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    Method of forming patterned polyimide films
    12.
    发明授权
    Method of forming patterned polyimide films 失效
    形成图案化聚酰亚胺膜的方法

    公开(公告)号：US5470693A

    公开(公告)日：1995-11-28

    申请号：US837505

    申请日：1992-02-18

    申请人： Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    发明人： Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    IPC分类号： H01L21/30 ,  G03F7/00 ,  G03F7/09 ,  H01L21/306 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  G03F7/26

    CPC分类号： G03F7/0035 ,  G03F7/094 ,  H01L21/31144 ,  H01L21/76804

    摘要： A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.

    摘要翻译： 公开了通过光致抗蚀剂掩模使用聚酰亚胺前体的湿显影制造图案化聚酰亚胺膜的方法。 通过从聚酰胺酸前体（通常来源于3,3'，4,4'-联苯四羧酸二酐 - 对苯二胺（BPDA-PDA））开始形成低热膨胀系数（TCE）聚酰亚胺图案。 产生聚酰亚胺图案，完全保留聚酰亚胺骨架化学的固有性质，并在低TCE聚酰亚胺电介质中形成冶金图案。

    Use of plasma polymerized organosilicon films in fabrication of lift-off masks
    13.
    发明授权
    Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效

    公开(公告)号：US4493855A

    公开(公告)日：1985-01-15

    申请号：US452549

    申请日：1982-12-23

    申请人： Harbans S. Sachdev ,  Krishna G. Sachdev

    发明人： Harbans S. Sachdev ,  Krishna G. Sachdev

    IPC分类号： H01L21/302 ,  G03F7/09 ,  H01L21/3065 ,  H01L21/3205 ,  B05D3/06

    CPC分类号： G03F7/094

    摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.

    Method of removing silicone polymer deposits from electronic components
    14.
    发明授权
    Method of removing silicone polymer deposits from electronic components 有权
    从电子部件去除有机硅聚合物沉积物的方法

    公开(公告)号：US06652665B1

    公开(公告)日：2003-11-25

    申请号：US10160627

    申请日：2002-05-31

    申请人： Krishna G. Sachdev ,  Umar M. Ahmad ,  Chon C. Lei

    发明人： Krishna G. Sachdev ,  Umar M. Ahmad ,  Chon C. Lei

    IPC分类号： B08B310

    CPC分类号： C11D7/261 ,  B08B3/02 ,  B08B3/102 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3209 ,  C11D7/5022 ,  C11D11/0047 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/16152 ,  H05K3/288

    摘要： A method of removing cured silicone polymer deposits from electronic components. The components are immersed in a preheated solution of a quaternary ammonium fluoride in a hydrophobic non-hydroxylic aprotic solvent with agitation. The components are then immersed in a preheated solvent consisting essentially of a hydrophobic aprotic solvent with agitation. This is followed by a rinse and spray of the components with a hydrophilic, essentially water soluble solvent, with agitation. The components are then immersed in a water bath and then rinsed with a pressurized spray of water and then dried with a N2 blow dry.

    摘要翻译： 从电子部件去除固化的硅氧烷聚合物沉积物的方法。 将组分浸入预热的季铵氟化物在疏水非羟基非质子溶剂中并搅拌。 然后将组分浸入基本上由疏水性非质子溶剂组成的预热溶剂中并搅拌。 随后在搅拌下用亲水性，基本上水溶性的溶剂冲洗和喷雾组分。 然后将组分浸入水浴中，然后用加压喷雾水冲洗，然后用N 2吹干干燥。

    Removal of residues from metallic insert used in manufacture of multi-layer ceramic substrate with cavity for microelectronic chip
    18.
    发明授权
    Removal of residues from metallic insert used in manufacture of multi-layer ceramic substrate with cavity for microelectronic chip 失效
    从用于微电子芯片空腔的多层陶瓷基板制造中使用的金属插件中除去残留物

    公开(公告)号：US5643818A

    公开(公告)日：1997-07-01

    申请号：US642238

    申请日：1996-05-02

    申请人： Krishna G. Sachdev ,  Thomas E. Lombardi ,  Vincent P. Peterson

    发明人： Krishna G. Sachdev ,  Thomas E. Lombardi ,  Vincent P. Peterson

    IPC分类号： H01L21/48 ,  H01L21/70

    CPC分类号： H01L21/4857 ,  H01L21/4864 ,  H01L2924/15153 ,  H01L2924/1517

    摘要： After a metallic insert has been used precisely to define a cavity for a microelectronic chip in a laminated, multi-sheet, predominantly ceramic substrate having metallic features, any green sheet and metal-polymer composite paste residues are removed from the metallic insert by immersing the metallic insert in an ultrasonically agitated bath containing a first solvent having a relatively high boiling point for about five to fifteen minutes, replacing the first solvent with a second solvent having a relatively low boiling point, and drying the metallic insert in hot air or hot nitrogen to remove the second solvent. Preferably, the first solvent is an alkoxy alcohol, such as 1-methoxy-2-propanol or 3-methoxy-1-butanol, or a hydroxy ester, such as ethyl lactate, and the second solvent is a lower alkyl alcohol, such as isopropanol. Alternatively, the first solvent may be a ketone or an alkyl ester. The metallic insert is rinsed in the second solvent, preferably in an ultrasonically agitated bath, to replace the first solvent with the second solvent before the metallic insert is dried to remove the first solvent.

    摘要翻译： 在金属插入件被精确地用于在具有金属特征的层压，多片，主要为陶瓷的基底中限定用于微电子芯片的空腔的情况下，通过将任何生片和金属 - 聚合物复合糊料残留物从金属插入物中浸渍 金属插入物在包含具有较高沸点的第一溶剂的超声波搅拌浴中约5至15分钟，用具有相对低沸点的第二溶剂代替第一溶剂，并在热空气或热氮中干燥金属插入物 以除去第二溶剂。 优选地，第一溶剂是烷氧基醇，例如1-甲氧基-2-丙醇或3-甲氧基-1-丁醇，或羟基酯如乳酸乙酯，第二溶剂是低级烷基醇，例如 异丙醇 或者，第一溶剂可以是酮或烷基酯。 金属插入物在第二溶剂中，优选在超声波搅拌浴中漂洗，以在将金属插入物干燥以除去第一溶剂之前用第二溶剂替换第一溶剂。

    Ceramic probe card and method for reducing leakage current
    19.
    发明授权
    Ceramic probe card and method for reducing leakage current 失效
    陶瓷探针卡和减少漏电流的方法

    公开(公告)号：US5532608A

    公开(公告)日：1996-07-02

    申请号：US417623

    申请日：1995-04-06

    申请人： Abbas Behfar-Rad ,  Charles H. Perry ,  Krishna G. Sachdev

    发明人： Abbas Behfar-Rad ,  Charles H. Perry ,  Krishna G. Sachdev

    IPC分类号： G01R31/26 ,  G01R1/073 ,  H05K3/28 ,  H05K9/00 ,  G01R15/12

    CPC分类号： G01R1/07307

    摘要： An electrical probe card for parametric testing of microelectronics having reduced leakage current, includes a hydrophobic layer of a self curing silicone material coating the entire exposed surface of the ceramic card between exposed conductors. The hydrophobic layer has a thickness of less than 1 micrometer, preferably less than 0.1 micrometer and most preferably between 0.01 and 0.001 micrometers. The hydrophobic layer does not interfere with subsequent soldering to the contacts on the card, is inexpensive, solvent resistant and easily applied to new and pre-existing probe cards. The method of application involves applying an excess of the hydrophobic silicone material in its uncured state, followed by vigorously wiping excess material off to thin the layer, produce a good bond and clean the exposed conductors on the probe card.

    摘要翻译： 用于具有减小的漏电流的微电子学参数测试的电探针卡包括在裸露导体之间涂覆陶瓷卡的整个暴露表面的自固化硅氧烷材料的疏水层。 疏水层的厚度小于1微米，优选小于0.1微米，最优选为0.01至0.001微米。 疏水层不会干扰随后焊接到卡上的触点，价格低廉，耐溶剂性，并且易于应用于新的和预先存在的探针卡。 施用方法包括将过量的疏水性硅氧烷材料应用于其未固化状态，然后剧烈擦拭多余的材料以使层变薄，产生良好的粘结并清洁探针卡上的暴露的导体。

    Method of forming patterned polyimide films
    20.
    发明授权
    Method of forming patterned polyimide films 失效
    形成图案化聚酰亚胺膜的方法

    公开(公告)号：US5374503A

    公开(公告)日：1994-12-20

    申请号：US47642

    申请日：1993-04-13

    申请人： Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    发明人： Krishna G. Sachdev ,  Joel R. Whitaker ,  Umar M. Ahmad

    IPC分类号： H01L21/30 ,  G03F7/00 ,  G03F7/09 ,  H01L21/306 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  G03C5/00

    CPC分类号： G03F7/0035 ,  G03F7/094 ,  H01L21/31144 ,  H01L21/76804

    摘要： A method of producing patterned polyimide films using wet development of polyimide precursors through a photoresist mask is disclosed. Low thermal coefficient of expansion (TCE) polyimide patterns are formed by starting with a polyamic acid precursor, typically, that derived from 3,3',4,4'-biphenyltetracarboxylic acid dianhydride-p-phenylenediamine (BPDA-PDA). Polyimide patterns are generated with complete retention of the intrinsic properties of the polyimide backbone chemistry and formation of metallurgical patterns in low TCE polyimide dielectric.

    摘要翻译： 公开了通过光致抗蚀剂掩模使用聚酰亚胺前体的湿显影制造图案化聚酰亚胺膜的方法。 通过从聚酰胺酸前体（通常来源于3,3'，4,4'-联苯四羧酸二酐 - 对苯二胺（BPDA-PDA））开始形成低热膨胀系数（TCE）聚酰亚胺图案。 产生聚酰亚胺图案，完全保留聚酰亚胺骨架化学的固有性质，并在低TCE聚酰亚胺电介质中形成冶金图案。