利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

50 条记录 (耗时 0.034 秒)

    Nanostructured photodiode
    11.
    发明授权
    Nanostructured photodiode 失效
    纳米结构光电二极管

    公开(公告)号：US08692301B2

    公开(公告)日：2014-04-08

    申请号：US13062018

    申请日：2009-09-04

    申请人： Lars Samuelson ,  Federico Capasso ,  Jonas Ohlsson

    发明人： Lars Samuelson ,  Federico Capasso ,  Jonas Ohlsson

    IPC分类号： H01L33/00 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H01L31/03529 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/50

    摘要： The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).

    摘要翻译： 本发明提供了一种光电二极管，其包括至少部分地由具有相反导电类型的半导体材料制成的第一和第二区域（2）形成的pin或pn结，其中pin或pn结包括用于产生 电荷载体从吸收的光。 p-i-n或pn结的一个部分由一个或多个间隔开并布置成收集在光吸收区域（11）中产生的电荷载流子的纳米线（7）构成。 提供在纳米线（7）与所述第一区域（1）和所述第二区域（2）中的一个之间的由低掺杂或本征半导体材料制成的至少一个低掺杂区域（10）使定制的光吸收区域和/或 活动区域（9）的雪崩倍增区域。

    Outer loop transmit power control in wireless communication systems
    12.
    发明授权
    Outer loop transmit power control in wireless communication systems 有权
    无线通信系统中的外环发射功率控制

    公开(公告)号：US08265681B2

    公开(公告)日：2012-09-11

    申请号：US12044185

    申请日：2008-03-07

    申请人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

    发明人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

    IPC分类号： H04B7/185 ,  H04B7/00 ,  H04B1/00 ,  H04B17/00 ,  H04B1/38 ,  H04B15/00 ,  H04W4/00 ,  H04K1/02 ,  H04L27/10

    CPC分类号： H04W52/12 ,  H04B2201/709727 ,  H04W52/20 ,  H04W52/241

    摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.

    摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。

    System and method for performing timing updates in a mobile device
    14.
    发明授权
    System and method for performing timing updates in a mobile device 有权
    用于在移动设备中执行定时更新的系统和方法

    公开(公告)号：US08843136B2

    公开(公告)日：2014-09-23

    申请号：US12141589

    申请日：2008-06-18

    申请人： Jonas Ohlsson ,  Simon Hultgren ,  Olof Torstensson

    发明人： Jonas Ohlsson ,  Simon Hultgren ,  Olof Torstensson

    IPC分类号： H04W36/18 ,  H04W56/00 ,  H04W48/20 ,  H04B7/26

    CPC分类号： H04B7/2684 ,  H04W36/18 ,  H04W56/0045

    摘要： In a mobile communications network, drifts in timing of user equipment in soft handover may be accounted for by measuring the offset between the current timing of the user equipment and the first significant path of downlink frames from cells of the active set at first and second instances. Differences in the respective offsets from the first and second instances may be calculated to determine if the drift is unidirectional in time for all cells of the active set. A unidirectional drift in the offsets is indicative of a drift in timing of the user equipment, allowing the current timing to be momentarily unfrozen and updated.

    摘要翻译： 在移动通信网络中，软切换中的用户设备的定时漂移可以通过在第一和第二实例中测量用户设备的当前定时与来自活动集的小区的下行链路帧的第一有效路径之间的偏移来考虑 。 可以计算与第一和第二实例的各个偏移量的差异，以确定活动集合的所有单元的漂移是否是单向的。 偏移中的单向漂移表示用户设备的定时漂移，允许当前定时被暂时解冻和更新。

    METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE
    16.
    发明申请
    METHOD FOR MANUFACTURING A NANOWIRE STRUCTURE 有权
    制造纳米结构的方法

    公开(公告)号：US20130203242A1

    公开(公告)日：2013-08-08

    申请号：US13518259

    申请日：2010-12-22

    申请人： Lars Samuelson ,  Knut Deppert ,  Jonas Ohlsson ,  Martin Magnusson

    发明人： Lars Samuelson ,  Knut Deppert ,  Jonas Ohlsson ,  Martin Magnusson

    IPC分类号： H01L21/02 ,  B03C7/00

    CPC分类号： H01L29/0669 ,  B03C7/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02 ,  H01L21/0257 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02628 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/66136 ,  H01L29/66143 ,  H01L31/035227 ,  H01L31/068 ,  H01L31/072 ,  H01L31/18

    摘要： The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires (1) and applying an electrical field (E) over the population of nanowires (1), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate (2). The electrical field can be utilised in the deposition. Pn-junctions or any net charge introduced in the nanowires (1) may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

    摘要翻译： 本发明提供了一种用于对准纳米线的方法，其可用于制造包含纳米线的器件，所述纳米线在其布置在其上的衬底上独立地具有明确且受控的取向。 该方法包括以下步骤：在纳米线（1）群上提供纳米线（1）和施加电场（E），由此纳米线的电偶极矩使得它们沿着电场（E）排列。 优选地，在提供和对准的步骤期间，纳米线分散在流体中。 当对准时，可以将纳米线固定，优选沉积在基底（2）上。 电场可用于沉积。 在纳米线（1）中引入的Pn结或任何净电荷可能有助于对准和沉积过程。 该方法适用于连续加工，例如 在卷对卷方法中，几乎适用于任何基底材料，不限于适用于颗粒辅助生长的基底。

    Elevated LED
    17.
    发明申请
    Elevated LED 审中-公开
    高架LED

    公开(公告)号：US20130001511A1

    公开(公告)日：2013-01-03

    申请号：US13539918

    申请日：2012-07-02

    申请人： Bo Pedersen ,  Lars Samuelson ,  Jonas Ohlsson ,  Patrik Svensson

    发明人： Bo Pedersen ,  Lars Samuelson ,  Jonas Ohlsson ,  Patrik Svensson

    IPC分类号： H01L33/24

    CPC分类号： H01L33/24 ,  B82Y20/00 ,  H01L33/18 ,  H01L33/20 ,  Y10S977/762

    摘要： The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.

    摘要翻译： 本发明涉及包含至少一个纳米线的发光二极管。 根据本发明的LED是具有从衬底突出的纳米线的直立纳米结构。 直径大于纳米线的灯泡与纳米线连接并且在与衬底相关的升高位置处布置。 通过灯泡和纳米线的组合形成pn结，得到有源区域以产生光。

    Outer Loop Transmit Power Control in Wireless Communication Systems
    18.
    发明申请
    Outer Loop Transmit Power Control in Wireless Communication Systems 有权
    无线通信系统中的外环发射功率控制

    公开(公告)号：US20120302279A1

    公开(公告)日：2012-11-29

    申请号：US13569290

    申请日：2012-08-08

    申请人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

    发明人： Xiaohui Wang ,  Jonas Ohlsson ,  Magnus Öst

    IPC分类号： H04W52/20 ,  H04W52/12

    CPC分类号： H04W52/12 ,  H04B2201/709727 ,  H04W52/20 ,  H04W52/241

    摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.

    摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。

    Nanostructured memory device
    19.
    发明授权
    Nanostructured memory device 失效
    纳米结构存储器件

    公开(公告)号：US08212237B2

    公开(公告)日：2012-07-03

    申请号：US13003046

    申请日：2009-07-02

    申请人： Lars Samuelson ,  Claes Thelander ,  Jonas Ohlsson ,  Anders Mikkelsen

    发明人： Lars Samuelson ,  Claes Thelander ,  Jonas Ohlsson ,  Anders Mikkelsen

    IPC分类号： H01L31/00

    CPC分类号： H01L29/7881 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/803 ,  Y10S977/938

    摘要： The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire (3) forming a current transport channel, one or more shell layers (4) arranged around at least a portion of the nanowire (3), and nano-sized charge trapping centers (10) embedded in said one or more shell layers (4), and one or more gate electrodes (14) arranged around at least a respective portion of said one or more shell layers (4). Preferably said one or more shell layers (4) are made of a wide band gap material or an insulator. The charge trapping centers (10) may be charged/written by using said one or more gate electrodes (14) and a change in an amount of charge stored in one or more of the charge trapping centers (10) alters the conductivity of the nanowire (3).

    摘要翻译： 本发明提供一种纳米结构存储器件，其包括形成电流传输沟道的至少一个半导体纳米线（3），围绕至少一部分纳米线（3）布置的一个或多个壳层（4）和纳米尺寸的电荷俘获 嵌入在所述一个或多个壳层（4）中的中心（10）以及围绕至少所述一个或多个壳层（4）的相应部分布置的一个或多个栅电极（14）。 优选地，所述一个或多个壳层（4）由宽带隙材料或绝缘体制成。 可以通过使用所述一个或多个栅电极（14）对电荷捕获中心（10）进行充电/写入，并且存储在一个或多个电荷捕获中心（10）中的电荷量的变化改变了纳米线的导电性 （3）。