公开(公告)号：US10319298B2

公开(公告)日：2019-06-11

申请号：US15815774

申请日：2017-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Atsushi Umezaki ,  Yasunori Yoshida ,  Hideaki Shishido ,  Takuya Kimishima ,  Yasuyuki Arai

IPC: G09G3/3233 ,  G09G3/00 ,  G09G3/20 ,  G09G3/3225

Abstract: In a display element such as an organic EL element, deterioration progresses due to light emission, and emission luminance is lowered even if the same voltage is applied to the display element. Therefore, use over time causes variations in luminance of each pixel, thereby a so-called “image burn-in” phenomenon occurs. Given this factor, the invention provides a display device which can reduce the difference in deterioration of a display element in each pixel and suppress variations in light emission of a display element in a pixel. It is prevented that only a specific pixel has a long accumulated lighting time. For that purpose, a gray scale of a display pattern is changed to prevent the difference in deterioration of display element in pixels from increasing. Alternatively, a specific display pattern is prevented from being fixedly displayed in a specific region. Further alternatively, a pixel lagging behind in deterioration is deteriorated so that the accumulated lighting time of pixels is equal to each other.

公开(公告)号：US09853235B2

公开(公告)日：2017-12-26

申请号：US14323243

申请日：2014-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: H01L51/52 ,  H01L27/32 ,  H05B33/04

CPC classification number: H01L51/5237 ,  H01L27/3244 ,  H01L51/524 ,  H01L51/5259 ,  H01L51/5275 ,  H01L51/5281 ,  H01L2251/5315 ,  H05B33/04

Abstract: An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic EL layer is prevented from oxidizing.

公开(公告)号：US09564688B2

公开(公告)日：2017-02-07

申请号：US15155096

申请日：2016-05-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukie Suzuki ,  Yasuyuki Arai ,  Shunpei Yamazaki

IPC: H01L27/108 ,  H01Q9/04 ,  G06K19/077 ,  H01Q1/22 ,  H01Q23/00 ,  H01L23/66 ,  H01L23/00 ,  H01L27/088 ,  H01M10/04 ,  H01M10/46

CPC classification number: H01Q9/0407 ,  G06K19/07745 ,  G06K19/07749 ,  G06K19/07786 ,  H01L23/66 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L27/088 ,  H01L2223/6677 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01M10/0436 ,  H01M10/465 ,  H01M2220/30 ,  H01Q1/2208 ,  H01Q1/2283 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.

Abstract translation: 本发明的目的是提供一种能够提高机械强度的无线芯片，以及具有高耐久性的无线芯片。 无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线以及连接芯片和天线的导电层。 此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，传感器装置，连接芯片和天线的导电层以及连接芯片和传感器的导电层 设备。 此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，电池，连接芯片和天线的导电层以及连接芯片和电池的导电层。

公开(公告)号：US09391209B2

公开(公告)日：2016-07-12

申请号：US14024962

申请日：2013-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromichi Godo ,  Yasuyuki Arai ,  Satohiro Okamoto ,  Mari Terashima ,  Eriko Nishida ,  Junpei Sugao

IPC: H01L27/14 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606

Abstract: An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.

公开(公告)号：US09368514B2

公开(公告)日：2016-06-14

申请号：US14737672

申请日：2015-06-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

IPC: H01L29/04 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1368 ,  H01L21/67 ,  H01L29/66

CPC classification number: H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

Abstract: [Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.

Abstract translation: [问题]在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器。

公开(公告)号：US09236400B2

公开(公告)日：2016-01-12

申请号：US14193597

申请日：2014-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1345 ,  H01L23/552 ,  H01L23/60 ,  H01L23/00 ,  H01L27/146

CPC classification number: H01L27/1222 ,  G02F1/13454 ,  H01L23/552 ,  H01L23/60 ,  H01L24/83 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/14601 ,  H01L29/78621 ,  H01L29/78624 ,  H01L2924/00011 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/83851 ,  H01L2924/00

Abstract: A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

Abstract translation: 驱动电路的p沟道TFT具有单个漏极结构及其n沟道TFT，GOLD结构或LDD结构。 像素TFT具有LDD结构。 设置在像素部分中的像素电极通过在至少由无机绝缘材料形成的保护绝缘膜中钻孔并形成在像素TFT的栅电极之上的孔连接到像素TFT，并且在设置在像素TFT上的层间绝缘膜中 绝缘膜与其紧密接触。 这些处理步骤使用6到8张照片掩模。

公开(公告)号：US09112043B2

公开(公告)日：2015-08-18

申请号：US14151183

申请日：2014-01-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuyuki Arai

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/45 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/45 ,  H01L29/7869

Abstract: A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.

Abstract translation: 显示装置包括用作形成在基板上的栅电极的第一布线，形成在第一布线上的栅极绝缘膜，设置在栅极绝缘膜上的第二布线和电极层，以及形成的高电阻氧化物半导体层 包括在第二布线和电极层之间。 在该结构中，第二布线使用低电阻氧化物半导体层上的低电阻氧化物半导体层和导电层的堆叠形成，并且使用低电阻氧化物半导体层的堆叠形成电极层 并且层叠的导电层露出作为低电阻氧化物半导体层的像素电极的区域。

公开(公告)号：US09099579B2

公开(公告)日：2015-08-04

申请号：US14331664

申请日：2014-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/0682 ,  Y02E10/547

Abstract: A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.

Abstract translation: 具有抗反射结构的光电转换装置。 在光电转换装置中，作为光接收面的半导体基板的前表面被一组晶须（一组纳米线）覆盖，从而表面反射减小。 换句话说，在半导体基板的受光面侧设置半导体层，该半导体层具有晶体长大的前表面，使晶须形成。 半导体层具有给定的不均匀结构，因此具有减少半导体衬底的前表面上的反射并提高转换效率的效果。

公开(公告)号：US09059045B2

公开(公告)日：2015-06-16

申请号：US14082659

申请日：2013-11-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

IPC: H01L29/04 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/67 ,  H01L29/66

CPC classification number: H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

Abstract: A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized, FIG. 2.

Abstract translation: 在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。 通过在三个光刻步骤中通过使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n沟道TFT的像素TFT部分的液晶显示装置， 并且可以实现存储电容器。 2。

公开(公告)号：US20140326307A1

公开(公告)日：2014-11-06

申请号：US14331664

申请日：2014-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: H01L31/0224

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/0682 ,  Y02E10/547

Abstract: A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.

Abstract translation: 具有抗反射结构的光电转换装置。 在光电转换装置中，作为光接收面的半导体基板的前表面被一组晶须（一组纳米线）覆盖，从而表面反射减小。 换句话说，在半导体基板的受光面侧设置半导体层，该半导体层具有晶体长大的前表面，使晶须形成。 半导体层具有给定的不均匀结构，因此具有减少半导体衬底的前表面上的反射并提高转换效率的效果。