公开(公告)号：US06215087B1

公开(公告)日：2001-04-10

申请号：US09101516

申请日：1998-07-10

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Osamu Yokoyama ,  Shuichi Ishizuka ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： B23K1000

CPC分类号： H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76837

摘要： Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

摘要翻译： 将微波引入到等离子体处理装置的等离子体室中，并施加磁场以使等离子体产生气体通过电子回旋共振被置于等离子体状态。 该等离子体被引入到等离子体处理装置的成膜室中，以允许包括碳和氟的复合气体或碳，氟和氢的复合气体以及碳氢气体的成膜气体处于等离子体状态。 此外，通过以等离子体状态放置的成膜气体形成由氟添加碳膜构成的绝缘膜。

公开(公告)号：US20070113787A1

公开(公告)日：2007-05-24

申请号：US11654007

申请日：2007-01-17

申请人： Tsutomu Higashiura ,  Takashi Akahori ,  Satoru Kawakami ,  Nobuhiro Iwama

发明人： Tsutomu Higashiura ,  Takashi Akahori ,  Satoru Kawakami ,  Nobuhiro Iwama

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32183

摘要： The upper electrode (15a) and the lower electrode (15b) are installed in the chamber (2) in parallel. Between these electrodes, the upper electrode (15a) is electrically grounded. The lower electrode (15b) is connected to the first RF power generator (13) via the low-pass filter (14) and to the second RF power generator (22) via the high-pass filter (23). Wafer W is held against the upper part of the lower electrode (15b) by the high-temperature electrostatic chuck ESC. By being distributed the first and the second RF electric power from the RF power generators (13) and (22), respectively, plasma is produced near the lower electrode (15b), and the wafer W is processed by the plasma. By these procedures, plasma process apparatus with high efficiency in plasma processing and simple structure can be offered.

摘要翻译： 上电极（15A）和下电极（15b）平行地安装在腔室（2）中。 在这些电极之间，上电极（15A）电接地。 低电极（15b）经由低通滤波器（14）连接到第一RF发生器（13），经由高通滤波器（23）连接到第二RF发电机（22）。 通过高温静电卡盘ESC将晶片W保持在下电极（15b）的上部。 通过分别从RF发电机（13）和（22）分配第一和第二RF电力，在下电极（15b）附近产生等离子体，并且通过等离子体处理晶片W. 通过这些方法，可以提供等离子体处理的高效率的等离子体处理装置和简单的结构。

公开(公告)号：US06218299B1

公开(公告)日：2001-04-17

申请号：US09101244

申请日：1998-07-06

申请人： Takashi Akahori ,  Yoko Naito ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

发明人： Takashi Akahori ,  Yoko Naito ,  Shunichi Endo ,  Masahide Saito ,  Takeshi Aoki ,  Tadashi Hirata

IPC分类号： H01L2144

CPC分类号： H01L21/0212 ,  C23C16/029 ,  C23C16/26 ,  C23C16/325 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/7685 ,  H01L21/76856

摘要： For example, in a plasma processing system, C4F8 gas and C2H4 gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350° C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film 13 having an F content of, for example, 22% on silicon substrate 11. This CF film 13 has a relative dielectric constant of 2.4.

摘要翻译： 例如，在等离子体处理系统中，在压力为0.2Pa，微波功率为2.7kW的条件下，分别以60sccm和30sccm的流量将C4F8气体和C2H4气体作为成膜气体引入， 1.5kW的射频功率和350℃的晶片温度。同时，还以150sccm的流量引入等离子体气体以形成F含量例如为22％的CF膜13， 该硅膜13的相对介电常数为2.4。

公开(公告)号：US4884051A

公开(公告)日：1989-11-28

申请号：US215412

申请日：1988-07-05

申请人： Junichi Takahashi ,  Daisuke Kosaka ,  Hirotoshi Eguchi ,  Shoji Matsumoto ,  Takashi Akahori ,  Hiroshi Yamazaki ,  Kouji Izumi

发明人： Junichi Takahashi ,  Daisuke Kosaka ,  Hirotoshi Eguchi ,  Shoji Matsumoto ,  Takashi Akahori ,  Hiroshi Yamazaki ,  Kouji Izumi

IPC分类号： G01L1/18 ,  G01L5/16 ,  H01L41/04

CPC分类号： G01L5/162 ,  G01L1/18

摘要： A semiconductor diffusion type force sensing apparatus includes a plate-like semiconductor substrate formed by a single crystal material, and a plurality of sensing elements each constituted by a substantially rectangular impurity-diffused region formed in the semiconductor substrate. The sensing elements have an electric resistance variable in accordance with a deformation thereof due to an external force exerted on the semiconductor substrate. The sensing elements are arranged in a direction in which a longitudinal direction of each of the sensing elements coincides with a crystal orientation of the semiconductor substrate having an external value of a longitudinal piezoresistance coefficient of the impurity-diffused region.

摘要翻译： 半导体扩散型力感测装置包括由单晶材料形成的板状半导体衬底和多个感测元件，每个感测元件由形成在半导体衬底中的大致矩形的杂质扩散区域构成。 感测元件由于施加在半导体衬底上的外力而具有根据其变形而变化的电阻。 感测元件布置在每个感测元件的纵向方向与具有杂质扩散区域的纵向压阻系数的外部值的半导体衬底的晶体取向一致的方向上布置。

公开(公告)号：US06767829B2

公开(公告)日：2004-07-27

申请号：US10221860

申请日：2002-09-17

申请人： Takashi Akahori

发明人： Takashi Akahori

IPC分类号： H01L2144

CPC分类号： H01J37/32082 ,  C23C16/401 ,  C23C16/5096 ,  H01J37/32165 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/31633

摘要： There is provided a deposition technique wherein the amounts of eliminated F and H are small in the deposition of an insulating film, such as an SiOF film or an SiCHO film, which contains silicon, oxygen and other components and which has a lower dielectric constant than the dielectric constant of a silicon oxide film. A plasma processing system for producing plasma with the energy of a power applied between first and second electrodes which are provided in a vacuum vessel so as to face each other in parallel and which are connected to separate high-frequency power supplies, respectively, is used. An object to be processed, e.g., a semiconductor wafer is mounted on the first electrode. The frequency of the high-frequency power applied to the first electrode is set to be in the range of from 2 MHz to 9 MHz, and the frequency of the high-frequency power applied to the second electrode is set to be 50 MHz or higher, to deposit an insulating film on the wafer.

摘要翻译： 提供了一种沉积技术，其中消除的F和H的量在沉积具有硅，氧和其它组分的SiOF膜或SiCHO膜的绝缘膜的沉积中具有较小的介电常数， 氧化硅膜的介电常数。1，一种用于产生等离子体的等离子体处理系统，其具有施加在第一和第二电极之间的能量的能量，所述能量设置在真空容器中以彼此并联并且连接到单独的高 分别使用频率电源。 将待处理的物体，例如半导体晶片安装在第一电极上。 施加到第一电极的高频功率的频率设定在2MHz至9MHz的范围内，并且施加到第二电极的高频功率的频率设定为50MHz以上 以在晶片上沉积绝缘膜。

公开(公告)号：US06720659B1

公开(公告)日：2004-04-13

申请号：US09660884

申请日：2000-09-12

申请人： Takashi Akahori

发明人： Takashi Akahori

IPC分类号： H01L213213

CPC分类号： H01L21/0212 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Insulating films 21 through 24 of CF films (fluorine-contained carbon films) are formed on a substrate (not shown). In addition, Cu wiring layers 25 and 26 are formed on the CF films 21 and 23 via an adhesion layer 29 which comprises a Ti layer and a TiC layer. By forming the insulating films 21 through 24 of CF films, Cu in the wiring layers is prevented from diffusing into the insulating films 21 through 24. The relative dielectric constant of the CF film is smaller than the relative dielectric constant of a BCB film.

摘要翻译： 在基板（未示出）上形成CF膜（含氟碳膜）的绝缘膜21至24。 此外，通过包含Ti层和TiC层的粘合层29，在CF膜21和23上形成Cu布线层25和26。 通过形成CF膜的绝缘膜21〜24，防止布线层中的Cu扩散到绝缘膜21〜24中.CF膜的相对介电常数小于BCB膜的相对介电常数。

公开(公告)号：US06479897B2

公开(公告)日：2002-11-12

申请号：US09989183

申请日：2001-11-21

申请人： Takashi Akahori ,  Akira Suzuki

发明人： Takashi Akahori ,  Akira Suzuki

IPC分类号： H01L2348

CPC分类号： H01L21/32051 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/3127 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76843

摘要： A semiconductor device has a dielectric film made of a fluorine-added carbon film formed on a substrate, a metallic layer formed on the fluorine-added carbon film and an adhesive layer formed between the dielectric film and the metallic layer. The adhesive layer is made of a compound layer having carbon and the metal (or metal the same as the metal included in the metallic layer), to protect the metallic layer from being peeled-off from the fluorine-added carbon film.

公开(公告)号：US06443165B1

公开(公告)日：2002-09-03

申请号：US09101554

申请日：1998-09-21

申请人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

发明人： Takashi Akahori ,  Masaki Tozawa ,  Yoko Naito ,  Risa Nakase ,  Shuichi Ishizuka ,  Masahide Saito ,  Tadashi Hirata

IPC分类号： B08B600

CPC分类号： C23C16/4405

摘要： A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O2 gas is produced, and the C—C and C—F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O2 gas penetrates into the CF film at places where the C—C and C—F bonds have been cut, to react with C of the CF film to form CO2 which scatters. On the other hand, F scatters as F2. Thus, the CF film is removed.

摘要翻译： 一种用于等离子体处理系统的方法，其缩短了在真空容器中固化的含氟碳膜的清洁所需的时间，并且在进行清洁时保护转印台的表面。 在通过例如等离子体处理系统沉积CF膜之后，执行粘附在真空容器2中的CF膜的清洁。 在清洁中，产生了O 2气体的等离子体，并且CF膜表面上的C-C和C-F键被由等离子体产生的O的活性物质和化学切割。 在切割C-C和C-F键的地方，O 2气体渗透到CF膜中，与CF膜的C反应形成散射的CO 2。 另一方面，F分散为F2。 因此，去除CF膜。

公开(公告)号：US5386408A

公开(公告)日：1995-01-31

申请号：US089673

申请日：1993-07-07

申请人： Takashi Akahori

发明人： Takashi Akahori

IPC分类号： B41M5/26 ,  B41M5/36 ,  G11B7/00 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/006 ,  G11B7/125 ,  G11B7/24 ,  G11B7/244 ,  G11B7/245 ,  G11B7/30 ,  B41M5/30

CPC分类号： B41M5/363 ,  G11B7/0045 ,  G11B7/006 ,  G11B7/24 ,  G11B7/244 ,  G11B7/245

摘要： This optical recording medium is constructed by a substrate, a protecting film, an optical recording material layer, a light reflecting layer and a protecting layer sequentially laminated with each other. The substrate is made of a transparent material. The protecting film is made of transparent optical hardening resin. The optical recording material layer has a transparency reversibly changed in accordance with temperature. The optical recording material layer is formed by an optical recording material in which an organic low molecular substance of higher saturated fatty acid such as stearic acid or behenic acid, etc. is uniformly dispersed in a transparent resin base material composed of thermoplastic resin such as vinyl chloride resin, etc. as a high molecular compound.

摘要翻译： 该光记录介质由基板，保护膜，光记录材料层，光反射层和保护层相互叠层构成。 基板由透明材料制成。 保护膜由透明光硬化树脂制成。 光学记录材料层具有根据温度可逆地变化的透明度。 光学记录材料层由光学记录材料形成，其中较高饱和脂肪酸的有机低分子量如硬脂酸或山萮酸等均匀地分散在由热塑性树脂如乙烯基组成的透明树脂基材中 氯化物树脂等作为高分子化合物。

公开(公告)号：US4960071A

公开(公告)日：1990-10-02

申请号：US250745

申请日：1988-09-29

申请人： Takashi Akahori ,  Satoshi Nakayama

发明人： Takashi Akahori ,  Satoshi Nakayama

IPC分类号： C23C16/48 ,  C23C16/54

CPC分类号： C23C16/54 ,  C23C16/488

摘要： The present invention relates to an apparatus to form a thin film on a specimen in a chamber by introducing electromagnetic waves into the chamber through a dielectric provided on a window of the chamber and activating the material gas in the chamber, and the forming apparatus according to the present invention has such a construction that an electrode connected to a high-frequency generating source is mounted near the dielectric. Consequently, when a high frequency is applied to the electrode, self-biases are generated on the inner surface of the dielectric (the surface on the side of the specimen), the plus ions in the chamber being attracted to the inner surface to strike thereon, and the sputtering being caused on the inner surface by the incidence energy. As a result, due to the sputtering effect, the generation of a pile of films on the inner surface of the dielectric can be prevented, while in the case where films are already piled on the inner surface of the dielectric these films can be removed.