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    Apparatus, method and system for random number generation
    11.
    发明授权
    Apparatus, method and system for random number generation 有权
    随机数生成装置，方法和系统

    公开(公告)号：US09304741B2

    公开(公告)日：2016-04-05

    申请号：US13867979

    申请日：2013-04-22

    Applicant: OmniVision Technologies, Inc.

    Inventor： Dominic Massetti ,  Gang Chen

    IPC: G01R29/26 ,  G06F7/58

    CPC classification number: G06F7/582 ,  G01R29/26 ,  G06F7/588

    Abstract: Techniques and mechanisms for generating a random number. In an embodiment, a first signal is received from a first cell including a first source follower transistor. Circuit logic detects for a pulse of the first signal and, in response to the pulse, generates a signal indicating detection of a first random telegraph noise event in the first source follower transistor. In another embodiment, a first count update is performed in response to the indicated detection of the first random telegraph noise event. The first count update is one basis for generation of a number corresponding to a plurality of random telegraph noise events.

    Abstract translation: 用于生成随机数的技术和机制。 在一个实施例中，从包括第一源极跟随器晶体管的第一单元接收第一信号。 电路逻辑检测第一信号的脉冲，并且响应于脉冲，产生指示检测第一源极跟随器晶体管中的第一随机电报噪声事件的信号。 在另一实施例中，响应于所指示的第一随机电报噪声事件的检测，执行第一计数更新。 第一计数更新是用于生成与多个随机电报噪声事件相对应的数字的一个基础。

    VISIBLE AND INFRARED IMAGE SENSOR
    12.
    发明申请
    VISIBLE AND INFRARED IMAGE SENSOR 有权
    可见和红外图像传感器

    公开(公告)号：US20160027837A1

    公开(公告)日：2016-01-28

    申请号：US14341257

    申请日：2014-07-25

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Eric A. G. Webster ,  Howard E. Rhodes ,  Dominic Massetti

    IPC: H01L27/146 ,  H01L31/028

    CPC classification number: H01L27/14645 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14652 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/028

    Abstract: A pixel array including an SixGey layer disposed on a first semiconductor layer. A plurality of pixels is disposed in the first semiconductor layer. The plurality of pixels includes: (1) a first portion of pixels separated from the SixGey layer by a spacer region and (2) a second portion of pixels including a first doped region in contact with the SixGey layer. The pixel array also includes pinning wells disposed between individual pixels in the plurality of pixels. A first portion of the pinning wells extend through the first semiconductor layer. A second portion of the pinning wells extend through the first semiconductor layer and the SixGey layer.

    Abstract translation: 包括设置在第一半导体层上的SixGey层的像素阵列。 多个像素设置在第一半导体层中。 多个像素包括：（1）通过间隔区域与SixGey层分离的像素的第一部分和（2）包括与SixGey层接触的第一掺杂区域的像素的第二部分。 像素阵列还包括设置在多个像素中的各个像素之间的钉扎阱。 钉扎井的第一部分延伸穿过第一半导体层。 钉扎阱的第二部分延伸穿过第一半导体层和SixGey层。

    Projector for adaptor-less smartphone eye imaging and associated methods
    14.
    发明授权
    Projector for adaptor-less smartphone eye imaging and associated methods 有权
    投影仪，适用于无适配器智能手机眼睛成像及相关方法

    公开(公告)号：US09526417B1

    公开(公告)日：2016-12-27

    申请号：US14961198

    申请日：2015-12-07

    Applicant: OmniVision Technologies, Inc.

    Inventor： Dominic Massetti ,  Suganda Jutamulia

    IPC: A61B3/10 ,  A61B3/15 ,  G02B7/14 ,  A61B3/00

    CPC classification number: A61B3/152 ,  A61B3/0008 ,  G02B7/14

    Abstract: A projector and associated method allows adaptor-less smartphone eye imaging. The projector includes at least two line generators for projecting a pattern onto a face of a subject, and a structure for positioning the line generators relative to a camera of the smartphone. The pattern facilitates positioning of the smartphone relative to the subject's eye such that an image of the eye captured by the camera is optimal for evaluation.

    Abstract translation: 投影机和相关联的方法允许无需适配器的智能眼睛成像。 投影仪包括用于将图案投影到被摄体的面上的至少两个线发生器，以及用于相对于智能手机的照相机定位线发生器的结构。 该图案有助于智能手机相对于被摄体的眼睛的定位，使得由相机拍摄的眼睛的图像对于评估是最佳的。

    X-ray and optical image sensor
    15.
    发明授权
    X-ray and optical image sensor 有权
    X光和光学图像传感器

    公开(公告)号：US09520439B2

    公开(公告)日：2016-12-13

    申请号：US14034210

    申请日：2013-09-23

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Dominic Massetti ,  Yu Zheng

    IPC: H01L27/146 ,  G01T1/20 ,  G01N23/083

    CPC classification number: H01L27/14676 ,  G01N23/083 ,  G01T1/2018 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

    Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.

    Abstract translation: 用于捕获X射线图像数据和光学图像数据的图像传感器包括设置在半导体层中的X射线吸收层和多个光电二极管。 X射线吸收层配置为响应于接收的X射线辐射而发射光子。 设置在半导体层中的多个光电二极管被光学耦合以接收图像光以产生光学图像数据，并且被光学耦合以从X射线吸收层接收光子以产生X射线图像数据。

    IMAGE SENSOR WITH ENHANCED QUANTUM EFFICIENCY
    16.
    发明申请
    IMAGE SENSOR WITH ENHANCED QUANTUM EFFICIENCY 有权
    具有增强量子效率的图像传感器

    公开(公告)号：US20160227147A1

    公开(公告)日：2016-08-04

    申请号：US14612961

    申请日：2015-02-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Dominic Massetti ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Yuanwei Zheng ,  Duli Mao ,  Dyson H. Tai

    IPC: H04N5/3745 ,  H04N5/378

    CPC classification number: H04N9/045 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14647 ,  H04N5/37457

    Abstract: A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.

    Abstract translation: 背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。 第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。 具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。 第三掺杂区域设置在第二掺杂区域和半导体材料的图像传感器电路正面之间。 第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

    Image sensor pixel cell with non-destructive readout
    17.
    发明授权
    Image sensor pixel cell with non-destructive readout 有权
    具有非破坏性读数的图像传感器像素单元

    公开(公告)号：US09406718B2

    公开(公告)日：2016-08-02

    申请号：US14500193

    申请日：2014-09-29

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Johannes Solhusvik ,  Dominic Massetti

    IPC: H01L27/148 ,  H01L27/146

    CPC classification number: H01L27/14831 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/2351 ,  H04N5/353 ,  H04N5/3535 ,  H04N5/3745 ,  H04N5/37452

    Abstract: A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.

    Abstract translation: 像素单元包括响应于入射光耦合到光生成图像电荷的光电二极管。 深沟槽隔离结构靠近光电二极管设置，以通过深沟槽隔离结构提供与光电二极管的电容耦合。 放大器晶体管耦合到深沟槽隔离结构以响应于通过由深沟槽隔离结构提供的电容耦合从光电二极管读出的图像电荷来产生放大的图像数据。 行选择晶体管耦合到放大器晶体管的输出，以选择性地将放大的图像数据输出到耦合到行选择晶体管的列位线。

    X-RAY AND OPTICAL IMAGE SENSOR
    18.
    发明申请
    X-RAY AND OPTICAL IMAGE SENSOR 有权
    X光和光学图像传感器

    公开(公告)号：US20150085978A1

    公开(公告)日：2015-03-26

    申请号：US14034210

    申请日：2013-09-23

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Dominic Massetti ,  Yu Zheng

    IPC: H01L27/146 ,  G01N23/04

    CPC classification number: H01L27/14676 ,  G01N23/083 ,  G01T1/2018 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

    Abstract: An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a semiconductor layer. The X-ray absorption layer is configured to emit photons in response to receiving X-ray radiation. The plurality of photodiodes disposed in the semiconductor layer is optically coupled to receive image light to generate the optical image data, and is optically coupled to receive photons from the X-ray absorption layer to generate X-ray image data.

    Abstract translation: 用于捕获X射线图像数据和光学图像数据的图像传感器包括设置在半导体层中的X射线吸收层和多个光电二极管。 X射线吸收层配置为响应于接收的X射线辐射而发射光子。 设置在半导体层中的多个光电二极管被光学耦合以接收图像光以产生光学图像数据，并且被光学耦合以从X射线吸收层接收光子以产生X射线图像数据。

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