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公开(公告)号：US20150221822A1
公开(公告)日：2015-08-06
申请号：US14690036
申请日：2015-04-17
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
CPC classification number: H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
Abstract translation: 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 只有最靠近有源区的超晶格层的最后一层掺杂有硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。
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公开(公告)号：US20170309775A1
公开(公告)日：2017-10-26
申请号：US15643403
申请日：2017-07-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Kwang Joong Kim , Chang Suk Han , Kyung Hee Ye , Seung Kyu Choi , Ki Bum Nam , Nam Yoon Kim , Kyung Hae Kim , Ju Hyung Yoon
CPC classification number: H01L33/06 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/32
Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
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公开(公告)号：US09577144B2
公开(公告)日：2017-02-21
申请号：US14784007
申请日：2014-03-07
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyo Shik Choi , Jung Hwan Hwang , Chang Suk Han
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/04 , H01L33/14 , H01L33/145 , H01L33/32
Abstract: Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.
Abstract translation: 公开了一种紫外线发光装置。 发光装置包括：包括GaN层的n型接触层; 包括AlGaN或AlInGaN层的p型接触层; 以及位于n型接触层和p型接触层之间的多量子阱结构的有源区。 此外，多量子阱结构的有源区包括厚度小于2nm的GaN或InGaN层，辐射峰值波长为340nm至360nm的紫外线。
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公开(公告)号：US09312447B2
公开(公告)日：2016-04-12
申请号：US14526110
申请日：2014-10-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Mi So Ko , A Ram Cha Lee
Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.
Abstract translation: 公开了一种近紫外发光装置。 发光器件包括n型接触层，p型接触层，设置在n型接触层和p型接触层之间的多量子阱结构的有源区，以及至少一个电子 控制层设置在n型接触层和有源区之间。 n型接触层和p型接触层中的每一个包括AlInGaN或AlGaN层，并且电子控制层由AlInGaN或AlGaN形成。 此外，电子控制层包含比相邻层更大量的Al，以阻止电子流入有源区域。 因此，电子迁移率恶化，从而提高有源区域中的电子和空穴的复合率。
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公开(公告)号：US20160064598A1
公开(公告)日：2016-03-03
申请号：US14784007
申请日：2014-03-07
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Hyo Shik Choi , Jung Hwan Hwang , Chang Suk Han
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/04 , H01L33/14 , H01L33/145 , H01L33/32
Abstract: Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.
Abstract translation: 公开了一种紫外线发光装置。 发光器件包括：包括GaN层的n型接触层; 包括AlGaN或AlInGaN层的p型接触层; 以及位于n型接触层和p型接触层之间的多量子阱结构的有源区。 此外，多量子阱结构的有源区包括厚度小于2nm的GaN或InGaN层，辐射峰值波长为340nm至360nm的紫外线。
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Patent Agency Ranking
公开(公告)号：US09252012B2
公开(公告)日：2016-02-02
申请号：US14833732
申请日：2015-08-24
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Hwa Mok Kim , Chang Suk Han , Hyo Shik Choi , Mi So Ko
IPC: H01L21/302 , H01L31/0328 , H01L29/06 , H01L21/02 , H01L21/306 , H01L21/308 , H01L29/20
CPC classification number: H01L21/0254 , C30B25/00 , C30B25/02 , C30B25/186 , C30B29/403 , H01L21/02002 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0262 , H01L21/02664 , H01L21/30621 , H01L21/3081 , H01L21/3086 , H01L29/2003
Abstract: A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.
Abstract translation: 一种制造氮化物衬底的方法，包括制备生长衬底并在生长衬底上设置牺牲层。 牺牲层包括氮化物水平蚀刻层，其包括形成在氮化物水平蚀刻层上的铟基氮化物和上部氮化物牺牲层。 制造氮化物衬底的方法还包括水平蚀刻氮化物水平蚀刻层，至少部分地通过上部氮化物牺牲层形成至少一个蚀刻孔，使得至少一个蚀刻孔在氮化物水平蚀刻层中在水平方向上扩展 在氮化物水平蚀刻层的水平蚀刻期间，通过氢化物气相外延（HVPE）在上部氮化物牺牲层上形成氮化物外延层，并在氮化物水平蚀刻层从生长衬底分离氮化物外延层。
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公开(公告)号：US09224913B2
公开(公告)日：2015-12-29
申请号：US13853361
申请日：2013-03-29
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Mi So Ko , A Ram Cha Lee
Abstract: Disclosed herein is an ultraviolet (UV) light emitting device. The light emitting device includes an n-type contact layer including a GaN layer; a p-type contact layer including a GaN layer; and an active layer of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, the active area configured to emit near ultraviolet light at wavelengths of 365 nm to 309 nm.
Abstract translation: 本文公开了一种紫外线（UV）发光器件。 发光器件包括：包括GaN层的n型接触层; 包括GaN层的p型接触层; 以及设置在n型接触层和p型接触层之间的多量子阱结构的有源层，有源区被配置为发射波长为365nm至309nm的近紫外光。
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公开(公告)号：US09093595B2
公开(公告)日：2015-07-28
申请号：US14154460
申请日：2014-01-14
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Daewoong Suh
IPC: H01L31/102 , H01L31/109 , H01L31/0304 , H01L31/0236 , H01L31/0216 , H01L31/07
CPC classification number: H01L31/109 , H01L31/02162 , H01L31/02327 , H01L31/0236 , H01L31/03044 , H01L31/03048 , H01L31/07 , H01L31/108 , H01L31/1848 , Y02E10/544
Abstract: TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.
Abstract translation: TA光检测装置，包括基板，在基板上形成的带通滤波器层，形成在带通滤波器层上的光吸收层，形成在光吸收层的一部分上的肖特基层，第一电极层 形成在肖特基层的一部分上，以及形成在光吸收层上并与肖特基层间隔开的第二电极层。
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公开(公告)号：US10177273B2
公开(公告)日：2019-01-08
申请号：US14811253
申请日：2015-07-28
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Mi So Ko , A Ram Cha Lee
Abstract: A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.
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公开(公告)号：US10164150B2
公开(公告)日：2018-12-25
申请号：US15096252
申请日：2016-04-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Suk Han , Hwa Mok Kim , Hyo Shik Choi , Mi So Ko , A Ram Cha Lee
Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.
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