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公开(公告)号：US10217910B2
公开(公告)日：2019-02-26
申请号：US15944328
申请日：2018-04-03
IPC分类号： H01L33/50 , H01L33/56 , H01L33/54 , H01L33/00 , H01L31/14 , H01L33/44 , H01L25/16 , H01L25/00 , H01L31/173
摘要： A method of producing a light-emitting arrangement includes providing a carrier including a top side, attaching a multitude of first conversion elements on the top side of the carrier, wherein the first conversion elements are arranged in a lateral direction spaced apart from one another, attaching an encapsulation on the top side of the carrier, wherein the encapsulation covers the carrier and the first conversion elements at least sectionally, removing the encapsulation in regions between the first conversion elements, and attaching optoelectronic semiconductor chips between the first conversion elements.
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公开(公告)号：US10115871B2
公开(公告)日：2018-10-30
申请号：US15543665
申请日：2015-12-16
摘要： An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.
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公开(公告)号：US09159890B2
公开(公告)日：2015-10-13
申请号：US14181104
申请日：2014-02-14
摘要： An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 μm. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.
摘要翻译： 光电子半导体部件包括一个或多个发光二极管芯片。 发光二极管芯片具有主辐射侧。 沿着发光二极管芯片的主辐射方向在主辐射侧的下游配置隔膜。 隔膜安装在组件外壳上或组件外壳中。 主辐射侧具有至少50μm的平均边缘长度。 隔膜可以从不透光到透光的切换。 隔膜包括精确的一个用于辐射传输的开口区域。 半导体元件可以用作移动图像记录装置的手电筒。
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公开(公告)号：US08952390B2
公开(公告)日：2015-02-10
申请号：US13750966
申请日：2013-01-25
发明人： Ralph Wirth , Alexander Linkov
IPC分类号： H01L33/30 , H01L25/075 , H01L33/50 , H01L33/56 , H01L33/60
CPC分类号： H01L25/0753 , H01L27/15 , H01L33/30 , H01L33/32 , H01L33/483 , H01L33/50 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier.
摘要翻译： 光电子部件可用于混合具有不同波长的电磁辐射，特别是在远场中。 光电子部件包括载体。 第一半导体芯片具有用于在第一光谱范围内发射电磁辐射的第一辐射出射表面，并且在载体上设置第二半导体芯片作为用于在第二光谱范围内发射电磁辐射的第二辐射出射表面。 在半导体芯片的远离载体的辐射出射表面上设置漫射层。
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15.发明授权公开(公告)号：US10276752B2
公开(公告)日：2019-04-30
申请号：US15745240
申请日：2016-07-11
发明人： Johannes Baur , Jürgen Moosburger , Lutz Höppel , Markus Maute , Thomas Schwarz , Matthias Sabathil , Ralph Wirth , Alexander Linkov
摘要： An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
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公开(公告)号：US20190051788A1
公开(公告)日：2019-02-14
申请号：US16079020
申请日：2017-05-29
发明人： Frank Singer , Alexander Linkov , Stefan Illek , Rainer Butendeich , Christoph Koller , Thomas Schwarz
IPC分类号： H01L31/167 , H01L25/13 , H01L31/0232 , H01L31/02 , H01L25/16
摘要： A light source is disclosed. In an embodiment a light source includes at least one first semiconductor emitter for generating first light, at least one second semiconductor emitter for generating second light, the second light having a different color than the first light, a light mixing body configured to produce a mixed light from the first and second lights and a detector on the light mixing body, the detector configured to determine a color locus of the mixed light, wherein the first and second semiconductor emitters are arranged along a line and have different distances from the detector, wherein the light mixing body is arranged on side surfaces of the first and second semiconductor emitters and in projection onto the side surfaces at least partially covers each of the side surfaces, so that the detector receives light from each of the first and second semiconductor emitters through the light mixing body.
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17.发明申请公开(公告)号：US20190006562A1
公开(公告)日：2019-01-03
申请号：US15745240
申请日：2016-07-11
发明人： Johannes Baur , Jurgen Moosburger , Lutz Hoppel , Markus Maute , Thomas Schwarz , Matthias Sabathil , Ralph Wirth , Alexander Linkov
IPC分类号： H01L33/42
摘要： An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
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18.发明授权公开(公告)号：US09853186B2
公开(公告)日：2017-12-26
申请号：US15144728
申请日：2016-05-02
CPC分类号： H01L33/08 , H01L33/0075 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/26 , H01L33/32 , H01L33/502 , H01L33/504
摘要： The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
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19.发明申请OPTOELECTRONIC COMPONENT, OPTOELECTRONIC ARRANGEMENT, METHOD OF PRODUCING AN OPTICAL ELEMENT, AND METHOD OF PRODUCING AN OPTOELECTRONIC COMPONENT 审中-公开光电子元件，光电子装置，制造光学元件的方法和制造光电元件的方法公开(公告)号：US20160276556A1
公开(公告)日：2016-09-22
申请号：US15033664
申请日：2014-11-04
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L2933/0058 , H01L2933/0091
摘要： An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90° with the radiation emission face.
摘要翻译： 光电子部件包括具有辐射发射面的光电子半导体芯片; 以及布置在所述辐射发射面上的光学元件，其中所述光学元件包括其中嵌入光散射颗粒的材料，并且所述嵌入的光散射颗粒的浓度具有形成不等于90°的角度的梯度， 辐射面。
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20.发明授权公开(公告)号：US09385258B2
公开(公告)日：2016-07-05
申请号：US14376165
申请日：2013-02-08
IPC分类号： H01L31/12 , H01L31/16 , H01L33/46 , H01L33/52 , H01L31/0224 , H01L31/0232 , H01L33/60
CPC分类号： H01L31/16 , H01L31/022408 , H01L31/02325 , H01L31/02327 , H01L33/46 , H01L33/52 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.
摘要翻译： 光电子半导体器件包括至少一个辐射发射和/或辐射接收半导体芯片，其包括辐射通道表面和与辐射通道表面相对的安装表面，其中安装表面包括第一电接触结构和第二电接触结构 与第一电接触结构电绝缘，并且其中辐射通道表面不具有接触结构，至少部分包围至少一个半导体芯片的反射护套和围绕至少一个半导体芯片的保护护套和/或 反射护套至少在部分。
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