公开(公告)号：US08790785B2

公开(公告)日：2014-07-29

申请号：US12374390

申请日：2007-07-23

申请人： Hironori Yamamoto ,  Fuminori Ito ,  Munehiro Tada ,  Yoshihiro Hayashi

发明人： Hironori Yamamoto ,  Fuminori Ito ,  Munehiro Tada ,  Yoshihiro Hayashi

IPC分类号： B32B9/00 ,  H01L21/312 ,  C07F7/21

CPC分类号： C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3124 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10T428/31663

摘要： A method of forming a porous insulation film uses an organic silica material gas having a 3-membered SiO cyclic structure and a 4-membered SiO cyclic structure, or an organic silica material gas having a 3-membered SiO cyclic structure and a straight-chain organic silica structure, and uses a plasma reaction in the filming process. A porous interlevel dielectric film having a higher strength and a higher adhesive property can be obtained.

摘要翻译： 形成多孔绝缘膜的方法使用具有3元SiO环状结构和4元SiO环状结构的有机二氧化硅材料气体或具有3元SiO环状结构和直链的有机二氧化硅材料气体 有机二氧化硅结构，并且在成膜过程中使用等离子体反应。 可以获得具有更高强度和更高粘附性的多孔层间电介质膜。

公开(公告)号：US20130181180A1

公开(公告)日：2013-07-18

申请号：US13824098

申请日：2011-09-20

申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

IPC分类号： H01L45/00

CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/73 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146

摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.

摘要翻译： 根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变 并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极 第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。

公开(公告)号：US20120280200A1

公开(公告)日：2012-11-08

申请号：US13508243

申请日：2010-11-08

申请人： Munehiro Tada ,  Koichiro Okamoto ,  Toshitsugu Sakamoto ,  Hiromitsu Hada

发明人： Munehiro Tada ,  Koichiro Okamoto ,  Toshitsugu Sakamoto ,  Hiromitsu Hada

IPC分类号： H01L45/00 ,  H01L51/40

CPC分类号： H01L45/1616 ,  H01C7/006 ,  H01C7/18 ,  H01C17/08 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/1675

摘要： A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.

摘要翻译： 根据本发明的电阻改变元件包括第一电极（101）和第二电极（103）; 和形成在第一电极（101）和第二电极（103）之间并且至少含有氧和碳的离子传导层（102）。

公开(公告)号：US08198730B2

公开(公告)日：2012-06-12

申请号：US12522814

申请日：2008-01-08

申请人： Masayoshi Tagami ,  Yoshihiro Hayashi ,  Munehiro Tada ,  Takahiro Onodera ,  Naoya Furutake ,  Makoto Ueki ,  Mari Amano

发明人： Masayoshi Tagami ,  Yoshihiro Hayashi ,  Munehiro Tada ,  Takahiro Onodera ,  Naoya Furutake ,  Makoto Ueki ,  Mari Amano

IPC分类号： H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/7684 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a multilayer interconnection including a copper interconnection film formed in a predetermined area within an insulating film, a liner film, and a high-melting-point metal film. The copper interconnection film is polycrystalline, and crystal grains occupying 40% or more of an area of a unit interconnection surface among crystal grains forming the polycrystal are oriented to (111) in a substrate thickness direction. The copper interconnection film has crystal conformity with the noble metal liner film. In a case where the high-melting-point metal film is formed of Ti and the noble metal liner film is a Ru film, the high-melting-point metal of Ti dissolves into Ru in a solid state to form the noble metal liner. Thus, a copper interconnection is formed with both of Cu diffusion barrier characteristics and Cu crystal conformity.

摘要翻译： 半导体器件具有包括形成在绝缘膜内的预定区域中的铜互连膜，衬里膜和高熔点金属膜的多层互连。 铜互连膜是多晶的，并且占据形成多晶体的晶粒中的单位互连表面的面积的40％以上的晶粒在基板厚度方向上取向为（111）。 铜互连膜与贵金属衬垫膜具有晶体一致性。 在高熔点金属膜由Ti形成并且贵金属衬垫膜是Ru膜的情况下，Ti的高熔点金属以固态溶解到Ru中以形成贵金属衬垫。 因此，铜互连形成为Cu扩散阻挡特性和Cu晶体一致性。

公开(公告)号：US20110272664A1

公开(公告)日：2011-11-10

申请号：US13139602

申请日：2010-01-08

申请人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Hiromitsu Hada ,  Naoki Banno

发明人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Hiromitsu Hada ,  Naoki Banno

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L45/08 ,  H01L27/101 ,  H01L27/228 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1675

摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.

摘要翻译： 半导体器件包括半导体衬底; 半导体衬底上的多层布线层结构; 以及所述多层布线层结构中的可变电阻元件，其中所述可变电阻元件包括电阻在顶部电极和底部电极之间变化的可变电阻元件膜，其中所述多层布线层结构至少包括与 底部电极和电连接到顶部电极的插头，并且其中布线也用作底部电极。

公开(公告)号：US20100219512A1

公开(公告)日：2010-09-02

申请号：US11991745

申请日：2006-09-08

申请人： Munehiro Tada ,  Naoya Furutake ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

发明人： Munehiro Tada ,  Naoya Furutake ,  Tsuneo Takeuchi ,  Yoshihiro Hayashi

IPC分类号： H01L23/29 ,  H01L21/47

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming porous insulating film using cyclic siloxane raw material monomer is provided, which method suppresses detachment of hydrocarbon and is able to form a low-density film.In a method where at least cyclic organosiloxane raw material 101 is supplied to a reaction chamber and an insulating film is formed by plasma vapor deposition method, above-mentioned problem is solved by a method for a forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material 101 and a compound raw material 103 including a part of chemical structure comprising the cyclic organosiloxane raw material 101. The compound raw material 103 is preferably a compound including a part of side chain of the cyclic organosiloxane raw material 101.

摘要翻译： 提供了使用环状硅氧烷原料单体形成多孔绝缘膜的方法，该方法抑制烃的分离并能够形成低密度膜。 在通过等离子体气相沉积法将至少环状有机硅氧烷原料101供给到反应室并形成绝缘膜的方法中，上述问题通过使用以下的混合气体形成多孔绝缘膜的方法来解决： 环状有机硅氧烷原料101和包含环状有机硅氧烷原料101的化学结构的一部分的复合原料103.化合物原料103优选为包含环状有机硅氧烷原料101的侧链的一部分的化合物。

公开(公告)号：US20050253272A1

公开(公告)日：2005-11-17

申请号：US10509898

申请日：2003-03-31

申请人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken'ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

发明人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken'ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813

摘要： A technique is provided for protecting an interlayer insulating film formed of an organic low dielectric constant material from any damage applied in a semiconductor process, and for attaining the decrease leak current in the interlayer insulating film, resulting in the improvement of reliability of a semiconductor device. The semiconductor device according to the present invention has an organic insulating films (5, 26, 28) having openings. The organic insulating films (5, 26, 28) have modified portions (5a, 26a, 28a) facing the openings. The modified portions (5a, 26a, 28a) contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portions (5a, 26a, 28a) is lower than the concentration of the nitrogen atoms. The above-mentioned modified layers (5a, 26a, 28a) protect the semiconductor device from the damage applied in the semiconductor process, while suppressing the corrosion of the conductors embedded in the openings.

摘要翻译： 提供了一种用于保护由有机低介电常数材料形成的层间绝缘膜的技术，用于在半导体工艺中施加的任何损坏，并且为了获得在层间绝缘膜中的减小的漏电流，从而提高半导体器件的可靠性 。 根据本发明的半导体器件具有具有开口的有机绝缘膜（5,26,28）。 有机绝缘膜（5,26,28）具有面向开口的变形部分（5a，26a，28a）。 改性部分（5a，26a，28a）含有氟原子和氮原子。 改性部分（5a，26a，28a）中氟原子的浓度低于氮原子的浓度。 上述改性层（5a，26a，28a）保护半导体器件免受在半导体工艺中的损坏，同时抑制嵌入在开口中的导体的腐蚀。

公开(公告)号：US10256400B2

公开(公告)日：2019-04-09

申请号：US15173875

申请日：2016-06-06

申请人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Hiromitsu Hada ,  Naoki Banno

发明人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Hiromitsu Hada ,  Naoki Banno

IPC分类号： H01L27/22 ,  H01L45/00 ,  H01L27/24 ,  H01L27/10

摘要： A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.

公开(公告)号：US09548115B2

公开(公告)日：2017-01-17

申请号：US14385623

申请日：2013-03-14

申请人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Makoto Miyamura

发明人： Munehiro Tada ,  Toshitsugu Sakamoto ,  Makoto Miyamura

IPC分类号： G11C13/00 ,  H01L45/00 ,  H01L27/10

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/17 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/146 ,  H01L45/1608

摘要： This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.

摘要翻译： 该可变电阻元件设置有可变电阻膜，与可变电阻膜的一个表面接触设置的第一电极和与可变电阻膜的另一个表面接触的第二电极。 第一电极和第二电极分别具有角部，并且将第一和第二电极的角部之间的距离设定为等于第一和第二电极之间的最短距离。 此外，可变电阻元件具有设置在可变电阻膜的一个表面上的第三电极。

公开(公告)号：US09029825B2

公开(公告)日：2015-05-12

申请号：US13704223

申请日：2011-06-14

申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

IPC分类号： H01L47/00 ,  H01L45/00 ,  G11C13/00 ,  H01L23/532 ,  H01L27/10 ,  H01L27/24

CPC分类号： H01L45/1253 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  H01L23/53238 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes multilayer interconnects and two variable resistance elements (22a, 22b) that are provided among the multilayer interconnects and that include first electrodes (5), second electrodes (10a, 10b), and variable resistance element films (9a, 9b) that are each interposed between first electrodes (5) and respective second electrodes (10a, 10b). Either the first electrodes (5) or the second electrodes (10a, 10b) of the two variable resistance elements (22a, 22b) are unified.

摘要翻译： 半导体器件包括多层互连和设置在多层互连之间的两个可变电阻元件（22a，22b），它们包括第一电极（5），第二电极（10a，10b）和可变电阻元件膜（9a，9b） 每个插入在第一电极（5）和相应的第二电极（10a，10b）之间。 两个可变电阻元件（22a，22b）的第一电极（5）或第二电极（10a，10b）是一体的。