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    Method of manufacturing semiconductor device
    2.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06737350B1

    公开(公告)日：2004-05-18

    申请号：US09665960

    申请日：2000-09-21

    申请人： Takashi Akahori ,  Kouichiro Inazawa ,  Kouji Senoo ,  Masaaki Hagiwara

    发明人： Takashi Akahori ,  Kouichiro Inazawa ,  Kouji Senoo ,  Masaaki Hagiwara

    IPC分类号： H01L214763

    CPC分类号： H01L21/76832 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3127 ,  H01L21/31612 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76835 ,  H01L2221/1031 ,  H01L2221/1036

    摘要： A semiconductor device using, e.g., a fluorine containing carbon film, as an interlayer dielectric film is produced by a dual damascene method which is a simple technique. After an dielectric film, e.g., an SiO2 film 3, is deposited on a substrate 2, the SiO2 film 3 is etched to form a via hole 31 therein, and then, a top dielectric film, e.g., a CF film 4, is deposited on the top face of the SiO2 film 3. If the CF film is deposited by activating a thin-film deposition material having a bad embedded material, e.g., C6F6 gas, as a plasma, the CF film 4 can be deposited on the top face of the SiO2 film 3 while inhibiting the CF film from being embedded into the via hole 31. Subsequently, by etching the CF film 4 to form a groove 41 therein, it is possible to easily produce a dual damascene shape wherein the groove 41 is integrated with the via hole 31.

    摘要翻译： 使用例如含氟碳膜作为层间电介质膜的半导体器件通过双镶嵌法制造，这是一种简单的技术。在介质膜（例如SiO 2膜3）沉积在衬底2上之后， 对SiO 2膜3进行蚀刻以在其中形成通孔31，然后在SiO 2膜3的顶面上沉积顶部电介质膜（例如CF膜4）。如果CF膜通过激活 作为等离子体，具有不良嵌入材料（例如，C 6 F 6气体）的薄膜沉积材料可以将CF膜4沉积在SiO 2膜3的顶面上，同时抑制CF膜嵌入到通孔31中。 随后，通过蚀刻CF膜4以在其中形成凹槽41，可以容易地产生双镶嵌形状，其中凹槽41与通孔31一体化。

    Process for the production of semiconductor device
    3.
    发明授权
    Process for the production of semiconductor device 失效
    半导体器件生产工艺

    公开(公告)号：US06727182B2

    公开(公告)日：2004-04-27

    申请号：US09101308

    申请日：1998-10-15

    申请人： Takashi Akahori ,  Shuichi Ishizuka ,  Shunichi Endo ,  Takeshi Aoki ,  Tadashi Hirata

    发明人： Takashi Akahori ,  Shuichi Ishizuka ,  Shunichi Endo ,  Takeshi Aoki ,  Tadashi Hirata

    IPC分类号： H01L21302

    CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.

    摘要翻译： 本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。 在CF膜4上形成例如TiN膜41的导电膜。在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。 此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。 然而，由于TiN膜41用作掩模，因此可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4并用作互连层的一部分的粘附层。 作为掩模，可以用SiO 2等的绝缘膜代替膜。

    Method for forming a thin film
    4.
    发明授权
    Method for forming a thin film 失效
    薄膜形成方法

    公开(公告)号：US5508066A

    公开(公告)日：1996-04-16

    申请号：US305732

    申请日：1994-09-14

    申请人： Takashi Akahori

    发明人： Takashi Akahori

    IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/34 ,  C23C16/509 ,  C23C16/511 ,  H01L21/285 ,  H05H1/02

    CPC分类号： H01J37/32192 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/34 ,  C23C16/509 ,  C23C16/511 ,  H01L21/28556 ,  H01J2237/332

    摘要： In order to decompose TiCl.sub.4 to Ti and Cl completely, extremely high energy of more than 400 kcal mol.sup.-1 is required.In the method according to the present invention, use of unequilibrium plasma under reduced pressure is noticed, and it is especially noticed that in the plasma generated by resonance phenomenon, there are high energy electrons, which collide and enhance decomposition and reduction. Therefore, itis possible to form a Ti film without such high substrate temperature as 2000.degree. C., and more, to form a Tifilm with good step coverage even in a fine contact hole.

    摘要翻译： 为了完全分解TiCl4至Ti和Cl，需要超过400 kcal mol-1的极高能量。 在根据本发明的方法中，注意到在减压下使用不平衡等离子体，特别注意到在由共振现象产生的等离子体中存在高能电子，这会碰撞并增强分解和还原。 因此，可以形成不具有如此高的基板温度为2000℃的Ti膜，更可以形成即使在细小的接触孔中也具有良好的阶梯覆盖的Tifilm。

    Method for forming a thin film for a semiconductor device
    5.
    发明授权
    Method for forming a thin film for a semiconductor device 失效
    用于形成半导体器件用薄膜的方法

    公开(公告)号：US5296404A

    公开(公告)日：1994-03-22

    申请号：US779497

    申请日：1991-10-24

    申请人： Takashi Akahori ,  Akira Tanihara

    发明人： Takashi Akahori ,  Akira Tanihara

    IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/441

    CPC分类号： H01L21/76843 ,  H01L21/28556 ,  Y10S438/909

    摘要： A method for forming a thin film, comprising the steps of:generating a plasma in a plasma generation chamber by action of an electric field generated by a microwave and a magnetic field generated by an exciting coil arranged around; andintroducing the generated plasma into a reaction chamber, resulting in forming a thin film on a sample placed on a sample stage, wherein it is a chracteristic to form a metal nitride film on said sample, by introducing Ar, H.sub.2, and N.sub.2 gas into said plasma generation chamber, while introducing a metallic gas into said reaction chamber.By the method according to the present invention, it is possible to form a thin film having good Step Coverage on the contact hole, in addition, on the side wall of the contact hole a thinner film can be formed than that on the bottom. As a result, in the next step, filling in with interconnection materials can be surely performed, resulting in improving reliability of LSI devices.

    摘要翻译： 一种形成薄膜的方法，包括以下步骤：通过由微波产生的电场和由周围布置的励磁线圈产生的磁场产生等离子体产生室中的等离子体; 并将产生的等离子体引入反应室，导致在放置在样品台上的样品上形成薄膜，其特征在于在所述样品上形成金属氮化物膜，通过将Ar，H 2和N 2气体引入 所述等离子体产生室同时将金属气体引入所述反应室。 通过根据本发明的方法，可以在接触孔上形成具有良好阶跃覆盖率的薄膜，此外，在接触孔的侧壁上可以形成比底部更薄的薄膜。 结果，在下一步骤中，可以可靠地进行互连材料的填充，从而提高LSI器件的可靠性。

    Plasma processing method
    8.
    发明授权
    Plasma processing method 有权
    等离子体处理方法

    公开(公告)号：US06320154B1

    公开(公告)日：2001-11-20

    申请号：US09101504

    申请日：1999-04-27

    申请人： Takashi Akahori ,  Risa Nakase ,  Shinsuke Oka

    发明人： Takashi Akahori ,  Risa Nakase ,  Shinsuke Oka

    IPC分类号： B23K1000

    CPC分类号： H01J37/32192 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/511 ,  C23C16/52 ,  H01J2237/022

    摘要： An objective of this invention is to provide a plasma processing method that is capable of reducing particle contamination during plasma processing performed upon a semiconductor wafer. If the use of electron cyclotron resonance to generate a plasma and form a thin film of SiOF or the like is used by way of example, a sheath zone of a few mm thick is formed between the wafer and the plasma, and particles are trapped within a boundary zone between the sheath zone and the plasma. At this point, a microwave power is not dropped suddenly to zero after the film-formation processing, but is reduced to a lower level of, for example, 1 kW and is held for 10 seconds. This reduces the plasma density and thickens the sheath zone, so that particles are held away from the wafer surface. When the microwave power is subsequently cut, the particles move freely around, but only a small proportion thereof adhere to the wafer.

    摘要翻译： 本发明的目的是提供一种等离子体处理方法，其能够减少在半导体晶片上进行的等离子体处理期间的颗粒污染。 如果使用电子回旋加速器共振来产生等离子体并形成SiOF薄膜等，则在晶片和等离子体之间形成有几毫米厚的鞘层，并且颗粒被捕获在 鞘区和等离子体之间的边界区。 此时，微波功率在成膜处理后不会突然下降到零，而是降低到例如1kW的较低水平并保持10秒。 这降低了等离子体密度并增加了皮肤区域，使得颗粒被保持远离晶片表面。 当微波功率随后被切割时，颗粒自由地移动，但只有一小部分粘附在晶片上。