公开(公告)号：US08785259B2

公开(公告)日：2014-07-22

申请号：US13722028

申请日：2012-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota Imahayashi ,  Shinobu Furukawa ,  Atsuo Isobe ,  Yasuyuki Arai ,  Shunpei Yamazaki

IPC: H01L21/00

CPC classification number: H01L51/0512 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/31683 ,  H01L51/0002 ,  H01L51/0055 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0566

Abstract: It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

Abstract translation: 本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。 本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜 电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

公开(公告)号：US08629434B2

公开(公告)日：2014-01-14

申请号：US13875573

申请日：2013-05-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuyuki Arai

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/7869

Abstract: A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.

Abstract translation: 显示装置包括用作形成在基板上的栅电极的第一布线，形成在第一布线上的栅极绝缘膜，设置在栅极绝缘膜上的第二布线和电极层，以及形成的高电阻氧化物半导体层 包括在第二布线和电极层之间。 在该结构中，第二布线使用低电阻氧化物半导体层上的低电阻氧化物半导体层和导电层的堆叠形成，并且使用低电阻氧化物半导体层的堆叠形成电极层 并且层叠的导电层露出作为低电阻氧化物半导体层的像素电极的区域。

公开(公告)号：US20140011331A1

公开(公告)日：2014-01-09

申请号：US14021168

申请日：2013-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

IPC: H01L29/66

CPC classification number: H01L29/78621 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13396 ,  G02F2001/13398 ,  G02F2001/136245 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/1288 ,  H01L29/167 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/78672 ,  H01L29/78675 ,  Y10S438/919

Abstract: A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

Abstract translation: 驱动电路的p沟道TFT具有单个漏极结构及其n沟道TFT，LDD结构。 像素TFT具有LDD结构。 设置在像素单元中的像素电极通过在至少由无机绝缘材料形成的保护绝缘膜中钻孔并形成在像素TFT的栅电极之上的孔连接到像素TFT，并且在层间绝缘膜 设置在与其紧密接触的绝缘膜上。 这些处理步骤使用6到8张照片掩模。

公开(公告)号：US20130105805A1

公开(公告)日：2013-05-02

申请号：US13661497

申请日：2012-10-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Hideaki Kuwabara

IPC: H01L29/786

CPC classification number: H01L29/786 ,  G02F1/13452 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/78678 ,  H01L2029/7863

Abstract: A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.

Abstract translation: 形成在像素区域中的像素TFT通过沟道蚀刻型反交错型TFT形成在第一衬底上，并且源极区域和漏极区域的图案化，并且通过相同的光掩模进行像素电极的图案化。 通过使用具有晶体半导体层的TFT和依赖于驱动电路的输入输出端子形成的驱动电路被作为一个单元。 在第三基板上形成多个单元，之后将第三基板分割成单独的单元，并将所获得的棒驱动器安装在第一基板上。

公开(公告)号：US11809030B2

公开(公告)日：2023-11-07

申请号：US18115331

申请日：2023-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satohiro Okamoto ,  Yasuyuki Arai ,  Ikuko Kawamata ,  Atsushi Miyaguchi ,  Yoshitaka Moriya

IPC: G09G3/36 ,  G02F1/1333 ,  G02F1/1345 ,  G09G5/00 ,  H01L27/12 ,  G06F3/041 ,  G09G3/20 ,  H05K1/18 ,  G02F1/167 ,  G09G3/3208 ,  G09G5/39

CPC classification number: G02F1/133305 ,  G02F1/13452 ,  G06F3/0412 ,  G09G3/2096 ,  G09G3/3611 ,  G09G5/003 ,  H01L27/1218 ,  H01L27/1225 ,  H05K1/189 ,  G02F1/167 ,  G06F2203/04102 ,  G09G3/3208 ,  G09G3/36 ,  G09G5/39 ,  G09G2300/0421 ,  G09G2300/0478 ,  H05K2201/10128

Abstract: The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.

公开(公告)号：US11513562B2

公开(公告)日：2022-11-29

申请号：US17140473

申请日：2021-01-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Ikuko Kawamata ,  Atsushi Miyaguchi ,  Yoshitaka Moriya

IPC: G06F1/16 ,  G09G3/36 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1345 ,  G06F3/147 ,  G09G3/20 ,  G09G3/00 ,  G09G5/00 ,  G09G3/3225 ,  G06F3/14 ,  G09G3/34

Abstract: An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.

公开(公告)号：US10134766B2

公开(公告)日：2018-11-20

申请号：US15292544

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiko Hayakawa ,  Yuta Moriya ,  Junya Goto ,  Yasuyuki Arai

IPC: H01L27/12 ,  G02F1/1339 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G09G3/36

Abstract: The number of photolithography steps used for manufacturing a transistor is reduced to less than the conventional one and a highly reliable semiconductor device is provided. The present invention relates to a semiconductor device including a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer.

公开(公告)号：US09946139B2

公开(公告)日：2018-04-17

申请号：US15368079

申请日：2016-12-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: G02B26/00 ,  G02F1/167 ,  G02B26/02 ,  G09F9/37 ,  G09G3/34 ,  G02F1/1333 ,  G02F1/1368 ,  H01L51/00 ,  H01L51/05

Abstract: A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gale electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

公开(公告)号：US09780124B2

公开(公告)日：2017-10-03

申请号：US15221642

申请日：2016-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1343 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/30 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1333

CPC classification number: H01L27/124 ,  G02F1/133553 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/136295 ,  G02F2201/123 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02686 ,  H01L21/3003 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1285 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L27/3279 ,  H01L29/66537 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/78696

Abstract: An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

公开(公告)号：US09768239B2

公开(公告)日：2017-09-19

申请号：US15042786

申请日：2016-02-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: H01L27/14 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/32 ,  H01L27/3244 ,  H01L27/3246 ,  H01L29/78603 ,  H01L51/5221 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/5281 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

Abstract: Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP3 bond in terms of a short-distance order, although the films have an amorphous construction from a macroscopic viewpoint. The DLC films contain 95 to 70 atomic % carbon and 5 to 30 atomic % hydrogen, so that the DLC films are very hard and minute and have a superior gas barrier property and insulation performance.