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公开(公告)号：US08988155B2
公开(公告)日：2015-03-24
申请号：US13689430
申请日：2012-11-29
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Paolo Ferrari , Laura Maria Castoldi , Benedetto Vigna
IPC: H03B5/32 , H01L41/053 , H01L41/083 , H01L41/23 , H03B1/00 , H01L29/66 , H01L41/29 , H03H3/02 , H03H9/05 , H03H9/10 , H01L41/09 , H03H9/17 , H03H3/007
CPC classification number: H03B1/00 , H01L29/66007 , H01L41/053 , H01L41/083 , H01L41/094 , H01L41/23 , H01L41/29 , H03B5/32 , H03H3/007 , H03H3/02 , H03H9/0538 , H03H9/10 , H03H9/1007 , H03H9/1057 , H03H9/172
Abstract: An oscillator device includes: a structural layer extending over a first side of a semiconductor substrate; a semiconductor cap set on the structural layer; a coupling region extending between and hermetically sealing the structural layer and the cap and forming a cavity within the oscillator device; first and second conductive paths extending between the substrate and the structural layer; first and second conductive pads housed in the cavity and electrically coupled to first terminal portions of the first and second conductive paths by first and second connection regions, respectively, which extend through and are insulated from the structural layer; a piezoelectric resonator having first and second ends electrically coupled, respectively, to the first and second conductive pads, and extending in the cavity; and third and fourth conductive pads positioned outside the cavity and electrically coupled to second terminal portions of the first and second conductive paths.
Abstract translation: 振荡器装置包括：在半导体衬底的第一侧上延伸的结构层; 设置在结构层上的半导体盖; 耦合区域，其在所述结构层和所述盖之间延伸并且密封所述结构层和所述盖并在所述振荡器装置内形成空腔; 在基板和结构层之间延伸的第一和第二导电路径; 第一和第二导电焊盘，其容纳在所述空腔中，并且分别通过延伸穿过所述第一和第二导电路径并与所述结构层绝缘的第一和第二连接区域电连接到所述第一和第二导电路径的第一端子部分; 压电谐振器，其具有分别电耦合到第一和第二导电焊盘并且在空腔中延伸的第一和第二端; 以及第三和第四导电焊盘，其位于腔的外部并电耦合到第一和第二导电路径的第二端子部分。
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12.发明授权公开(公告)号：US11855604B2
公开(公告)日：2023-12-26
申请号：US17031181
申请日：2020-09-24
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Federico Vercesi , Lorenzo Corso , Giorgio Allegato , Gabriele Gattere
CPC classification number: H03H9/1021 , B81B7/0038 , B81C1/00285 , H03H3/02 , H03H9/17 , B81B2201/0271 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0105 , B81C2203/0118 , H03H2003/022 , H03H2003/027 , H03H2009/155
Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.
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13.发明授权公开(公告)号：US11513016B2
公开(公告)日：2022-11-29
申请号：US17168059
申请日：2021-02-04
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Mikel Azpeitia Urquia , Giorgio Allegato
Abstract: A semiconductor device for ambient sensing including: a cap traversed by a hole; and a main body mechanically coupled to the cap so as to delimit a cavity, which is interposed between the main body and the cap. The main body includes a semiconductor body and a coupling structure, which is interposed between the semiconductor body and the cap and laterally delimits a channel, which fluidically couples the cavity and the hole. The channel performs a mechanical filtering that is finer than the mechanical filtering performed by the hole.
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公开(公告)号：US11317219B2
公开(公告)日：2022-04-26
申请号：US16693003
申请日：2019-11-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Matteo Perletti , Federico Vercesi , Silvia Adorno , Giorgio Allegato
Abstract: A method for manufacturing a filtering module comprising the steps of: forming a multilayer body comprising a filter layer of semiconductor material and having a thickness of less than 10 μm, a first structural layer coupled to a first side of the filter layer, and a second structural layer coupled to a second side, opposite to the first side, of the filter layer; forming a recess in the first structural layer, which extends throughout its thickness; removing selective portions, exposed through the recess, of the filter layer to form a plurality of openings, which extend throughout the thickness of the filter layer; and completely removing the second structural layer to connect fluidically the first and second sides of the filter layer, thus forming a filtering membrane designed to inhibit passage of contaminating particles.
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15.发明授权公开(公告)号：US10954121B2
公开(公告)日：2021-03-23
申请号：US16708271
申请日：2019-12-09
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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Patent Agency Ranking
公开(公告)号：US10473920B2
公开(公告)日：2019-11-12
申请号：US15245805
申请日：2016-08-24
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Sonia Costantini , Federico Vercesi , Roberto Carminati
Abstract: Disclosed herein is a micro-electro mechanical (MEMS) device including a substrate, and a MEMS mirror stack on the substrate. A first bonding layer seals against ingress of environmental contaminants and mechanically anchors the MEMS mirror stack to the substrate. A cap layer is formed on the MEMS mirror stack. A second boding layer seals against ingress of environmental contaminants and mechanically anchors the cap layer to the MEMS mirror stack.
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公开(公告)号：US09718675B2
公开(公告)日：2017-08-01
申请号：US14971639
申请日：2015-12-16
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Barbara Simoni , Carlo Valzasina , Lorenzo Corso
CPC classification number: B81B7/0074 , B81B7/007 , B81B7/008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81B2207/093 , B81B2207/096 , B81B2207/097 , B81C1/0023 , B81C2203/0118 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
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18.发明申请公开(公告)号：US20140230546A1
公开(公告)日：2014-08-21
申请号：US13922033
申请日：2013-06-19
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Barbara Simoni , Carlo Valzasina , Lorenzo Corso
IPC: B81B7/00
CPC classification number: B81B7/0074 , B81B7/007 , B81B7/008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81B2207/093 , B81B2207/096 , B81B2207/097 , B81C1/0023 , B81C2203/0118 , B81C2203/0792 , H01L2924/0002 , H01L2924/00
Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
Abstract translation: 微机电装置包括：容纳微机电结构的主体; 以及盖，其结合到主体并通过导电接合区域电耦合到微机电结构。 盖包括选择模块，其具有耦合到微机电结构的第一选择端子，第二选择端子和至少一个控制端子，并且可以通过控制端子控制以将第二选择端子耦合到相应的第一选择端子， 选择性地，对应于相应的操作条件的多个耦合配置之一。
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公开(公告)号：US12078799B2
公开(公告)日：2024-09-03
申请号：US18206363
申请日：2023-06-06
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Sonia Costantini , Federico Vercesi , Roberto Carminati
CPC classification number: G02B26/105 , B81C1/00317 , B81C1/00523 , G02B26/0833 , B81B2201/042 , B81C2203/0109 , B81C2203/019
Abstract: A method of making a MEMS device including forming a mirror stack on a handle layer, applying a first bonding layer to the mirror stack, and disposing a substrate on the first bonding layer. The handle layer is removed and a second bonding layer is applied. A cap layer is disposed on the second bonding layer. The mirror stack is formed by disposing a silicon layer on the handle layer, disposing a first insulating layer on the silicon layer, etching portions of the first insulating layer, and depositing a first conductive layer on the first insulating layer. The formation also includes depositing a second insulating layer on the first conductive layer, a portion of the second insulating layer to expose a portion of the first conductive layer exposed, and forming a conductive pad on the exposed portion of the first conductive layer.
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公开(公告)号：US11945712B2
公开(公告)日：2024-04-02
申请号：US17320993
申请日：2021-05-14
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Lorenzo Corso , Ilaria Gelmi , Carlo Valzasina
CPC classification number: B81B3/0051 , B81C1/00595 , B81B2201/0235 , B81B2201/0242 , B81C2201/0198
Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.
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