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    Method of manufacturing light emitting element that includes formation of an insulating layer
    12.
    发明授权
    Method of manufacturing light emitting element that includes formation of an insulating layer 有权
    包括形成绝缘层的发光元件的制造方法

    公开(公告)号：US09490390B2

    公开(公告)日：2016-11-08

    申请号：US14177329

    申请日：2014-02-11

    Applicant: NICHIA CORPORATION

    Inventor： Akinori Yoneda ,  Shinji Nakamura ,  Akiyoshi Kinouchi ,  Yoshiyuki Aihara ,  Hirokazu Sasa

    IPC: H01L33/00 ,  H01L33/44

    CPC classification number: H01L33/387 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/62

    Abstract: A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.

    Abstract translation: 一种用于倒装芯片安装的发光元件，其具有平坦的安装表面，其允许晶片的街道宽度的减小。 在发光元件中，填充凸起并使上表面变平的绝缘构件形成有宽度等于或大于分界线上的街道宽度的区域的边缘，使得在 分割晶片沿着分割线的时间，绝缘构件不被处理，这允许以小的宽度设计街道。

    Light emitting device with resin member having embedded inner conductive members
    13.
    发明授权
    Light emitting device with resin member having embedded inner conductive members 有权
    具有树脂构件的发光装置具有嵌入的内部导电构件

    公开(公告)号：US09379287B2

    公开(公告)日：2016-06-28

    申请号：US14581639

    申请日：2014-12-23

    Applicant: Nichia Corporation

    Inventor： Akinori Yoneda ,  Yoshiyuki Aihara

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62 ,  H01L33/48 ,  H01L33/52

    CPC classification number: H01L33/62 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/486 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L2224/4813 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066

    Abstract: A light emitting device is constituted with a semiconductor light emitting element on which a support member is disposed on one surface provided with a p-side electrode and an n-side electrode and a fluorescent material layer is disposed on the other surface which is an opposite side of the one surface. The support member includes a resin layer, an electrode for p-side external connection and an electrode for n-side external connection disposed exposed at a surface opposite side of a surface where the resin layer is in touch with a light emitting element, and internal wirings disposed in the resin layer and electrically connecting between a p-side electrode and the electrode for p-side external connection respectively. The internal wirings include a metal wire and a metal plated layer, and a metal wire and a metal plated layer respectively connected in series.

    Abstract translation: 发光装置由在其上设置有p侧电极和n侧电极的一个表面上设置有支撑构件的半导体发光元件构成，并且荧光材料层设置在相反的另一个表面上 一面。 支撑构件包括树脂层，用于p侧外部连接的电极和用于n侧外部连接的电极，暴露在树脂层与发光元件接触的表面的相反侧的表面处，以及内部 布线设置在树脂层中，分别电连接p侧电极和p侧外部电极用电极。 内部布线包括金属线和金属镀层，以及分别串联连接的金属线和金属镀层。

    Method for manufacturing light-emitting element
    15.
    发明授权
    Method for manufacturing light-emitting element 有权

    公开(公告)号：US12243954B2

    公开(公告)日：2025-03-04

    申请号：US18343078

    申请日：2023-06-28

    Applicant: NICHIA CORPORATION

    Inventor： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/50

    Abstract: A method for manufacturing a light-emitting element includes: forming a semiconductor structure comprising a light-emitting layer on a first surface of a substrate, wherein the first surface comprising a plurality of protrusions and a second region; dividing the semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region of the substrate, wherein the second region is exposed from under the semiconductor structure in the exposed region; bonding a light-transmitting body to a second surface of the substrate that is opposite the first surface so as to form a bonded body, wherein the light-transmitting body comprises a fluorescer; forming a plurality of modified regions along the exposed region; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

    Light emitting device
    16.
    发明授权
    Light emitting device 有权

    公开(公告)号：US10665754B2

    公开(公告)日：2020-05-26

    申请号：US15614233

    申请日：2017-06-05

    Applicant: NICHIA CORPORATION

    Inventor： Akinori Yoneda ,  Yoshiyuki Aihara ,  Shinji Nakamura ,  Akiyoshi Kinouchi ,  Kazuki Kashimoto ,  Kazuyuki Akaishi

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/54 ,  H01L33/62 ,  H01L33/48 ,  H01L33/40

    Abstract: A side-view type light emitting device has a bottom surface thereof as a light emission surface and a first lateral surface thereof as a mounting surface for mounting on a mounting substrate, and includes a semiconductor layered structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first connecting electrode exposed from the first lateral surface and electrically connected to the first semiconductor layer; a first electrode disposed between the first semiconductor layer and the first connecting electrode; a second connecting electrode exposed from the first lateral surface; a metal wire electrically connecting an upper surface of the second semiconductor layer to the second connecting electrode; and a resin layer. In a direction perpendicular to the light emission surface, the active layer does not overlap with the first connecting electrode, and the active layer does not overlap with the second connecting electrode.

    Method of manufacturing light emitting device with exposed wire end portions
    17.
    发明授权
    Method of manufacturing light emitting device with exposed wire end portions 有权

    公开(公告)号：US10297737B2

    公开(公告)日：2019-05-21

    申请号：US15886656

    申请日：2018-02-01

    Applicant: NICHIA CORPORATION

    Inventor： Akinori Yoneda ,  Yoshiyuki Aihara

    IPC: H01L33/60 ,  H01L33/62 ,  H01L33/38 ,  H01L33/50 ,  H01L33/54 ,  H01L33/00 ,  H01L33/48 ,  H01L33/52

    Abstract: A method of manufacturing one or more light emitting devices includes: forming one or more emitting elements, each including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a first electrode, and a second electrode, on a growth substrate; forming a first metal layer electrically connected to each first electrode, and a second metal layer electrically connected to each second electrode; forming a first resin layer covering the one or more light emitting elements so as to expose an upper surface of each first metal layer and an upper surface of each second metal layer; connecting a first wire to the upper surface of each first metal layer, and connecting a second wire to the upper surface of each second metal layer; and forming a second resin layer on the first resin layer so as to expose an end portion of each first wire and second wire.

    Method for manufacturing semiconductor device
    18.
    发明授权
    Method for manufacturing semiconductor device 有权

    公开(公告)号：US10115877B2

    公开(公告)日：2018-10-30

    申请号：US15466780

    申请日：2017-03-22

    Applicant: NICHIA CORPORATION

    Inventor： Masatsugu Ichikawa ,  Yoshiki Inoue ,  Yoshiyuki Aihara ,  Takehito Shimatsu

    IPC: H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L25/075 ,  H01L33/44

    Abstract: A method for manufacturing a semiconductor device includes: providing a support with a semiconductor light-emitting element including a first electrode and a second electrode; providing a base including a first interconnect terminal and a second interconnect terminal; forming a first metal layer on the support to cover the first and the second electrodes; forming a second metal layer on the base to cover the first and the second interconnect terminals; arranging the first and second electrodes and the first and second interconnect terminals to respectively face each other, and providing electrical connection therebetween by atomic diffusion; and rendering electrically insulative or removing portions of the first metal layer and the second metal layer that are outside thereof defined between the first and second electrodes and the first and second interconnect terminals.

    Method of manufacturing light emitting device
    20.
    发明授权
    Method of manufacturing light emitting device 有权

    公开(公告)号：US09831379B2

    公开(公告)日：2017-11-28

    申请号：US14838255

    申请日：2015-08-27

    Applicant: Nichia Corporation

    Inventor： Akinori Yoneda ,  Yoshiyuki Aihara

    IPC: H01L33/00 ,  H01L33/50 ,  H01L33/38

    CPC classification number: H01L33/0079 ,  H01L33/382 ,  H01L33/504 ,  H01L2224/18 ,  H01L2933/0041 ,  H01L2933/0066

    Abstract: A method of manufacturing a light emitting device includes providing a wafer having a substrate and a plurality of semiconductor stacked-layer bodies stacked on the substrate, an upper surface of the substrate being exposed at an outer peripheral region of each of the plurality of semiconductor stack bodies in a plan view, forming a separation layer integrally covering the upper surface of the substrate and an upper surface of the semiconductor stacked-layer body, the separation layer including a separation boundary, forming a support member on the separation layer, removing the substrate, forming a wavelength conversion layer on a side of the semiconductor stack body and the separation layer where the substrate is removed, the wavelength conversion layer made of a resin containing a wavelength conversion member, and removing the wavelength conversion layer located in the outer peripheral region by separating the separation layer at the separation boundary.

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