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    CHEMICAL VAPORIZER FOR MATERIAL DEPOSITION SYSTEMS AND ASSOCIATED METHODS
    11.
    发明申请
    CHEMICAL VAPORIZER FOR MATERIAL DEPOSITION SYSTEMS AND ASSOCIATED METHODS 审中-公开
    化学蒸发器用于材料沉积系统和相关方法

    公开(公告)号：US20140026925A1

    公开(公告)日：2014-01-30

    申请号：US14048562

    申请日：2013-10-08

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  David R. Atwell

    IPC: C23C16/44

    CPC classification number: C23C16/4405 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/52 ,  Y10T137/0357

    Abstract: System and method for operating a material deposition system are disclosed. In one embodiment, the method can include periodically injecting a precursor into a vaporizer through an injector at the vaporizer, vaporizing the precursor in the vaporizer and supplying the vaporized precursor to a reaction chamber in fluid communication with the vaporizer, and shutting down the vaporizer and the reaction chamber after a period of time. The method can also include conducting maintenance of the injector at the vaporizer by using a vapor solvent rinse.

    Abstract translation: 公开了用于操作材料沉积系统的系统和方法。 在一个实施方案中，该方法可以包括通过蒸发器处的注射器周期性地将前体注入蒸发器中，蒸发蒸发器中的前体并将蒸发的前体供应到与蒸发器流体连通的反应室，并且关闭蒸发器和 反应室经过一段时间。 该方法还可以包括通过使用蒸气溶剂冲洗在蒸发器处进行喷射器的维护。

    Methods of forming a memory cell comprising a metal chalcogenide material
    12.
    发明授权
    Methods of forming a memory cell comprising a metal chalcogenide material 有权

    公开(公告)号：US11538991B2

    公开(公告)日：2022-12-27

    申请号：US16457194

    申请日：2019-06-28

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

    IPC: H01L45/00 ,  H01L21/02

    Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

    RESISTIVE MEMORY HAVING CONFINED FILAMENT FORMATION
    18.
    发明申请
    RESISTIVE MEMORY HAVING CONFINED FILAMENT FORMATION 有权
    具有确定的光纤形成的电阻记忆

    公开(公告)号：US20150021541A1

    公开(公告)日：2015-01-22

    申请号：US14478408

    申请日：2014-09-05

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Jun Liu

    IPC: H01L45/00

    CPC classification number: H01L45/085 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1683

    Abstract: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

    Abstract translation: 本文描述了具有限制的灯丝形成的电阻记忆。 一个或多个方法实施例包括在硅材料上形成具有硅材料和氧化物材料的堆叠中的开口，以及在邻近硅材料的开口中形成氧化物材料，其中形成在开口中的氧化物材料限制在 电阻性存储单元到形成在开口中的氧化物材料包围的区域。

    METHODS OF FORMING STRUCTURES HAVING NANOTUBES EXTENDING BETWEEN OPPOSING ELECTRODES AND STRUCTURES INCLUDING SAME
    20.
    发明申请
    METHODS OF FORMING STRUCTURES HAVING NANOTUBES EXTENDING BETWEEN OPPOSING ELECTRODES AND STRUCTURES INCLUDING SAME 有权
    形成具有对称电极的纳米结构的结构的方法和包括其的结构

    公开(公告)号：US20140084248A1

    公开(公告)日：2014-03-27

    申请号：US14090770

    申请日：2013-11-26

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Gurtej S. Sandhu

    IPC: H01L51/05 ,  H01L51/00

    CPC classification number: H01L51/0558 ,  B82Y10/00 ,  G11C13/025 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78 ,  H01L51/0003 ,  H01L51/0048 ,  H01L51/0562

    Abstract: A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed.

    Abstract translation: 公开了一种包括在电极之间形成电连接的纳米管的半导体结构。 半导体结构可以包括由电绝缘材料的下表面限定的开放体积和电介质材料和相对电极中的每一个的至少一部分的侧壁。 纳米管可以在相对的电极之间延伸，在它们之间形成物理和电连接。 纳米管可以封装在半导体结构中的开放体积内。 还公开了包括在源区和漏区之间形成电连接的纳米管的半导体结构。 半导体结构可以包括电连接到源极和漏极的至少一个半导体碳纳米管，设置在至少一个半导体碳纳米管上方的电介质材料和覆盖该介电材料的一部分的栅极电介质。 还公开了形成半导体结构的方法。

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