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    III-NITRIDE FLIP-CHIP SOLAR CELLS
    14.
    发明申请
    III-NITRIDE FLIP-CHIP SOLAR CELLS 审中-公开
    III-NITRIDE FLIP-CHIP太阳能电池

    公开(公告)号：US20120180868A1

    公开(公告)日：2012-07-19

    申请号：US13279131

    申请日：2011-10-21

    申请人： Robert M. Farrell ,  Carl J. Neufeld ,  Nikholas G. Toledo ,  Steven P. DenBaars ,  Umesh K. Mishra ,  James S. Speck ,  Shuji Nakamura

    发明人： Robert M. Farrell ,  Carl J. Neufeld ,  Nikholas G. Toledo ,  Steven P. DenBaars ,  Umesh K. Mishra ,  James S. Speck ,  Shuji Nakamura

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/02363 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

    摘要： A III-nitride photovoltaic device structure and method for fabricating the III-nitride photovoltaic device that increases the light collection efficiency of the III-nitride photovoltaic device. The III-nitride photovoltaic device includes one or more III-nitride device layers, and the III-nitride photovoltaic device functions by collecting light that is incident on the back-side of the III-nitride device layers. The III-nitride device layers are grown on a substrate, wherein the III-nitride device layers are exposed when the substrate is removed and the exposed III-nitride device layers are then intentionally roughened to enhance their light collection efficiency. The collection of the incident light via the back-side of the device simplifies the fabrication of the multiple junctions in the device. The III-nitride photovoltaic device may include grid-like contacts, transparent or semi-transparent contacts, or reflective contacts.

    摘要翻译： 用于制造III族氮化物光伏器件的III族氮化物光伏器件结构和方法，其增加了III族氮化物光伏器件的光收集效率。 III族氮化物光伏器件包括一个或多个III族氮化物器件层，并且III族氮化物光伏器件通过收集入射在III族氮化物器件层的背面上的光而起作用。 III族氮化物器件层在衬底上生长，其中当除去衬底时，III族氮化物器件层被暴露，然后有意地暴露暴露的III族氮化物器件层以增强它们的光收集效率。 通过设备背面的入射光的收集简化了器件中多个结的制造。 III族氮化物光伏器件可以包括格栅状触点，透明或半透明触点或反射触点。

    TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE
    20.
    发明申请
    TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE 审中-公开
    透明无光发光二极管

    公开(公告)号：US20100283078A1

    公开(公告)日：2010-11-11

    申请号：US12836348

    申请日：2010-07-14

    申请人： Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

    发明人： Steven P. DenBaars ,  Shuji Nakamura ,  James S. Speck

    IPC分类号： H01L33/58 ,  H01L33/48

    CPC分类号： H01L33/22 ,  H01L33/32 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2924/00014 ,  H01L2924/00

    摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.

    摘要翻译： 一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。 特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或与成形的光学元件组合，其可以是模制成球体的环氧树脂，玻璃，硅或其它材料 或倒锥形，其中进入倒锥形的大部分光处于临界角内并被提取。 本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。 为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。 通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。