公开(公告)号：US11488933B2

公开(公告)日：2022-11-01

申请号：US16918281

申请日：2020-07-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Pandi C. Marimuthu ,  Il Kwon Shim ,  Byung Joon Han

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L21/786 ,  H01L21/784 ,  H01L21/782 ,  H01L21/82 ,  H01L21/78

Abstract: A semiconductor device includes a semiconductor die and an encapsulant deposited over and around the semiconductor die. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. A groove is formed in the base semiconductor material. The semiconductor wafer is singulated through the groove to separate the semiconductor die. The semiconductor die are disposed over a carrier with a distance of 500 micrometers (μm) or less between semiconductor die. The encapsulant covers a sidewall of the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while the encapsulant remains devoid of the fan-in interconnect structure. A portion of the encapsulant is removed from a non-active surface of the semiconductor die. The device is singulated through the encapsulant while leaving encapsulant disposed covering a sidewall of the semiconductor die. The encapsulant covering the sidewall includes a thickness of 50 μm or less.

公开(公告)号：US10777528B2

公开(公告)日：2020-09-15

申请号：US15615693

申请日：2017-06-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Pandi C. Marimuthu ,  Il Kwon Shim ,  Byung Joon Han

IPC: H01L21/56 ,  H01L21/786 ,  H01L21/784 ,  H01L23/00 ,  H01L23/31 ,  H01L21/782 ,  H01L21/82 ,  H01L21/78

Abstract: A semiconductor device includes a semiconductor die and an encapsulant deposited over and around the semiconductor die. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. A groove is formed in the base semiconductor material. The semiconductor wafer is singulated through the groove to separate the semiconductor die. The semiconductor die are disposed over a carrier with a distance of 500 micrometers (μm) or less between semiconductor die. The encapsulant covers a sidewall of the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while the encapsulant remains devoid of the fan-in interconnect structure. A portion of the encapsulant is removed from a non-active surface of the semiconductor die. The device is singulated through the encapsulant while leaving encapsulant disposed covering a sidewall of the semiconductor die. The encapsulant covering the sidewall includes a thickness of 50 μm or less.

公开(公告)号：US10658330B2

公开(公告)日：2020-05-19

申请号：US15626511

申请日：2017-06-19

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  Yaojian Lin ,  Pandi C. Marimuthu

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L21/78

Abstract: A semiconductor device includes a standardized carrier. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. The semiconductor wafer is singulated through a first portion of the base semiconductor material to separate the semiconductor die. The semiconductor die are disposed over the standardized carrier. A size of the standardized carrier is independent from a size of the semiconductor die. An encapsulant is deposited over the standardized carrier and around the semiconductor die. An interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The semiconductor device is singulated through the encapsulant. Encapsulant remains disposed on a side of the semiconductor die. Alternatively, the semiconductor device is singulated through a second portion of the base semiconductor and through the encapsulant to remove the second portion of the base semiconductor and encapsulant from the side of the semiconductor die.

公开(公告)号：US10388612B2

公开(公告)日：2019-08-20

申请号：US15664734

申请日：2017-07-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Yaojian Lin ,  Byung Joon Han ,  Rajendra D. Pendse ,  Il Kwon Shim ,  Pandi C. Marimuthu ,  Won Kyoung Choi ,  Linda Pei Ee Chua

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L23/552 ,  H01L21/56 ,  H01L21/683

Abstract: A semiconductor device has a first component. A modular interconnect structure is disposed adjacent to the first component. A first interconnect structure is formed over the first component and modular interconnect structure. A shielding layer is formed over the first component, modular interconnect structure, and first interconnect structure. The shielding layer provides protection for the enclosed semiconductor devices against EMI, RFI, or other inter-device interference, whether generated internally or from external semiconductor devices. The shielding layer is electrically connected to an external low-impedance ground point. A second component is disposed adjacent to the first component. The second component includes a passive device. An LC circuit includes the first component and second component. A semiconductor die is disposed adjacent to the first component. A conductive adhesive is disposed over the modular interconnect structure. The modular interconnect structure includes a height less than a height of the first component.

公开(公告)号：US10217873B2

公开(公告)日：2019-02-26

申请号：US15394337

申请日：2016-12-29

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  Heap Hoe Kuan

IPC: H01L21/00 ,  H01L31/0203 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L27/146 ,  H01L31/02 ,  H01L31/18 ,  H05K1/18 ,  H05K3/40

Abstract: A semiconductor device has a first semiconductor die including an active region formed on a surface of the first semiconductor die. The active region of the first semiconductor die can include a sensor. An encapsulant is deposited over the first semiconductor die. A conductive layer is formed over the encapsulant and first semiconductor die. An insulating layer can be formed over the first semiconductor die. An opening is formed in the insulating layer over the active region. A transmissive layer is formed over the first semiconductor die including the active region. The transmissive layer includes an optical dielectric material or an optical transparent or translucent material. The active region is responsive to an external stimulus passing through the transmissive layer. A plurality of bumps is formed through the encapsulant and electrically connected to the conductive layer. A second semiconductor die is disposed adjacent to the first semiconductor die.

公开(公告)号：US20180294236A1

公开(公告)日：2018-10-11

申请号：US16005387

申请日：2018-06-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  KyoungHee Park ,  Yaojian Lin ,  KyoWang Koo ,  In Sang Yoon ,  SeungYong Chai ,  SungWon Cho ,  SungSoo Kim ,  Hun Teak Lee ,  DeokKyung Yang

IPC: H01L23/552 ,  H01L23/498 ,  H01L21/683 ,  H01L21/48 ,  H01L23/00 ,  H01L25/16 ,  H01L23/31 ,  H01L21/56

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.

公开(公告)号：US20180294235A1

公开(公告)日：2018-10-11

申请号：US16005348

申请日：2018-06-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  KyoungHee Park ,  Yaojian Lin ,  KyoWang Koo ,  In Sang Yoon ,  SeungYong Chai ,  SungWon Cho ,  SungSoo Kim ,  Hun Teak Lee ,  DeokKyung Yang

IPC: H01L23/552 ,  H01L23/498 ,  H01L21/683 ,  H01L21/48 ,  H01L23/00 ,  H01L25/16 ,  H01L23/31 ,  H01L21/56

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.

公开(公告)号：US09997468B2

公开(公告)日：2018-06-12

申请号：US15091049

申请日：2016-04-05

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  KyoungHee Park ,  Yaojian Lin ,  KyoWang Koo ,  In Sang Yoon ,  SeungYong Chai ,  SungWon Cho ,  SungSoo Kim ,  Hun Teak Lee ,  DeokKyung Yang

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/683 ,  H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L25/16 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L21/486 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L24/97 ,  H01L25/16 ,  H01L2221/68327 ,  H01L2224/13111 ,  H01L2224/16227 ,  H01L2224/97 ,  H01L2924/141 ,  H01L2924/143 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/3025 ,  H01L2924/01029 ,  H01L2224/81

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: a substrate with internal circuitry between a substrate top side, a substrate bottom side, and vertical sides; an integrated circuit coupled to the internal circuitry; a molded package body formed directly on the integrated circuit and the substrate top side of the substrate; and a conductive conformal shield structure applied directly on the molded package body, the vertical sides, and to extend below the substrate bottom side coupled to the internal circuitry.

公开(公告)号：US09934998B2

公开(公告)日：2018-04-03

申请号：US15379178

申请日：2016-12-14

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  Won Kyoung Choi

IPC: H01L21/00 ,  H01L21/683 ,  H01L23/544 ,  H01L21/78 ,  H01L23/00 ,  H01L23/48

CPC classification number: H01L21/6836 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/481 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68381 ,  H01L2223/5446 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/81903 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/01082 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/83851 ,  H01L2224/05552 ,  H01L2224/81805

Abstract: A semiconductor device comprises a carrier including an adhesive disposed over the carrier. The semiconductor device further comprises a semiconductor wafer including a plurality of semiconductor die separated by a non-active region. A plurality of bumps is formed over the semiconductor die. The semiconductor wafer is mounted to the carrier with the adhesive disposed around the plurality of bumps. Irradiated energy is applied to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die. The semiconductor wafer is singulated along the modified region by applying stress to the semiconductor wafer. The adhesive is removed from around the plurality of bumps after singulating the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die comprising through silicon vias. The modified region optionally includes a plurality of vertically stacked modified regions.

公开(公告)号：US20170294406A1

公开(公告)日：2017-10-12

申请号：US15626511

申请日：2017-06-19

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Byung Joon Han ,  Il Kwon Shim ,  Yaojian Lin ,  Pandi C. Marimuthu

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/56

CPC classification number: H01L24/96 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05572 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/03

Abstract: A semiconductor device includes a standardized carrier. A semiconductor wafer includes a plurality of semiconductor die and a base semiconductor material. The semiconductor wafer is singulated through a first portion of the base semiconductor material to separate the semiconductor die. The semiconductor die are disposed over the standardized carrier. A size of the standardized carrier is independent from a size of the semiconductor die. An encapsulant is deposited over the standardized carrier and around the semiconductor die. An interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The semiconductor device is singulated through the encapsulant. Encapsulant remains disposed on a side of the semiconductor die. Alternatively, the semiconductor device is singulated through a second portion of the base semiconductor and through the encapsulant to remove the second portion of the base semiconductor and encapsulant from the side of the semiconductor die.