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25 条记录 (耗时 0.027 秒)

    Semiconductor Component with Coreless Transformer
    11.
    发明申请
    Semiconductor Component with Coreless Transformer 有权
    无芯变压器半导体元件

    公开(公告)号：US20130278372A1

    公开(公告)日：2013-10-24

    申请号：US13452075

    申请日：2012-04-20

    申请人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

    发明人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

    IPC分类号： H01F5/00

    CPC分类号： H01L28/10 ,  H01F27/2804 ,  H01F2017/0086 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.

    摘要翻译： 半导体部件集成了无芯变压器与第一连接触点，第二连接触点，导电螺旋第一线圈，导电第一环和导电第二环。 导电螺旋第一线圈电连接在第一连接触点和第二连接触点之间。 导电的第一环围绕第一线圈和第一连接触点和第二连接触点中的一个或两个。 导电的第二环被布置在第一线圈和第一环之间，电连接到第一线圈，并且包围第一线圈以及第一连接触点和第二连接触点中的一个或两者。

    Semiconductor component with coreless transformer
    14.
    发明授权
    Semiconductor component with coreless transformer 有权
    具有无芯变压器的半导体元件

    公开(公告)号：US08665054B2

    公开(公告)日：2014-03-04

    申请号：US13452075

    申请日：2012-04-20

    申请人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

    发明人： Matthias Stecher ,  Markus Menath ,  Andreas Zankl ,  Werner Robl

    IPC分类号： H01F5/00 ,  H01L27/08

    CPC分类号： H01L28/10 ,  H01F27/2804 ,  H01F2017/0086 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.

    摘要翻译： 半导体部件集成了无芯变压器与第一连接触点，第二连接触点，导电螺旋第一线圈，导电第一环和导电第二环。 导电螺旋第一线圈电连接在第一连接触点和第二连接触点之间。 导电的第一环围绕第一线圈和第一连接触点和第二连接触点中的一个或两个。 导电的第二环被布置在第一线圈和第一环之间，电连接到第一线圈，并且包围第一线圈以及第一连接触点和第二连接触点中的一个或两者。

    Spin Device
    15.
    发明申请
    Spin Device 有权
    旋转装置

    公开(公告)号：US20100188905A1

    公开(公告)日：2010-07-29

    申请号：US12358721

    申请日：2009-01-23

    申请人： Gerhard Poeppel ,  Hans-Joerg Timme ,  Werner Robl

    发明人： Gerhard Poeppel ,  Hans-Joerg Timme ,  Werner Robl

    IPC分类号： G11C15/02 ,  H01L29/66

    CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F10/3254

    摘要： According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.

    摘要翻译： 根据本发明的实施例，自旋装置包括布置在第一端子和第二端子之间的中间半导体区域，其中第一端子适于向中间半导体区域提供具有第一自旋极化度的电流， 并且其中所述第二端子适于输出具有第二自旋极化度的电流。 自旋装置还包括邻接中间半导体区域的自旋选择性散射结构，自旋选择性散射结构适于使第一自旋极化程度改变为第二程度，其中自旋选择性散射结构包括控制电极 与中间半导体区域电绝缘，并且其中控制电极适于施加垂直于通过中间半导体区域的电流的方向的电场以控制电流的大小。

    METHOD OF MAKING AN INTEGRATED CIRCUIT INCLUDING ELECTRODEPOSITION OF ALUMINIUM
    16.
    发明申请
    METHOD OF MAKING AN INTEGRATED CIRCUIT INCLUDING ELECTRODEPOSITION OF ALUMINIUM 审中-公开
    制造包含铝电沉积的集成电路的方法

    公开(公告)号：US20080257744A1

    公开(公告)日：2008-10-23

    申请号：US11737530

    申请日：2007-04-19

    申请人： Johannes Lodermeyer ,  Edmund Riedl ,  Werner Robl

    发明人： Johannes Lodermeyer ,  Edmund Riedl ,  Werner Robl

    IPC分类号： C25D3/56

    CPC分类号： C25D3/44 ,  C25D17/002 ,  C25D17/004 ,  C25D21/11

    摘要： A method of making an integrated circuit including composition of matter for electrodepositing of aluminium is disclosed. One embodiment includes a bath having a solution of selected aluminium salts in a substantially anhydrous organic solvent, to uses of certain aluminium salts for electrodepositing and to processes for electrodepositing aluminium.

    摘要翻译： 公开了一种制造集成电路的方法，该集成电路包括用于电沉积铝的物质的组成。 一个实施方案包括具有选定的铝盐在基本上无水的有机溶剂中的溶液的浴，使用某些铝盐进行电沉积和电沉积铝的方法。

    Integration scheme for metal gap fill, with fixed abrasive CMP
    17.
    发明授权
    Integration scheme for metal gap fill, with fixed abrasive CMP 有权
    金属间隙填充的集成方案，固定磨料CMP

    公开(公告)号：US06943114B2

    公开(公告)日：2005-09-13

    申请号：US10084194

    申请日：2002-02-28

    申请人： Peter Wrschka ,  Werner Robl ,  Thomas Goebel

    发明人： Peter Wrschka ,  Werner Robl ,  Thomas Goebel

    IPC分类号： H01L21/3105 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31053 ,  Y10S438/959

    摘要： In a method of planarizing a semiconductor wafer, the improvement comprising polishing above metal interconnect lines to uniformly polish the topography of the wafer to a predetermined endpoint on the wafer sufficiently close above the metal interconnect lines, yet far enough away from the lines to prevent damage to the lines, comprising:a) filling gaps between metal interconnect lines of an inter metal dielectric in a wafer being formed, by depositing HDP fill on top of the metal interconnects, between the metal interconnects, and on the surface of a dielectric layer between the metal interconnects to create an HDP overfill;b) contacting the surface of HDP overfill of the processed semiconductor wafer from step a) with a fixed abrasive polishing pad; andc) relatively moving the wafer and the fixed abrasive polishing pad to affect a polishing rate sufficient to reach a predetermined endpoint and uniformly planar surface on the wafer sufficiently close above the metal interconnect lines and yet far enough away from the lines to prevent damage to the lines.

    摘要翻译： 在平坦化半导体晶片的方法中，改进包括在金属互连线上方抛光，以将晶片的形貌均匀地抛光到晶片上的预定端点上，该晶圆足够靠近金属互连线上方，远离线路远离线以防止损坏 包括：a）通过在金属互连件的顶部，金属互连件之间以及电介质层的表面上沉积HDP填充物，填充在形成的晶片之间的金属互连线之间的间隙， 金属互连以产生HDP溢出; b）使来自步骤a）的经处理的半导体晶片的HDP的填充表面与固定的研磨抛光垫接触; 以及c）相对移动所述晶片和所述固定研磨抛光垫以影响足以达到所述晶片上的预定端点和所述晶片上的均匀平坦表面的抛光速率，所述平坦表面足够靠近所述金属互连线，并且远离所述线远离所述线，以防止损坏 线条。

    Spin device
    20.
    发明授权
    Spin device 有权
    旋转装置

    公开(公告)号：US07974120B2

    公开(公告)日：2011-07-05

    申请号：US12358721

    申请日：2009-01-23

    申请人： Gerhard Poeppel ,  Hans-Joerg Timme ,  Werner Robl

    发明人： Gerhard Poeppel ,  Hans-Joerg Timme ,  Werner Robl

    IPC分类号： G11C11/00

    CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F10/3254

    摘要： According to an embodiment of the present invention, a spin device includes an intermediate semiconductor region arranged between a first terminal and a second terminal, wherein the first terminal is adapted to provide a current having a first degree of spin polarization to the intermediate semiconductor region, and wherein the second terminal is adapted to output the current having a second degree of spin polarization. The spin device further includes a spin selective scattering structure abutting the intermediate semiconductor region, the spin selective scattering structure being adapted such that the first degree of spin polarization is altered to be the second degree, wherein the spin selective scattering structure comprises a control electrode being electrically insulated from the intermediate semiconductor region, and wherein the control electrode is adapted to apply an electrical field perpendicular to a direction of the current through the intermediate semiconductor region to control a magnitude of the current.

    摘要翻译： 根据本发明的实施例，自旋装置包括布置在第一端子和第二端子之间的中间半导体区域，其中第一端子适于向中间半导体区域提供具有第一自旋极化度的电流， 并且其中所述第二端子适于输出具有第二自旋极化度的电流。 自旋装置还包括邻接中间半导体区域的自旋选择性散射结构，自旋选择性散射结构适于使第一自旋极化程度改变为第二程度，其中自旋选择性散射结构包括控制电极 与中间半导体区域电绝缘，并且其中控制电极适于施加垂直于通过中间半导体区域的电流的方向的电场以控制电流的大小。