11C16/26 , G11C16/3404 , G11C2211/56
Abstract: A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.
Abstract translation: 提供了一种用于在非易失性存储器件中读取数据的方法。 该方法包括：对多个多电平存储器单元（MLC），在对应于MLC中的至少一个标志单元，基于所述结果选择性地执行上的MLC的第二读取操作执行第一读出操作的第一次读操作 第一感测操作，并且当执行第二读取操作时对所述至少一个标志单元执行第二感测操作。 在不执行第二读取操作时，基于第一读取操作和第一感测操作的结果输出读取数据，并且基于第一读取操作，第一感测操作，第二读取操作的结果来输出读取数据 以及执行第二读取操作时的第二感测操作。 读取数据对应于MLC中的编程数据。
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13.发明授权Systems and methods for performing a program-verify process on a nonvolatile memory by selectively pre-charging bit lines associated with memory cells during the verify operations 有权用于通过在验证操作期间选择性地预充电与存储器单元相关联的位线来对非易失性存储器执行程序验证过程的系统和方法公开(公告)号：US08068361B2
公开(公告)日：2011-11-29
申请号：US12533720
申请日：2009-07-31
Applicant: Sang-Gu Kang , Hee-won Lee , Ju Seok Lee , Jung-Ho Song
Inventor： Sang-Gu Kang , Hee-won Lee , Ju Seok Lee , Jung-Ho Song
IPC: G11C16/04
CPC classification number: G11C16/24 , G11C11/5628 , G11C16/3454 , G11C2211/5621
Abstract: A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.
Abstract translation: 通过在多个存储器单元中的每一个上执行程序循环来操作非易失性存储器系统，每个程序循环包括至少一个程序验证操作，并且在at期间选择性地预充电与多个存储器单元中的每一个相关联的位线 至少一个程序验证操作。
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14.发明授权Nonvolatile memory devices and program verification methods using one verification voltage to verify memory cells having different target states 有权非易失性存储器件和使用一个验证电压来验证具有不同目标状态的存储器单元的程序验证方法公开(公告)号：US09406393B2
公开(公告)日：2016-08-02
申请号：US14668043
申请日：2015-03-25
Applicant: Ilhan Park , Ji-Suk Kim , Jung-Ho Song , Yang-Lo Ahn
Inventor： Ilhan Park , Ji-Suk Kim , Jung-Ho Song , Yang-Lo Ahn
CPC classification number: G11C16/3459 , G11C11/5628 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C2211/5621
Abstract: A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.
Abstract translation: 程序验证方法是用于对多个存储器单元进行编程的非易失性存储器件。 程序验证方法包括应用多个验证电压，并且基于多个验证电压中的一个来确定具有不同目标阈值电压分布的存储单元的编程是否从多个存储单元中的一个完成。
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15.发明授权Optic coupler, optical fiber laser device, and active optical module using the same 有权光耦合器，光纤激光器件和使用其的有源光模块公开(公告)号：US08837885B2
公开(公告)日：2014-09-16
申请号：US13615225
申请日：2012-09-13
Applicant: Hong Seok Seo , Bong Je Park , Joon Tae Ahn , Jung-Ho Song
Inventor： Hong Seok Seo , Bong Je Park , Joon Tae Ahn , Jung-Ho Song
CPC classification number: G02B6/2821 , G02B6/2808 , G02B6/29317 , H01S3/06741 , H01S3/06745 , H01S3/094007 , H01S3/094019 , H01S3/1603
Abstract: The inventive concept provides optic couplers, optical fiber laser devices, and active optical modules using the same. The optic coupler may include a first optical fiber having a first core and a first cladding surrounding the first core, a second optical fiber having a second core transmitting a signal light to the first optical fiber and a third cladding surrounding the second core, third optical fibers transmitting pump-light to the first optical fiber in a direction parallel to the second optical fiber; and a connector connected between the first optical fiber and the second optical fiber, the connector extending the third optical fibers disposed around the second optical fiber toward the first optical fiber, the connector comprising a third core connected between the first core and the second core and a fifth cladding surrounding the third core.
Abstract translation: 本发明的概念提供光耦合器，光纤激光器件以及使用其的有源光学模块。 光耦合器可以包括具有第一芯和围绕第一芯的第一包层的第一光纤，具有向第一光纤传输信号光的第二芯和包围第二芯的第三包层的第二光纤，第三光纤 纤维在平行于第二光纤的方向上将泵浦光传输到第一光纤; 以及连接在所述第一光纤与所述第二光纤之间的连接器，所述连接器将设置在所述第二光纤周围的所述第三光纤朝向所述第一光纤延伸，所述连接器包括连接在所述第一芯和所述第二芯之间的第三芯， 围绕第三核心的第五包层。
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Patent Agency Ranking
16.发明授权Flash memory device reducing noise of common source line, program verify method thereof, and memory system including the same 有权闪存器件降低公共源极线的噪声，其程序验证方法和包括其的存储器系统公开(公告)号：US08054692B2
公开(公告)日：2011-11-08
申请号：US12472639
申请日：2009-05-27
Applicant: Sang-gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
Inventor： Sang-gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
CPC classification number: G11C7/02 , G11C7/1048 , G11C11/5628 , G11C16/0483 , G11C2211/5621 , G11C2211/5642
Abstract: A flash memory device controls a common source line voltage and performs a program verify method. A plurality of memory cells is connected between a bit line and the common source line. A data input/output circuit is connected to the bit line and is configured to store data to be programmed in a selected memory cell of the plurality of memory cells. The data input/output circuit maintains data to be programmed within the data input/output circuit during a program verify operation, and decreases noise in the common source line by selectively precharging the bit line based on the data to be programmed.
Abstract translation: 闪存器件控制公共源极线电压并执行程序验证方法。 多个存储单元连接在位线和公共源极线之间。 数据输入/输出电路连接到位线，并且被配置为存储要编程在多个存储器单元的所选存储单元中的数据。 数据输入/输出电路在编程验证操作期间保持在数据输入/输出电路内编程的数据，并且通过基于要编程的数据选择性地预充电位线来降低公共源极线中的噪声。
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公开(公告)号：US20100220535A1
公开(公告)日：2010-09-02
申请号：US12713219
申请日：2010-02-26
Applicant: Sang-Gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
Inventor： Sang-Gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
CPC classification number: G11C7/12 , G11C5/147 , G11C16/24 , G11C2207/005
Abstract: A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.
Abstract translation: 非易失性存储器件包括反馈电路和预充电开关晶体管。 反馈电路在预充电操作期间基于位线的电压电平产生反馈信号。 响应于反馈信号，预充电开关晶体管控制用于预充电位线的预充电电流。 可以增加预充电操作的速度和/或可以减少对多个位线进行预充电的偏置信号的失配。
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18.发明申请MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER 审中-公开半导体层的选择区生长掩模图和使用半导体层的掩模图案的选择区生长方法公开(公告)号：US20100081225A1
公开(公告)日：2010-04-01
申请号：US12517357
申请日：2007-10-16
Applicant: Jung-Ho Song , Kisoo Kim , Gyungock Kim
Inventor： Jung-Ho Song , Kisoo Kim , Gyungock Kim
CPC classification number: H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639
Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.
Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的半导体层的选择区域生长方法。 选择区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开口区域，第一开口区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复布置; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。
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19.发明申请METHODS OF PROGRAMMING MULTI-LEVEL CELL NONVOLATILE MEMORY DEVICES AND DEVICES SO OPERATING 有权编程多级细胞非易失性存储器件的方法和操作的器件公开(公告)号：US20140211565A1
公开(公告)日：2014-07-31
申请号：US14165835
申请日：2014-01-28
Applicant: Jung-Ho Song , Su-Yong Kim , Sang-Won Hwang
Inventor： Jung-Ho Song , Su-Yong Kim , Sang-Won Hwang
IPC: G11C16/14
CPC classification number: G11C16/14 , G11C11/5628 , G11C16/0483 , G11C16/3418 , G11C16/3459
Abstract: To program in a nonvolatile memory device include a plurality of memory cells that are programmed into multiple states through at least two program steps, a primary program is performed from an erase level to a first target level with respect to the memory cells coupled to a selected word line A preprogram is performed from the erase level to a preprogram level in association with the primary program with respect to the memory cells coupled to the selected word line, where the preprogram level is larger than the erase level and smaller than the first target level A secondary program is performed from the preprogram level to a second target level with respect to the preprogrammed memory cells coupled to the selected word line.
Abstract translation: 在非易失性存储器件中编程包括通过至少两个程序步骤被编程成多个状态的多个存储器单元，相对于耦合到所选择的存储单元，从擦除电平到第一目标电平执行主程序 字线相对于耦合到所选择的字线的存储器单元与原始程序相关联地从擦除电平执行预编程电平，其中预编程电平大于擦除电平并小于第一目标电平 相对于耦合到所选字线的预编程存储器单元，从预编程级到第二目标级执行次程序。
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20.发明申请OPTIC COUPLER, OPTICAL FIBER LASER DEVICE, AND ACTIVE OPTICAL MODULE USING THE SAME 有权光学耦合器，光纤激光器件和使用其的活性光学模块公开(公告)号：US20130243377A1
公开(公告)日：2013-09-19
申请号：US13615225
申请日：2012-09-13
Applicant: Hong-Seok SEO , Bong Je Park , Joon Tae Ahn , Jung-Ho Song
Inventor： Hong-Seok SEO , Bong Je Park , Joon Tae Ahn , Jung-Ho Song
CPC classification number: G02B6/2821 , G02B6/2808 , G02B6/29317 , H01S3/06741 , H01S3/06745 , H01S3/094007 , H01S3/094019 , H01S3/1603
Abstract: The inventive concept provides optic couplers, optical fiber laser devices, and active optical modules using the same. The optic coupler may include a first optical fiber having a first core and a first cladding surrounding the first core, a second optical fiber having a second core transmitting a signal light to the first optical fiber and a third cladding surrounding the second core, third optical fibers transmitting pump-light to the first optical fiber in a direction parallel to the second optical fiber; and a connector connected between the first optical fiber and the second optical fiber, the connector extending the third optical fibers disposed around the second optical fiber toward the first optical fiber, the connector comprising a third core connected between the first core and the second core and a fifth cladding surrounding the third core.
Abstract translation: 本发明的概念提供光耦合器，光纤激光器件以及使用其的有源光学模块。 光耦合器可以包括具有第一芯和围绕第一芯的第一包层的第一光纤，具有向第一光纤传输信号光的第二芯和包围第二芯的第三包层的第二光纤，第三光纤 纤维在平行于第二光纤的方向上将泵浦光传输到第一光纤; 以及连接在所述第一光纤与所述第二光纤之间的连接器，所述连接器将设置在所述第二光纤周围的所述第三光纤朝向所述第一光纤延伸，所述连接器包括连接在所述第一芯和所述第二芯之间的第三芯， 围绕第三核心的第五包层。
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