公开(公告)号：US10411164B2

公开(公告)日：2019-09-10

申请号：US15757636

申请日：2016-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Chan Seob Shin ,  Keum Ju Lee ,  Seom Geun Lee ,  Myoung Hak Yang ,  Jacob J. Richardson ,  Evan C. O'Hara

IPC: H01L33/42 ,  G02F1/1335 ,  H01L33/10 ,  H01L33/32 ,  H01L33/62 ,  H01L33/38 ,  C30B29/16 ,  H01L33/00 ,  C30B7/00

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arc sec.

公开(公告)号：US10181548B2

公开(公告)日：2019-01-15

申请号：US15490492

申请日：2017-04-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Keum Ju Lee ,  Seom Geun Lee ,  Kyoung Wan Kim ,  Yong Woo Ryu ,  Mi Na Jang

IPC: H01L33/14 ,  H01L27/15 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

公开(公告)号：US10172190B2

公开(公告)日：2019-01-01

申请号：US15579370

申请日：2016-05-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Mae Yi Kim ,  Seom Geun Lee ,  Yeo Jin Yoon ,  Jin Woong Lee ,  Yong Woo Ryu

IPC: H01L33/00 ,  H01L27/15 ,  H05B33/08 ,  H01L33/14 ,  H01L33/36

Abstract: A light emitting diode including a first semiconductor layer and a plurality of mesas including a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer including an exposed region between the plurality of mesas, a current blocking layer disposed on a portion of the plurality of mesas and a portion of the exposed region, a transparent electrode layer covering the second semiconductor layer and the current blocking layer, and a second electrode disposed on the current blocking layer and the transparent electrode layer and electrically connected to the second semiconductor layer. The current blocking layer includes a connecting portion extending from a first mesa to a second mesa adjacent to the first mesa and a protruding portion protruding from the connecting portion and disposed on the exposed region.

公开(公告)号：US20180212102A1

公开(公告)日：2018-07-26

申请号：US15934589

申请日：2018-03-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Keum Ju Lee ,  Seom Geun Lee ,  Jun Ho Yun ,  Woo Chul Gwak ,  Sam Seok Jang

IPC: H01L33/24 ,  H01L33/42 ,  H01L33/62 ,  H01L33/54 ,  H01L33/10 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/05012 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/1815 ,  H01L2924/00014

Abstract: A light emitting element comprises: a substrate including protrusions; and a light emitting structure located on the substrate. The protrusions are disposed in a honeycomb pattern and include a first protrusion and second to seventh protrusions which are adjacent to the first protrusion and spaced equidistant from the first protrusions. The angle between a first vector line extending in a direction from the center of the first protrusion toward the center of the second protrusion and a second vector line extending in a direction from the center of the first protrusion to the center of the fourth projection is 120° , the angle between the second vector line and the third vector line extending in a direction from the center of the first projection to the center of the sixth protrusion is 120.

公开(公告)号：US20180138370A1

公开(公告)日：2018-05-17

申请号：US15870687

申请日：2018-01-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chan Seob Shin ,  Myoung Hak Yang ,  Yeo Jin Yoon ,  Seom Geun Lee

IPC: H01L33/42 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L33/42 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38

Abstract: An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

公开(公告)号：USD770989S1

公开(公告)日：2016-11-08

申请号：US29537275

申请日：2015-08-24

Applicant: Seoul Viosys Co., Ltd.

Designer： Mae Yi Kim ,  Seom Geun Lee ,  Yeo Jin Yoon

公开(公告)号：US09379282B1

公开(公告)日：2016-06-28

申请号：US15013708

申请日：2016-02-02

Applicant: Seoul Viosys Co., Ltd

Inventor： Seom Geun Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Mae Yi Kim

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/14

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other to expose a surface of the substrate, a first transparent layer disposed on and electrically connected to the first light emitting cell, first connection section disposed on a portion of the first light emitting cell, a second connection section disposed on a portion of the second light emitting cell, a first interconnection and a second interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the first and second interconnections and a side surface of the first light emitting cell.

Abstract translation: 一种发光二极管，包括第一发光单元和设置在基板上并彼此间隔开以暴露基板的表面的第二发光单元，设置在第一发光单元上并电连接到第一发光单元的第一透明层， 设置在第一发光单元的一部分上的第一连接部，设置在第二发光单元的一部分上的第二连接部，电连接第一发光单元和第二发光单元的第一互连和第二互连， 以及设置在第一和第二互连之间的绝缘层和第一发光单元的侧表面。

公开(公告)号：US12009466B2

公开(公告)日：2024-06-11

申请号：US17983239

申请日：2022-11-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Gyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee ,  Jong Hyeon Chae

IPC: H01L33/62 ,  H01L33/52

CPC classification number: H01L33/62 ,  H01L33/52

Abstract: A light emitting device including first, second, and third light emitting parts one over another along a first direction, a first conductive pattern at least partially disposed between the second and third light emitting parts and including a first portion extending in a second direction perpendicular to the first direction and electrically coupled with the second light emitting part, and a second portion extending from one end of the first portion, a second conductive pattern disposed on and electrically coupled to the third light emitting part, and a first passivation covering the first light emitting part and including a first portion extending in the second direction and a second portion extending from one end of the first portion and forming an inclined angle with the second direction, in which the first conductive pattern at least partially overlaps with the second portion of the first passivation.

公开(公告)号：US11961873B2

公开(公告)日：2024-04-16

申请号：US17314562

申请日：2021-05-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Seong Kyu Jang ,  Yong Woo Ryu

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/382 ,  H01L33/62

Abstract: A light emitting device for a display according to an exemplary embodiment includes a first LED stack, a second LED stack located under the first LED stack, and a third LED stack located under the second LED stack. The light emitting device further includes a first bonding layer, a second bonding layer, a first planarization layer, a second planarization layer, lower buried vias, and upper buried vias. The first planarization layer is recessed inwardly to expose an edge of the second LED stack.

公开(公告)号：US11437353B2

公开(公告)日：2022-09-06

申请号：US17096289

申请日：2020-11-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Seong Kyu Jang ,  Yong Woo Ryu ,  Jong Hyeon Chae

IPC: H01L25/075 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting device including a first LED stack, a second LED stack, and a third LED stack each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the second LED stack, a second planarization layer disposed on the first LED stack, lower buried vias passing through the first planarization layer, the second LED stack, and the first bonding layer and electrically connected to the semiconductor layers of the third LED stack, respectively, and upper buried vias passing through the second planarization layer and the first LED stack, in which a width of an upper end of each of the lower buried vias and the upper buried vias is greater than a width of a corresponding through hole.