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公开(公告)号：US20100252808A1
公开(公告)日：2010-10-07
申请号：US12734252
申请日：2008-10-27
CPC分类号： H01L29/0665 , B81C1/00111 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02538 , H01L21/02609 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L33/18 , Y10S438/946 , Y10S438/974 , Y10S977/721 , Y10S977/762 , Y10S977/815 , Y10S977/89 , Y10S977/949
摘要： The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
摘要翻译： 本发明涉及在Si衬底（3）上III-V族半导体纳米线（2）的生长。 受控的垂直纳米线生长通过在纳米线生长之前采取的步骤来实现，将III族或V族原子提供给Si衬底的（111）表面以提供III族或V 5族表面终止 （4）。 还提出了纳米结构的器件，其包括以符合预定的器件布局的有序图案生长在Si衬底（3）的（111）表面上并从其突出的多个对准的III-V半导体纳米线（2）。
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公开(公告)号：US09012887B2
公开(公告)日：2015-04-21
申请号：US13279786
申请日：2011-10-24
CPC分类号： H01L29/0665 , B81C1/00111 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02538 , H01L21/02609 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L33/18 , Y10S438/946 , Y10S438/974 , Y10S977/721 , Y10S977/762 , Y10S977/815 , Y10S977/89 , Y10S977/949
摘要： The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
摘要翻译： 本发明涉及在Si衬底（3）上III-V族半导体纳米线（2）的生长。 控制的垂直纳米线生长通过在纳米线生长之前采取的步骤来实现，其将III族或V族原子提供给Si衬底的（111）表面以提供III族或V 5族表面终止 （4）。 还提出了纳米结构的器件，其包括依照预定的器件布局以有序图案生长在Si衬底（3）的（111）表面上并从其突出的多个对准的III-V半导体纳米线（2）。
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公开(公告)号：US08227817B2
公开(公告)日：2012-07-24
申请号：US12520125
申请日：2007-12-22
申请人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
发明人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/18 , H01L33/20 , Y10S977/762
摘要： The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
摘要翻译： 本发明涉及包含至少一个纳米线的发光二极管。 根据本发明的LED是具有从衬底突出的纳米线的直立纳米结构。 直径大于纳米线的灯泡与纳米线连接并且在与衬底相关的升高位置处布置。 通过灯泡和纳米线的组合形成pn结，得到有源区域以产生光。
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公开(公告)号：US20120145990A1
公开(公告)日：2012-06-14
申请号：US13279786
申请日：2011-10-24
IPC分类号： H01L33/18 , H01L29/267 , H01L21/205
CPC分类号： H01L29/0665 , B81C1/00111 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02538 , H01L21/02609 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L33/18 , Y10S438/946 , Y10S438/974 , Y10S977/721 , Y10S977/762 , Y10S977/815 , Y10S977/89 , Y10S977/949
摘要： The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device comprising a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.
摘要翻译： 本发明涉及在Si衬底（3）上III-V族半导体纳米线（2）的生长。 控制的垂直纳米线生长通过在纳米线生长之前采取的步骤来实现，其将III族或V族原子提供给Si衬底的（111）表面以提供III族或V 5族表面终止 （4）。 还提出了纳米结构的器件，其包括以符合预定的器件布局的有序图案生长在Si衬底（3）的（111）表面上并从其突出的多个对准的III-V半导体纳米线（2）。
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公开(公告)号：US09318655B2
公开(公告)日：2016-04-19
申请号：US13539918
申请日：2012-07-02
申请人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
发明人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/18 , H01L33/20 , Y10S977/762
摘要： The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
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公开(公告)号：US20100148149A1
公开(公告)日：2010-06-17
申请号：US12520125
申请日：2007-12-22
申请人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
发明人： Bo Pedersen , Lars Samuelson , Jonas Ohlsson , Patrik Svensson
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/18 , H01L33/20 , Y10S977/762
摘要： The present invention relates to light emitting diodes comprising at least one nanowire. The LED according to the invention is an upstanding nanostructure with the nanowire protruding from a substrate. A bulb with a larger diameter than the nanowire is arranged in connection to the nanowire and at an elevated position with regards to the substrate. A pn-junction is formed by the combination of the bulb and the nanowire resulting in an active region to produce light.
摘要翻译： 本发明涉及包含至少一个纳米线的发光二极管。 根据本发明的LED是具有从衬底突出的纳米线的直立纳米结构。 与纳米线相比，直径大于该纳米线的灯泡与衬底相关联地布置在升高的位置。 通过灯泡和纳米线的组合形成pn结，得到有源区域以产生光。
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公开(公告)号：US11360083B2
公开(公告)日：2022-06-14
申请号：US15327971
申请日：2015-07-22
申请人： Heiner Linke , Alf Månsson , Christelle Prinz , Jonas Ohlsson , Cassandra Niman , Mercy Lard , Aleksandra Dabkowska , Nicklas Anttu
发明人： Heiner Linke , Alf Månsson , Christelle Prinz , Jonas Ohlsson , Cassandra Niman , Mercy Lard , Aleksandra Dabkowska , Nicklas Anttu
IPC分类号： G01N33/543 , G01N21/64 , G01N21/77 , B01L3/00 , G01N33/542 , B82Y15/00
摘要： A nanowire molecular sensor, and a molecular detection system, comprising a nanowire waveguide (30), a nanowire sidewall (51) functionalized in order to attach a molecule (54), and light emissive point sources (52), wherein the amount of light emitted at an end (53) of the waveguide is dependent of the amount of specific molecules attached to the sidewall of the nanowire. A method employing said sensor may be used for single cell detection and analysis.
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公开(公告)号：US09947829B2
公开(公告)日：2018-04-17
申请号：US13805273
申请日：2011-06-27
申请人： Jonas Ohlsson
发明人： Jonas Ohlsson
IPC分类号： H01L33/12 , B82Y10/00 , H01L29/06 , H01L33/18 , H01L21/02 , B82Y20/00 , B82Y40/00 , H01L33/00 , H01L33/06 , H01L33/08 , H01L33/24 , B82Y99/00
CPC分类号： H01L33/12 , B82Y10/00 , B82Y20/00 , B82Y40/00 , B82Y99/00 , H01L21/0237 , H01L21/02439 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L29/0665 , H01L29/0676 , H01L29/0684 , H01L33/007 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , Y10S977/762
摘要： The present invention provides a substrate (1) with a bulk layer (3) and a buffer layer (4) having a thickness of less than 2 μm arranged on the bulk layer (3) for growth of a multitude of nanowires (2) oriented in the same direction on a surface (5) of the buffer layer (4). A nanowire structure, a nanowire light emitting diode comprising the substrate (1) and a production method for fabricating the nanowire structure is also provided. The production method utilizes non-epitaxial methods for forming the buffer layer (4).
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公开(公告)号：US08692301B2
公开(公告)日：2014-04-08
申请号：US13062018
申请日：2009-09-04
申请人： Lars Samuelson , Federico Capasso , Jonas Ohlsson
发明人： Lars Samuelson , Federico Capasso , Jonas Ohlsson
IPC分类号： H01L33/00 , H01L31/062 , H01L31/113
CPC分类号： H01L31/03529 , H01L31/105 , H01L31/1075 , Y02E10/50
摘要： The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).
摘要翻译： 本发明提供了一种光电二极管，其包括至少部分地由具有相反导电类型的半导体材料制成的第一和第二区域（2）形成的pin或pn结，其中pin或pn结包括用于产生 电荷载体从吸收的光。 p-i-n或pn结的一个部分由一个或多个间隔开并布置成收集在光吸收区域（11）中产生的电荷载流子的纳米线（7）构成。 提供在纳米线（7）与所述第一区域（1）和所述第二区域（2）中的一个之间的由低掺杂或本征半导体材料制成的至少一个低掺杂区域（10）使定制的光吸收区域和/或 活动区域（9）的雪崩倍增区域。
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公开(公告)号：US08265681B2
公开(公告)日：2012-09-11
申请号：US12044185
申请日：2008-03-07
申请人： Xiaohui Wang , Jonas Ohlsson , Magnus Öst
发明人： Xiaohui Wang , Jonas Ohlsson , Magnus Öst
IPC分类号： H04B7/185 , H04B7/00 , H04B1/00 , H04B17/00 , H04B1/38 , H04B15/00 , H04W4/00 , H04K1/02 , H04L27/10
CPC分类号： H04W52/12 , H04B2201/709727 , H04W52/20 , H04W52/241
摘要： Outer-loop power control methods and apparatus are disclosed. In an exemplary embodiment, a short-term block error rate is measured for a received signal, and a coarse adjustment to a target signal-to-interference ratio (SIR) is calculated as a function of the short-term block error rate, a target block error rate, and a first loop tuning parameter. In some embodiments, a fine adjustment to the target SIR is also calculated, as a function of a smoothed block error rate, the target block error rate, and a second loop tuning parameter. The coarse adjustment provides quick responsiveness to received block errors, while the fine adjustment moderates the coarse adjustments by accounting for a longer-term view of the received block error rate. The target SIR adjustments disclosed herein may be computed in each of several iterations of an outer-loop power control loop.
摘要翻译： 公开了外环功率控制方法和装置。 在示例性实施例中，针对接收信号测量短期块错误率，并且根据短期块错误率计算对目标信号干扰比（SIR）的粗略调整， 目标块错误率和第一个循环调整参数。 在一些实施例中，还根据平滑的块错误率，目标块错误率和第二环路调整参数来计算对目标SIR的精细调整。 粗略调整提供对接收到的块错误的快速响应，而微调通过考虑接收到的块错误率的长期视图来缓和粗调。 可以在外环功率控制回路的几次迭代中的每一个中计算本文公开的目标SIR调整。
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