Method of forming a gate stack containing a gate dielectric layer having reduced metal content
    13.
    发明授权
    Method of forming a gate stack containing a gate dielectric layer having reduced metal content 失效
    形成包含具有降低的金属含量的栅极电介质层的栅极堆叠的方法

    公开(公告)号:US07470591B2

    公开(公告)日:2008-12-30

    申请号:US11239321

    申请日:2005-09-30

    IPC分类号: H01L21/00

    摘要: A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.

    摘要翻译: 提供了一种用于降低金属含量并控制栅叠层中的栅介质层的金属深度分布的方法。 该方法包括在处理室中提供衬底,在衬底上沉积栅极电介质层,其中栅极电介质层包括金属元素。 从栅介质层的至少一部分选择性地蚀刻金属元件,以形成具有降低的金属含量的蚀刻栅极电介质层,并且在蚀刻的栅极介电层上形成栅极电极层。

    Method for monitoring status of system components
    14.
    发明授权
    Method for monitoring status of system components 有权
    监控系统组件状态的方法

    公开(公告)号:US08460945B2

    公开(公告)日:2013-06-11

    申请号:US10673513

    申请日:2003-09-30

    IPC分类号: H01L21/00

    摘要: A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.

    摘要翻译: 提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。 该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。 该方法可以在可以包括室清洁过程,室调节过程,基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。 系统组件可以是消耗系统部件,例如处理管,屏蔽,环,挡板和衬垫,并且还可以包含保护涂层。

    Method and processing system for monitoring status of system components
    15.
    发明授权
    Method and processing system for monitoring status of system components 有权
    监控系统组件状态的方法和处理系统

    公开(公告)号:US07479454B2

    公开(公告)日:2009-01-20

    申请号:US10674703

    申请日:2003-09-30

    IPC分类号: H01L21/302

    摘要: A method and system for monitoring status of a system component during a process. The method includes exposing a system component to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component. Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, an injector, a substrate holder, a liner, a pedestal, a cap cover, an electrode, and a heater, any of which can further include a protective coating. The processing system includes the system component in a process chamber, a gas injection system for introducing the reactant gas, a chamber protection system for monitoring the status of the system component, and a controller for controlling the processing system in response to the status.

    摘要翻译: 一种在过程中监视系统组件的状态的方法和系统。 该方法包括在过程期间将系统组分暴露于反应气体,其中反应气体能够蚀刻系统组分材料以形成侵蚀产物,并且在该过程期间监测侵蚀产物的释放以确定系统部件的状态 。 可以监测的方法包括室清洁过程,室调节过程,基板蚀刻工艺和基板成膜工艺。 系统组件可以是消耗系统部件,例如处理管,屏蔽件,环,挡板,注射器,衬底保持器,衬垫,基座,帽盖,电极和加热器 其可以进一步包括保护涂层。 处理系统包括处理室中的系统部件,用于引入反应气体的气体注入系统,用于监视系统部件的状态的室保护系统以及响应于状态来控制处理系统的控制器。

    Method for fabricating a semiconductor device
    16.
    发明授权
    Method for fabricating a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US07393761B2

    公开(公告)日:2008-07-01

    申请号:US11045124

    申请日:2005-01-31

    IPC分类号: H01L21/322

    摘要: A method for treating a gate stack in the fabrication of a semiconductor device by providing a substrate containing a gate stack having a dielectric layer formed on the substrate and a metal-containing gate electrode layer formed on the high-k dielectric layer, forming low-energy excited dopant species from a process gas in a plasma, and exposing the gate stack to the excited dopant species to incorporate a dopant into the gate stack. The method can be utilized to tune the workfunction of the gate stack.

    摘要翻译: 一种在制造半导体器件中处理栅叠层的方法,其特征在于,提供一种基板,该基板含有形成在基板上的电介质层的栅叠层和形成在高k电介质层上的含金属的栅电极层, 来自等离子体中的工艺气体的能量激发的掺杂剂物质,并且将栅极堆叠暴露于激发的掺杂物种类以将掺杂剂掺入到栅极堆叠中。 该方法可用于调整栅极堆叠的功能。

    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
    17.
    发明申请
    Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation 失效
    使用多频电磁辐射增加薄膜拉伸应力的方法和系统

    公开(公告)号:US20060226518A1

    公开(公告)日:2006-10-12

    申请号:US11091755

    申请日:2005-03-29

    摘要: A method and system are described for increasing the tensile stress in thin films formed on a substrate, such as silicon nitride films. The thin film may be a planar film, or a non-planar film, such as a nitride film formed over a NMOS gate. The thin film is exposed to electromagnetic (EM) radiation, such as EM radiation having a wavelength component less than about 500 nm. The EM source can include a multi-frequency source of radiation. Additionally, the source of radiation is collimated in order to selectively treat regions of a non-planar film.

    摘要翻译: 描述了一种用于增加在诸如氮化硅膜之类的衬底上形成的薄膜中的拉伸应力的方法和系统。 薄膜可以是平面薄膜,或非平面薄膜,例如在NMOS栅极上形成的氮化物薄膜。 该薄膜暴露于电磁(EM)辐射,例如波长分量小于约500nm的EM辐射。 EM源可以包括多频辐射源。 另外,为了选择性地处理非平面膜的区域,准直辐射源。

    Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatment
    18.
    发明授权
    Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatment 失效
    通过等离子体处理改善CVD钽和氮化钽调制膜的附着力和耐久性的方法

    公开(公告)号:US06500761B1

    公开(公告)日:2002-12-31

    申请号:US10000548

    申请日:2001-10-24

    IPC分类号: H01L2144

    摘要: A method for forming modulated tantalum/tantalum nitride diffusion barrier stacks on semiconductor device substrates used in interconnect structures. Alternating layers of tantalum and tantalum nitride are deposited onto the semiconductor device substrate by chemical vapor deposition from a tantalum pentafluoride precursor vapor, with intermittent ammonia plasma treatment of the tantalum and tantalum nitride such that each tantalum layer and each tantalum nitride layer are treated at least once to thereby reduce the evolution of HF gas, thereby improving the adhesion and durability of the film stacks during subsequent elevated temperature processing.

    摘要翻译: 用于在互连结构中使用的半导体器件衬底上形成调制的钽/氮化钽扩散阻挡层的方法。 钽和氮化钽的交替层通过来自五氟化钽前驱体蒸气的化学气相沉积沉积到半导体器件衬底上,并对钽和氮化钽进行间歇氨等离子体处理,使得每个钽层和每个氮化钽层至少被处理 一次,从而减少HF气体的演变,从而提高膜叠层在随后的高温处理过程中的粘合性和耐久性。