公开(公告)号：US11996365B2

公开(公告)日：2024-05-28

申请号：US18114358

申请日：2023-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho Park ,  Seung Hwan Kim ,  Jun Young Oh ,  Kyong Hwan Koh ,  Sangsoo Kim ,  Dong-Ju Jang

IPC: H01L23/538 ,  H01L23/16 ,  H01L23/31 ,  H01L25/065

CPC classification number: H01L23/5384 ,  H01L23/16 ,  H01L23/31 ,  H01L23/5385 ,  H01L25/0652

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

公开(公告)号：US11508713B2

公开(公告)日：2022-11-22

申请号：US17168706

申请日：2021-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Kyonghwan Koh ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee

IPC: H01L21/56 ,  H01L25/00 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/78 ,  H01L25/065

Abstract: A method of manufacturing a semiconductor package includes forming a laser reactive polymer layer on a substrate; mounting a semiconductor device on the substrate; irradiating at least a portion of the laser reactive polymer layer below the semiconductor device with a laser having a wavelength capable of penetrating through the semiconductor device on the substrate to modify the laser reactive polymer layer to have a hydrophilic functional group; and forming a first encapsulation material layer between the semiconductor device and the substrate.

公开(公告)号：US20200350288A1

公开(公告)日：2020-11-05

申请号：US16680657

申请日：2019-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongho PARK ,  Kyungsuk Oh ,  Hyunki Kim ,  Yongkwan Lee ,  Sangsoo Kim ,  Seungkon Mok ,  Junyoung Oh ,  Changyoung Yoo

IPC: H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L23/16

Abstract: A semiconductor package including a circuit substrate including a plurality of interconnections; a first chip on the circuit substrate; a second chip stacked on the first chip; a plurality of first pads on the circuit substrate, the plurality of first pads overlapping the first chip; a plurality of bumps between the circuit substrate and the first chip; a plurality of second pads on an edge portion of a first side of the circuit substrate, the plurality of second pads electrically connected to the second chip through a conductive wire; an underfill that fills a space between the circuit substrate and the first chip; and a first dam on the circuit substrate, the first dam overlapping the first chip. The first dam includes a conductive material and overlaps at least one of the plurality of interconnections.

公开(公告)号：US20230343560A1

公开(公告)日：2023-10-26

申请号：US18217043

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Jaeho Kwak ,  Boeun Jang ,  Seokyeon Hwang ,  Yongseok Seo ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee ,  Jongho Lee ,  Daewook Kim ,  Wonpil Lee ,  Changkyu Choi

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32449 ,  C23C16/45504 ,  C23C16/45589 ,  H01J37/32633 ,  H01J37/32357 ,  C23C16/45591 ,  C23C16/45502 ,  C23C16/4583

Abstract: A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

公开(公告)号：US20230223347A1

公开(公告)日：2023-07-13

申请号：US18114358

申请日：2023-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JONGHO PARK ,  Seung Hwan Kim ,  Jung Young Oh ,  Kyong Hwan Koh ,  Sangsoo Kim ,  Dong-Ju Jang

IPC: H01L23/538 ,  H01L25/065 ,  H01L23/16 ,  H01L23/31

CPC classification number: H01L23/5384 ,  H01L23/5385 ,  H01L25/0652 ,  H01L23/16 ,  H01L23/31

Abstract: A semiconductor package including: a first package; a second package on the first package, the second package including a second package substrate, first and second semiconductor chips on the second package substrate, and a second molding part on the second package substrate and covering the first and second semiconductor chips; and a fill part between the first package and the second package, a first through hole that penetrates the second package substrate, the first through hole being between the first and second semiconductor chips, a second through hole that penetrates the second molding part, the second through hole being connected to the first through hole, and wherein the fill part has an extension disposed in the first through hole and the second through hole.

公开(公告)号：US11569209B2

公开(公告)日：2023-01-31

申请号：US17236138

申请日：2021-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangsoo Kim ,  Sehun Ahn ,  Pilsung Choi ,  Sung-Kyu Park

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L25/00 ,  H01L21/56

Abstract: A semiconductor package includes a substrate having a first surface and a second surface opposite to the first surface. A semiconductor chip is on the first surface of the substrate. A passive element is on the second surface of the substrate. The substrate includes a first passive element pad and a second passive element pad that are exposed by the second surface. A dam extends downwardly from the second surface. The dam includes a first dam and a second dam. The passive element is disposed between the first dam and the second dam. The passive element includes a first electrode portion electrically connected to the first passive element pad. A second electrode portion is electrically connected to the second passive element pad.

公开(公告)号：US20210242190A1

公开(公告)日：2021-08-05

申请号：US17168706

申请日：2021-02-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung Oh ,  Kyonghwan Koh ,  Sangsoo Kim ,  Seunghwan Kim ,  Jongho Park ,  Yongkwan Lee

IPC: H01L25/00 ,  H01L25/065 ,  H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor package includes forming a laser reactive polymer layer on a substrate; mounting a semiconductor device on the substrate; irradiating at least a portion of the laser reactive polymer layer below the semiconductor device with a laser having a wavelength capable of penetrating through the semiconductor device on the substrate to modify the laser reactive polymer layer to have a hydrophilic functional group; and forming a first encapsulation material layer between the semiconductor device and the substrate.

公开(公告)号：US20200027818A1

公开(公告)日：2020-01-23

申请号：US16285480

申请日：2019-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunki Kim ,  Sangsoo Kim ,  Seung Hwan Kim ,  Kyung Suk Oh ,  Yongkwan Lee ,  Jongho Lee

IPC: H01L23/433 ,  H01L25/065 ,  H01L23/367 ,  H01L23/00

Abstract: Disclosed is a semiconductor package comprising a package substrate, a first semiconductor chip on the package substrate and including a first region and a second region, a second semiconductor chip on the first region, a heat radiation spacer on the second region, a third semiconductor chip supported by the second semiconductor chip and the heat radiation spacer, and a molding layer covering the first to third semiconductor chips and the heat radiation spacer.

公开(公告)号：US10361177B2

公开(公告)日：2019-07-23

申请号：US15960698

申请日：2018-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun-Young Kim ,  Pyoungwan Kim ,  Hyunki Kim ,  Junwoo Park ,  Sangsoo Kim ,  Seung Hwan Kim ,  Sung-Kyu Park ,  Insup Shin

IPC: H01L21/56 ,  H01L25/00 ,  H01L25/10 ,  H01L25/11

Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package comprises a lower semiconductor chip on a lower substrate, a lower molding layer covering the lower semiconductor chip on the lower substrate and including a molding cavity that extends toward the lower semiconductor chip from a top surface of the lower molding layer, an interposer substrate on the top surface of the lower molding layer and including a substrate opening that penetrates the interposer substrate and overlaps the molding cavity, and an upper package on the interposer substrate. The molding cavity has a floor surface spaced apart from the upper package across a substantially hollow space.