公开(公告)号：US10553684B2

公开(公告)日：2020-02-04

申请号：US15825344

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/028 ,  H01L31/09 ,  H01L31/101 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L51/00 ,  H01L51/05 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US10096735B2

公开(公告)日：2018-10-09

申请号：US15668997

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/107 ,  H01L31/105 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0336 ,  H01L29/66 ,  H01L29/267 ,  H01L31/109 ,  H01L29/16

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US09960309B2

公开(公告)日：2018-05-01

申请号：US15181804

申请日：2016-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Seongjun Park

IPC: H01L31/109 ,  H01L31/0392 ,  H01L31/0336 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/109 ,  H01L31/02161 ,  H01L31/022466 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/072 ,  Y02E10/50

Abstract: A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of an opposite type to the first type impurity, a transparent electrode formed on a second surface of the second semiconductor layer, the second surface being opposite a first surface on which the semiconductor substrate is formed, and a barrier layer disposed between the second semiconductor layer and the semiconductor substrate or between the second semiconductor layer and the transparent electrode. The second semiconductor layer has a band gap energy less than that of the semiconductor substrate, and the barrier layer includes a semiconductor material or an insulator having a band gap greater than that of the semiconductor substrate.

公开(公告)号：US09887303B2

公开(公告)日：2018-02-06

申请号：US14971019

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L31/00 ,  H01L31/032 ,  H01L29/16 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L27/144 ,  H01L29/12 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L31/032 ,  H01L27/1446 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66977 ,  H01L29/786 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/1884 ,  Y02E10/50

Abstract: Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.

公开(公告)号：US09806218B2

公开(公告)日：2017-10-31

申请号：US15085100

申请日：2016-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Seongjun Park ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jaeho Lee

IPC: H01L31/105 ,  H01L31/109 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/107 ,  H01L29/66 ,  H01L29/267 ,  H01L29/16

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US11626489B2

公开(公告)日：2023-04-11

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L31/0352 ,  H01L29/16 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L27/30

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20210043749A1

公开(公告)日：2021-02-11

申请号：US16779863

申请日：2020-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Lee ,  Kiyoung Lee ,  Yongsung Kim ,  Eunsun Kim

IPC: H01L29/51 ,  H01L27/11585 ,  H01L27/11502 ,  C01G23/00 ,  C01G35/00

Abstract: A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO3, wherein at least one of A and B in ABO3 is substituted and doped with another atom having a larger atom radius, and ABO3 becomes A1−xA′xB1−yB′yO3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

公开(公告)号：US10121854B2

公开(公告)日：2018-11-06

申请号：US15605057

申请日：2017-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/225 ,  H01L29/423 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

公开(公告)号：US09735233B2

公开(公告)日：2017-08-15

申请号：US14932395

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Jaeho Lee ,  Seongjun Park

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/225 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/0665 ,  H01L21/2253 ,  H01L29/0649 ,  H01L29/41733 ,  H01L29/4236 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/785 ,  H01L29/78648 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper channel material layer on the substrate, and a gate electrode that covers the upper channel material layer and the energy barrier forming layer. The gate electrode includes a side gate electrode portion that faces a side surface of the energy barrier forming layer. The side gate electrode may be configured to cause an electric field to be applied directly on the energy barrier forming layer via the side surface of the energy barrier forming layer, thereby enabling adjustment of the energy barrier between the energy barrier forming layer and the upper channel material layer. The electronic device may further include a lower channel material layer that is provided on the substrate and does not contact the upper channel material layer.

公开(公告)号：US09691853B2

公开(公告)日：2017-06-27

申请号：US14600888

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Taeho Kim ,  Kiyoung Lee ,  Seongjun Park

IPC: H01L29/10 ,  H01L29/16 ,  H01L27/12 ,  H01L27/144 ,  H01L29/267 ,  H01L29/778 ,  H01L29/06 ,  H01L27/15 ,  H01L33/00 ,  H01L29/786 ,  H01L33/06 ,  H01L33/34

CPC classification number: H01L29/1033 ,  H01L27/1222 ,  H01L27/1443 ,  H01L27/156 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/778 ,  H01L29/78681 ,  H01L29/78684 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/1136 ,  H01L33/0041 ,  H01L33/06 ,  H01L33/34 ,  Y02E10/547

Abstract: According to example embodiments, an electronic device includes channel layer including a graphene layer electrically contacting a quantum dot layer including a plurality of quantum dots, a first electrode and a second electrode electrically connected to the channel layer, respectively, and a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer. A gate insulating layer may be between the gate electrode and the channel layer.