公开(公告)号：US20170040146A1

公开(公告)日：2017-02-09

申请号：US14817115

申请日：2015-08-03

Applicant: Lam Research Corporation

Inventor： Lihua Li HUANG ,  Hong SHIH ,  Lin XU ,  John DAUGHERTY

IPC: H01J37/32 ,  C23C14/30 ,  C23C16/30 ,  C23C14/06

CPC classification number: H01J37/32495 ,  C23C14/06 ,  C23C16/30 ,  H01J37/32119 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32642 ,  H01J37/32715

Abstract: An apparatus for use in a plasma processing chamber is provided. The apparatus comprises part body and a coating with a thickness of no more than 30 microns consisting essentially of a Lanthanide series or Group III or Group IV element in an oxyfluoride covering a surface of the part body.

Abstract translation: 提供了一种用于等离子体处理室的设备。 该装置包括部件体和厚度不超过30微米的涂层，其基本上由覆盖部件主体表面的氟氧化物中的镧系元素或III族或IV族元素组成。

公开(公告)号：US20170018408A1

公开(公告)日：2017-01-19

申请号：US14800583

申请日：2015-07-15

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Hong SHIH ,  John DAUGHERTY ,  Satish SRINIVASAN ,  Siwen LI

IPC: H01J37/32 ,  B32B38/00 ,  B32B18/00 ,  B32B37/24 ,  C01F17/00 ,  C04B35/64

CPC classification number: H01J37/32495 ,  B32B18/00 ,  B32B37/24 ,  B32B38/0008 ,  B32B2250/02 ,  B32B2307/412 ,  B32B2310/14 ,  B32B2315/02 ,  C01F17/0012 ,  C01F17/0043 ,  C01F17/0062 ,  C04B35/505 ,  C04B35/64 ,  C04B37/005 ,  C04B37/008 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/616 ,  C04B2235/785 ,  C04B2235/963 ,  C04B2235/9653 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/36 ,  C04B2237/366 ,  C04B2237/62 ,  H01J37/32009 ,  H01J37/32715

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for creating a plasma resistant part, which may be formed of a sintered nanocrystalline ceramic material comprising yttrium, oxide, and fluoride. Example parts thus made may include windows, edge rings, or injectors. In one configuration, the parts may be yttria co-sintered with alumina, which may be transparent.

Abstract translation: 根据本公开，提供了几个发明，包括用于产生等离子体抗蚀部分的装置和方法，其可以由包含钇，氧化物和氟化物的烧结纳米晶体陶瓷材料形成。 由此制成的示例部件可以包括窗口，边缘环或喷射器。 在一种构造中，这些部件可以是与氧化铝共烧结的氧化钇，氧化铝可以是透明的。

公开(公告)号：US20160379806A1

公开(公告)日：2016-12-29

申请号：US14750714

申请日：2015-06-25

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Nash W. ANDERSON ,  John DAUGHERTY ,  Thomas R. STEVENSON ,  John Michael KERNS

IPC: H01J37/32 ,  H02N13/00 ,  C23C16/06 ,  H01L21/683 ,  B32B37/12 ,  C23C16/455

CPC classification number: H01J37/32495 ,  B32B37/18 ,  B32B2311/24 ,  B32B2315/02 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01J37/32513 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H02N13/00

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for depositing plasma resistant coatings on polymer materials used in a plasma processing chamber. In a particular example, such a coating may be made on a portion of an electrostatic chuck, where the polymer material is a bead surrounding an adhesive between a chuck base and a ceramic top plate.

Abstract translation: 根据本公开，提供了若干发明，包括用于在等离子体处理室中使用的聚合物材料上沉积耐等离子体涂层的装置和方法。 在一个具体实例中，这样的涂层可以在静电卡盘的一部分上制成，其中聚合物材料是围绕卡盘基底和陶瓷顶板之间的粘合剂的珠粒。

公开(公告)号：US20230317424A1

公开(公告)日：2023-10-05

申请号：US18020213

申请日：2021-08-17

Applicant: Lam Research Corporation

Inventor： Harmeet SINGH ,  Robin KOSHY ,  Adrian RADOCEA ,  Lin XU ,  Justin Charles CANNIFF ,  Simon GOSSELIN

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01L21/67069 ,  H01J37/32467 ,  H01J37/32807 ,  H01J2237/3341 ,  H01J37/321

Abstract: A component for use in a plasma processing chamber is provided. The component comprises a component body. A plasma facing surface of the component body is adapted to face a plasma in the plasma processing chamber. The plasma facing surface comprises 1) a layer of silicon doped with a dopant wherein the dopant is at least one of carbon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 2) a layer of carbon doped with a dopant wherein the dopant is at least one of silicon, boron, tungsten, molybdenum, and tantalum, wherein the dopant has a concentration that ranges from 0.01% to 50% by mole percentage, or 3) a layer consisting essentially of boron, or 4) a layer consisting essentially of tantalum.

公开(公告)号：US20230282450A1

公开(公告)日：2023-09-07

申请号：US18011582

申请日：2021-06-24

Applicant: LAM RESEARCH CORPORATION

Inventor： Eric A. PAPE ,  Shih-Chung KON ,  Pankaj HAZARIKA ,  Lin XU

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/30

CPC classification number: H01J37/32477 ,  H01J37/32422 ,  H01J37/32357 ,  C23C16/45536 ,  C23C16/30 ,  H01J37/32816 ,  H01J2237/334 ,  C23C8/08

Abstract: A component of a processing chamber in a substrate processing system includes a base material comprising aluminum, the base material having one or more surfaces, a diffusion barrier layer formed on the surfaces of the base material, wherein the diffusion barrier layer includes magnesium and fluorine (F), and a coating formed on the surfaces. The diffusion barrier layer is arranged between the surfaces and the coating and the coating includes fluorine.

公开(公告)号：US20230215703A1

公开(公告)日：2023-07-06

申请号：US18009238

申请日：2021-06-15

Applicant: Lam Research Corporation

Inventor： Robin KOSHY ,  Lin XU ,  John DAUGHERTY

IPC: H01J37/32 ,  C23C16/04 ,  C23C16/24

CPC classification number: H01J37/32495 ,  C23C16/24 ,  C23C16/045 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32853 ,  H01J2237/334 ,  H01J2237/3321

Abstract: Sealing various machined component parts used in plasma etching chambers using an Atomic Layer Deposition (ALD) coating. By sealing the component parts with the ALD layer, surface erosion/etch caused by repeated exposure to plasma during workpiece fabrication is eliminated or significantly mitigated. As a result, unwanted particle generation, caused by erosion, is eliminated or significantly reduced, preventing contamination within the plasma etching chamber.

公开(公告)号：US20220392753A1

公开(公告)日：2022-12-08

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin XU ,  Douglas DETERT ,  John DAUGHERTY ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Nash W. ANDERSON ,  John Michael KERNS ,  Robin KOSHY ,  David Joseph WETZEL ,  Lei LIU ,  Eric A. PAPE

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US20220093370A1

公开(公告)日：2022-03-24

申请号：US17426965

申请日：2020-02-05

Applicant: Lam Research Corporation ,  Silfex, Inc.

Inventor： Lin XU ,  Satish SRINIVASAN ,  Robin KOSHY ,  Amir A. YASSERI ,  Justin TANG ,  Jie ZHANG ,  David Joseph WETZEL

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

Abstract: Textured silicon components of a semiconductor processing chamber having hillock-shaped or pyramid-shaped structures on its surface, and a method of texturing such silicon components. The silicon component can be selectively textured using chemical means to form the hillock-shaped structures to increase the surface area of the silicon component to improve polymer adhesion.

公开(公告)号：US20240212991A1

公开(公告)日：2024-06-27

申请号：US18577115

申请日：2022-08-02

Applicant: Lam Research Corporation

Inventor： Eric A. PAPE ,  David Joseph WETZEL ,  Lin XU ,  Satish SRINIVASAN ,  Robin KOSHY ,  Douglas DETERT ,  Jeremiah Michael DEDERICK

IPC: H01J37/32 ,  B05D1/02 ,  H01L21/683

CPC classification number: H01J37/32495 ,  B05D1/02 ,  H01J37/32119 ,  H01J37/32467 ,  H01J37/32715 ,  B05D2202/25 ,  B05D2203/30 ,  H01J2237/3341 ,  H01L21/6833

Abstract: A component for use in a semiconductor processing chamber is provided. A component body comprises a metallic material or ceramic material. A coating is disposed on a surface of the component body where the coating comprises a layer of yttrium aluminum oxide, the yttrium aluminum oxide layer being formed of a composition having a molar ratio of 1.0-0.9 yttrium to 1.0-1.1 aluminum over at least 90% of the yttrium aluminum oxide layer.

公开(公告)号：US20230331633A1

公开(公告)日：2023-10-19

申请号：US18247724

申请日：2021-11-03

Applicant: Lam Research Corporation

Inventor： Lin XU ,  Harmeet SINGH ,  Pankaj HAZARIKA ,  Satish SRINIVASAN ,  Robin KOSHY

IPC: C04B35/565 ,  H01J37/32 ,  C04B35/64

CPC classification number: C04B35/565 ,  H01J37/32642 ,  H01J37/3244 ,  C04B35/64 ,  H01J2237/334 ,  C04B2235/3826 ,  C04B2235/3821 ,  C04B2235/612 ,  C04B2235/666 ,  C04B2235/9669

Abstract: A method for making a component for use in a plasma processing chamber is provided. A non-oxide silicon containing powder composition is placed in a mold, wherein the non-oxide silicon containing powder composition consists essentially of a non-oxide silicon containing powder and at least one of a B or B4C dopant. The non-oxide silicon containing powder composition is subjected to spark plasma sintering (SPS) to form a spark plasma sintered component. The spark plasma sintered component is machined into a plasma processing chamber component.