公开(公告)号：US20030017720A1

公开(公告)日：2003-01-23

申请号：US09908891

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Jay A. Curless ,  Lyndee L. Hilt

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer has lattice registry to both the underlying silicon wafer and the overlying monocrystalline material layer. Formation of a compliant substrate preferably includes utilizing enhanced epitaxy of a surfactant template layer. The surfactant template layer may be formed by depositing an organometallic compound on the accommodating buffer layer using atomic layer epitaxy. In certain preferred embodiments, the organometallic compound is an aluminum-containing compound.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层具有与底层硅晶片和上覆单晶材料层两者的晶格注册。 顺应性底物的形成优选包括利用表面活性剂模板层的增强的外延。 可以通过使用原子层外延在容纳缓冲层上沉积有机金属化合物来形成表面活性剂模板层。 在某些优选实施方案中，有机金属化合物是含铝化合物。

公开(公告)号：US20030015731A1

公开(公告)日：2003-01-23

申请号：US09910020

申请日：2001-07-23

Applicant: Motorola, Inc.

Inventor： Jay A. Curless ,  Lyndee L. Hilt ,  Albert A. Talin

IPC: H01L031/109

CPC classification number: H01L21/31691 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: Process for fabricating a semiconductor structure (34), and the resulting products, having reduced crystal defects and/or contamination in a monocrystalline compound semiconductor layer (26) that is compliantly attached to a monocrystalline semiconductor substrate (22) via an accommodating buffer layer (36), a capping/template layer (30), and a thin monocrystalline compound semiconductor seed film (38) comprised of a compound semiconductor, in that order from furthest to closest to layer (26). To accomplish this, a thin monocrystalline compound semiconductor seed film (38) is formed on an intermediate structure (33) including a monocrystalline perovskite buffer layer (24) and an overlying capping/template layer (30), and the resulting structure (33) is annealed at a temperature effective to reduce crystal defects in the compound semiconductor seed film (38), and optionally also may be used to amorphize the monocrystalline perovskite layer, all before a compound semiconductor layer (26) is formed thereon in a device-thickness.

Abstract translation: 制造半导体结构（34）的方法以及所得产品具有通过容纳缓冲层顺应地附接到单晶半导体衬底（22）的单晶化合物半导体层（26）中具有减小的晶体缺陷和/或污染 36），封盖/模板层（30）和由化合物半导体构成的薄单晶化合物半导体种子膜（38），其从最远到最靠近层（26）的顺序。 为了实现这一点，在包括单晶钙钛矿缓冲层（24）和上覆盖/模板层（30）的中间结构（33）上形成薄单晶化合物半导体种子膜（38），所得结构（33） 在有效地减少化合物半导体种子膜（38）中的晶体缺陷的温度下进行退火，并且任选地还可以将其用于非晶化单晶钙钛矿层，所有这些都是在其上形成化合物半导体层（26）之前的器件厚度 。

公开(公告)号：US20030015711A1

公开(公告)日：2003-01-23

申请号：US09908892

申请日：2001-07-20

Applicant: Motorola, Inc.

Inventor： Albert A. Talin ,  Lyndee L. Hilt ,  Alexander A. Demkov

IPC: H01L029/04

CPC classification number: H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate includes utilizing an intermetallic layer of an intermetallic compound material.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成包括利用金属间化合物材料的金属间化合物层。

公开(公告)号：US20020060317A1

公开(公告)日：2002-05-23

申请号：US09740219

申请日：2000-12-18

Applicant: Motorola, Inc.

Inventor： Jamal Ramdani ,  Lyndee L. Hilt

IPC: H01L029/06 ,  H01L031/0328 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109

CPC classification number: H01L21/02381 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  Y10T29/41

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer, in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 然后在容纳缓冲层上形成晶格常数随着层的厚度变化的单晶梯度层，使得渐变层的顶部的晶格常数与随后生长的单晶膜的晶格常数基本一致 。

公开(公告)号：US20040150003A1

公开(公告)日：2004-08-05

申请号：US10767996

申请日：2004-02-02

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Einsebeiser

IPC: H01L031/0328 ,  H01L031/0336 ,  H01L031/072 ,  H01L031/109

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US20040149202A1

公开(公告)日：2004-08-05

申请号：US10767994

申请日：2004-02-02

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US20030019423A1

公开(公告)日：2003-01-30

申请号：US09911702

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Lyndee L. Hilt

IPC: C30B025/00 ,  H01L029/76 ,  H01L031/036 ,  C30B028/12 ,  H01L021/30 ,  H01L021/46 ,  C30B028/14 ,  H01L031/112 ,  C30B023/00

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers or compound semiconductor wafers by forming a compliant substrate for growing the monocrystalline layers. In particular, a compliant large area GaN substrate can be fabricated for forming semiconductor structures and devices. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant large area GaN substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials and the resulting large area GaN substrate may be formed as a defect free stand alone substrate.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长成覆盖在单晶衬底例如大硅晶片或化合物半导体晶片上。 特别地，可以制造适应性大面积的GaN衬底，用于形成半导体结构和器件。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性大面积GaN衬底的形成可以包括利用表面活性剂增强的外延，单晶硅在单晶氧化物上的外延生长以及Zintl相材料的外延生长，并且所得到的大面积GaN衬底可以形成为无缺陷的 独立底物。

公开(公告)号：US20030017661A1

公开(公告)日：2003-01-23

申请号：US09910018

申请日：2001-07-23

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Albert A. Talin ,  Barbara F. Barenburg ,  Lyndee L. Hilt

IPC: H01L021/337

CPC classification number: H01L21/268 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: Semiconductor structures are provided with high quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates such as large silicon wafers utilizing a compliant substrate. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and an overlying monocrystalline material layer. With laser assisted fabrication, a laser energy source is used to preclean the accommodating buffer layer, to excite the accommodating buffer layer to higher energy to promote two-dimensional growth, and to amorphize the accommodating buffer layer, without requiring transport of the semiconductor structure from one environment to another. When chemical vapor deposition is utilized, the laser radiation source can also be employed to crack volatile chemical precursors and to enable selective deposition.

Abstract translation: 半导体结构设置有在单晶衬底上生长的单晶材料的高质量外延层，例如使用顺应衬底的大硅晶片。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层与下面的硅晶片和上覆单晶材料层晶格匹配。 通过激光辅助制造，使用激光能量源来清除容纳缓冲层，将容纳缓冲层激发到更高的能量以促进二维生长，并使收容缓冲层非晶化，而不需要将半导体结构从 一个环境到另一个环境。 当使用化学气相沉积时，也可以使用激光辐射源来破坏挥发性化学前体并实现选择性沉积。

公开(公告)号：US20030017626A1

公开(公告)日：2003-01-23

申请号：US09909941

申请日：2001-07-23

Applicant: MOTOROLA INC.

Inventor： Lyndee L. Hilt ,  Jay A. Curless ,  Paige M. Holm

IPC: H01L021/00 ,  H01L021/336

CPC classification number: C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02658

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The strain relief provided by the amorphous interface layer reduces the amount of defects, such as dislocations, occurring in the semiconductor structure and allows a higher crystalline quality to be obtained. The propagation of dislocations can further be controlled by applying a strain controlling element to the semiconductor structure. The strain controlling element may include a distorting material applied to the substrate and having a different thermal property than the substrate so that the distorting material can induce a strain in the semiconductor structure to compensate for strain induced in the semiconductor structure during its manufacture. The strain controlling element may also include a pattern growth for controlling the location of dislocations in the semiconductor structure.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 由非晶界面层提供的应变消除减少在半导体结构中发生的诸如位错的缺陷的量，并且允许获得更高的结晶质量。 通过向半导体结构施加应变控制元件可以进一步控制位错的传播。 应变控制元件可以包括施加到衬底上并且具有与衬底不同的热性能的变形材料，使得变形材料可以在半导体结构中引起应变以补偿在其制造期间在半导体结构中诱发的应变。 应变控制元件还可以包括用于控制半导体结构中位错位置的图案生长。

公开(公告)号：US20030013223A1

公开(公告)日：2003-01-16

申请号：US09904892

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Lyndee L. Hilt

IPC: H01L021/00

CPC classification number: H01L21/02488 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02546 ,  H01L33/007 ,  H01L33/12 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/32366 ,  H01S2301/173

Abstract: High quality epitaxial layers of monocrystalline III-V arsenide nitride materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline III-V arsenide nitride material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, an accommodating buffer layer comprising a barium strontium titanium oxide and a monocrystalline III-V arsenide nitride layer, such as GaAsN, having a nitrogen concentration ranging from 1-5% function to further reduce any lattice mismatch between layers.

Abstract translation: 可以通过形成用于生长单晶层的顺应性衬底，将单晶III-V族砷化物材料的高质量外延层生长成覆盖在单晶衬底例如大硅晶片上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶III-V族氮化物材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，包含钡锶钛氧化物和氮化钠浓度范围为1-5％的GaAsN单晶III-V砷化物氮化物层的容纳缓冲层起作用，以进一步减少层之间的任何晶格失配。