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    Optoelectronic semiconductor component and method for producing same
    12.
    发明授权
    Optoelectronic semiconductor component and method for producing same 有权

    公开(公告)号：US10115871B2

    公开(公告)日：2018-10-30

    申请号：US15543665

    申请日：2015-12-16

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander Linkov ,  Siegfried Herrmann

    IPC: H01L33/50 ,  H01L33/60 ,  H01L23/00 ,  H01L33/62 ,  H01L33/56

    Abstract: An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.

    Optoelectronic semiconductor component
    13.
    发明授权
    Optoelectronic semiconductor component 有权
    光电半导体元件

    公开(公告)号：US09159890B2

    公开(公告)日：2015-10-13

    申请号：US14181104

    申请日：2014-02-14

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Juergen Moosburger ,  Britta Goeoetz ,  Georg Dirscherl ,  Wolfgang Moench ,  Alexander Linkov

    IPC: H01L33/00 ,  H01L33/60 ,  G03B15/02 ,  H01L33/58 ,  G03B9/02

    CPC classification number: H01L33/60 ,  G03B9/02 ,  G03B15/02 ,  G03B15/05 ,  G03B2215/0567 ,  H01L33/58

    Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 μm. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

    Abstract translation: 光电子半导体部件包括一个或多个发光二极管芯片。 发光二极管芯片具有主辐射侧。 沿着发光二极管芯片的主辐射方向在主辐射侧的下游配置隔膜。 隔膜安装在组件外壳上或组件外壳中。 主辐射侧具有至少50μm的平均边缘长度。 隔膜可以从不透光到透光的切换。 隔膜包括精确的一个用于辐射传输的开口区域。 半导体元件可以用作移动图像记录装置的手电筒。

    Optoelectronic component
    14.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US08952390B2

    公开(公告)日：2015-02-10

    申请号：US13750966

    申请日：2013-01-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Ralph Wirth ,  Alexander Linkov

    IPC: H01L33/30 ,  H01L25/075 ,  H01L33/50 ,  H01L33/56 ,  H01L33/60

    CPC classification number: H01L25/0753 ,  H01L27/15 ,  H01L33/30 ,  H01L33/32 ,  H01L33/483 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

    Abstract: An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier.

    Abstract translation: 光电子部件可用于混合具有不同波长的电磁辐射，特别是在远场中。 光电子部件包括载体。 第一半导体芯片具有用于在第一光谱范围内发射电磁辐射的第一辐射出射表面，并且在载体上设置第二半导体芯片作为用于在第二光谱范围内发射电磁辐射的第二辐射出射表面。 在半导体芯片的远离载体的辐射出射表面上设置漫射层。

    Light Source
    16.
    发明申请
    Light Source 审中-公开

    公开(公告)号：US20190051788A1

    公开(公告)日：2019-02-14

    申请号：US16079020

    申请日：2017-05-29

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Rainer Butendeich ,  Christoph Koller ,  Thomas Schwarz

    IPC: H01L31/167 ,  H01L25/13 ,  H01L31/0232 ,  H01L31/02 ,  H01L25/16

    Abstract: A light source is disclosed. In an embodiment a light source includes at least one first semiconductor emitter for generating first light, at least one second semiconductor emitter for generating second light, the second light having a different color than the first light, a light mixing body configured to produce a mixed light from the first and second lights and a detector on the light mixing body, the detector configured to determine a color locus of the mixed light, wherein the first and second semiconductor emitters are arranged along a line and have different distances from the detector, wherein the light mixing body is arranged on side surfaces of the first and second semiconductor emitters and in projection onto the side surfaces at least partially covers each of the side surfaces, so that the detector receives light from each of the first and second semiconductor emitters through the light mixing body.

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